JP2009080978A - Illuminating apparatus - Google Patents

Illuminating apparatus Download PDF

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JP2009080978A
JP2009080978A JP2007248002A JP2007248002A JP2009080978A JP 2009080978 A JP2009080978 A JP 2009080978A JP 2007248002 A JP2007248002 A JP 2007248002A JP 2007248002 A JP2007248002 A JP 2007248002A JP 2009080978 A JP2009080978 A JP 2009080978A
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light emitting
semiconductor light
conductor
led
emitting element
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Kiyoshi Otani
清 大谷
Masahiro Izumi
昌裕 泉
Yumiko Hayashida
裕美子 林田
Tomohiro Sanpei
友広 三瓶
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Toshiba Lighting and Technology Corp
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Toshiba Lighting and Technology Corp
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Priority to JP2007248002A priority Critical patent/JP2009080978A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an illumination apparatus which can optimally arrange LEDs (semiconductor light emitting elements) which are provided alternately with electric conductors and has an excellent connecting workability of a bonding wire with the electric conductor and can improve an extraction efficiency of light emitted from the LEDs. <P>SOLUTION: A plurality of LEDs are arranged in a row with spaces on one surface of a mounting board 2. A plurality of electric conductors 6 arranged alternately with each of the LEDs are provided with a metal base 7 which has a trapezoidal cross-section having an inclined side 7c connecting a base side 7a and an upper side 7b parallel with the base side 7a and having a square shape in a plane view, and a metal plated layer 8 bonded on the base 7 except for the base side 7a. The base side 7 is bonded with one surface of the mounting base 1 so that a part of the plated layer bonded on the inclined side 6d of the conductor 6 can face a side surface of the LED. The electric conductor 6 neighboring in an extension direction of the row of the LEDs and the LEDs 11 are electrically connected in series by a bonding wire. The LEDs, the electric conductors and the bonding wire are buried and sealed by a translucent sealing member. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、複数のチップ状LED(発光ダイオード)等の半導体発光素子を有して、例えば照明器具やディスプレイ等に使用される照明装置に関する。   The present invention relates to a lighting device having a semiconductor light emitting element such as a plurality of chip-shaped LEDs (light emitting diodes) and used for, for example, a lighting fixture or a display.

従来、複数の凹所が形成された絶縁部材上に、凹所に一端部が位置される複数の配線パターンを間隔的にかつ列状をなして配設するとともに、これら配線バターン間に位置されるLEDチップを各凹所内に配設し、LEDチップとこれに隣接した配線パターンとをボンディングワイヤによって電気的に直列接続し、各凹所内に注入された透光性の樹脂でLEDチップとボンディングワイヤを封止した光源装置が知られている(例えば、特許文献1参照。)。   Conventionally, a plurality of wiring patterns, one end of which is positioned in the recesses, are arranged in a row and in a row on an insulating member formed with a plurality of recesses, and positioned between these wiring patterns. LED chips are arranged in each recess, the LED chip and the wiring pattern adjacent to the LED chip are electrically connected in series by bonding wires, and the LED chip is bonded to the LED chip with a translucent resin injected into each recess. A light source device in which a wire is sealed is known (for example, see Patent Document 1).

この光源装置において、LEDチップは正面から見た形状が正方形であるとともに、このLEDチップの側面はチップ上面に対して直角に形成されている。これとともに、配線パターンは銅薄膜上に金属膜をメッキして形成されていて、この配線パターンのボンディングワイヤが接続される部位に対してLEDチップの上面は、上方又は下方に位置されている。
特開2002−94122号公報(段落0044ー0148、図1−図24)
In this light source device, the LED chip has a square shape when viewed from the front, and the side surface of the LED chip is formed at a right angle to the upper surface of the chip. At the same time, the wiring pattern is formed by plating a metal film on a copper thin film, and the upper surface of the LED chip is positioned above or below the portion to which the bonding wire of the wiring pattern is connected.
JP 2002-94122 A (paragraphs 0044-0148, FIGS. 1 to 24)

特許文献1のように交互に配設されたLEDチップと配線パターンとをボンディングワイヤで電気的に直列に接続してなる光源装置では、各LEDチップを、複数の配線パターンが作る列上に等間隔でかつ向きが不揃いにならないように適正に配設することが望ましい。しかし、こうした要望に対処するための技術事項は特許文献1には記載も示唆もない。各LEDチップが適正に配設されない場合には、各LEDチップの配設密度のばらつき等が各LEDチップからの放熱に影響するおそれがある。その結果、各LEDチップの発光特性がばらついて、輝度むらを生じる恐れが考えられる。   In a light source device in which LED chips and wiring patterns alternately arranged as in Patent Document 1 are electrically connected in series with bonding wires, each LED chip is placed on a row formed by a plurality of wiring patterns, etc. It is desirable to arrange them properly at intervals so that the directions are not uneven. However, Patent Document 1 neither describes nor suggests technical matters for dealing with such demands. If each LED chip is not properly disposed, variation in the density of the LED chips may affect the heat radiation from each LED chip. As a result, the light emission characteristics of the LED chips may vary, possibly causing uneven brightness.

又、通常、ワイヤボンディングをする際、ボンディング箇所は所定の温度以上となっている必要がある。しかし、特許文献1には、凹所内に位置された配線パターンの部位に、ボンディングワイヤを溶かして接続する場合に、この接続を速やかに行わせる技術については言及されていない。そのため、特許文献1の光源装置では、ワイヤボンディングを開始するのに、配線パターンが所定温度に達するまでに要す待ち時間が長く、これを改善することは生産性を向上する上で好ましい。   In general, when wire bonding is performed, the bonding location needs to be a predetermined temperature or higher. However, Patent Document 1 does not mention a technique for promptly performing this connection when the bonding wire is melted and connected to the portion of the wiring pattern located in the recess. Therefore, in the light source device of Patent Document 1, the waiting time required for the wiring pattern to reach a predetermined temperature is long to start wire bonding, and it is preferable to improve this to improve productivity.

LEDチップが発光したとき、このLEDチップの側面からも光が出射される。しかし、特許文献1の発光装置では、凹所内に位置された配線パターンの部位の先端がLEDチップの上面より上方に位置しているか、若しくは凹所内に位置された配線パターンの部位の先端が、LEDチップがダイボンドされた凸台部で覆われているので、凹所内に位置された配線パターンの部位の先端を利用して光を取出すことができない。   When the LED chip emits light, light is also emitted from the side surface of the LED chip. However, in the light-emitting device of Patent Document 1, the tip of the part of the wiring pattern located in the recess is located above the upper surface of the LED chip, or the tip of the part of the wiring pattern located in the recess is Since the LED chip is covered with the die-bonded convex base portion, it is not possible to take out light using the tip of the part of the wiring pattern located in the recess.

本発明の目的は、電気導体と交互に設けられる半導体発光素子を適正に配設できるともに、電気導体へのボンディングワイヤの接続作業性がよく、かつ、半導体発光素子が発した光の取出し効率を向上できる照明装置を提供することにある。   An object of the present invention is to appropriately arrange semiconductor light emitting elements provided alternately with electric conductors, to improve the workability of connecting bonding wires to electric conductors, and to take out the light emitted from the semiconductor light emitting elements. The object is to provide a lighting device that can be improved.

