JP2746809B2 - Package for storing optical semiconductor elements - Google Patents

Package for storing optical semiconductor elements

Info

Publication number
JP2746809B2
JP2746809B2 JP5035345A JP3534593A JP2746809B2 JP 2746809 B2 JP2746809 B2 JP 2746809B2 JP 5035345 A JP5035345 A JP 5035345A JP 3534593 A JP3534593 A JP 3534593A JP 2746809 B2 JP2746809 B2 JP 2746809B2
Authority
JP
Japan
Prior art keywords
metal
optical semiconductor
semiconductor element
metal frame
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5035345A
Other languages
Japanese (ja)
Other versions
JPH06252278A (en
Inventor
義明 植田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP5035345A priority Critical patent/JP2746809B2/en
Publication of JPH06252278A publication Critical patent/JPH06252278A/en
Application granted granted Critical
Publication of JP2746809B2 publication Critical patent/JP2746809B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は光半導体素子収納用パッ
ケージに関し、特に光半導体素子を気密に封止し、且つ
光半導体素子と光信号の授受を行うための光ファイバー
を保持し得る光半導体素子収納用パッケージに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device housing package, and more particularly to an optical semiconductor device capable of hermetically sealing an optical semiconductor device and holding an optical fiber for transmitting and receiving optical signals to and from the optical semiconductor device. It relates to a package for storage.

【0002】[0002]

【従来の技術】従来、光半導体素子を収容するための光
半導体素子収納用パッケージは図3に示すように外部リ
ード端子22が絶縁物23を介して固定され、上面に光半導
体素子24が載置される載置部21a を有するコバール金属
( 鉄ーニッケルーコバルト合金) や銅ータングステン合
金等から成る金属基体21と、前記光半導体素子載置部21
a を囲繞するようにして金属基体21上に銀ロウ等のロウ
材を介し取着され、側部に光ファイバーを貫通固定させ
るための固定部材26がロウ付け取着されたコバール金属
等から成る金属枠体25と、前記金属枠体25の上面に取着
され、光半導体素子24を気密に封止する金属蓋体27とか
ら構成されており、金属基体21の光半導体素子載置部21
a に光半導体素子24を接着固定するとともに光半導体素
子24の各電極をボンディングワイヤ28を介して外部リー
ド端子22に接続し、次に金属枠体25の上面に金属蓋体
27を取着させ、金属基体21と金属枠体25と金属蓋体27
とから成る容器内部に光半導体素子24を収容し、最後に
金属枠体25の固定部材26に、光ファイバー29に取着され
たフランジ30をレーザー光線の照射による溶接によって
接合させ、光ファイバー29を金属枠体25に固定すること
によって製品としての光半導体装置となる。
2. Description of the Related Art Conventionally, an optical semiconductor element housing package for housing an optical semiconductor element has an external lead terminal 22 fixed through an insulator 23 and an optical semiconductor element 24 mounted on an upper surface as shown in FIG. Kovar metal having a mounting portion 21a to be mounted
(Iron-nickel-cobalt alloy), a metal base 21 made of copper-tungsten alloy or the like, and the optical semiconductor element mounting portion 21
a metal such as Kovar metal or the like, which is attached to the metal base 21 via a brazing material such as silver brazing so as to surround a, and a fixing member 26 for fixing the optical fiber through the side is brazed and attached. A frame 25, and a metal lid 27 attached to the upper surface of the metal frame 25 and hermetically sealing the optical semiconductor element 24, the optical semiconductor element mounting portion 21 of the metal base 21
a, the electrodes of the optical semiconductor element 24 are connected to the external lead terminals 22 via bonding wires 28, and then the metal lid 27 is attached to the upper surface of the metal frame 25. , Metal base 21, metal frame 25 and metal lid 27
The optical semiconductor element 24 is housed inside a container consisting of: By fixing to the body 25, an optical semiconductor device as a product is obtained.

