JP2021177548A - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP2021177548A
JP2021177548A JP2021077049A JP2021077049A JP2021177548A JP 2021177548 A JP2021177548 A JP 2021177548A JP 2021077049 A JP2021077049 A JP 2021077049A JP 2021077049 A JP2021077049 A JP 2021077049A JP 2021177548 A JP2021177548 A JP 2021177548A
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JP
Japan
Prior art keywords
layer
substrate
light emitting
emitting element
semiconductor
Prior art date
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Pending
Application number
JP2021077049A
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English (en)
Japanese (ja)
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JP2021177548A5 (https=
Inventor
ワン シン−イン
Hsin Ying Wang
チェン チィ−ハオ
Chih-Hao Chen
リャオ チエン−チィ
Chien Chih Liao
チェン チャオ−シン
Chao-Hsing Chen
ロ ウ−ツン
Wu Tsung Lo
コ ツン−カイ
Tsun-Kai Ko
オウ チェン
Chen Ou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
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Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of JP2021177548A publication Critical patent/JP2021177548A/ja
Publication of JP2021177548A5 publication Critical patent/JP2021177548A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2021077049A 2020-05-04 2021-04-30 発光素子 Pending JP2021177548A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063019948P 2020-05-04 2020-05-04
US63/019,948 2020-05-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2026013704A Division JP2026074083A (ja) 2020-05-04 2026-01-30 発光素子

Publications (2)

Publication Number Publication Date
JP2021177548A true JP2021177548A (ja) 2021-11-11
JP2021177548A5 JP2021177548A5 (https=) 2024-05-08

Family

ID=78267682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021077049A Pending JP2021177548A (ja) 2020-05-04 2021-04-30 発光素子

Country Status (6)

Country Link
US (5) US11705545B2 (https=)
JP (1) JP2021177548A (https=)
KR (2) KR20210135424A (https=)
CN (2) CN113611783A (https=)
DE (1) DE102021111355A1 (https=)
TW (3) TWI891775B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI891775B (zh) * 2020-05-04 2025-08-01 晶元光電股份有限公司 發光元件
US12243966B2 (en) * 2020-06-24 2025-03-04 Epistar Corporation Light-emitting device
US20220320369A1 (en) * 2021-03-31 2022-10-06 Nichia Corporation Method of manufacturing light-emitting element and light-emitting element
CN115458647B (zh) * 2022-10-31 2025-08-19 天津三安光电有限公司 一种垂直led芯片结构及其制造方法及发光装置
CN115663079B (zh) * 2022-11-01 2026-03-31 厦门三安光电有限公司 一种发光二极管及其制备方法
CN116995175B (zh) * 2023-09-21 2024-02-06 南昌凯捷半导体科技有限公司 一种Ag微棱镜反光结构同侧电极LED及其制作方法
CN118538845A (zh) * 2024-06-05 2024-08-23 厦门三安光电有限公司 一种发光二极管、高压发光二极管及发光装置
KR20260026632A (ko) * 2024-08-19 2026-02-27 삼성디스플레이 주식회사 발광소자, 표시 장치와 그의 제조 방법

Citations (6)

* Cited by examiner, † Cited by third party
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JP2011129765A (ja) * 2009-12-18 2011-06-30 Showa Denko Kk 半導体発光素子の製造方法
JP2012500479A (ja) * 2008-08-19 2012-01-05 ラティス パワー （チアンシ） コーポレイション 両面不動態化を伴う半導体発光デバイスを製造するための方法
JP2012151261A (ja) * 2011-01-19 2012-08-09 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2013021175A (ja) * 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
US20170108173A1 (en) * 2015-10-16 2017-04-20 Seoul Viosys Co., Ltd. Compact light emitting diode chip and light emitting device including the same
US20180198045A1 (en) * 2015-07-30 2018-07-12 Osram Opto Semiconductors Gmbh Optoelectronic component and a method of producing an optoelectronic component