請求項1の発明は、装置基板と;第1の素子電極及び第2の素子電極を有して前記装置基板の一面に間隔的にかつ列状をなして配設された複数の半導体発光素子と:互いに平行な底辺及び上辺にわたる辺が斜状をなした台形状断面を有しかつ正面から見た形状が四角状に作られた金属のベース、及びこのベースに前記底辺を除いて被着された金属のメッキ層を有してなり、前記斜状をなした辺に被着された前記メッキ層の一部が前記半導体発光素子の側面に対向するように前記底辺を前記装置基板の一面に接着して前記各半導体発光素子と交互に配設された複数の電気導体と;これら電気導体と前記素子電極とに接続されて前記半導体発光素子の列が延びる方向に隣接した前記電気導体と前記半導体発光素子とを電気的に直列接続したボンディングワイヤと;前記半導体発光素子、電気導体、及びボンディングワイヤを埋設した透光性の封止部材と;を具備したことを特徴としている。   The invention according to claim 1 is an apparatus substrate; a plurality of semiconductor light emitting elements having a first element electrode and a second element electrode and arranged on one surface of the apparatus substrate at intervals and in rows. And: a metal base having a trapezoidal cross section in which the sides extending parallel to each other and the upper side are inclined, and having a square shape when viewed from the front, and the base is attached to the base except for the base A bottom surface of the device substrate so that a part of the plated layer deposited on the slanted side faces a side surface of the semiconductor light emitting device. A plurality of electrical conductors that are alternately disposed with the respective semiconductor light emitting elements, and the electrical conductors that are connected to the electrical conductors and the element electrodes and that are adjacent to each other in a direction in which a row of the semiconductor light emitting elements extends. A bonder in which the semiconductor light emitting element is electrically connected in series. Nguwaiya and; is characterized by comprising a; the semiconductor light emitting device, electrical conductors, and a light transmissive sealing member is embedded a bonding wire.

請求項1の発明で、装置基板には、全体が例えばガラスエポキシ樹脂、セラミックス、ガラス等の絶縁材料からなる絶縁基板を用いることができる他、半導体発光素子の放熱を高めるために金属ベースド基板を好適に用いることができる。金属ベースド基板の場合、金属ベースには例えばAl(アルミニウム)、Cu(銅)、Ni(ニッケル)等を使用でき、この金属ベースに積層されて装置基板の一面をなす絶縁層には例えばガラスエポキシ樹脂やセラミックス等の絶縁材料を使用できる。装置基板の一面は、光の取出し効率を向上する上で、光の反射率が90%以上の白色系絶縁材料等により形成することが好ましい。   In the first aspect of the invention, the device substrate can be an insulating substrate made entirely of an insulating material such as glass epoxy resin, ceramics, glass or the like, and a metal-based substrate can be used to increase heat dissipation of the semiconductor light emitting device. It can be used suitably. In the case of a metal-based substrate, for example, Al (aluminum), Cu (copper), Ni (nickel), etc. can be used for the metal base, and for example, glass epoxy is used for the insulating layer laminated on the metal base to form one surface of the device substrate. Insulating materials such as resin and ceramics can be used. One surface of the device substrate is preferably formed of a white insulating material having a light reflectance of 90% or more in order to improve light extraction efficiency.

請求項1の発明で、半導体発光素子には例えばチップ状のLED(発光ダイオード)を好適に用いることができる他、有機EL素子等も用いることが可能である。   In the invention of claim 1, for example, a chip-like LED (light emitting diode) can be suitably used as the semiconductor light emitting element, and an organic EL element or the like can also be used.

請求項1の発明で、電気導体の台形状断面での底辺とは、装置基板に接着される底面によって規定される辺を指しており、電気導体の台形状断面での上辺とは、装置基板に接着された底面面と平行な上面によって規定される辺を指している。電気導体のベースをなす金属には例えばCuを好適に用いることができるとともに、電気導体のメッキ層をなす金属には、Au(金)、Ni、Ag(銀)等を好適に用いることができる。   In the first aspect of the invention, the bottom side of the trapezoidal cross section of the electric conductor refers to the side defined by the bottom surface bonded to the device substrate, and the top side of the trapezoidal cross section of the electric conductor is the device substrate. Indicates the side defined by the top surface parallel to the bottom surface bonded to the surface. For example, Cu can be preferably used for the metal forming the base of the electric conductor, and Au (gold), Ni, Ag (silver), or the like can be preferably used for the metal forming the plating layer of the electric conductor. .

請求項1の発明で、電気導体の斜状をなす辺の長さは等しくても等しくなくても良い。請求項1の発明で、電気導体を正面から見た田形状が四角状であるとは、相対する二辺が二組とも平行である形状を指しており、この形状で、隣接した二辺は、丸みを帯びた隅部を形成して折れ曲がって連続していてもよいとともに、丸みを帯びることなく直角を成して折れ曲がって連続していてもよい。   In the first aspect of the invention, the lengths of the oblique sides of the electrical conductor may or may not be equal. In the invention of claim 1, the field shape of the electric conductor as viewed from the front is a square shape, and refers to a shape in which two opposite sides are parallel to each other, and in this shape, two adjacent sides are In addition to forming a rounded corner, it may be bent and continuous, or may be bent at a right angle without being rounded.

請求項1の発明で、ボンディングワイヤには、例えばAu等の金属細線を用いることができ、その線径は20μm〜30μmであることが好ましい。   In the invention of claim 1, for the bonding wire, for example, a fine metal wire such as Au can be used, and the wire diameter is preferably 20 μm to 30 μm.

請求項1の発明で、透光性の封止部材には、透明樹脂例えば透明シリコーン樹脂を好適に用いることができるが、その他に透明エポキシ樹脂等も用いることが可能であり、又、透明樹脂に代えて透光性の低融点ガラス等も用いることが可能である。請求項1の発明では、封止部材内に、これを透過して取出される光の色を規定するための蛍光体を混入しても、しなくてもよい。   In the invention of claim 1, a transparent resin such as a transparent silicone resin can be suitably used for the translucent sealing member, but a transparent epoxy resin or the like can also be used in addition to the transparent resin. Instead of this, translucent low-melting glass or the like can be used. In the invention of claim 1, the phosphor for defining the color of the light transmitted through the sealing member may or may not be mixed in the sealing member.

請求項1の発明で、半導体発光素子の列とは、電気的に直列に接続された複数の半導体発光素子の並びを指している。この半導体発光素子の列は少なくとも1列あればよく、半導体発光素子の列を複数設ける場合には、照明に要する光量をより多く確保できる。   In the first aspect of the invention, the column of semiconductor light emitting elements refers to an array of a plurality of semiconductor light emitting elements electrically connected in series. It is sufficient that at least one semiconductor light emitting element column is provided. When a plurality of semiconductor light emitting element columns are provided, a larger amount of light required for illumination can be secured.

本発明の照明装置を製造する上で、一般に、電気導体が配設された装置基板に対する半導体発光素子の実装位置は、電気導体を上方から視覚センサで撮像して得た撮像データと、半導体発光素子を実装する実装機(ダイボンディング装置)に予め記憶されているマスタデータとを比較照合する画像認識により、割り出している。それにより、実装機での装置基板の送りを調整することで、半導体発光素子の実装精度を向上させている。   In manufacturing the lighting device of the present invention, in general, the mounting position of the semiconductor light emitting element with respect to the device substrate on which the electrical conductor is disposed is determined by imaging data obtained by imaging the electrical conductor from above with a visual sensor, and semiconductor light emission. Indexing is performed by image recognition that compares and collates with master data stored in advance in a mounting machine (die bonding apparatus) for mounting elements. Thereby, the mounting accuracy of the semiconductor light emitting element is improved by adjusting the feeding of the device substrate in the mounting machine.