【0003】かかる光半導体装置は外部電気回路から供
給される駆動信号によって光半導体素子24に光を励起さ
せ、該励起された光を光ファイバー29を介して外部に伝
達することによって高速光通信等に使用される光半導体
装置として機能する。
Such an optical semiconductor device excites light in an optical semiconductor element 24 by a drive signal supplied from an external electric circuit, and transmits the excited light to the outside through an optical fiber 29 to perform high-speed optical communication or the like. It functions as an optical semiconductor device to be used.

【0004】尚、前記光半導体素子収納用パッケージは
金属基体21及び金属枠体25の表面に予め金が電解メッキ
法により所定厚みに層着されており、金属基体21及び金
属枠体25が酸化腐食するのを有効に防止するとともに金
属基体21の光半導体素子載置部21a に光半導体素子24が
強固に接着固定されるようになっている。
In the package for storing an optical semiconductor element, gold is previously layered to a predetermined thickness on the surfaces of the metal base 21 and the metal frame 25 by electrolytic plating, and the metal base 21 and the metal frame 25 are oxidized. Corrosion is effectively prevented, and the optical semiconductor element 24 is firmly adhered and fixed to the optical semiconductor element mounting portion 21a of the metal base 21.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、この従
来の光半導体素子収納用パッケージにおいては金属基体
21、金属枠体25及び固定部材26が金属材料から成り、そ
の各々が直接接触していることから金属基体21及び金属
枠体25の表面に電解メッキ法により金を層着させると金
属枠体25に取着されている固定部材26の表面にも金が層
着されてしまい、以下に述べる欠点が招来する。
However, in this conventional package for storing an optical semiconductor element, a metal substrate is not used.
21, since the metal frame 25 and the fixing member 26 are made of a metal material, and are in direct contact with each other, gold is layered on the surfaces of the metal base 21 and the metal frame 25 by an electrolytic plating method. Gold is also layered on the surface of the fixing member 26 attached to the fixing member 25, resulting in the following disadvantages.

【0006】即ち、光ファイバー29に取着されたフラン
ジ30を固定部材26にレーザー光線の照射による溶接によ
って接合させ、光ファイバー29を金属枠体25に固定する
際、レーザー光が固定部材26表面に層着されている金メ
ッキ層で反射を受けてフランジ30を固定部材26に強固に
接合させることができず、光ファイバー29の金属枠体25
への固定が不安定となって光半導体素子24が励起した光
を光ファイバー29を介し外部に良好に伝達することがで
きないという欠点を有していた。
That is, when the flange 30 attached to the optical fiber 29 is joined to the fixing member 26 by welding by irradiating a laser beam, and the optical fiber 29 is fixed to the metal frame 25, the laser light is layered on the surface of the fixing member 26. The flange 30 cannot be firmly joined to the fixing member 26 due to reflection by the gold plating layer, and the metal frame 25 of the optical fiber 29
There is a disadvantage that the light excited by the optical semiconductor element 24 cannot be transmitted to the outside via the optical fiber 29 satisfactorily due to the instability of the optical semiconductor device 24.

【0007】[0007]

【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は光ファイバーを金属枠体に強固に固定
し、光半導体素子が励起した光を光ファイバーを介して
外部に良好に伝達することができる光半導体素子収納用
パッケージを提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to fix an optical fiber firmly to a metal frame and to transmit light excited by an optical semiconductor element to the outside via the optical fiber. It is an object of the present invention to provide a package for accommodating an optical semiconductor element which can be performed.

【0008】[0008]

【課題を解決するための手段】本発明は外部リード端子
が絶縁物を介して固定され、上面に光半導体素子が載置
される載置部を有する金属基体と、前記光半導体素子載
置部を囲繞するようにして金属基体上に取着され、側部
に光ファイバーを固定するための固定部材が取着された
金属枠体と、前記金属枠体の上面に取着され、光半導体
素子を気密に封止する金属蓋体とから成る光半導体素子
収納用パッケージであって、前記金属枠体の側部に取着
された固定部材が金属枠体に直接接合する下地部材と該
下地部材に間に絶縁部材を挟んで取着される鍔部材とか
らなることを特徴とするものである。
According to the present invention, there is provided a metal base having an external lead terminal fixed via an insulator and having a mounting portion on which an optical semiconductor element is mounted on an upper surface, and the optical semiconductor element mounting portion. A metal frame attached to a metal substrate so as to surround the optical frame, and a fixing member for fixing an optical fiber to a side portion is attached to the metal frame, and the optical semiconductor element is attached to an upper surface of the metal frame. An optical semiconductor element housing package comprising a metal lid hermetically sealed, wherein a fixing member attached to a side portion of the metal frame body is directly bonded to the metal frame body; And a flange member attached with an insulating member interposed therebetween.

