JP2021114613A - Light emitting device - Google Patents

Abstract

To provide a light emitting device in which, even when a lens array is mounted while being slightly rotated from a predetermined direction, a significant deviation hardly occurs in a positional relationship between a light source and a lens section and, consequently, an intensity distribution of light emitted from the lens array hardly changes.SOLUTION: A light emitting device includes a substrate, a lens array having a plurality of lens sections in a matrix, and a plurality of semiconductor laser elements disposed on the substrate. The semiconductor laser elements emit respective laser beams. Each laser beam has a beam shape with a greater width in a column direction than in a row direction on a light incident surface of each of the plurality of lens sections. The plurality of lens sections have an inter-vertex distance in the row direction which is smaller than both a maximum outer diameter of each of the lens sections, and an inter-vertex distance in the column direction. A curvature of the lens sections in the row direction is the same as that of the lens sections in the column direction.SELECTED DRAWING: Figure 1A

Description

The present disclosure relates to a light emitting device.

A light source device that collimates light emitted from a plurality of light sources by a collimating lens array is known (see Patent Document 1).

Japanese Unexamined Patent Publication No. 2014-102367

However, in the conventional light source device, each lens element constituting the collimating lens array has a plurality of curvatures depending on the cross-sectional shape of the laser beam incident on each lens element. Therefore, even if the collimating lens array is mounted by slightly rotating from a predetermined direction, a large deviation occurs in the positional relationship between the light source and the lens element, and the intensity distribution of the light emitted from the collimating lens array changes. There is a risk.

The above problem can be solved by, for example, the following means. A light emitting device including a substrate, a lens array having a plurality of lens portions in a matrix, and a plurality of semiconductor laser elements arranged on the substrate, and the plurality of semiconductor laser elements emit laser light, respectively. Each laser beam is emitted and has a beam shape in which the width becomes wider in the column direction than in the row direction at each light incident surface of the plurality of lens portions, and the plurality of lens portions have the maximum outer diameter of each lens portion. A light emitting device having a distance between vertices in the row direction smaller than any of the distance between vertices in the column direction, and having the same curvature in the row direction and the column direction.

According to the above-mentioned light emitting device, even when the lens array is mounted by slightly rotating from a predetermined direction, the positional relationship between the light source and the lens portion is unlikely to be significantly deviated, and the light emitted from the lens array is not easily displaced. It is possible to provide a light emitting device whose intensity distribution does not change easily.

It is a schematic plan view of the light emitting device which concerns on Embodiment 1. FIG. FIG. 5 is a cross-sectional view taken along the line AA in FIG. 1A. FIG. 5 is a cross-sectional view taken along the line BB in FIG. 1A. FIG. 5 is a cross-sectional view taken along the line CC in FIG. 1A. It is a schematic plan view of a substrate. FIG. 2 is a cross-sectional view taken along the line DD in FIG. 2A. FIG. 5 is a cross-sectional view taken along the line EE in FIG. 2A. It is a schematic plan view of a lens array. FIG. 5 is a cross-sectional view taken along the line FF in FIG. 3A. FIG. 5 is a cross-sectional view taken along the line GG in FIG. 3A. FIG. 5 is a cross-sectional view taken along the line HH in FIG. 3A. It is a schematic plan view of the semiconductor laser element arranged on the substrate. FIG. 6 is a cross-sectional view taken along the line II in FIG. 4A. It is a cross-sectional view of JJ in FIG. 4A. It is a figure which enlarges and shows the part surrounded by the broken line in FIG. 4C. It is a schematic plan view of a sealing member. FIG. 5 is a cross-sectional view taken along the line KK in FIG. 5A. FIG. 5 is a cross-sectional view taken along the line LL in FIG. 5A. It is a schematic plan view of the light emitting device which concerns on Embodiment 2. FIG. FIG. 6 is a cross-sectional view taken along the line MM in FIG. 6A. FIG. 6 is a cross-sectional view taken along the line NN in FIG. 6A. FIG. 6 is a cross-sectional view taken along the line OO in FIG. 6A. It is a schematic plan view of the light emitting device which concerns on Embodiment 3. It is a schematic plan view of the light emitting device which concerns on Embodiment 4. FIG.

