JP2010192606A - Light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device which is advantageous in a cost reduction, and also can enhance the efficiency of extracting light and fixing strength of a semiconductor light-emitting device. <P>SOLUTION: The light-emitting device 1 includes: a device substrate 2; a plurality of component mounting parts 4; and a plurality of LEDs (semiconductor light-emitting devices) 14. At least a substrate front side region 2a of the device substrate 2 is made of insulating materials. Each component mounting part 4 is arranged on the substrate front side region 2a. At least a crust (component mounting front region) 6 of these component mounting parts 4 is made of Al, and its surface roughness is rougher than a mirror face. The LED 14 has a light-emitting layer 14b on one face in a thickness direction of a translucent device substrate 14a. The other face to the thickness direction of the device substrate 14a is fixed to the crust 6 by use of translucent die bonding materials 15, and the LEDs 14 are mounted on each component mounting part 4, respectively. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a light-emitting device that includes a plurality of semiconductor light-emitting elements such as LEDs (light-emitting diodes) and emits them all at once to be used as, for example, a planar light source of a lighting fixture.

  A reflective area and a gold-plated terminal are provided on an insulating substrate, and a single-sided electrode type LED light-emitting element is mounted on the reflective area, and the element electrode and the gold-plated terminal are electrically connected by a bonding wire. Such an LED device is known as a prior art (see, for example, Patent Document 1).

  The reflection region has a three-layer structure including a copper plating layer laminated as a base on an insulating substrate, a gold plating layer laminated thereon, and a silver plating layer laminated on the gold plating layer. . Since this reflection area reflects light with a silver plating layer, it is suitable for an LED device that illuminates with white light. At the same time, the gold plating terminal portion has a two-layer structure including a copper plating layer laminated as a base on an insulating substrate and a gold plating layer laminated thereon. The single-sided electrode type LED is formed by providing an anode side element electrode and a cathode side element electrode on one side thereof.

  In this conventional LED device, the reflection region is not electrically connected to the circuit conductor of the printed wiring board, so that the silver migration phenomenon is prevented from occurring regardless of the high definition.

JP 2007-189006 A

  However, the LED device described in Patent Document 1 is disadvantageous in reducing the cost of the LED device because the reflective region formed larger than the gold-plated terminal portion has a gold-plated layer.

  Furthermore, in the LED device described in Patent Document 1, the relationship between the LED and the reflection region is not clear. By the way, when the LED device is viewed from the front side, the light emitted from the light emitting layer on the back side of the light emitting layer is incident on the projected area of the LED with respect to the reflection region, and the light is reflected. In the case where the light is reflected by the silver plating layer in the region, the LED device of Patent Document 1 has room for improvement in improving the light extraction efficiency.

  That is, since the reflection layer in the reflection region is formed of a silver plating layer, this plating surface is a mirror surface, so that the reflection of light incident on the projection region is easily reflected regularly and diffused. Difficult to reflect. Therefore, in the light emitting layer of the single-sided electrode type LED, the light emitted from the light emitting part located directly behind the pair of element electrodes and incident at right angles to the projection area composed of the mirror surface is specularly reflected by the silver plating layer. Is incident on the device electrode. Since the pair of element electrodes are made of metal, the reflected light from the silver plating layer incident thereon is blocked by the element electrodes, and this is a loss for light extraction.

  Moreover, the adhesion area with respect to the reflective area | region of LED die-bonded to the surface used as the mirror surface of a silver plating layer is substantially equal to the said projection area. The larger the adhesion area, the higher the fixing strength of the LED to the reflection region. However, since miniaturization of LEDs is progressing and the adhesion area tends to be small, nevertheless, measures that can secure the adhesion strength of the LEDs to the reflective region are desired.

  As described above, the prior art is disadvantageous in reducing the cost, and there is a problem that there is room for improvement in improving the light extraction efficiency and the fixing strength of the semiconductor light emitting element.