【0009】[0009]

【作用】本発明の光半導体素子収納用パッケージによれ
ば、金属枠体の側部に取着された固定部材が金属枠体に
直接接合する下地部材と該下地部材に間に絶縁部材を挟
んで取着される鍔部材とからなっており、下地部材と鍔
部材とは絶縁部材によって電気的に遮断されている。そ
のため金属枠体に金を電解メッキ法により層着しても鍔
部材には金メッキ層が層着することはなく、その結果、
鍔部材に光ファイバーに取着されたフランジをレーザー
光線の照射による溶接によって接合させればその接合は
極めて強固となり、光ファイバーの金属枠体への固定が
安定となって光半導体素子が励起した光を光ファイバー
を介し外部に良好に伝達することが可能となる。
According to the package for housing an optical semiconductor element of the present invention, the fixing member attached to the side of the metal frame sandwiches the insulating member between the base member directly joined to the metal frame and the base member. The base member and the flange member are electrically isolated by an insulating member. Therefore, even if gold is layered on the metal frame by the electrolytic plating method, the gold plating layer is not layered on the flange member, and as a result,
If the flange attached to the optical fiber is joined to the flange member by welding by irradiating a laser beam, the joining becomes extremely strong, the fixing of the optical fiber to the metal frame becomes stable, and the light excited by the optical semiconductor element is converted to the optical fiber. Satisfactorily to the outside via the

【0010】[0010]

【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1 及び図2は本発明の光半導体素子収納用パッケ
ージの一実施例を示し、1は金属基体、2 は金属枠体、3
は金属蓋体である。この金属基体1 、金属枠体2及び金
属蓋体3 とで光半導体素子4 を収容するための容器5 が
構成される。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and 2 show an embodiment of the package for storing an optical semiconductor element of the present invention, wherein 1 is a metal base, 2 is a metal frame, 3
Is a metal lid. The metal base 1, the metal frame 2, and the metal lid 3 constitute a container 5 for housing the optical semiconductor element 4.

【0011】前記金属基体1 はその上面中央部に光半導
体素子4 を載置するための載置部1aを有し、該載置部1a
上には光半導体素子4 が間にペルチェ素子等を挟んで接
着固定される。
The metal substrate 1 has a mounting portion 1a for mounting the optical semiconductor element 4 at the center of the upper surface thereof.
An optical semiconductor element 4 is adhered and fixed above with a Peltier element or the like interposed therebetween.

【0012】前記金属基体1 はコバール金属( 鉄ーニッ
ケルーコバルト合金) や銅ータングステン合金等から成
り、例えばコバール金属から成る場合、コバール金属の
インゴット( 塊) に従来周知の圧延加工法や打ち抜き加
工法、プレス加工法等を施すことによって所定形状に形
成される。
The metal substrate 1 is made of a Kovar metal (iron-nickel-cobalt alloy), a copper-tungsten alloy, or the like. It is formed into a predetermined shape by applying a working method, a press working method or the like.

【0013】また前記金属基体1 はその外表面に金が電
解メッキ方法により所定厚みに層着されており、該金の
メッキ層によって金属基体1 が酸化腐食するのが有効に
防止されているとともに載置部1aに光半導体素子4 が強
固に接着されるようになっている。
The metal substrate 1 has an outer surface coated with gold to a predetermined thickness by an electrolytic plating method. The gold plating layer effectively prevents the metal substrate 1 from being oxidized and corroded. The optical semiconductor element 4 is firmly adhered to the mounting portion 1a.