[Light emitting device according to the first embodiment]
FIG. 1A is a schematic plan view of the light emitting device according to the first embodiment. 1B is a cross-sectional view taken along the line AA in FIG. 1A, FIG. 1C is a cross-sectional view taken along the line BB in FIG. 1A, and FIG. 1D is a cross-sectional view taken along the line CC in FIG. 1A. In FIG. 1A, the semiconductor laser element 30 and the like arranged below the upper left lens portion are transparently shown for easy understanding. As shown in FIGS. 1A to 1D, the light emitting device 1 according to the first embodiment includes a substrate 10, a lens array 20 having a plurality of lens portions 22 in a matrix, and a plurality of semiconductor lasers arranged on the substrate 10. A light emitting device including the element 30, each of the plurality of semiconductor laser elements 30 emits laser light, and each laser light has a beam shape in which the width becomes wider in the column direction than in the row direction. Each of the light incident surfaces LA, the plurality of lens portions 22 have a peak-to-peak distance PX in the row direction, which is smaller than both the maximum outer diameter E of each lens unit 22 and the peak-to-peak distance PY in the column direction. , A light emitting device having the same curvature in the row direction and the column direction. Hereinafter, they will be described in order.

(Hypokeimenon 10)
FIG. 2A is a schematic plan view of the substrate. 2B is a cross-sectional view taken along the line DD in FIG. 2A, and FIG. 2C is a cross-sectional view taken along the line EE in FIG. 2A. As shown in FIGS. 2A to 2C, the substrate 10 has, for example, a base 12, a side wall 14 protruding from the base 12, and a recess 10a formed by the base 12 and the side wall 14. The base portion 12 has a convex portion 12a, and the convex portion 12a is formed in the concave portion 10a. If the base portion 12 having such a convex portion 12a is used, the warp of the base portion 12 that can be caused by the base portion 10 having the concave portion 10a (this warp is likely to occur particularly when the base portion 12 and the side wall 14 are made of different materials. ) Can be suppressed, so that the semiconductor laser element 30 and the like can be easily mounted on the base 12. Further, by arranging members such as the semiconductor laser element 30 on the convex portion 12a, these members can be brought closer to the lens array 20, so that the laser beam on the light incident surface LA of the lens array 20 (lens portion 22) It is also possible to suppress the spread of. The shapes and thicknesses of the base 10, the base 12, and the side wall 14 are not particularly limited. For example, the base 10 includes a member having a recess 10a and, for example, a flat plate-shaped member (eg, a side wall 14). It is also possible to use a member which does not have and consists only of the base 12.

For the substrate 10 (base 12, side wall 14), for example, a metal material such as iron, iron alloy, or copper, a ceramic material such as AlN, SiC, or SiN, or a material obtained by combining these materials can be used.

The substrate 10 is provided with wiring 90 (eg, lead) for electrically connecting the light emitting device 1 to the outside. The wiring 90 may be provided on any of the outer circumferences of the light emitting device 1, but it is preferably provided on the upper surface or the side surface of the substrate 10. That is, it is preferable that the wiring 90 is not provided on the lower surface of the substrate 10. In this way, since the entire lower surface of the substrate 10 can be used as the mounting surface, even when a plurality of semiconductor laser elements 30 serving as heat sources are arranged on one substrate 10 as in the present disclosure, heat is drawn. A good light emitting device can be provided. When the wiring 90 is provided on the side wall 14 of the substrate 10, the height of the side wall 14 needs to be a certain value or more. Therefore, the semiconductor laser element 30 arranged on the base 12 is higher than the case where the wiring 90 is not provided on the side wall 14. Etc. will be arranged away from the lens array 20. However, if the base portion 12 having the convex portion 12a described above is used, the semiconductor laser element 30, the mirror 50, and the like can be arranged close to the lens array 20 (lens portion 22) even in such a case.

(Lens Array 20)
FIG. 3A is a schematic plan view of the lens array. 3B is a cross-sectional view taken along the line FF in FIG. 3A, FIG. 3C is a cross-sectional view taken along the line GG in FIG. 3A, and FIG. 3D is a cross-sectional view taken along the line HH in FIG. 3A. As shown in FIGS. 3A to 3D, the lens array 20 has a plurality of lens portions 22 and connection portions 24. Each lens unit 22 has a light incident surface LA and a light emitting surface LB, and each laser beam incident on the light incident surface LA of each lens unit 22 is refracted and is refracted from the light emitting surface LB of each lens unit 22. It is emitted. The connecting portion 24 connects the adjacent lens portions 22 to each other in the row direction (Y direction in FIG. 1). The lens array 20 may be composed of only the lens unit 22. In this case, for example, the lens portions 22 are directly connected to each other without the connection portion 24. The lens array 20 (lens portion 22 and connection portion 24) can be formed by using a translucent material such as glass or synthetic quartz.

