JP5682427B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP5682427B2 JP5682427B2 JP2011087312A JP2011087312A JP5682427B2 JP 5682427 B2 JP5682427 B2 JP 5682427B2 JP 2011087312 A JP2011087312 A JP 2011087312A JP 2011087312 A JP2011087312 A JP 2011087312A JP 5682427 B2 JP5682427 B2 JP 5682427B2
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- 239000010410 layer Substances 0.000 claims description 221
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 31
- 239000012212 insulator Substances 0.000 claims description 28
- 239000011241 protective layer Substances 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 7
- 238000010292 electrical insulation Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- 229910016570 AlCu Inorganic materials 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000000149 argon plasma sintering Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- -1 aluminum silicon copper Chemical compound 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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Description
発光装置の構成について、図面を参照しながら説明する。図1は、実施形態に係る発光装置1の構成を示す断面図である。
発光素子10は、パッケージ20にフェイスアップ実装される。発光素子10は、パッケージ20を介して供給される電流によって発光する。発光素子10の構成については後述する。
次に、発光素子の構成について、図面を参照しながら説明する。図2は、実施形態に係る発光素子10の構成を示す平面図である。図3は、図2のIII-III線における断面図である。
電極体の構成について、図面を参照しながら説明する。具体的には、p側電極体160を構成するp側パッド電極161及びp側補助電極162の構成について説明する。
図4は、図3の部分拡大図であり、p側パッド電極161の内部構造を示している。
p側パッド電極161は、電極層200と、絶縁体層210と、反射層220と、を備える。
図5は、図2のV−V線における断面図であり、p側補助電極163の構成を示している。
発光素子の製造方法について、図面を参照しながら説明する。図6(a)〜図6(d)は、実施形態に係る発光素子10の製造方法を説明するための断面図である。
続いて、図6(c)に示すように、保護層180上にフォトリソグラフィー法によってパターニングされたレジスト膜を形成した後、ウェットエッチング法によって絶縁体層210及び反射層220の一部を選択的に除去することによって、電極層200の一部を露出させる。その後、レジスト膜を剥離しておく。
(1)本実施形態に係る発光素子10において、p側電極体160(「電極体」の一例であり、p側パッド電極161及びp側補助電極163を含む。)は、電極層200と、絶縁体層210と、反射層220と、を備える。絶縁体層210は、電極層200上に形成され、電気的絶縁性を有するSiO2によって構成されている。反射層220は、絶縁体層210上に形成され、発光層130から放出される出射光を反射するAlCuによって構成される。
従って、p側電極体160と保護層180との密着性を向上させることができる。
ここで、Alの硬度は、RhやRhを含む合金の硬度に比べて小さい。そのため、反射層220がRhやRhを含む合金によって構成される場合に比べて、p側凹部160aを容易に形成することができる。さらに、Alは、Agに比べて、他の金属材料との間にイオンマイグレーションを発生しにくい。そのため、反射層220がAgやAgを含む合金によって構成される場合に比べて、イオンマイグレーションの発生を抑制することができる。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
(C)上記実施形態では、p側電極体160及びn側電極体170のそれぞれが、絶縁体層210及び反射層220を備えることとしたが、いずれか一方のみが絶縁体層210及び反射層220を備えていればよい。
以下のように、実施例1に係る発光素子を作製した。
まず、800μm×800μmサイズのサファイア基板上に、MOCVD法によってn型窒化物半導体層、窒化物半導体層(発光層)及びp型窒化物半導体層を順次積層した。
次に、p型窒化物半導体層上に、スパッタ法によってITO層を形成した。
次に、積層体の全体をSiO2膜によって覆った。
次に、フォトリソグラフィー法によってSiO2膜をパターニングした後、ウェットエッチング法によってSiO2層及びAlCu層の一部を選択的に除去することによって、Ni層の一部を露出させた。
次に、露出されたAu層上にAu製ボンディングワイヤを接続した。
反射層の構成材料としてAl材料を用いて、実施例2に係る発光素子を作製した。それ以外の製法は、上述の実施例1に係る発光素子と同様とした。
SiO2層及び反射層を備えない電極体を形成することによって、比較例に係る発光素子を作製した。それ以外の製法は、上述の実施例1に係る発光素子と同様とした。
実施例1、実施例2及び比較例それぞれに係る発光素子について、電極体表面における光反射率を測定した。具体的には、入射角5°、波長約300nm〜約800nmの光を照射して、各発光素子15個についての光反射率の平均値を算出した。
実施例1及び比較例に係る発光素子を用いて図1に示す構成の発光装置を作製し、青色光を放出させた場合の光出力を測定した。
実施例1及び比較例に係る発光素子を用いて図1に示す構成の発光装置を作製し、白色光を放出させた場合の光束及び効率を測定した。
10…発光素子
20…パッケージ
21…第1リード
21a…凹部
22…第2リード
23…封止部材
23a…光散乱材
24…第1ボンディングワイヤ
25…第2ボンディングワイヤ
26…モールド部
110…成長基板
120…n型半導体層
130…発光層
140…p型半導体層
150…透光性導電膜
160…一対のp側電極体
160a…p側凹部
161…p側パッド電極
162…p側補助電極
163…p側補助電極
170…n側電極体
170a…n側凹部
171…n側パッド電極
172…n側補助電極
180…保護層
180a…p側開口
180b…n側開口
200…電極層
201…Ti層
202…Rh層
203…第1W層
204…Au層
205…第2W層
206…Ni層
210…絶縁体層
220…反射層
Claims (6)
- 第1導電型半導体層と、
前記第1導電型半導体層上に形成される発光層と、
前記発光層上に形成される第2導電型半導体層と、
前記第2導電型半導体層上に配置される電極体と、
を備え、
前記電極体は、
前記第2導電型半導体層上に形成され、金属材料によって構成される電極層と、
前記電極層上に形成され、電気的絶縁性を有する材料によって構成される絶縁体層と、
前記絶縁体層上に形成され、前記発光層から放出される光を反射する金属材料によって構成される反射層と、
を有し、
前記電極層は、前記絶縁体層側から順次積層されたNi層、W層及びAu層を含む、
発光素子。 - 前記電極体を覆い、電気的絶縁性を有する材料によって構成される保護層をさらに備える請求項1に記載の発光素子。
- 前記絶縁体層と前記保護層とは、同一の材料によって構成される、
請求項2に記載の発光素子。 - 前記絶縁体層と前記保護層とは、SiO2によって構成される、
請求項3に記載の発光素子。 - 前記反射層は、Al又はAlを含む合金によって構成される、
請求項1乃至4のいずれかに記載の発光素子。 - 前記反射層は、AlとCuとの合金によって構成される、
請求項5に記載の発光素子。
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