  In order to solve the above-mentioned problem, the invention of claim 1 is characterized in that at least a substrate front side portion is made of an insulating material; and a plurality of metal substrates are disposed on the substrate front side portion. A component mounting portion in which at least the mounting front portion is made of Al, and the surface roughness of the mounting front portion is rougher than the mirror surface; and a light emitting layer on one surface in the thickness direction of the translucent element substrate, A pair of element electrodes is provided on the light emitting layer side, and the other surface in the thickness direction of the element substrate is fixed to the mounting front part using a translucent die-bonding material, and mounted on each component mounting part. A plurality of single-sided electrode type semiconductor light emitting devices.

  In this invention and each of the following inventions, the device substrate may be an insulating substrate formed entirely of a single layer or multiple layers of insulating material, or may be formed by laminating an insulating layer on a metal base. It may be a metal base substrate, and the front side portion of the substrate refers to the surface portion of the device substrate to which the component mounting portion is fixed. In this invention and each of the following inventions, the metal layer is preferably a metal layer using a metal other than Ag or Au. For example, a metal layer formed by laminating an Al layer on a base metal layer made of Cu, etc. The metal layer which consists of a layer can be mentioned, The mounting front part has pointed out the surface part in which a semiconductor light emitting element is mounted.

  In this invention and each of the following inventions, the surface roughness of the mounting front part is formed to be rougher than the mirror surface, and the mounting front part is not provided by plating, and the ground surface of Al is polished or the like. The mirror surface is not applied, and as a result, the ground surface of the mounting front part is a diffuse reflection surface, but the surface of the mounting front part is roughened to roughen this surface. It is also possible to make it rougher than the mirror surface by processing.

  In this invention and each of the following inventions, an LED (light emitting diode) can be suitably used as the semiconductor light emitting element. In this case, it is preferable to use a chip-like LED in order to realize high-density mounting. In this invention and each of the following inventions, a single-sided electrode type semiconductor light-emitting element refers to a light-emitting element having an anode-side element electrode and a cathode-side element electrode on the light-emitting layer side on one surface in the thickness direction of the element substrate. Yes. In the present invention and each of the following inventions, a transparent synthetic resin or transparent glass can be used as the translucent die-bonding material. In particular, there is no fear of discoloration due to heat sufficiently withstanding the heat of the semiconductor light-emitting element. It is preferable to use a transparent silicone resin.

  In the light-emitting device according to the first aspect of the invention, in addition to the component mounting portion being formed of a metal layer that does not contain Ag or Au, at least the mounting front portion of the component mounting portion is made of Al at a low material cost. Therefore, it can contribute to the cost reduction of the light emitting device according to the fact that the cost of the component mounting portion can be reduced.

  In the light emitting device according to the first aspect of the present invention, since the mounting front part of the component mounting part is made of Al, the light incident from the semiconductor light emitting element through the die bond material is reflected. Compared with the case where the reflecting surface is made of Au or Ag, the material cost of the component mounting portion can be reduced. Furthermore, since part of the light reflected by the projection region of the semiconductor light emitting element with respect to the component mounting portion when viewed from the front side of the light emitting device is difficult to be blocked by the element electrode, the light extraction efficiency can be improved. That is, since the surface roughness of the mounting front part is rougher than the mirror surface, the reflection at the projection area is diffusely reflected even if the light is incident at a right angle to this, thereby reducing regular reflection. Can do. For this reason, as the reflected light of the light emitted from the light emitting portion located directly behind the pair of element electrodes and incident at right angles to the projection region becomes difficult to be blocked by the element electrodes, the extraction efficiency of the spectrum can be improved. .

  Furthermore, since the surface roughness of the mounting front part of the component mounting part is rougher than the mirror surface, the bonding strength of the die bond material to the mounting front part can be increased. Accordingly, the fixing strength of the semiconductor light emitting element to the component mounting portion can be improved.