(Multiple lens units 22)
The plurality of lens units 22 are provided in a matrix of m rows and n columns (m ≧ 2, n ≧ 1). The plurality of lens units 22 have vertices in the row direction (X direction in FIG. 1) that are smaller than both the maximum outer diameter E of each lens unit 22 and the inter-vertex distance PY in the column direction (Y direction in FIG. 1). Has a distance PX. In this way, since the lens portions 22 are formed in a row direction (X direction in FIG. 1) in a row direction (X direction in FIG. 1), the laser beam is not emitted in the row direction (X direction in FIG. 1). It is possible to reduce the waste of space and reduce the size of the lens array 20 (and thus the light emitting device 1). The "distance between vertices in the row direction" means the distance between vertices of adjacent lens portions in the row direction. Further, the "distance between vertices in the row direction" means the distance between vertices of adjacent lens portions in the row direction. The "vertex" refers to the center of the lens portion in plan view, and the "maximum outer diameter" refers to the longest diameter of the lens portion in plan view.

The distance between vertices PY in the row direction (Y direction in FIG. 1) can be preferably 1 mm or more and 12 mm or less, and more preferably 3 mm or more and 9 mm or less. The inter-vertex distance PX in the row direction (X direction in FIG. 1) can be preferably 0.5 mm or more and 9 mm or less, and more preferably 2 mm or more and 6 mm or less. By setting the inter-vertex distance PX and the inter-vertex distance PY to these lower limit values or more, it is possible to suppress the interference of laser beams from adjacent semiconductor laser elements 30. Further, by setting the inter-vertex distance PX and the inter-vertex distance PY to be equal to or less than these upper limit values, a smaller light emitting device can be provided.

The maximum outer diameter E of each lens unit 22 can be preferably 1 time or more and 2 times or less, and more preferably 1.25 times or more and 1.75 times or less of the inter-peak distance PX. By setting the maximum outer diameter E to be equal to or higher than these lower limit values, it is possible to suppress the interference of laser beams from adjacent semiconductor laser elements 30. Further, by setting the maximum outer diameter E to be equal to or less than these upper limit values, a smaller light emitting device can be provided.

The individual lens portions 22 have the same curvature in the row direction (X direction in FIG. 1) and the column direction (Y direction in FIG. 1). That is, each lens unit 22 has a curve of curvature RX in the cross section in the row direction (X direction in FIG. 1) passing through the apex of the lens unit 22, and also has a column direction passing through the apex of the lens unit 22 (in FIG. 1). Has a curve of curvature RY (curvature RX = curvature RY) equal to curvature RX in the cross section (in the Y direction of). In this way, even when the lens array 20 is mounted by slightly rotating from a predetermined direction, the light source (semiconductor laser element 30; the mirror 50 when the mirror 50 is provided; the same applies hereinafter) and the lens. Large deviations are unlikely to occur in the positional relationship of the portions 22. The individual lens portions 22 have the same curvature not only in the row direction (X direction in FIG. 1) and the column direction (Y direction in FIG. 1), but also in all directions passing through the apex of each lens portion 22. That is, it is preferable to have a curve of the same curvature in all the cross sections passing through the apex of each lens portion 22. In this way, the positional relationship between the light source and the lens unit 22 is less likely to be significantly deviated.

The plurality of lens portions 22 are not particularly limited, but preferably have a shape capable of collimating the laser light incident from the semiconductor laser element 30. For example, it is preferable that at least a part of each of the plurality of lens portions 22 is an aspherical curved surface (eg, the light incident surface LA is a flat surface and the light emitting surface LB is an aspherical curved surface). In this way, the laser light from the semiconductor laser element 30 can be parallelized without changing the light intensity distribution.

It is preferable that at least a part of the peripheral edge of each of the plurality of lens portions 22 has a circular arc shape in a plan view. In this way, more aspherical curved surfaces can be provided on the lens unit 22 as compared with the case where the lens unit 22 has another plan view shape, so that the laser light from the semiconductor laser element 30 can be efficiently used in the lens unit 22. Can be emitted from.