請求項1の発明では、台形状断面の電気導体を上方から視覚センサで撮像する際、平面形状が四角状をなす電気導体の上面での反射の方向と電気導体の側面での傾きに従う反射の方向が異なることにより、電気導体の上面と側面との境をなす四辺の撮像データを明確に取得できる。加えて、電気導体の平面形状が四角状であるので、この電気導体を画像認識する上で、電気導体の平面形状が略長円形や丸形である場合に比較して直線部が多く、撮像データとマスタデータとの比較照合が正確に行える。そのため、電気導体を位置決めの基準として装置基板に対する半導体発光素子の実装精度が向上されて、電気導体と交互に設けられる半導体発光素子を適正に配設できる。   According to the first aspect of the present invention, when an electric conductor having a trapezoidal cross section is imaged from above with a visual sensor, the reflection of the reflection according to the direction of reflection on the upper surface of the electric conductor having a square shape and the inclination on the side of the electric conductor Because the directions are different, it is possible to clearly acquire imaging data of four sides that make a boundary between the upper surface and the side surface of the electric conductor. In addition, since the planar shape of the electrical conductor is a square shape, there are more straight portions in image recognition of this electrical conductor than when the planar shape of the electrical conductor is substantially oval or round. Data and master data can be compared and verified accurately. Therefore, the mounting accuracy of the semiconductor light emitting element on the apparatus substrate is improved using the electric conductor as a reference for positioning, and the semiconductor light emitting element provided alternately with the electric conductor can be properly disposed.

更に、本発明の照明装置を製造する上での半導体発光素子とこれに隣接した電気導体との電気的接続は、ワイヤボンダを用いて行われ、その際、半導体発光素子が実装された装置基板を前記一面と平行な他面側から加熱して、電気導体等の温度を所定温度に上昇させた状態でワイヤボンディングする。この接続において、請求項1の発明では、電気導体の断面が台形状であり、その最も広い底面が装置基板の一面に接着されているので、装置基板の熱が電気導体に供給され易い。このため、電気導体が所定温度に達する時間、言い換えれば、ワイヤボンディングが開始するまでの時間が短くなるに伴い、電気導体にボンディングワイヤを接続するワイヤボンディングの作業性がよくなって、生産性を向上できる。   Furthermore, the electrical connection between the semiconductor light-emitting element and the electrical conductor adjacent to the semiconductor light-emitting element in manufacturing the lighting device of the present invention is performed using a wire bonder, and at that time, the device substrate on which the semiconductor light-emitting element is mounted is mounted. It heats from the other surface side parallel to the said one surface, and wire-bonds in the state which raised the temperature of the electrical conductor etc. to predetermined temperature. In this connection, according to the first aspect of the present invention, the cross section of the electric conductor is trapezoidal, and the widest bottom surface is bonded to one surface of the apparatus substrate, so that the heat of the apparatus substrate is easily supplied to the electric conductor. For this reason, as the time for the electric conductor to reach a predetermined temperature, in other words, the time until the wire bonding starts, the workability of wire bonding for connecting the bonding wire to the electric conductor is improved and the productivity is improved. It can be improved.

しかも、台形状断面をなした電気導体の斜状の側面が半導体発光素子の側面と対向するように、電気導体と半導体発光素子が装置基板の一面に配設されている。このため、点灯時に半導体発光素子の側面から出射されて封止部材を透過し電気導体の斜状の側面に入射した光は、電気導体の斜状側面によりこの斜状側面の傾きに見合って光の取出し方向に反射される。したがって、半導体発光素子が発した光の取出し効率を向上できる
請求項2の発明は、請求項1の発明において、前記各半導体発光素子は正面から見た形状が長四角状であり、これら半導体発光素子の長手方向一端側部位に前記第1の素子電極を設けるとともに前記半導体発光素子の長手方向他端側部位に前記第2の素子電極を設け、かつ、前記各電気導体が形成した導体列と前記各半導体発光素子の長辺が平行となるように前記各半導体発光素子を配設したことを特徴としている。
In addition, the electric conductor and the semiconductor light emitting element are arranged on one surface of the apparatus substrate so that the oblique side surface of the electric conductor having a trapezoidal cross section faces the side surface of the semiconductor light emitting element. For this reason, light that is emitted from the side surface of the semiconductor light emitting element during lighting, passes through the sealing member, and is incident on the oblique side surface of the electrical conductor is matched with the inclination of the oblique side surface by the oblique side surface of the electrical conductor. Reflected in the take-out direction. Therefore, it is possible to improve the light extraction efficiency of the light emitted from the semiconductor light emitting element. The invention according to claim 2 is the invention according to claim 1, wherein each of the semiconductor light emitting elements has a long square shape when viewed from the front. A conductor row provided with the first element electrode at one end portion in the longitudinal direction of the element and the second element electrode at the other end portion in the longitudinal direction of the semiconductor light-emitting element; The semiconductor light emitting elements are arranged so that the long sides of the semiconductor light emitting elements are parallel to each other.

請求項2の発明では、電気導体の相互間隔が同じである条件下で、これら電気導体の並び方向に半導体発光素子の長手方向が直交するように半導体発光素子を配設した場合に比較して、互いに隣接した半導体発光素子の電極と電気導体との距離が短くなるに伴い、半導体発光素子の側面から電気導体の斜状の側面に入射しようとする光の減衰が抑制されるので、光の取出し効率を向上できる。   In the invention of claim 2, compared with the case where the semiconductor light emitting element is disposed so that the longitudinal direction of the semiconductor light emitting element is orthogonal to the arrangement direction of the electric conductors under the condition that the distance between the electric conductors is the same. As the distance between the electrodes of the semiconductor light emitting elements adjacent to each other and the electric conductor becomes shorter, the attenuation of light entering the oblique side surfaces of the electric conductor from the side face of the semiconductor light emitting element is suppressed, Extraction efficiency can be improved.

請求項3の発明は、請求項2の発明において、前記各半導体発光素子及び各電気導体の並び方向と同方向に直線状に延びるように並べられた前記各ボンディングワイヤのワイヤ列に対する前記各半導体発光素子の傾き角度を、±10°以内としたことを特徴としている。   According to a third aspect of the present invention, in the second aspect of the present invention, the respective semiconductors with respect to the wire rows of the respective bonding wires arranged so as to extend linearly in the same direction as the arrangement direction of the respective semiconductor light emitting elements and the respective electric conductors. The tilt angle of the light emitting element is set within ± 10 °.

この請求項3の発明では、請求項2の発明の作用効果をより高めることができる。   In the invention of claim 3, the function and effect of the invention of claim 2 can be further enhanced.

請求項1の発明の照明装置によれば、電気導体と交互に設けられる半導体発光素子を適正に配設できるともに、電気導体へのボンディングワイヤの接続作業性がよく、かつ、半導体発光素子が発した光の取出し効率を向上できる、という効果がある。   According to the lighting device of the first aspect of the present invention, the semiconductor light emitting element provided alternately with the electric conductor can be properly disposed, the bonding work of the bonding wire to the electric conductor is good, and the semiconductor light emitting element is generated. It is possible to improve the light extraction efficiency.

請求項2,3の発明の照明装置によれば、半導体発光素子が発した光の取出し効率をより向上できる。   According to the illuminating device of the second and third aspects of the invention, it is possible to further improve the extraction efficiency of light emitted from the semiconductor light emitting element.

図1〜図4を参照して本発明の一実施形態を説明する。   An embodiment of the present invention will be described with reference to FIGS.

図1及び図2中符号1はLEDパッケージを形成するCOB(chip on board)型の照明装置を示している。この照明装置1は、装置基板2と、複数の電気導体6と、複数の半導体発光素子例えばチップ状のLED11と、ボンディングワイヤ15と、枠部材例えば枠形のリフレクタ21と、封止部材25等を備えて形成されている。   Reference numeral 1 in FIGS. 1 and 2 denotes a COB (chip on board) type lighting device that forms an LED package. The lighting device 1 includes a device substrate 2, a plurality of electric conductors 6, a plurality of semiconductor light emitting elements such as chip-shaped LEDs 11, bonding wires 15, a frame member such as a frame-shaped reflector 21, a sealing member 25, and the like. It is formed with.

