CN113611783A - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
CN113611783A
CN113611783A CN202110458091.3A CN202110458091A CN113611783A CN 113611783 A CN113611783 A CN 113611783A CN 202110458091 A CN202110458091 A CN 202110458091A CN 113611783 A CN113611783 A CN 113611783A
Authority
CN
China
Prior art keywords
layer
substrate
light
emitting element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110458091.3A
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English (en)
Chinese (zh)
Inventor
王心盈
陈之皓
廖健智
陈昭兴
骆武聪
柯淙凯
欧震
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of CN113611783A publication Critical patent/CN113611783A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN202110458091.3A 2020-05-04 2021-04-27 发光元件 Pending CN113611783A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063019948P 2020-05-04 2020-05-04
US63/019,948 2020-05-04

Publications (1)

Publication Number Publication Date
CN113611783A true CN113611783A (zh) 2021-11-05

Family

ID=78267682

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202110458091.3A Pending CN113611783A (zh) 2020-05-04 2021-04-27 发光元件
CN202110458285.3A Pending CN113611784A (zh) 2020-05-04 2021-04-27 发光元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202110458285.3A Pending CN113611784A (zh) 2020-05-04 2021-04-27 发光元件

Country Status (6)

Country Link
US (5) US11705545B2 (https=)
JP (1) JP2021177548A (https=)
KR (2) KR20210135424A (https=)
CN (2) CN113611783A (https=)
DE (1) DE102021111355A1 (https=)
TW (3) TWI891775B (https=)

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TWI891775B (zh) * 2020-05-04 2025-08-01 晶元光電股份有限公司 發光元件
US12243966B2 (en) * 2020-06-24 2025-03-04 Epistar Corporation Light-emitting device
US20220320369A1 (en) * 2021-03-31 2022-10-06 Nichia Corporation Method of manufacturing light-emitting element and light-emitting element
CN115458647B (zh) * 2022-10-31 2025-08-19 天津三安光电有限公司 一种垂直led芯片结构及其制造方法及发光装置
CN115663079B (zh) * 2022-11-01 2026-03-31 厦门三安光电有限公司 一种发光二极管及其制备方法
CN116995175B (zh) * 2023-09-21 2024-02-06 南昌凯捷半导体科技有限公司 一种Ag微棱镜反光结构同侧电极LED及其制作方法
CN118538845A (zh) * 2024-06-05 2024-08-23 厦门三安光电有限公司 一种发光二极管、高压发光二极管及发光装置
KR20260026632A (ko) * 2024-08-19 2026-02-27 삼성디스플레이 주식회사 발광소자, 표시 장치와 그의 제조 방법

Citations (4)

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US20140339587A1 (en) * 2013-05-17 2014-11-20 Nichia Corporation Semiconductor light emitting element and method of manufacturing the same
US20160013361A1 (en) * 2014-07-11 2016-01-14 Epistar Corporation Light-emitting device and manufacturing method thereof
US20160111600A1 (en) * 2013-07-29 2016-04-21 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and led module having the same
CN107039569A (zh) * 2015-10-16 2017-08-11 首尔伟傲世有限公司 发光二极管芯片

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JP4550457B2 (ja) * 2004-03-26 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4609983B2 (ja) * 2004-04-30 2011-01-12 ルネサスエレクトロニクス株式会社 電極パッドを備える素子
CN102067345A (zh) * 2008-08-19 2011-05-18 晶能光电（江西）有限公司 用于制备具有双面钝化的半导体发光器件的方法
JP2011129765A (ja) * 2009-12-18 2011-06-30 Showa Denko Kk 半導体発光素子の製造方法
JP2012151261A (ja) * 2011-01-19 2012-08-09 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2013021175A (ja) * 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
US8558247B2 (en) * 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8828759B2 (en) * 2011-12-06 2014-09-09 Cooledge Lighting Inc. Formation of uniform phosphor regions for broad-area lighting systems
JP5865695B2 (ja) * 2011-12-19 2016-02-17 昭和電工株式会社 発光ダイオード及びその製造方法
CN104377287B (zh) * 2013-08-14 2017-04-26 展晶科技(深圳)有限公司 发光二极管及其制造方法
DE102015112538B4 (de) * 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2017052344A1 (ko) * 2015-09-25 2017-03-30 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 발광장치
US9851056B2 (en) * 2015-10-16 2017-12-26 Seoul Viosys Co., Ltd. Compact light emitting diode chip and light emitting device having a slim structure with secured durability
JP6683003B2 (ja) * 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
TWI720053B (zh) * 2016-11-09 2021-03-01 晶元光電股份有限公司 發光元件及其製造方法
KR102601417B1 (ko) * 2017-09-28 2023-11-14 서울바이오시스 주식회사 발광 다이오드 칩
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
KR102697974B1 (ko) * 2018-11-21 2024-08-22 서울바이오시스 주식회사 발광 소자 및 이를 포함하는 발광 모듈
EP3920245A4 (en) * 2019-01-31 2022-11-02 Seoul Viosys Co., Ltd LIGHT EMITTING DIODE
US11380788B2 (en) * 2020-03-23 2022-07-05 Semiconductor Components Industries, Llc Structures and methods for source-down vertical semiconductor device
TWI891775B (zh) * 2020-05-04 2025-08-01 晶元光電股份有限公司 發光元件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140339587A1 (en) * 2013-05-17 2014-11-20 Nichia Corporation Semiconductor light emitting element and method of manufacturing the same
US20160111600A1 (en) * 2013-07-29 2016-04-21 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and led module having the same
US20160013361A1 (en) * 2014-07-11 2016-01-14 Epistar Corporation Light-emitting device and manufacturing method thereof
CN107039569A (zh) * 2015-10-16 2017-08-11 首尔伟傲世有限公司 发光二极管芯片

Also Published As

Publication number Publication date
TWI891775B (zh) 2025-08-01
TW202143507A (zh) 2021-11-16
TW202143511A (zh) 2021-11-16
DE102021111355A1 (de) 2021-11-04
JP2021177548A (ja) 2021-11-11
US12155019B2 (en) 2024-11-26
KR20210135426A (ko) 2021-11-15
US20230395765A1 (en) 2023-12-07
CN113611784A (zh) 2021-11-05
US20210343913A1 (en) 2021-11-04
US20210343906A1 (en) 2021-11-04
TW202541666A (zh) 2025-10-16
TWI891776B (zh) 2025-08-01
US11990575B2 (en) 2024-05-21
US20240274766A1 (en) 2024-08-15
US11705545B2 (en) 2023-07-18
US11757077B2 (en) 2023-09-12
KR20210135424A (ko) 2021-11-15
US20230317898A1 (en) 2023-10-05

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Country or region after: Taiwan, China

Address after: Hsinchu City, Taiwan, China

Applicant after: Fucai Optoelectronics Co., Ltd.

Address before: Hsinchu City, Taiwan, China

Applicant before: EPISTAR Corp.

Country or region before: Taiwan, China