The lens array 20 can be fixed to the substrate 10 (the sealing member 80 when the sealing member 80 is provided between the substrate 10 and the lens array 20) by a known method. For example, when the lens array 20 is directly fixed to the substrate 10, the lens array 20 and the substrate 10 can be fixed by a method such as adhesive fixing, laser welding, or resistance welding. When fixing by laser welding, resistance welding, or the like, at least the portion to be welded in the lens array 20 is made of a metal material. Further, when the sealing member 80 is provided between the substrate 10 and the lens array 20, the lens array 20 and the sealing member 80 can be adhesively fixed by an adhesive such as a UV curable adhesive.

In order to make the space in which the semiconductor laser element 30 is arranged a closed space, it is preferable to fix the member that covers the substrate 10 by welding. However, welding tends to cause misalignment. Therefore, when the lens array is directly fixed to the substrate by welding and the substrate is directly covered with the lens array, the lens array is displaced and the light from the semiconductor laser element is directed to the lens portion in a predetermined mode (eg, a predetermined mode). There is a risk that it will not be possible to make an incident at a spread angle (predetermined positional relationship). Therefore, in the present embodiment, the sealing member 80, which is a member different from the lens array 20, is provided, and the base 10 is covered with the sealing member 80. In this way, the sealing member 80 can be fixed to the substrate 10 by welding, while the lens array 20 can be fixed to the sealing member 80 with a UV curable adhesive, so that the semiconductor laser element 30 can be fixed. The misalignment of the lens array 20 can be suppressed while the arranged space is made into a closed space by the sealing member 80.

(Multiple semiconductor laser elements 30)
FIG. 4A is a schematic plan view of the semiconductor laser device arranged on the substrate. 4B is a cross-sectional view taken along the line I-I in FIG. 4A, FIG. 4C is a cross-sectional view taken along the line JJ in FIG. 4A, and FIG. 4D is an enlarged view of a portion surrounded by a broken line in FIG. 4C. Is. As shown in FIGS. 4A to 4D, the plurality of semiconductor laser elements 30 are arranged on the substrate 10. Specifically, a plurality of semiconductor laser elements 30 are arranged in the row direction (X direction in FIG. 4) and the column direction (Y direction in FIG. 4). The semiconductor laser element 30 can be arranged directly on the bottom surface of the concave portion 10a of the substrate 10 (on the convex portion 12a when the base portion 12 having the convex portion 12a is used), or is arranged via the mounting body 40 or the like. You can also do it. If the heat generated by the plurality of semiconductor laser elements 30 is arranged via the mounting body 40, the heat generated by the plurality of semiconductor laser elements 30 can be efficiently exhausted through the mounting body 40.

Each of the plurality of semiconductor laser elements 30 emits laser light, and each laser light is incident on the light incident surface LA of each lens unit 22 directly or through a mirror 50 or the like. Each laser beam has a beam shape in which the width becomes wider in the column direction (Y direction in FIG. 1) than in the row direction (X direction in FIG. 1) at each light incident surface LA of the plurality of lens portions 22 (in the column direction). Beam width WY> Beam width in the row direction WX). For the plurality of semiconductor laser elements 30, a semiconductor laser element using a nitride semiconductor or the like can be used.

The plurality of semiconductor laser elements 30 can be electrically connected to each other by a wire 60 or the like. As the wire 60, gold, silver, copper, aluminum or the like can be used. The mode of connection is not particularly limited, but for example, a plurality of semiconductor laser elements 30 provided in the row direction (X direction in FIG. 1) can be connected in series by using a wire 60.

In FIG. 4A, a plurality of semiconductor laser elements 30 are arranged in a straight line in each row, and a relay member 70 is provided between adjacent semiconductor laser elements 30. Then, the adjacent semiconductor laser elements 30 are electrically connected by the wire 60 via the relay member 70. By doing so, the length of each wire 60 can be made relatively short, so that it is possible to suppress an increase in electrical resistance. Further, since the distance between the adjacent semiconductor laser elements 30 can be increased in each row, the thermal interference between the semiconductor laser elements 30 can be reduced. As the relay member 70, a metal material such as iron, iron alloy, or copper, or an insulating material such as AlN, SiC, or SiC having electrical wiring formed on the upper surface can be used. The semiconductor laser element 30 is not arranged on the relay member 70.