図2に示すように装置基板2は、例えばAlの板からなる金属板3の表面に絶縁層4を積層して作られている。装置基板2は、照明装置1に必要とされる発光面積を得る大きさを有した所定形状をなしており、図1に示すように四角形例えば長方形である。装置基板2の表面である一面をなす絶縁層4は、例えば白色の絶縁材である合成樹脂板、具体的には光反射率が90%以上の白色のガラスエポキシ樹脂からなる。   As shown in FIG. 2, the device substrate 2 is made by laminating an insulating layer 4 on the surface of a metal plate 3 made of, for example, an Al plate. The device substrate 2 has a predetermined shape having a size for obtaining a light emitting area required for the lighting device 1, and is a quadrangle, for example, a rectangle as shown in FIG. The insulating layer 4 that forms one surface that is the surface of the device substrate 2 is made of, for example, a synthetic resin plate that is a white insulating material, specifically, a white glass epoxy resin having a light reflectance of 90% or more.

各々が電極パッドとして機能する複数の電気導体6は、その底面(図示しない)を装置基板2の表面をなした絶縁層4に接着することによって、長い方の辺6aが装置基板2の長辺と平行となるように揃えて、装置基板2の表面に間隔的に列状をなして配設されている。本実施形態で、各電気導体6は、装置基板2の横方向に1mm〜4mmの範囲で一定間隔例えば3mm〜4mmで等間隔に並べられているとともに、装置基板2の縦方向にも1mm〜4mmの範囲で一定間隔例えば3mm〜4mmで等間隔に並べて配設されている。したがって、各電気導体6は装置基板2の縦横に整列して配設されている。   The plurality of electrical conductors 6 each functioning as an electrode pad are bonded to the insulating layer 4 that forms the surface of the device substrate 2 at the bottom (not shown), so that the longer side 6 a becomes the longer side of the device substrate 2. Are arranged in a row at intervals on the surface of the device substrate 2 so as to be parallel to each other. In the present embodiment, the electrical conductors 6 are arranged at regular intervals, for example, 3 mm to 4 mm in the lateral direction of the device substrate 2 at regular intervals, for example, 3 mm to 4 mm, and 1 mm to the longitudinal direction of the device substrate 2. They are arranged at regular intervals in the range of 4 mm, for example, 3 mm to 4 mm and at equal intervals. Therefore, the electric conductors 6 are arranged in alignment in the vertical and horizontal directions of the device substrate 2.

ここに、装置基板2の縦方向とは図1で装置基板2の長手方向と直交する上下方向を指し、装置基板2の横方向とは図1で装置基板2の長手方向に沿う左右方向を指している。装置基板2の横方向に真っ直ぐ延びるように並べられた複数の電気導体6がなす列を導体列と称する。この導体列は複数あって、それらは装置基板2の縦方向に等間隔に設けられている。   Here, the vertical direction of the device substrate 2 refers to the vertical direction perpendicular to the longitudinal direction of the device substrate 2 in FIG. 1, and the lateral direction of the device substrate 2 refers to the lateral direction along the longitudinal direction of the device substrate 2 in FIG. pointing. A row formed by a plurality of electrical conductors 6 arranged so as to extend straight in the lateral direction of the device substrate 2 is referred to as a conductor row. There are a plurality of conductor rows, and they are provided at equal intervals in the vertical direction of the device substrate 2.

図4(B)で代表して示すように各電気導体6は、金属例えばCu製のベース7と金属例えばAu製のメッキ層8とを有してなる。ベース7は、互いに平行な底辺7a及び上辺7b間にわたる辺7cが斜状をなした台形状断面を有している。辺7cはベース7の斜状の側面によって規定されている。ベース7に斜状の側面を形成するための工程を格別に要さずに済むようにベース7は、絶縁層4の表面上に形成された銅の薄膜の特定箇所をエッチングにより食刻することで設けられている。メッキ層8は、ベース7にその底辺7aを規定する底面(図示しない)を除いて被着されている。   As representatively shown in FIG. 4B, each electric conductor 6 includes a base 7 made of metal, for example, Cu, and a plating layer 8 made of metal, for example, Au. The base 7 has a trapezoidal cross section in which a side 7c extending between the bottom side 7a and the upper side 7b parallel to each other has an oblique shape. The side 7 c is defined by the oblique side surface of the base 7. The base 7 etches a specific portion of the copper thin film formed on the surface of the insulating layer 4 by etching so that a process for forming the oblique side surface on the base 7 is not required. Is provided. The plated layer 8 is attached to the base 7 except for the bottom surface (not shown) that defines the bottom side 7a.

ベース7の上面の形状と相似形状をなした電気導体6の平面形状(言い換えれば正面から見た形状)は、長四角状、具体的には、図4(A)で代表して示すように互いに平行な直線からなる一組の辺6aと、これらの辺6aに直交する方向に沿って延びる互いに平行な直線からなる他の一組の辺6bと、隣接した辺6a、6bにわたってコーナー辺6cとで囲まれた形状をなしている。   The planar shape (in other words, the shape seen from the front) of the electric conductor 6 having a shape similar to the shape of the upper surface of the base 7 is an oblong shape, specifically, as representatively shown in FIG. A pair of sides 6a composed of straight lines parallel to each other, another set of sides 6b composed of mutually parallel straight lines extending in a direction perpendicular to these sides 6a, and a corner side 6c across adjacent sides 6a, 6b. The shape is surrounded by.

好ましい例として辺6aをこれに隣接した辺6bより長くしてある。このため、辺6aは長四角状の電気導体6の長辺をなし、辺6bは長四角状の電気導体6の短辺をなしている。各コーナー辺6cは円弧状である。したがって、電気導体6を正面から見た形状は、その四隅が丸みを帯びた長方形である。四隅が丸みを帯びた電気導体6は、辺6aと辺6b間に90度の尖った角からなる隅部を形成する場合に比較して、エッチングにより90度の尖った角を形成しなくてもよいので、ベース7の形成が容易である点で好ましい。   As a preferred example, the side 6a is longer than the side 6b adjacent thereto. Therefore, the side 6 a is the long side of the long rectangular electric conductor 6, and the side 6 b is the short side of the long square electric conductor 6. Each corner side 6c has an arc shape. Therefore, the shape of the electric conductor 6 viewed from the front is a rectangle with rounded corners. The electric conductor 6 having rounded four corners does not form a 90 ° sharp corner by etching as compared to the case where a 90 ° sharp corner is formed between the side 6a and the side 6b. Therefore, it is preferable in that the base 7 can be easily formed.

図4(A)に示すように各電気導体6の四隅間の直線部をなす辺6aの長さL1及び辺6bの長さL2は、いずれも200μm〜440μmで、かつ、コーナー辺6cの縦又は横方向に沿う長さL3の3倍以上である。具体的には、コーナー辺6cの横方向に沿う長さL3が30μmで、長い方の辺6aの長さL1が440μmである。同様に、コーナー辺6cの縦方向に沿う長さL3が30μmで、短い方の辺6bの長さL2は、440μm未満でかつL2≧L3の関係式を満たす長さである。又、図4(B)に示すように各電気導体6の上辺の長さL4と下辺の長さL5とは、L5≧L4≧0.9L5の関係式を満たしており、具体的には電気導体6の上辺の長さL4が500μmで、電気導体6の下辺の長さL5が530μmである。   As shown in FIG. 4 (A), the length L1 of the side 6a and the length L2 of the side 6b forming the straight line portion between the four corners of each electric conductor 6 are both 200 μm to 440 μm and the length of the corner side 6c. Or it is 3 times or more of the length L3 along a horizontal direction. Specifically, the length L3 along the lateral direction of the corner side 6c is 30 μm, and the length L1 of the longer side 6a is 440 μm. Similarly, the length L3 along the vertical direction of the corner side 6c is 30 μm, and the length L2 of the shorter side 6b is less than 440 μm and satisfies the relational expression L2 ≧ L3. Further, as shown in FIG. 4B, the length L4 of the upper side and the length L5 of the lower side of each electric conductor 6 satisfy the relational expression L5 ≧ L4 ≧ 0.9L5. The length L4 of the upper side of the conductor 6 is 500 μm, and the length L5 of the lower side of the electric conductor 6 is 530 μm.

