JP2021150319A - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
Description
実施形態に係る基板処理装置について説明する。以下では、基板処理装置をプラズマ処理装置10とし、基板処理としてプラズマエッチングなどのプラズマ処理を実施する場合を主な例に説明する。図1は、実施形態に係るプラズマ処理装置10の概略構成の一例を示す垂直断面図である。本実施形態に係るプラズマ処理装置10は、誘導結合プラズマを生成して、例えば、FPD用ガラス基板のような矩形の基板に対しエッチング処理やアッシング処理等のプラズマ処理を行うプラズマ処理装置として構成される。
4 処理室
4a 側壁
23 載置台
23a 載置面
23aa 載置領域
23ab 周辺領域
29a 搬入出口
60 整流壁
60a 上面
60b、60c 側面
60d 下面
61 支持部材
62 間隙
70 短辺壁部
71 長辺辺壁部
73 角壁部
90 アーム
G 基板
Claims (7)
- 処理容器と、
前記処理容器内に配置され、基板を載置する載置領域が画定された載置台と、
前記載置台の前記載置領域を囲む周辺領域上に、前記載置領域側から前記載置台の外周側に貫通する間隙を設けて前記載置領域を囲むように配置された整流壁と、
を有する基板処理装置。 - 前記整流壁は、前記周辺領域と前記整流壁との間に設けられた支持部材により支持されることで前記間隙が設けられた
請求項1に記載の基板処理装置。 - 前記整流壁は、前記処理容器の側壁と前記整流壁との間に設けられた支持部材により支持されることで前記間隙が設けられた
請求項1に記載の基板処理装置。 - 前記載置台は、前記載置領域と前記周辺領域が連続した平面を構成し、
前記整流壁は、下面が平坦とされた
請求項1〜3の何れか1つに記載の基板処理装置。 - 前記整流壁は、上面の前記周辺領域からの高さが20mm以上であり、前記間隙の間隔が1mm以上10mm以下である
請求項1〜4の何れか1つに記載の基板処理装置。 - 前記処理容器は、前記基板を搬入出する搬入出口が少なくとも1つの側壁に設けられ、
前記整流壁は、上面が前記搬入出口よりも低い位置とされた
請求項1〜5の何れか1つに記載の基板処理装置。 - 基板を載置する載置領域が画定された載置台が内部に配置された処理容器を有する基板処理装置により前記基板を処理する基板処理方法であって、
前記載置台の前記載置領域を囲む周辺領域上に、前記載置領域側から前記載置台の外周側に貫通する間隙を設けて前記載置領域を囲むように整流壁を配置し、
前記基板を処理する処理ガスを前記処理容器内に導入する
基板処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020045381A JP7437985B2 (ja) | 2020-03-16 | 2020-03-16 | 基板処理装置および基板処理方法 |
TW110107442A TW202143302A (zh) | 2020-03-16 | 2021-03-03 | 基板處理裝置及基板處理方法 |
KR1020210028941A KR102519769B1 (ko) | 2020-03-16 | 2021-03-04 | 기판 처리 장치 및 기판 처리 방법 |
CN202110250009.8A CN113410161A (zh) | 2020-03-16 | 2021-03-08 | 基片处理装置和基片处理方法 |
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JP2020045381A JP7437985B2 (ja) | 2020-03-16 | 2020-03-16 | 基板処理装置および基板処理方法 |
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JP2021150319A true JP2021150319A (ja) | 2021-09-27 |
JP7437985B2 JP7437985B2 (ja) | 2024-02-26 |
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JP (1) | JP7437985B2 (ja) |
KR (1) | KR102519769B1 (ja) |
CN (1) | CN113410161A (ja) |
TW (1) | TW202143302A (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6316625A (ja) * | 1986-07-09 | 1988-01-23 | Matsushita Electric Ind Co Ltd | ドライエツチング用電極 |
JPH0774155A (ja) * | 1993-08-31 | 1995-03-17 | Nec Corp | ドライエッチング方法およびドライエッチング装置 |
JP2003243364A (ja) * | 2002-02-15 | 2003-08-29 | Seiko Epson Corp | 整流ウォール及びドライエッチング装置並びに該装置を用いた電気光学装置の製造方法 |
JP2005033062A (ja) * | 2003-07-08 | 2005-02-03 | Tokyo Electron Ltd | プラズマ処理装置、フォーカスリング及びプラズマ処理方法 |
JP2012222235A (ja) * | 2011-04-12 | 2012-11-12 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2013149634A (ja) * | 2010-05-11 | 2013-08-01 | Sharp Corp | ドライエッチング装置 |
JP2018186221A (ja) * | 2017-04-27 | 2018-11-22 | 東京エレクトロン株式会社 | 基板処理装置 |
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2020
- 2020-03-16 JP JP2020045381A patent/JP7437985B2/ja active Active
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2021
- 2021-03-03 TW TW110107442A patent/TW202143302A/zh unknown
- 2021-03-04 KR KR1020210028941A patent/KR102519769B1/ko active IP Right Grant
- 2021-03-08 CN CN202110250009.8A patent/CN113410161A/zh active Pending
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JPS6316625A (ja) * | 1986-07-09 | 1988-01-23 | Matsushita Electric Ind Co Ltd | ドライエツチング用電極 |
JPH0774155A (ja) * | 1993-08-31 | 1995-03-17 | Nec Corp | ドライエッチング方法およびドライエッチング装置 |
JP2003243364A (ja) * | 2002-02-15 | 2003-08-29 | Seiko Epson Corp | 整流ウォール及びドライエッチング装置並びに該装置を用いた電気光学装置の製造方法 |
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KR102519769B1 (ko) | 2023-04-10 |
KR20210116259A (ko) | 2021-09-27 |
CN113410161A (zh) | 2021-09-17 |
TW202143302A (zh) | 2021-11-16 |
JP7437985B2 (ja) | 2024-02-26 |
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