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US5994205A (en) * 1997-02-03 1999-11-30 Kabushiki Kaisha Toshiba Method of separating semiconductor devices
JP4550457B2 (ja) * 2004-03-26 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4609983B2 (ja) * 2004-04-30 2011-01-12 ルネサスエレクトロニクス株式会社 電極パッドを備える素子
US8558247B2 (en) * 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8828759B2 (en) * 2011-12-06 2014-09-09 Cooledge Lighting Inc. Formation of uniform phosphor regions for broad-area lighting systems
JP5865695B2 (ja) * 2011-12-19 2016-02-17 昭和電工株式会社 発光ダイオード及びその製造方法
JP6221926B2 (ja) * 2013-05-17 2017-11-01 日亜化学工業株式会社 半導体発光素子およびその製造方法
US9847457B2 (en) * 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
CN104377287B (zh) * 2013-08-14 2017-04-26 展晶科技(深圳)有限公司 发光二极管及其制造方法
TWI614914B (zh) * 2014-07-11 2018-02-11 晶元光電股份有限公司 發光元件及其製造方法
WO2017052344A1 (ko) * 2015-09-25 2017-03-30 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 발광장치
CN109920899B (zh) * 2015-10-16 2021-08-06 首尔伟傲世有限公司 发光二极管芯片以及发光装置
JP6683003B2 (ja) * 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
TWI720053B (zh) * 2016-11-09 2021-03-01 晶元光電股份有限公司 發光元件及其製造方法
KR102601417B1 (ko) * 2017-09-28 2023-11-14 서울바이오시스 주식회사 발광 다이오드 칩
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
KR102697974B1 (ko) * 2018-11-21 2024-08-22 서울바이오시스 주식회사 발광 소자 및 이를 포함하는 발광 모듈
EP3920245A4 (en) * 2019-01-31 2022-11-02 Seoul Viosys Co., Ltd LIGHT EMITTING DIODE
US11380788B2 (en) * 2020-03-23 2022-07-05 Semiconductor Components Industries, Llc Structures and methods for source-down vertical semiconductor device
TWI891775B (zh) * 2020-05-04 2025-08-01 晶元光電股份有限公司 發光元件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012500479A (ja) * 2008-08-19 2012-01-05 ラティス パワー （チアンシ） コーポレイション 両面不動態化を伴う半導体発光デバイスを製造するための方法
JP2011129765A (ja) * 2009-12-18 2011-06-30 Showa Denko Kk 半導体発光素子の製造方法
JP2012151261A (ja) * 2011-01-19 2012-08-09 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2013021175A (ja) * 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
US20180198045A1 (en) * 2015-07-30 2018-07-12 Osram Opto Semiconductors Gmbh Optoelectronic component and a method of producing an optoelectronic component
US20170108173A1 (en) * 2015-10-16 2017-04-20 Seoul Viosys Co., Ltd. Compact light emitting diode chip and light emitting device including the same

Also Published As

Publication number Publication date
TWI891775B (zh) 2025-08-01
TW202143507A (zh) 2021-11-16
TW202143511A (zh) 2021-11-16
DE102021111355A1 (de) 2021-11-04
CN113611783A (zh) 2021-11-05
US12155019B2 (en) 2024-11-26
KR20210135426A (ko) 2021-11-15
US20230395765A1 (en) 2023-12-07
CN113611784A (zh) 2021-11-05
US20210343913A1 (en) 2021-11-04
US20210343906A1 (en) 2021-11-04
TW202541666A (zh) 2025-10-16
TWI891776B (zh) 2025-08-01
US11990575B2 (en) 2024-05-21
US20240274766A1 (en) 2024-08-15
US11705545B2 (en) 2023-07-18
US11757077B2 (en) 2023-09-12
KR20210135424A (ko) 2021-11-15
US20230317898A1 (en) 2023-10-05

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