図1及び図2に示すように複数の給電パターン9が、前記導体列をこの列が延びる方向に挟むように装置基板2の表面の長手方向両端部に夫々設けられている。言い換えれば、装置基板2の長手方向に対応した給電パターン9間に夫々導体列が位置されている。これら給電パターン9は、エッチングによる食刻で設けられた銅のベースとこの表面に被着されたAuのメッキ層とを有してなり、電気導体6の形成とともに装置基板2上に形成される。これらの給電パターン9には図示しない外部電線が半田付け等により接続され、この外部電線を介して外部電源(図示しない)に給電パターン9が電気的に接続される。   As shown in FIGS. 1 and 2, a plurality of power supply patterns 9 are provided at both ends in the longitudinal direction of the surface of the device substrate 2 so as to sandwich the conductor row in the direction in which the row extends. In other words, the conductor rows are positioned between the power feeding patterns 9 corresponding to the longitudinal direction of the device substrate 2. These power supply patterns 9 have a copper base provided by etching by etching and an Au plating layer deposited on this surface, and are formed on the device substrate 2 together with the formation of the electric conductor 6. . An external electric wire (not shown) is connected to the power supply pattern 9 by soldering or the like, and the electric supply pattern 9 is electrically connected to an external power source (not shown) via the external electric wire.

各LED11は、例えば窒化物半導体、具体的にはサファイア等からなる透光性の素子基板の一面に半導体発光層を積層してなる。半導体発光層は通電されることにより例えば青色の光を発する。   Each LED 11 is formed by laminating a semiconductor light emitting layer on one surface of a light-transmitting element substrate made of, for example, a nitride semiconductor, specifically sapphire. The semiconductor light emitting layer emits, for example, blue light when energized.

図3で代表して示すように各LED11の平面形状は、長四角形状であり、その長辺の長さをaとしかつ短辺の長さをbとすると、これらの比が、3.0≧b/a≧1.2となる大きさに作られている。   As representatively shown in FIG. 3, the planar shape of each LED 11 is an oblong shape, and when the length of the long side is a and the length of the short side is b, these ratios are 3.0. It is made into the magnitude | size which becomes> = b / a> = 1.2.

LED11は、その長手方向の一端側部位に第1の素子電極12を有しているとともに、同じく長手方向の他端側部位に第2の素子電極13を有している。各LED11の厚みは、図2に示すように電気導体6及び給電パターン9の厚みより厚い。 The LED 11 has a first element electrode 12 at one end side in the longitudinal direction, and a second element electrode 13 at the other end side in the longitudinal direction. The thickness of each LED 11 is thicker than the thickness of the electric conductor 6 and the power feeding pattern 9 as shown in FIG.

これら複数のLED11は、前記各導体列の夫々において導体列をなした電気導体6と交互に配設して装置基板2の表面に実装されている。したがって、各LED11も一定間隔毎に設けられて真っ直ぐな列状に配設されている。しかも、各LED11は、図3に示すように第1の素子電極12と第2の素子電極13の向きを揃えるとともに、互いに平行な長辺11aが前記導体列と平行となるように設けられている。ここに、各LED11の長辺11aが導体列と平行となるようにとは、図4(A)に中一点鎖線で示した前記導体列の中心線Aに対して、LED11の長辺11aが正確に平行ではなく、LED11が多少傾いてその長辺11aの延長線が交差する場合でも、その交差角(これをLEDの傾き角度と称する。)が±10°以内であることを指している。   The plurality of LEDs 11 are mounted on the surface of the device substrate 2 so as to be alternately arranged with the electric conductors 6 forming the conductor rows in the respective conductor rows. Accordingly, the LEDs 11 are also provided at regular intervals and arranged in a straight line. Moreover, each LED 11 is provided so that the first element electrode 12 and the second element electrode 13 are aligned as shown in FIG. 3, and the long sides 11a parallel to each other are parallel to the conductor row. Yes. Here, the long side 11a of each LED 11 is parallel to the conductor row. That is, the long side 11a of the LED 11 is in relation to the center line A of the conductor row indicated by the one-dot chain line in FIG. Even if the LED 11 is not exactly parallel and the LED 11 is slightly inclined and the extended line of the long side 11a intersects, it indicates that the intersection angle (referred to as the LED inclination angle) is within ± 10 °. .

このようなLED11の配設は図示しないダイボンダを用いて行われる。ダイボンダは、電気導体6を上方から視覚センサで撮像し、この撮像データと予め記憶されているマスタデータとを比較照合する画像認識によりLED11の実装位置を割り出して、装置基板2の基板送りを制御しつつLED11を装置基板2上にダイボンドする。このダイボンディングは、素子基板の半導体発光層が積層されていない他面を、図示しない透光性の熱硬化性の樹脂からなるダイボンド材により装置基板2の表面に接着することで行われる、こうしたダイボンド後に、ダイボンド材は、その硬化温度より高い温度で加熱して硬化される。   Such an arrangement of the LEDs 11 is performed using a die bonder (not shown). The die bonder takes an image of the electrical conductor 6 from above with a visual sensor, determines the mounting position of the LED 11 by image recognition for comparing and comparing this imaged data and pre-stored master data, and controls the board feed of the apparatus board 2 The LED 11 is then die-bonded on the device substrate 2. This die bonding is performed by bonding the other surface of the element substrate on which the semiconductor light emitting layer is not laminated to the surface of the device substrate 2 with a die bond material made of a light-transmitting thermosetting resin (not shown). After die bonding, the die bonding material is cured by heating at a temperature higher than its curing temperature.

図1に示すように装置基板2に実装されたLED11と、これに対して装置基板2の長手方向に隣接されている(言い換えれば、LED11の列が延びる方向に隣接して配設されている)電気導体6とは、いずれもボンディングワイヤ15で接続されているとともに、LED11と電気導体6とがなした列の両端に配置されたLED11と、これに接近している給電パターン9もボンディングワイヤ15で接続されている。各ボンディングワイヤ15は金属細線例えば線径が20μm〜30μmのAuの線からなる。   As shown in FIG. 1, the LED 11 mounted on the device substrate 2 is adjacent to the LED 11 in the longitudinal direction of the device substrate 2 (in other words, adjacent to the extending direction of the row of the LEDs 11). ) The electrical conductor 6 is connected to each other by a bonding wire 15, and the LED 11 disposed at both ends of the row formed by the LED 11 and the electrical conductor 6 and the feeding pattern 9 approaching the LED 11 are also bonded to the electrical conductor 6. 15 is connected. Each bonding wire 15 is made of a fine metal wire, for example, an Au wire having a wire diameter of 20 μm to 30 μm.

各ボンディングワイヤ15は、図1に示すように交互に配設された各LED11と各電気導体6の並び方向と同方向に直線状に延びるように並べられたワイヤ列をなしている。照明装置1を正面から見た場合に、ワイヤ列は導体列の中心線Aに一致するように設けられている。各ボンディングワイヤ15は装置基板2の長手方向に間隔的に実装された複数のLED11を電気的に直列に接続している。そのため、一対の給電パターン9を介して各LED11は給電されるようになっている。   As shown in FIG. 1, the bonding wires 15 form a wire row arranged so as to extend linearly in the same direction as the arrangement direction of the LEDs 11 and the electric conductors 6 arranged alternately. When the illumination device 1 is viewed from the front, the wire row is provided so as to coincide with the center line A of the conductor row. Each bonding wire 15 electrically connects a plurality of LEDs 11 that are mounted at intervals in the longitudinal direction of the device substrate 2 in series. Therefore, each LED 11 is supplied with power through a pair of power supply patterns 9.