The upper surface of the relay member 70 is preferably located at substantially the same height as the upper surface of the mounting body 40 or the upper surface of the semiconductor laser element 30. In this way, the wire 60 can be easily mounted. When the semiconductor laser element 30 is provided on the mounting body 40, the upper surface of the relay member 70 is preferably located at substantially the same height as the upper surface of the mounting body 40. As a result, the thickness of the relay member 70 in the height direction can be reduced as compared with the case where the height is substantially the same as the upper surface of the semiconductor laser element 30, and the member cost can be reduced.

The semiconductor laser element 30 is provided in m rows and n columns (m ≧ 2, n ≧ 1) corresponding to each lens portion. At this time, the number of semiconductor laser elements 30 in the row direction is preferably larger than the number of semiconductor laser elements 30 in the column direction. The semiconductor laser element 30 is preferably provided so that the distribution of light (light as the light emitting device 1) from the plurality of semiconductor laser elements 30 is square. Thereby, when the light emitting device 1 is used as a part of the projector, the distribution of the light emitting intensity can be easily made uniform.

(Mirror 50)
As shown in FIGS. 4A to 4D, the light emitting device 1 may include a mirror 50 on the substrate 10 that reflects the emitted light of the semiconductor laser element 30 toward the lens unit 22. The mirror 50 is arranged so that the exit surface of the semiconductor laser element 30 (the surface that emits laser light; the same applies hereinafter) and the mirror 50 face each other. As a result, the distance (hereinafter referred to as "optical path length") until the laser light emitted from the light emitting surface of the semiconductor laser element 30 reaches the emitting surface of the lens unit 22 can be lengthened. Therefore, the light density on the light emitting surface of the lens array 20 can be reduced, and dust collection in the lens unit 22 can be easily suppressed. Further, by increasing the optical path length, the lens unit 22 can be used as compared with the case where the optical path length is short (for example, when the semiconductor laser element 30 directly irradiates the lens unit 22 with light without arranging the mirror 50). It is possible to reduce the change in the intensity distribution of the emitted light. This is because by lengthening the optical path length, even if the light from the semiconductor laser element 30 is incident from a direction other than perpendicular to the light incident surface of the lens unit 22 due to the misalignment of the semiconductor laser element 30, the lens unit 22 This is because the inclination of the light after passing through the light can be reduced.

The number and shape of the mirrors 50 are not particularly limited. For example, a plurality of mirrors long in the row direction (X direction in FIG. 1) may be arranged in a column, or a matrix of m rows and n columns (m ≧ 2, n ≧ 1) corresponding to the plurality of lens units 22. A plurality of mirrors 50 may be arranged in a shape. In the case of arranging in a matrix, one mirror 50 is provided for each of the plurality of lens portions 22, so that even if the positional relationship between a certain semiconductor laser element 30 and a certain mirror 50 is deviated, another semiconductor laser element The positional relationship between the 30 and the other mirror 50 is not affected. Therefore, the influence of the mounting deviation of one mirror 50 can be minimized.

Glass, synthetic quartz, sapphire, aluminum and the like can be used for the mirror 50. The mirror 50 has a reflecting surface that reflects the emitted light of the semiconductor laser element 30 (laser light emitted from the semiconductor laser element 30; the same applies hereinafter). A reflective film such as a dielectric multilayer film is provided on the reflective surface. When the emitted light of the plurality of semiconductor laser elements 30 is directly incident on the lens array 20 without using the mirror 50, for example, instead of the mirror 50, the plurality of semiconductor laser elements 30 are arranged in m rows and n columns ( They are arranged on the substrate 10 in a matrix of m ≧ 2 and n ≧ 1).

The mirror 50 is not particularly limited, but is preferably located directly below the apex of the lens unit 22. Above all, it is preferable that the reflecting portion of the mirror 50 is located directly below the apex of the lens portion 22. In this way, in the mirror 50, the emitted light of the semiconductor laser element 30 can be reflected toward the apex of the lens unit 22, so that the intensity distribution of the light emitted from the lens array 20 (lens unit 22) changes. It's hard to do. The reflecting portion referred to here refers to a portion of the reflecting surface provided on the mirror 50 that reflects the emitted light of the semiconductor laser element 30.

As shown in FIGS. 1A to 1D (see, for example, the semiconductor laser element 30 and the mirror 50 transparently shown in the lens portion 22 located at the upper left of FIG. 1A), the semiconductor laser element 30 and the mirror 50. Is preferably arranged inside the peripheral edge of the lens portion 22 in a plan view. In this way, since the semiconductor laser element 30 is arranged close to the mirror 50, it is possible to suppress an increase in the area of light emitted from the lens unit 22.