【0014】尚、前記金属基体1 の外表面に金のメッキ
層を層着させる際、その下地にニッケルのメッキ層を層
着させておくと金属基体1 と金メッキ層と被着強度を強
固となすことができる。従って、前記金属基体1 の外表
面に金のメッキ層を層着させる際にはその下地にニッケ
ルのメッキ層を層着させておくことが好ましい。
When a gold plating layer is formed on the outer surface of the metal substrate 1, a nickel plating layer may be formed on the gold base layer so that the adhesion strength between the metal substrate 1 and the gold plating layer is increased. I can do it. Therefore, when a gold plating layer is layered on the outer surface of the metal substrate 1, it is preferable that a nickel plating layer is layered on the underlayer.

【0015】また前記金属基体1 はその一部に複数個の
外部リード端子6 がガラス等の絶縁物7 を介して固定さ
れている。
A plurality of external lead terminals 6 are fixed to a part of the metal base 1 via an insulator 7 such as glass.

【0016】前記外部リード端子6 は光半導体素子4 の
電極を外部電気回路に電気的に接続する作用を為し、そ
の一端に光半導体素子4 の電極がボンディングワイヤ8
を介して接続され、また他端側は外部電気回路に半田等
のロウ材を介し接続される。
The external lead terminal 6 functions to electrically connect the electrodes of the optical semiconductor element 4 to an external electric circuit, and the electrode of the optical semiconductor element 4 is connected to the bonding wire 8 at one end.
And the other end is connected to an external electric circuit via a brazing material such as solder.

【0017】前記外部リード端子6 はコバール金属や4
2アロイ等の金属材料から成り、例えば、コバール金属
のインゴット( 塊) に圧延加工法や打ち抜き加工法、従
来周知の金属加工法を施すことによって所定の棒状に形
成される。
The external lead terminals 6 are made of Kovar metal or 4
It is made of a metal material such as a two-alloy, and is formed into a predetermined rod shape by subjecting a Kovar metal ingot (roll) to a rolling method, a punching method, or a conventionally known metal processing method.

【0018】また前記外部リード端子6 はその表面にニ
ッケル、金等の耐蝕性に優れ、且つロウ材と濡れ性の良
い金属を1.0 乃至20.0μm の厚みに層着させておくと外
部リード端子6 の酸化腐食が有効に防止されるとともに
外部リード端子6 へのボンディングワイヤ8 の接続を強
固となすことができる。従って、前記外部リード端子6
はその表面にニッケル、金等を1.0 乃至20.0μm の厚み
にメッキ法により層着させておくことが好ましい。
The external lead terminal 6 may be provided with a metal having excellent corrosion resistance, such as nickel and gold, and a good wettability with a brazing material to a thickness of 1.0 to 20.0 μm. This effectively prevents the oxidative corrosion of the external lead terminals 6 and the connection of the bonding wires 8 to the external lead terminals 6. Therefore, the external lead terminal 6
It is preferable that nickel, gold or the like is layered to a thickness of 1.0 to 20.0 μm on the surface by plating.

【0019】更に前記外部リード端子6 の金属基体1 へ
の固定は、金属基体1 に外部リード端子6 より若干大き
な径の穴をあけておき、この穴にリング状のガラスから
成る絶縁物7 と外部リード端子6 とを挿通させ、しかる
後、前記ガラスから成る絶縁物7 を加熱溶融させること
によって行われる。
Further, the external lead terminal 6 is fixed to the metal base 1 by drilling a hole having a diameter slightly larger than that of the external lead terminal 6 in the metal base 1. This is performed by inserting the external lead terminal 6 and then heating and melting the insulator 7 made of glass.

【0020】また更に前記外部リード端子6 が固定され
た金属基体1 は上面外周部に金属枠体2 が光半導体素子
載置部1aを囲繞するようにして取着されており、該金属
枠体2 によって内部に光半導体素子4 を収容するための
空所が形成される。
Further, the metal base 1 to which the external lead terminals 6 are fixed has a metal frame 2 attached to the outer periphery of the upper surface so as to surround the optical semiconductor element mounting portion 1a. 2 forms a space for accommodating the optical semiconductor element 4 therein.