ボンディングワイヤ15の取付けは図示しない超音波併用熱圧着ワイヤボンダを用いて行われる。このワイヤボンダによるワイヤボンディングでの第1ボンド(ファーストボンディング)は、LED11の第1の素子電極12又は第2の素子電極13に対して実施され、この後に行われる第2ボンド(セカンドボンディング)は、電気導体6又は給電パターン9に対して実施される。この場合、素子電極12,13、電気導体6、及び給電パターン9が所定温度に達するように装置基板2がその裏面から加熱された状態で実施される。   The bonding wire 15 is attached using an ultrasonic combined thermocompression wire bonder (not shown). The first bond (first bonding) in the wire bonding by the wire bonder is performed on the first element electrode 12 or the second element electrode 13 of the LED 11, and the second bond (second bonding) performed thereafter is This is performed on the electric conductor 6 or the feeding pattern 9. In this case, the device substrate 2 is heated from the back surface so that the device electrodes 12 and 13, the electric conductor 6, and the power supply pattern 9 reach a predetermined temperature.

リフレクタ21は、一個一個又は複数個のLED11毎に設けられるのではなく、装置基板2上の全てのLED11を包囲する単一のものであり、例えば図1に示すように四角形の枠形状をなしている。このリフレクタ21は、その内面での反射性能を得るために酸化マグネシウムなどからなる白色フィラーが混入された合成樹脂で形成されている。図1に示すようにリフレクタ21は、装置基板2の長手方向両端部に設けられた各給電パターン9を、上方から見て横切っている。   The reflector 21 is not provided for each LED 11 or each of the plurality of LEDs 11, but is a single one that surrounds all the LEDs 11 on the device substrate 2, and has a rectangular frame shape as shown in FIG. 1, for example. ing. The reflector 21 is formed of a synthetic resin mixed with a white filler made of magnesium oxide or the like in order to obtain reflection performance on the inner surface. As shown in FIG. 1, the reflector 21 crosses the power supply patterns 9 provided at both ends in the longitudinal direction of the device substrate 2 when viewed from above.

封止部材25は、リフレクタ21内に充填されていて、このリフレクタ21内に収容された全ての電気導体6、全てのLED11、全てのボンディングワイヤ15、及び給電パターン9のリフレクタ21内に挿入された端部を埋設して、これらを封止している。封止部材25は透光性の樹脂例えば熱硬化性のシリコーン樹脂からなる。封止部材25は、未硬化の状態でリフレクタ21内に充填された後に、加熱炉等によって加熱されることにより硬化される。   The sealing member 25 is filled in the reflector 21, and is inserted into the reflectors 21 of all the electrical conductors 6, all the LEDs 11, all the bonding wires 15, and the feeding pattern 9 accommodated in the reflector 21. These end portions are buried to seal them. The sealing member 25 is made of a translucent resin such as a thermosetting silicone resin. The sealing member 25 is cured by being heated in a heating furnace or the like after being filled in the reflector 21 in an uncured state.

この封止部材25には図示しない蛍光体が好ましくは均一に分散した状態で混入されている。蛍光体は、各LED11から放出された光の一部により励起されてLED11が発した光の色とは異なる色の光を放射し、それによって照明装置1から出射される照明光の色を規定するものである。本実施形態では、照明装置1の照明光を白色光とするために、各LED11が発する青色の光に対して補色の関係にある黄色の光を主に放射する蛍光体が使用されている。   The sealing member 25 is mixed with a phosphor (not shown), preferably in a uniformly dispersed state. The phosphor is excited by a part of the light emitted from each LED 11 and emits light having a color different from that of the light emitted from the LED 11, thereby defining the color of the illumination light emitted from the illumination device 1. To do. In the present embodiment, in order to change the illumination light of the illumination device 1 to white light, a phosphor that mainly emits yellow light that is complementary to the blue light emitted by each LED 11 is used.

前記構成の照明装置1の製造において、各LED11はダイボンダを用いて、既に電気導体6及び給電パターン9が装着された装置基板2の表面に、電気導体6に対して交互に配置されるように実装される。   In the manufacture of the lighting device 1 having the above-described configuration, the LEDs 11 are alternately arranged with respect to the electric conductors 6 on the surface of the device substrate 2 on which the electric conductors 6 and the power feeding patterns 9 are already mounted using a die bonder. Implemented.

このLED11の実装では、実装予定位置の左右方向(言い換えれば、実装予定位置に対して導体列が延びる方向)に隣接した電気導体6、及び/又は実装予定位置の上下方向(言い換えれば、実装予定位置に対して導体列が平行に並んだ方向)に隣接した電気導体6を、上方からダイボンダの視覚センサで撮像して、その撮像データをダイボンダのデータ処理部で電気導体6の形状及び位置を画像認識する。そして、ダイボンダは、認識された画像データと前記データ処理部に記憶されているマスタデータとを比較照合して、その比較照合に基づいて、電気導体6が実装されるLED11の位置を割り出す。更に、ダイボンダは、割り出された位置データにしたがって装置基板2の基板送りを行った上で、ダイボンド材を介して割り出された位置にLED11をダイボンドして実装する。   In the mounting of the LED 11, the electrical conductor 6 adjacent to the left and right direction of the planned mounting position (in other words, the direction in which the conductor row extends with respect to the planned mounting position) and / or the vertical direction (in other words, the planned mounting position). The electrical conductor 6 adjacent in the direction in which the conductor rows are arranged in parallel with respect to the position is imaged from above with a visual sensor of the die bonder, and the shape and position of the electrical conductor 6 are determined by the data processing unit of the die bonder. Recognize images. The die bonder then compares the recognized image data with the master data stored in the data processing unit, and determines the position of the LED 11 on which the electrical conductor 6 is mounted based on the comparison and verification. Further, the die bonder feeds the device substrate 2 according to the determined position data, and then mounts the LED 11 by die bonding at the position determined via the die bonding material.

こうしたLED11の実装での視覚センサによる撮像において、電気導体6の断面形状が台形状であるので、その正面の形状が四角状をなす電気導体6の上面での反射の方向と電気導体6の斜状側面での傾きに従う反射の方向が異なる。それにより、電気導体6の上面と側面との境をなす四辺の撮像データを明確に取得できる。加えて、電気導体6の平面形状が四角状であるので、この電気導体6を画像認識する上で、電気導体6の平面形状が略長円形や丸形である場合に比較して、撮像データとマスタデータとの比較照合を正確に行える。   In the imaging by the visual sensor in such mounting of the LED 11, the cross-sectional shape of the electric conductor 6 is trapezoidal. Therefore, the direction of reflection on the upper surface of the electric conductor 6 whose front shape is a square shape and the oblique angle of the electric conductor 6. The direction of reflection differs according to the inclination on the side surface. Thereby, the imaging data of the four sides forming the boundary between the upper surface and the side surface of the electric conductor 6 can be clearly obtained. In addition, since the planar shape of the electric conductor 6 is a square shape, the image data of the electric conductor 6 can be recognized when the electric conductor 6 is recognized as compared with the case where the planar shape of the electric conductor 6 is substantially oval or round. And master data can be compared and verified accurately.