(Sealing member 80)
As shown in FIGS. 1A to 1D, the light emitting device 1 may include a sealing member 80 between the substrate 10 and the lens array 20. By providing the sealing member 80, the effect of airtight sealing can be enhanced as compared with the case where only the lens array 20 is provided. In particular, when a nitride semiconductor is used as the semiconductor laser device 30, organic substances and the like are likely to be collected on the exit surface of the semiconductor laser device 30, so that the effect of airtight sealing by the sealing member 80 becomes more remarkable.

FIG. 5A is a schematic plan view of the sealing member. 5B is a cross-sectional view taken along the line KK in FIG. 5A, and FIG. 5C is a cross-sectional view taken along the line LL in FIG. 5A. In FIG. 5A, the window portion 82a is transparently shown by a broken line for ease of understanding. As shown in FIGS. 5A to 5C, the sealing member 80 has a main body portion 82 having a plurality of window portions 82a and a translucent member 84. For the main body 82, glass, metal, ceramic, or a material obtained by combining these materials can be used, and metal is preferably used. As a result, the substrate 10 and the sealing member 80 can be fixed by welding or the like, which facilitates airtight sealing. Further, as the translucent member 84, at least a member that transmits the emitted light of the semiconductor laser element 30 can be used. The shape of the main body 82 and the translucent member 84 is not particularly limited. For example, in the present embodiment, the main body 82 has a recess 82b on the lens array 20 side, but when a flat plate-shaped member is used as the substrate 10, the recess 82b may be provided on the substrate 10 side.

The main body portion 82 may have one window portion 82a for each of two or more semiconductor laser elements 30, but each of the plurality of semiconductor laser elements 30 has one window portion 82a. Is preferable. In this way, the bonding area between the main body 82 excluding the window 82a and the translucent member 84 can be increased, so that the substrate 10 and the main body 82 are joined by resistance welding or the like for airtight sealing. In this case, cracking of the translucent member 84 due to stress can be suppressed.

As described above, according to the light emitting device 1 according to the first embodiment, the plurality of lens units 22 have the same curvature in the row direction (X direction in FIG. 1) and the column direction (Y direction in FIG. 1). Therefore, even when the lens array 20 is mounted by slightly rotating from a predetermined direction, the positional relationship between the light source and the lens unit 22 is unlikely to be significantly deviated, and the intensity distribution of the light emitted from the lens array 20 is large. It is possible to provide a light emitting device that does not change easily.

[Light emitting device 2 according to the second embodiment]
6A is a schematic plan view of the light emitting device according to the second embodiment, FIG. 6B is a sectional view taken along the line MM in FIG. 6A, FIG. 6C is a sectional view taken along the line NN in FIG. 6A, and FIG. 6D. Is a cross-sectional view taken along the line OO in FIG. 6A. In FIG. 6A, the semiconductor laser element 30 and the like arranged below the upper left lens portion are transparently shown for easy understanding. As shown in FIGS. 6A to 6D, in the light emitting device 2 according to the second embodiment, a plurality of lens arrays 20A, 20B, 20C, 20D are arranged in a row direction (Y direction in FIG. 1), and a plurality of lenses are arranged. The array 20A, 20B, 20C, and 20D are different from the light emitting device 1 according to the first embodiment in that each of the arrays 20A, 20B, 20C, and 20D has a plurality of lens portions 22 in the row direction (X direction in FIG. 1). Also in the second embodiment, as in the first embodiment, even when the lens array 20 is mounted by slightly rotating from a predetermined direction, the positional relationship between the light source and the lens portion 22 is unlikely to be significantly displaced. It is possible to provide a light emitting device in which the intensity distribution of light emitted from the lens array 20 does not change easily.

[Light emitting device 3 according to the third embodiment]
FIG. 7 shows a schematic plan view of the light emitting device 3 according to the third embodiment. In FIG. 7, the outer edge of the recess 82b is shown by a broken line. Further, in FIG. 7, the region where the lens array 20 is fixed to the sealing member 80 by the adhesive is hatched. As shown in FIG. 7, in the light emitting device 3, the lens array 20 includes a lens portion 22 and a connecting portion 24 for connecting the lens portions 22 to each other, and is fixed to the sealing member 80 by an adhesive at the connecting portion 24. ing. The sealing member 80 has a recess 82b recessed toward a region in which a plurality of semiconductor laser elements 30 are placed on the substrate 10. The lens array 20 has a through hole F inside the recess 82b and is fixed to the sealing member 80 by an adhesive on the outside of the recess 82b in a plan view.