【0021】前記金属枠体2 はコバール金属等から成
り、コバール金属のインゴット( 塊)にプレス加工を施
すことによって枠状に形成され、金属基体1 への取着は
金属基体1 上面と金属枠体2 の下面とを銀ロウ材を介し
ロウ付けすることによって行われている。
The metal frame 2 is made of Kovar metal or the like. The metal frame 2 is formed in a frame shape by pressing an ingot of the Kovar metal, and the metal frame 2 is attached to the metal substrate 1 by an upper surface and a metal frame. This is performed by brazing the lower surface of the body 2 with a silver brazing material.

【0022】前記金属枠体2 はその外表面に金等の耐蝕
性に優れる金属が層着されており、金のメッキ層によっ
て金属枠体2 の酸化腐食が有効に防止されている。
The metal frame 2 has an outer surface coated with a metal having excellent corrosion resistance, such as gold, and the gold plating layer effectively prevents the metal frame 2 from being oxidized and corroded.

【0023】尚、前記金属枠体2 表面への金の層着は金
属基体1 の外表面に電解メッキ法により金を層着させる
際に同時に所定厚みに層着される。
The gold is applied to the surface of the metal frame 2 at the same time as gold is applied to the outer surface of the metal substrate 1 by electrolytic plating to a predetermined thickness.

【0024】また前記金属枠体2 表面に金のメッキ層を
層着させる際、その下地にニッケルのメッキ層を層着さ
せておくと金属枠体2 と金メッキ層と被着強度を強固と
なすことができる。従って、前記金属枠体2 の表面に金
のメッキ層を層着させる際にはその下地にニッケルのメ
ッキ層を層着させておくことが好ましい。
When a gold plating layer is formed on the surface of the metal frame 2, if a nickel plating layer is layered on the underlayer, the adhesion strength between the metal frame 2 and the gold plating layer is enhanced. be able to. Therefore, when a gold plating layer is deposited on the surface of the metal frame 2, it is preferable to deposit a nickel plating layer on the underlayer.

【0025】前記金属枠体2 はまたその側部に固定部材
Aが取着されており、該固定部材Aは後述する光ファイ
バーBを金属枠体2 に固定する作用を為す。
A fixing member A is attached to the side of the metal frame 2, and the fixing member A functions to fix an optical fiber B described later to the metal frame 2.

【0026】前記固定部材Aは図2 に示すように下地部
材9 と絶縁部材10と鍔部材11とから構成されており、下
地部材9 及び鍔部材11はコバール金属等の金属材料で、
また絶縁部材10は酸化アルミニウム質焼結体等の電気絶
縁材で形成されている。
As shown in FIG. 2, the fixing member A comprises a base member 9, an insulating member 10, and a flange member 11. The base member 9 and the flange member 11 are made of a metal material such as Kovar metal.
The insulating member 10 is formed of an electrical insulating material such as an aluminum oxide sintered body.

【0027】前記固定部材Aの下地部材9 は固定部材A
を金属枠体2 に強固に固定する作用を為し、金属枠体2
に銀ロウ等のロウ材を介し取着される。
The base member 9 of the fixing member A is a fixing member A
Acts firmly on the metal frame 2 and the metal frame 2
Is attached through a brazing material such as silver brazing.

【0028】また前記固定部材Aの下地部材9 には絶縁
部材10が、更に絶縁部材10には鍔部材11が取着されてお
り、絶縁部材10は下地部材9 に鍔部材11を電気絶縁性を
維持した状態で取着させる作用を為す。
Further, an insulating member 10 is attached to the base member 9 of the fixing member A, and a flange member 11 is further attached to the insulating member 10. The insulating member 10 is formed by electrically connecting the flange member 11 to the base member 9. It acts to attach while maintaining.

