DE102021111355A1 - Leuchtvorrichtung - Google Patents

Leuchtvorrichtung Download PDF

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Publication number
DE102021111355A1
DE102021111355A1 DE102021111355.5A DE102021111355A DE102021111355A1 DE 102021111355 A1 DE102021111355 A1 DE 102021111355A1 DE 102021111355 A DE102021111355 A DE 102021111355A DE 102021111355 A1 DE102021111355 A1 DE 102021111355A1
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DE
Germany
Prior art keywords
layer
substrate
top surface
lighting device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102021111355.5A
Other languages
German (de)
English (en)
Inventor
Hsin-Ying Wang
Chih-hao Chen
Chien-Chih Liao
Chao-Hsing Chen
Wu-Tsung Lo
Tsun-Kai Ko
Chen Ou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ENNOSTAR CORPORATION, TW
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of DE102021111355A1 publication Critical patent/DE102021111355A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE102021111355.5A 2020-05-04 2021-05-03 Leuchtvorrichtung Pending DE102021111355A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063019948P 2020-05-04 2020-05-04
US63/019,948 2020-05-04

Publications (1)

Publication Number Publication Date
DE102021111355A1 true DE102021111355A1 (de) 2021-11-04

Family

ID=78267682

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102021111355.5A Pending DE102021111355A1 (de) 2020-05-04 2021-05-03 Leuchtvorrichtung

Country Status (6)

Country Link
US (5) US11705545B2 (https=)
JP (1) JP2021177548A (https=)
KR (2) KR20210135424A (https=)
CN (2) CN113611783A (https=)
DE (1) DE102021111355A1 (https=)
TW (3) TWI891775B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI891775B (zh) * 2020-05-04 2025-08-01 晶元光電股份有限公司 發光元件
US12243966B2 (en) * 2020-06-24 2025-03-04 Epistar Corporation Light-emitting device
US20220320369A1 (en) * 2021-03-31 2022-10-06 Nichia Corporation Method of manufacturing light-emitting element and light-emitting element
CN115458647B (zh) * 2022-10-31 2025-08-19 天津三安光电有限公司 一种垂直led芯片结构及其制造方法及发光装置
CN115663079B (zh) * 2022-11-01 2026-03-31 厦门三安光电有限公司 一种发光二极管及其制备方法
CN116995175B (zh) * 2023-09-21 2024-02-06 南昌凯捷半导体科技有限公司 一种Ag微棱镜反光结构同侧电极LED及其制作方法
CN118538845A (zh) * 2024-06-05 2024-08-23 厦门三安光电有限公司 一种发光二极管、高压发光二极管及发光装置
KR20260026632A (ko) * 2024-08-19 2026-02-27 삼성디스플레이 주식회사 발광소자, 표시 장치와 그의 제조 방법

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JP4550457B2 (ja) * 2004-03-26 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4609983B2 (ja) * 2004-04-30 2011-01-12 ルネサスエレクトロニクス株式会社 電極パッドを備える素子
CN102067345A (zh) * 2008-08-19 2011-05-18 晶能光电（江西）有限公司 用于制备具有双面钝化的半导体发光器件的方法
JP2011129765A (ja) * 2009-12-18 2011-06-30 Showa Denko Kk 半導体発光素子の製造方法
JP2012151261A (ja) * 2011-01-19 2012-08-09 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2013021175A (ja) * 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
US8558247B2 (en) * 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8828759B2 (en) * 2011-12-06 2014-09-09 Cooledge Lighting Inc. Formation of uniform phosphor regions for broad-area lighting systems
JP5865695B2 (ja) * 2011-12-19 2016-02-17 昭和電工株式会社 発光ダイオード及びその製造方法
JP6221926B2 (ja) * 2013-05-17 2017-11-01 日亜化学工業株式会社 半導体発光素子およびその製造方法
US9847457B2 (en) * 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
CN104377287B (zh) * 2013-08-14 2017-04-26 展晶科技(深圳)有限公司 发光二极管及其制造方法
TWI614914B (zh) * 2014-07-11 2018-02-11 晶元光電股份有限公司 發光元件及其製造方法
DE102015112538B4 (de) * 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2017052344A1 (ko) * 2015-09-25 2017-03-30 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 발광장치
US9851056B2 (en) * 2015-10-16 2017-12-26 Seoul Viosys Co., Ltd. Compact light emitting diode chip and light emitting device having a slim structure with secured durability
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JP6683003B2 (ja) * 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
TWI720053B (zh) * 2016-11-09 2021-03-01 晶元光電股份有限公司 發光元件及其製造方法
KR102601417B1 (ko) * 2017-09-28 2023-11-14 서울바이오시스 주식회사 발광 다이오드 칩
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
KR102697974B1 (ko) * 2018-11-21 2024-08-22 서울바이오시스 주식회사 발광 소자 및 이를 포함하는 발광 모듈
EP3920245A4 (en) * 2019-01-31 2022-11-02 Seoul Viosys Co., Ltd LIGHT EMITTING DIODE
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TWI891775B (zh) * 2020-05-04 2025-08-01 晶元光電股份有限公司 發光元件

Also Published As

Publication number Publication date
TWI891775B (zh) 2025-08-01
TW202143507A (zh) 2021-11-16
TW202143511A (zh) 2021-11-16
JP2021177548A (ja) 2021-11-11
CN113611783A (zh) 2021-11-05
US12155019B2 (en) 2024-11-26
KR20210135426A (ko) 2021-11-15
US20230395765A1 (en) 2023-12-07
CN113611784A (zh) 2021-11-05
US20210343913A1 (en) 2021-11-04
US20210343906A1 (en) 2021-11-04
TW202541666A (zh) 2025-10-16
TWI891776B (zh) 2025-08-01
US11990575B2 (en) 2024-05-21
US20240274766A1 (en) 2024-08-15
US11705545B2 (en) 2023-07-18
US11757077B2 (en) 2023-09-12
KR20210135424A (ko) 2021-11-15
US20230317898A1 (en) 2023-10-05

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Legal Events

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R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033460000

Ipc: H10H0020841000

R081 Change of applicant/patentee

Owner name: ENNOSTAR CORPORATION, TW

Free format text: FORMER OWNER: EPISTAR CORPORATION, HSINCHU, TW