既述のように正面から見た形状が四角状の電気導体6を位置決めの基準としてLED11の実装位置を割り出して装置基板2にLED11を実装するので、現状のダイボンダの基板送りの精度が一般的には±40μm〜100μmであるにも拘らず、実装されたLED11の実装精度が向上されて、その実装精度を±40μm以内とできる。その結果、等間隔に配設された電気導体6と交互に設けられるLED11が適正な位置にダイボンドされるので、前記中心線Aに対する各LED11の傾き角度を、±10°以内に配設できる。   As described above, the mounting position of the LED 11 is determined using the electric conductor 6 having a square shape when viewed from the front as a positioning reference and the LED 11 is mounted on the apparatus substrate 2. Although the mounting accuracy is ± 40 μm to 100 μm, the mounting accuracy of the mounted LED 11 is improved, and the mounting accuracy can be within ± 40 μm. As a result, the electric conductors 6 arranged at equal intervals and the LEDs 11 provided alternately are die-bonded at appropriate positions, so that the inclination angle of each LED 11 with respect to the center line A can be arranged within ± 10 °.

又、前記構成の照明装置1の製造において、電気的に直列に接続されるべき各LED11と、これらに隣接した電気導体6又は給電パターン9とは、それらにわたって配線されるボンディングワイヤ15を介して電気的に接続され、この接続はワイヤボンダを用いて行われる。   Further, in the manufacture of the lighting device 1 having the above-described configuration, each LED 11 to be electrically connected in series and the electric conductor 6 or the power feeding pattern 9 adjacent thereto are connected via bonding wires 15 wired over them. Electrically connected, this connection is made using a wire bonder.

このワイヤボンダでのワイヤボンディングでは、LED11が実装された装置基板2をその裏面側からワイヤボンダの加熱装置で加熱して、電気導体6等の温度を所定温度に上昇させた状態で、LED11の第1の素子電極12又は第2の素子電極13にボンディングワイヤ15を第1ボンドした後、ワイヤボンダのX−Yテーブルやキャピラリによる移動で、ボンディングワイヤ15を加熱された状態の電気導体6又は給電パターン9に押付けて、その押付け荷重と超音波振動とにより第2ボンドを行う。キャピラリによる押付け荷重は、第1ボンドをする場合よりも第2ボンドをする場合の方が大きいが、チップ状故に強度が小さいLED11には、第2ボンドをする場合の押付け荷重は加わらないので、第2ボンドに伴ってLED11が損傷する恐れがない。   In the wire bonding using the wire bonder, the device substrate 2 on which the LED 11 is mounted is heated from the back side by the wire bonder heating device, and the temperature of the electric conductor 6 and the like is raised to a predetermined temperature, and the first LED 11 of the LED 11 is mounted. After the bonding wire 15 is first bonded to the element electrode 12 or the second element electrode 13, the electric conductor 6 or the power supply pattern 9 in a state where the bonding wire 15 is heated by moving the wire bonder with an XY table or a capillary. The second bond is performed by the pressing load and ultrasonic vibration. The pressing load by the capillary is larger in the case of the second bond than in the case of the first bond, but the LED 11 having a low strength due to the chip shape is not applied with the pressing load in the case of the second bond. There is no fear that the LED 11 is damaged along with the second bond.

以上のワイヤボンディングにおいて、既述のように電気導体6の断面が台形状であり、その最も広い底面が装置基板2に接着されているので、装置基板2の熱が電気導体6に供給され易い。このため、電気導体6が所定温度に達する時間、言い換えれば、ワイヤボンディングを開始するまでの待ち時間が短くなり、それに伴い、電気導体6にボンディングワイヤ15を接合するワイヤボンディングの作業性がよくなって、生産性を向上できる。   In the wire bonding described above, the cross section of the electric conductor 6 has a trapezoidal shape as described above, and the widest bottom surface is bonded to the apparatus substrate 2, so that the heat of the apparatus substrate 2 is easily supplied to the electric conductor 6. . For this reason, the time for the electric conductor 6 to reach a predetermined temperature, in other words, the waiting time until the start of wire bonding is shortened, and accordingly, the workability of wire bonding for bonding the bonding wire 15 to the electric conductor 6 is improved. Productivity.

更に、電気導体6及びLED11は、いずれも四角状具体的には長四角状であって、その長手方向を揃えて装置基板2の表面に交互に並べられている。それにより、複数の電気導体6がなした導体列の中心線Aに対して各LED11が直交するように配設された状態でワイヤボンディングした場合に比較して、隣接した電気導体6とLED11の端部間の距離が近付けられる。   Furthermore, the electric conductors 6 and the LEDs 11 are both rectangular, specifically, long rectangular, and are arranged alternately on the surface of the device substrate 2 with the longitudinal direction aligned. Thereby, compared with the case where wire bonding is performed in a state where each LED 11 is arranged so as to be orthogonal to the center line A of the conductor row formed by the plurality of electric conductors 6, the adjacent electric conductor 6 and the LED 11 The distance between the ends is brought closer.

このため、隣接した電気導体6とLED11にわたるボンディングワイヤ15の長さを短くできる。これとともに、上方から見て各ボンディングワイヤ15が前記中心線A上に位置されるように配線できる。   For this reason, the length of the bonding wire 15 over the adjacent electrical conductor 6 and the LED 11 can be shortened. At the same time, the bonding wires 15 can be wired so as to be positioned on the center line A when viewed from above.

その上、電気導体6が長四角状で、その長手方向両端部にボンディングワイヤ15が第2ボンドされるので、電気導体6に対してボンディングワイヤ15が第2ボンドされる接合箇所間の距離が長くなる。そのため、電気導体6に対して後から接続されるボンディングワイヤ15を引き回すキャピラリ(ボンディング工具)が、電気導体6に先に接続されたボンディングワイヤ15と干渉することが抑制され、先に接続されたボンディングワイヤ15がキャピラリによって損傷しないようにできる。このことは、電気導体6をその長辺と同じ長さの四辺を有する四角形状とした場合でも同様に可能である。しかし、この場合には、電気導体6の面積が大きくなる分、所定の大きさの装置基板2の表面に装着される導体列の数が減る可能性があるとともに装置基板2の絶縁層4での光反射面積が減る可能性があり、それに伴い光の取出し効率が低下するので好ましくない。   In addition, since the electric conductor 6 has a long square shape and the bonding wire 15 is second bonded to both ends in the longitudinal direction, the distance between the bonding points where the bonding wire 15 is second bonded to the electric conductor 6 is small. become longer. Therefore, the capillary (bonding tool) for routing the bonding wire 15 to be connected later to the electric conductor 6 is prevented from interfering with the bonding wire 15 previously connected to the electric conductor 6 and is connected first. It is possible to prevent the bonding wire 15 from being damaged by the capillary. This is possible even when the electric conductor 6 is formed in a quadrangular shape having four sides having the same length as the long side. However, in this case, since the area of the electric conductor 6 is increased, the number of conductor rows mounted on the surface of the device substrate 2 having a predetermined size may be reduced and the insulating layer 4 of the device substrate 2 may be reduced. This is not preferable because the light reflection area may decrease, and the light extraction efficiency decreases accordingly.

既述のように隣接した電気導体6とLED11の端部間の距離が近付けられているので、それに伴い照明装置1の点灯時に、LED11の前記導体列が延びる方向に位置された側面11bからこれに対向するように位置された電気導体6の斜状側面6dに入射しようとする光の減衰が抑制される。そのため、電気導体6の斜状側面6dでの光の反射により、照明装置1の光の取出し効率を向上できる。   As described above, since the distance between the adjacent electrical conductors 6 and the ends of the LEDs 11 is reduced, when the lighting device 1 is turned on, the distance from the side surface 11b positioned in the direction in which the conductor row of the LEDs 11 extends is increased. Attenuation of light entering the oblique side surface 6d of the electric conductor 6 positioned so as to face the light is suppressed. Therefore, the light extraction efficiency of the lighting device 1 can be improved by the reflection of light at the oblique side surface 6d of the electric conductor 6.