【0029】前記絶縁部材10は、例えばアルミナ(Al 2
O 3 ) 、シリカ(SiO2 ) 、マグネシア(MgO) 、カルシア
(CaO) 等の原料粉末に適当な有機溶剤、溶媒を添加混合
して泥漿状となすとともにこれをドクターブレード法や
カレンダーロール法を採用することによってセラミック
グリーンシート( セラミック生シート) を形成し、しか
る後、前記セラミックグリーンシートに適当な打ち抜き
加工を施すとともに高温( 約1600℃) で焼成することに
よって製作される。
The insulating member 10 is made of, for example, alumina (Al 2
O 3 ), silica (SiO 2 ), magnesia (MgO), calcia
An appropriate organic solvent and a suitable organic solvent are added to the raw material powder such as (CaO) to form a slurry by adding and mixing a solvent and forming a ceramic green sheet (ceramic raw sheet) by employing a doctor blade method or a calendar roll method, Thereafter, the ceramic green sheet is manufactured by subjecting the ceramic green sheet to appropriate punching and firing at a high temperature (about 1600 ° C.).

【0030】更に前記絶縁部材10と下地部材9 及び鍔部
材11との取着は絶縁部材10の両主面に予めモリブデン、
タングステン、マンガン等の高融点金属粉末から成るメ
タライズ金属層を被着させておき、絶縁部材10の両主面
に被着させた各々のメタライズ金属層に下地部材9 と鍔
部材11とを銀ロウ等のロウ材を介しロウ付けすることに
よって行われる。
Further, the insulating member 10 is attached to the base member 9 and the flange member 11 by attaching molybdenum,
A metallized metal layer made of a high-melting metal powder such as tungsten or manganese is adhered to the metallized metal layer adhered to both main surfaces of the insulating member 10, and the base member 9 and the flange member 11 are coated with silver brazing. It is performed by brazing through a brazing material such as.

【0031】尚、前記絶縁部材10の両主面に被着される
メタライズ金属層はタングステン、モリブデン、マンガ
ン等の高融点金属粉末に適当な有機溶剤、溶媒を添加混
合して得た金属ペーストを絶縁部材10となるセラミック
グリーンシートに予め従来周知のスクリーン印刷法によ
り所定パターンに印刷塗布しておくことによって絶縁部
材10の両主面に被着される。
The metallized metal layer deposited on both main surfaces of the insulating member 10 is made of a metal paste obtained by adding a suitable organic solvent and a solvent to a high melting point metal powder such as tungsten, molybdenum, manganese or the like. The ceramic green sheet serving as the insulating member 10 is applied on both main surfaces of the insulating member 10 by printing and applying a predetermined pattern in advance by a conventionally known screen printing method.

【0032】また前記固定部材Aの鍔部材11には光ファ
イバーBに取着されたフランジ12が溶接され、これによ
って光半導体素子4 が励起した光を外部に伝達する光フ
ァイバーBが金属枠体2 に固定されることとなる。
A flange 12 attached to the optical fiber B is welded to the flange member 11 of the fixing member A, whereby the optical fiber B for transmitting the light excited by the optical semiconductor element 4 to the outside is attached to the metal frame 2. It will be fixed.

【0033】前記固定部材Aの鍔部材11に対する光ファ
イバーBに取着されたフランジ12の溶接は、鍔部材11と
フランジ12とを当接させるとともに該当接部にレーザー
光線を照射し、両者を溶融一体化させることによって行
われる。この場合、鍔部材11と下地部材9 とは絶縁部材
10によって電気的に遮断されているため金属枠体2 の表
面に金を電解メッキ法により層着させる際、下地部材9
には金が層着するものの鍔部材11には層着せず、その結
果、鍔部材11に光ファイバーBに取着されたフランジ12
を当接させるとともに該当接部にレーザー光線を照射さ
せれば鍔部材11におけるレーザー光線の反射が皆無とな
って両者の溶接による接合が完全となり、これによって
光ファイバーBの金属枠体2 への固定が安定し、光半導
体素子4が励起した光を光ファイバーBを介し外部に良
好に伝達することが可能となる。
When the flange 12 attached to the optical fiber B is welded to the flange member 11 of the fixing member A, the flange member 11 and the flange 12 are brought into contact with each other and the corresponding contact portion is irradiated with a laser beam to fuse them together. This is done by In this case, the flange member 11 and the base member 9 are
When gold is electrolytically plated on the surface of the metal frame 2 by the electroplating method,
Although gold is layered on the flange member 11, the gold is not layered on the flange member 11, and as a result, the flange 12
When the laser beam is applied to the corresponding contact portion and the laser beam is not reflected on the flange member 11, there is no reflection of the laser beam, and the welding of the two is completed, thereby stably fixing the optical fiber B to the metal frame 2. Then, the light excited by the optical semiconductor element 4 can be transmitted to the outside via the optical fiber B.