When the space between the lens array and the sealing member is a closed space, when the lens array is fixed by an adhesive containing an organic substance (for example, a UV curable adhesive), the gas vaporized from the adhesive is the lens. It stays in the space between the array and the sealing member. At this time, the organic matter contained in the vaporized gas may react with the laser beam and be deposited on the translucent member or the lens array. On the other hand, if the connection portion 24 is provided with the through hole F, the space between the lens array 20 and the sealing member 80 becomes an open space, so that the gas vaporized from the adhesive escapes to the outside of the space. , It becomes easy to suppress the accumulation (dust collection) of organic matter. An open space is an open space.

It is preferable that a plurality of through holes F are provided. The plurality of through holes F are preferably provided line-symmetrically with respect to the center line of the lens array 20. By doing so, it becomes easy to form an air flow in the space between the lens array 20 and the sealing member 80 (for example, when two through holes are provided line-symmetrically, one through is provided. Air flows into the space from the hole, and an air flow that flows out of the space from the other through hole is easily formed.) Further, the gas vaporized from the adhesive is released to the outside of the space. , It is possible to suppress the accumulation (dust collection) of organic substances in the space. Further, it is possible to suppress the occurrence of dew condensation in the space between the lens array 20 and the sealing member 80. Since an adhesive containing an organic substance such as a UV curable adhesive is a material that easily absorbs moisture, when the lens array 20 is fixed by the UV curable adhesive, the moisture absorbed by the adhesive from the atmosphere. Is likely to stay in the space between the sealing member 80 and the lens array 20, and dew condensation may occur in the space depending on the usage conditions. Therefore, the above configuration for forming an air flow in the space can be particularly preferably applied when the lens array 20 is fixed to the sealing member 80 with an adhesive containing an organic substance such as a UV curable adhesive.

[Light emitting device 4 according to the fourth embodiment]
FIG. 8 shows a schematic plan view of the light emitting device 4 according to the fourth embodiment. In FIG. 8, the outer edge of the recess 82b is shown by a solid line and a broken line. Further, in FIG. 8, the region where the lens array 20 is fixed to the sealing member 80 by the adhesive is hatched. As shown in FIG. 8, in the light emitting device 4, the sealing member 80 has a recess 82b recessed toward a region in which a plurality of semiconductor laser elements 30 are placed on the substrate 10. The lens array 20 is arranged so that a part of the outer edge of the lens array 20 is located inside the recess 82b in a plan view (see the opening G in FIG. 8), and is adhered to the outside of the recess 82b. It is fixed to the sealing member 80 with an agent. Also in the light emitting device 4, since the space between the lens array 20 and the sealing member 80 is an open space, it becomes easy to suppress the accumulation (dust collection) of organic substances and the occurrence of dew condensation.

The number and arrangement of the openings G may be any as long as a part of the outer edge of the lens array 20 is located inside the recess 82b, and is not limited to the number and arrangement shown in FIG. However, it is preferable that the openings G are provided at two or more locations (not limited to the four corners) on the outer edge of the lens array 20 in a plan view. In this case, it is preferable that the openings G are provided at positions symmetrical with respect to the center of the lens array 20. In this way, an air flow is formed in the space between the lens array 20 and the sealing member 80, as in the case where the plurality of through holes F are provided line-symmetrically with respect to the center line of the lens array 20. It will be easier to do. Therefore, it is possible to further suppress the accumulation (dust collection) of organic matter and the occurrence of dew condensation.

Although the third and fourth embodiments have been described above, the through hole F and the opening G are examples of a specific configuration in which the space between the lens array 20 and the sealing member 80 is an open space. The space between the lens array 20 and the sealing member 80 may be open so that the gas generated in the space can escape to the outside, and such an open space (that is, an open space) is concretely defined. There is no particular limitation on how it is configured.

Although the embodiments have been described above, the configurations described in the claims are not limited by these explanations.