この場合、既述のようにLEDの実装精度の向上により、LED11及び電気導体6の並び方向と同方向に直線状に延びるように並べられた各ボンディングワイヤ15のワイヤ列に対するLED11の傾き角度が、±10°以内となっているので、LED11の直角な角(ここからはLED11の側面に比較して光の出射が少ない。)を原因として、LED11から電気導体6の斜状側面6dに入射する光が減少することが抑制される。それにより、照明装置1の光の取出し効率をより向上できる。   In this case, as described above, by improving the mounting accuracy of the LED, the inclination angle of the LED 11 with respect to the wire row of the bonding wires 15 arranged to extend linearly in the same direction as the arrangement direction of the LED 11 and the electric conductor 6 is increased. Since the angle is within ± 10 °, the light enters the oblique side surface 6d of the electric conductor 6 from the LED 11 due to a right angle of the LED 11 (from here, the light emission is less than that of the side surface of the LED 11). It is suppressed that the light to do decreases. Thereby, the light extraction efficiency of the lighting device 1 can be further improved.

しかも、既述のように各LED11の前記傾き角度が±10°以内であることは、各LED11が等間隔でかつ向きが不揃いにならないように適正に配設されていることを意味している。そのため、各LED11の配設密度等のばらつき等を原因とする各LED11からの放熱のばらつきが抑制され、それに基づく各LED11の発光特性のばらつきが抑制される結果、輝度むらを生じないようにできる。   In addition, as described above, the inclination angle of each LED 11 being within ± 10 ° means that the LEDs 11 are properly arranged so as to be equally spaced and not unevenly oriented. . Therefore, variation in heat dissipation from each LED 11 caused by variation in the arrangement density of each LED 11 and the like is suppressed, and variation in light emission characteristics of each LED 11 based on the variation is suppressed, so that uneven brightness can be prevented. .

本発明の一実施形態に係る照明装置を一部切欠いた状態で示す正面図。The front view shown in the state which partly cut away the illuminating device which concerns on one Embodiment of this invention. 図1中F2−F2線に沿って示す照明装置の断面図。Sectional drawing of the illuminating device shown along F2-F2 line | wire in FIG. 図1の照明装置の一部を拡大してLEDと電気導体とボンディングワイヤとの関係を示す正面図。The front view which expands a part of illuminating device of FIG. 1, and shows the relationship between LED, an electrical conductor, and a bonding wire. (A)は図1の照明装置が有した電気導体を拡大して示す正面図、(B)は図4(A)中F4B−F4B線に沿って示す断面図。FIG. 5A is an enlarged front view showing an electrical conductor included in the lighting device of FIG. 1, and FIG. 5B is a cross-sectional view taken along line F4B-F4B in FIG.

符号の説明Explanation of symbols

1…照明装置、2…装置基板、4…装置基板の一面をなした絶縁層、6…電気導体、6a…電気導体の長い方の辺、6b…電気導体の短い方の辺、6c…電気導体のコーナー辺、6d…電気導体の斜状側面、7…ベース、7a…ベースの底辺、7b…ベースの上辺、7c…ベースの他の辺、8…メッキ層、9…給電パターン、11…LED(半導体発光素子)、11a…LEDの長辺、11b…LEDの側面、12…第1の素子電極、13…第2の素子電極、15…ボンディングワイヤ、25…封止部材   DESCRIPTION OF SYMBOLS 1 ... Illuminating device, 2 ... Device substrate, 4 ... Insulating layer which formed one side of device substrate, 6 ... Electrical conductor, 6a ... Long side of electrical conductor, 6b ... Short side of electrical conductor, 6c ... Electricity Corner side of conductor, 6d: oblique side surface of electric conductor, 7 ... base, 7a ... bottom side of base, 7b ... upper side of base, 7c ... other side of base, 8 ... plated layer, 9 ... feeding pattern, 11 ... LED (semiconductor light-emitting element), 11a ... long side of LED, 11b ... side face of LED, 12 ... first element electrode, 13 ... second element electrode, 15 ... bonding wire, 25 ... sealing member

Claims (3)

装置基板と;
第1の素子電極及び第2の素子電極を有して前記装置基板の一面に間隔的にかつ列状をなして配設された複数の半導体発光素子と:
互いに平行な底辺及び上辺にわたる辺が斜状をなした台形状断面を有しかつ平面から見た形状が四角状に作られた金属のベース、及びこのベースに前記底辺を除いて被着された金属のメッキ層を有してなり、前記斜状をなした辺に被着された前記メッキ層の一部が前記半導体発光素子の側面に対向するように前記底辺を前記装置基板の一面に接着して前記各半導体発光素子と交互に配設された複数の電気導体と;
これら電気導体と前記素子電極とに接続されて前記半導体発光素子の列が延びる方向に隣接した前記電気導体と前記半導体発光素子とを電気的に直列接続したボンディングワイヤと;
前記半導体発光素子、電気導体、及びボンディングワイヤを埋設した透光性の封止部材と;
を具備したことを特徴とする照明装置。
A device substrate;
A plurality of semiconductor light emitting elements each having a first element electrode and a second element electrode and arranged in a row and in a row on one surface of the device substrate;
A metal base having a trapezoidal cross-section in which the sides extending parallel to each other and the upper side are slanted, and the shape seen from the plane is formed in a square shape, and is applied to the base except the base The base is bonded to one surface of the device substrate so that a part of the plating layer deposited on the oblique side is opposed to the side surface of the semiconductor light emitting element. A plurality of electrical conductors arranged alternately with each of the semiconductor light emitting elements;
A bonding wire electrically connected in series to the electrical conductor and the semiconductor light emitting element adjacent to each other in the direction in which the row of the semiconductor light emitting elements extends and connected to the electrical conductor and the element electrode;
A translucent sealing member in which the semiconductor light emitting element, the electrical conductor, and the bonding wire are embedded;
An illumination device comprising:
前記各半導体発光素子は正面から見た形状が長四角状であり、これら半導体発光素子の長手方向一端側部位に前記第1の素子電極を設けるとともに前記半導体発光素子の長手方向他端側部位に前記第2の素子電極を設け、かつ、前記各電気導体が形成した導体列と前記各半導体発光素子の長辺が平行となるように前記各半導体発光素子を配設したことを特徴とする請求項1に記載の照明装置。   Each of the semiconductor light emitting elements has a long square shape when viewed from the front, and the first element electrode is provided at one end side in the longitudinal direction of these semiconductor light emitting elements and at the other end side in the longitudinal direction of the semiconductor light emitting element. The semiconductor light emitting element is provided so that the second element electrode is provided and a conductor row formed by the electric conductors and a long side of each semiconductor light emitting element are parallel to each other. Item 2. The lighting device according to Item 1. 前記各半導体発光素子及び各電気導体の並び方向と同方向に直線状に延びるように並べられた前記各ボンディングワイヤのワイヤ列に対する前記各半導体発光素子の傾き角度を、±10°以内としたことを特徴とする請求項2に記載の照明装置。   The inclination angle of each semiconductor light emitting element with respect to the wire array of each bonding wire arranged so as to extend linearly in the same direction as the arrangement direction of each semiconductor light emitting element and each electric conductor is within ± 10 °. The lighting device according to claim 2.
JP2007248002A 2007-09-25 2007-09-25 Illuminating apparatus Pending JP2009080978A (en)

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JP2014216436A (en) * 2013-04-24 2014-11-17 東芝ライテック株式会社 Lighting apparatus
JP2015038971A (en) * 2013-07-16 2015-02-26 パナソニックIpマネジメント株式会社 Board, light-emitting device, illumination light source, and luminaire
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JP2014216436A (en) * 2013-04-24 2014-11-17 東芝ライテック株式会社 Lighting apparatus
JP2015038971A (en) * 2013-07-16 2015-02-26 パナソニックIpマネジメント株式会社 Board, light-emitting device, illumination light source, and luminaire
JP2020170870A (en) * 2015-05-20 2020-10-15 日亜化学工業株式会社 Light emitting device
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