【0034】前記金属枠体2 はまたその上面に金属蓋体
3 が取着され、金属基体1 と金属枠体2 と金属蓋体3 と
から成る容器5 内部に光半導体素子4 を気密に収容する
ことによって製品としての光半導体装置となる。
The metal frame 2 has a metal cover on its upper surface.
The optical semiconductor device 4 is attached, and the optical semiconductor element 4 is hermetically accommodated in a container 5 composed of the metal base 1, the metal frame 2, and the metal lid 3, thereby obtaining an optical semiconductor device as a product.

【0035】前記金属蓋体2 はコバール金属や42アロ
イ(鉄ーニッケル合金)等の金属材料から成り、シーム
ウエルド法等の溶接によって金属枠体2 の上面に取着さ
れる。
The metal cover 2 is made of a metal material such as Kovar metal or 42 alloy (iron-nickel alloy), and is attached to the upper surface of the metal frame 2 by welding such as seam welding.

【0036】かくして本発明の光半導体素子収納用パッ
ケージによれば、金属基体1 の光半導体素子載置部1aに
光半導体素子4 を接着固定するとともに光半導体素子4
の各電極をボンディングワイヤ8 を介して外部リード端
子6 に接続し、次に金属枠体2 の上面に金属蓋体3 を取
着させ、金属基体1 と金属枠体2 と金属蓋体3 とから成
る容器5 内部に光半導体素子4 を収容し、最後に金属枠
体3 の固定部材Aに、光ファイバーBに取着されたフラ
ンジ12をレーザー光線の照射による溶接によって接合さ
せ、光ファイバーBを金属枠体2 に固定することによっ
て製品としての光半導体装置となり、外部電気回路から
供給される駆動信号によって光半導体素子4 に光を励起
させ、該励起された光を光ファイバーBを介して外部に
伝達することによって高速光通信等に使用される光半導
体装置として機能する。
Thus, according to the package for housing an optical semiconductor element of the present invention, the optical semiconductor element 4 is bonded and fixed to the optical semiconductor element mounting portion 1a of the metal substrate 1, and
Are connected to the external lead terminals 6 via bonding wires 8, and then a metal cover 3 is attached to the upper surface of the metal frame 2, and the metal base 1, the metal frame 2, the metal cover 3, The optical semiconductor device 4 is accommodated in a container 5 made of a metal material. Finally, the flange 12 attached to the optical fiber B is joined to the fixing member A of the metal frame 3 by welding by irradiating a laser beam. An optical semiconductor device as a product is obtained by fixing the optical semiconductor device 4 to the body 2, and the optical semiconductor element 4 is excited by a drive signal supplied from an external electric circuit, and the excited light is transmitted to the outside via the optical fiber B. This functions as an optical semiconductor device used for high-speed optical communication or the like.

【0037】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能である。
The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention.

【0038】[0038]

【発明の効果】本発明の光半導体素子収納用パッケージ
によれば、金属枠体の側部に取着された固定部材が金属
枠体に直接接合する下地部材と該下地部材に間に絶縁部
材を挟んで取着される鍔部材とからなっており、下地部
材と鍔部材とは絶縁部材によって電気的に遮断されてい
る。そのため金属枠体に金を電解メッキ法により層着し
ても鍔部材には金メッキ層が層着することはなく、その
結果、鍔部材に光ファイバーに取着されたフランジをレ
ーザー光線の照射による溶接によって接合させればその
接合は極めて強固となり、光ファイバーの金属枠体への
固定が安定となって光半導体素子が励起した光を光ファ
イバーを介し外部に良好に伝達することが可能となる。
According to the package for housing an optical semiconductor element of the present invention, the fixing member attached to the side of the metal frame has a base member directly joined to the metal frame and an insulating member interposed between the base member. The base member and the flange member are electrically isolated by an insulating member. Therefore, even if gold is layered on the metal frame by the electrolytic plating method, the gold plating layer is not layered on the flange member, and as a result, the flange attached to the optical fiber on the flange member is welded by laser beam irradiation. By joining, the joining becomes extremely strong, the fixing of the optical fiber to the metal frame becomes stable, and the light excited by the optical semiconductor element can be transmitted well to the outside via the optical fiber.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光半導体素子収納用パッケージの一実
施例を示す断面図である。
FIG. 1 is a sectional view showing an embodiment of a package for housing an optical semiconductor element of the present invention.