1, 2, 3, 4 Light emitting device 10 Base 10a Concave 12 Base 12a Convex 14 Side wall 20, 20A, 20B, 20C, 20D Lens array 22 Lens 24 Connection 30 Semiconductor laser element 40 Mount 50 Mirror 60 Wire 70 Relay member 80 Sealing member 82 Main body 82a Window 82b Recess 84 Translucent member 90 Wiring PX Row-direction apex distance PY Column-direction apex distance WX Row-direction beam width WY Row-direction beam width LA Light incident Surface LB Light emission surface E Maximum outer diameter F Through hole G Opening X Row direction Y Column direction

However, in the conventional light source device, each lens element constituting the collimating lens array has a plurality of curvatures depending on the cross-sectional shape of the laser beam incident on each lens element. Therefore, even if the collimating lens array is mounted by slightly rotating from a predetermined direction, a large deviation occurs in the positional relationship between the light source and the lens element, and the intensity distribution of the light emitted from the collimating lens array changes. There is a risk.
Further, the change in the light intensity distribution is not limited to this, and may occur due to mounting deviation of a plurality of light sources, for example.

A plurality of light emitting devices disclosed in the present specification are arranged in a row direction and a column direction on a substrate having a base portion and a side wall, and on the upper surface of the base portion, and each of them emits light in the first direction. A plurality of mounting bodies that are provided one-to-one with a plurality of semiconductor laser elements to be emitted and the plurality of semiconductor laser elements, the semiconductor laser element is mounted on the upper surface, and the lower surface is arranged on the upper surface of the base. A row of mirrors provided on the plurality of semiconductor laser elements on a one-to-one basis, arranged in a matrix, and reflecting light emitted from the semiconductor laser elements, and above the plurality of semiconductor laser elements. Each of the plurality of mirrors is provided with a plurality of lens portions formed in the direction and the row direction, and is fixed to the substrate, and the plurality of mirrors are arranged in a matrix. The plurality of lens portions are arranged at positions separated from the semiconductor laser element in a one-to-one correspondence in the first direction at a distance shorter than the line-to-row distance of the semiconductor laser element, and the plurality of lens portions are at least a plurality of lenses arranged in the row direction. The portions are connected to each other, and different mirrors are located immediately below the apex of each lens portion. In the lens array, the distance between the apex of the two lens portions arranged adjacent to each other in the row direction is the column direction. It is a light emitting device smaller than the distance between the apexes of the two lens portions arranged adjacent to each other.

According to the above-mentioned light emitting device, mirrors can be individually mounted on each of the plurality of semiconductor laser elements, thereby improving the mounting accuracy and thus suppressing changes in the light intensity distribution.

Claims (8)

A light emitting device including a substrate, a lens array having a plurality of lens portions in a matrix, and a plurality of semiconductor laser elements arranged on the substrate.
The plurality of semiconductor laser elements emit laser light, respectively.
Each laser beam has a beam shape in which the width becomes wider in the column direction than in the row direction on each light incident surface of the plurality of lens portions.
The plurality of lens portions have an inter-peak distance smaller than both the maximum outer diameter of each lens portion and the inter-peak distance in the column direction, and have the same curvature in the row direction and the column direction. A light emitting device characterized by. A light emitting device including a substrate, a plurality of lens arrays arranged in a column direction and each having a plurality of lens portions in a row direction, and a plurality of semiconductor laser elements arranged on the substrate.
The plurality of semiconductor laser elements emit laser light, respectively.
Each laser beam has a beam shape in which the width becomes wider in the column direction than in the row direction on each light incident surface of the plurality of lens portions.
The plurality of lens portions have an inter-peak distance smaller than both the maximum outer diameter of each lens portion and the inter-peak distance in the column direction, and have the same curvature in the row direction and the column direction. A light emitting device characterized by. The light emitting device according to claim 1 or 2, wherein a mirror that reflects the emitted light of the semiconductor laser element toward the lens portion is provided on the substrate. The light emitting device according to claim 3, wherein the mirror is located immediately below the apex of the lens portion. The light emitting device according to any one of claims 1 to 4, wherein at least a part of the lens portion is formed of an aspherical curved surface. The light emitting device according to any one of claims 1 to 5, wherein at least a part of the peripheral edge of the lens portion has a circular arc shape in a plan view. The light emitting device according to any one of claims 1 to 6, wherein a sealing member is provided between the substrate and the lens array. The lens array includes a lens portion and a connecting portion for connecting the lens portions to each other, and is fixed to the sealing member by an adhesive at the connecting portion to be between the lens array and the sealing member. The light emitting device according to claim 7, wherein the space is an open space.

Images