【図2】図1に示すパッケージの要部拡大断面図であ
る。
FIG. 2 is an enlarged sectional view of a main part of the package shown in FIG.

【図3】従来の光半導体素子収納用パッケージの断面図
である。
FIG. 3 is a sectional view of a conventional package for housing an optical semiconductor element.

【符号の説明】[Explanation of symbols]

1・・・・金属基体 2・・・・金属枠体 3・・・・金属蓋体 4・・・・光半導体素子 6・・・・外部リード端子 9・・・・下地部材 10・・・・絶縁部材 11・・・・鍔部材 A・・・・固定部材 B・・・・光ファイバー DESCRIPTION OF SYMBOLS 1 ... Metal base 2 ... Metal frame 3 ... Metal cover 4 ... Optical semiconductor element 6 ... External lead terminal 9 ... Base member 10 ... · Insulating member 11 ··· Flange member A ··· Fixing member B ··· Optical fiber

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】外部リード端子が絶縁物を介して固定さ
れ、上面に光半導体素子が載置される載置部を有する金
属基体と、前記光半導体素子載置部を囲繞するようにし
て金属基体上に取着され、側部に光ファイバーを固定す
るための固定部材が取着された金属枠体と、前記金属枠
体の上面に取着され、光半導体素子を気密に封止する金
属蓋体とから成る光半導体素子収納用パッケージであっ
て、前記金属枠体の側部に取着された固定部材が金属枠
体に直接接合する下地部材と該下地部材に間に絶縁部材
を挟んで取着される鍔部材とからなることを特徴とする
光半導体素子収納用パッケージ。
An external lead terminal is fixed via an insulator, a metal base having a mounting portion on which an optical semiconductor element is mounted on an upper surface, and a metal base surrounding the optical semiconductor element mounting portion. A metal frame attached to the base body, to which a fixing member for fixing the optical fiber to the side is attached; and a metal lid attached to the upper surface of the metal frame to hermetically seal the optical semiconductor element. An optical semiconductor element housing package comprising: a base member in which a fixing member attached to a side of the metal frame is directly bonded to the metal frame; and an insulating member interposed between the base member and the base member. An optical semiconductor element storage package, comprising a flange member to be attached.
JP5035345A 1993-02-24 1993-02-24 Package for storing optical semiconductor elements Expired - Fee Related JP2746809B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5035345A JP2746809B2 (en) 1993-02-24 1993-02-24 Package for storing optical semiconductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5035345A JP2746809B2 (en) 1993-02-24 1993-02-24 Package for storing optical semiconductor elements

Publications (2)

Publication Number Publication Date
JPH06252278A JPH06252278A (en) 1994-09-09
JP2746809B2 true JP2746809B2 (en) 1998-05-06

Family

ID=12439279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5035345A Expired - Fee Related JP2746809B2 (en) 1993-02-24 1993-02-24 Package for storing optical semiconductor elements

Country Status (1)

Country Link
JP (1) JP2746809B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956764B (en) * 2011-08-31 2015-08-12 盈胜科技股份有限公司 The method for packing of airtight type multilayer array type light emitting diode
JP6288132B2 (en) * 2015-05-20 2018-03-07 日亜化学工業株式会社 Light emitting device
CN106168333B (en) 2015-05-20 2020-11-06 日亚化学工业株式会社 Light emitting device
JP2017098549A (en) * 2015-11-18 2017-06-01 日亜化学工業株式会社 Light-emitting device

Also Published As

Publication number Publication date
JPH06252278A (en) 1994-09-09

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