  The invention according to claim 2 is an apparatus substrate in which at least a substrate front side portion is made of an insulating material; a plurality of metal substrates are disposed on the substrate front side portion, and at least a mounting front portion is made of Al. And a component mounting part in which the surface roughness of the mounting front part is formed to be rougher than the mirror surface; a light emitting layer on one surface in the thickness direction of the translucent element substrate, and a pair of element electrodes on the light emitting layer side A plurality of single-sided electrode type semiconductor light-emitting devices mounted on the respective component mounting portions, with the other surface in the thickness direction of the element substrate fixed to the mounting front surface portion using a translucent die-bonding material An element; a plurality of pads that are alternately arranged on the substrate front side portion of the device substrate and are arranged with at least the pad front side portion made of Au, Al, or Cu; Adjacent before It is characterized by comprising a; and a bonding wire provided to electrically connect the element electrode of the semiconductor light emitting element on the component mounting portion.

  Since the invention of claim 2 includes the device substrate, the component mounting portion, and the semiconductor light emitting element provided in the invention of claim 1, the material cost of the component mounting portion is reduced as in the invention of claim 1. In addition to being able to improve the light extraction efficiency because part of the light reflected by the mounting front side part of the component mounting part is not easily blocked by the element electrode of the single-sided electrode type semiconductor light emitting element, The fixing strength of the semiconductor light emitting element to the component mounting portion can be improved.

  According to a third aspect of the present invention, there is provided an apparatus substrate in which at least a substrate front side portion is made of an insulating material; a plurality of metal substrates are disposed on the substrate front side portion, and at least a mounting front portion is made of Al. And a component mounting part in which the surface roughness of the mounting front part is formed to be rougher than the mirror surface; a light emitting layer on one surface in the thickness direction of the translucent element substrate, and a pair of element electrodes on the light emitting layer side A plurality of single-sided electrode type semiconductor light-emitting devices mounted on the respective component mounting portions, with the other surface in the thickness direction of the element substrate fixed to the mounting front surface portion using a translucent die-bonding material An element; a first bonding wire that electrically connects one element electrode of the semiconductor light emitting element and the component mounting portion on which the light emitting element having the electrode is mounted; and the semiconductor light emitting element is mounted Said parts And a second bonding wire provided by electrically connecting the other element electrode of the semiconductor light emitting element mounted on the other component mounting section adjacent thereto. It is said.

  Since the invention of claim 3 also includes the device substrate, the component mounting portion, and the semiconductor light emitting element provided in the invention of claim 1, the material cost of the component mounting portion is reduced as in the invention of claim 1. In addition to being able to improve the light extraction efficiency because part of the light reflected by the mounting front side part of the component mounting part is not easily blocked by the element electrode of the single-sided electrode type semiconductor light emitting element, The fixing strength of the semiconductor light emitting element to the component mounting portion can be improved.

  The invention of claim 4 is the method according to any one of claims 1 to 3, wherein the component mounting portion is bonded to an Al surface layer forming the mounting front portion and a back surface of the surface layer. It is characterized by being a clad material composed of a Cu base layer fixed to the front side portion of the substrate.

  In the invention of claim 4, since the component mounting portion is formed of the clad material composed of the Al surface layer and the Cu underlayer, the diffuse reflection in which the background of the Al layer is rougher than the mirror surface due to the production process of the clad material. You can make use of the face. For this reason, a mounting front part can be obtained without requiring special processing, and this can contribute to cost reduction.

  According to the first to third aspects of the present invention, the material cost of the component mounting portion can be reduced, which is advantageous in reducing the cost of the entire apparatus. One of the lights reflected from the mounting front side portion of the component mounting portion. As the part can be prevented from being blocked by the element electrode of the single-sided electrode type semiconductor light emitting element, the light extraction efficiency can be improved, and the adhesion strength between the mounting front side portion and the die bond material has been increased. There is an effect that the fixing strength of the semiconductor light emitting element to the component mounting portion can be improved.

  According to the invention of claim 4, in the invention of claims 1 to 3, there is an effect that it is further advantageous in reducing the cost of the entire apparatus.

FIG. 2A is a front view showing a part of the light-emitting device according to the first embodiment of the present invention. (B) is an expanded sectional view shown along the arrow F1B-F1B line in FIG. 1 (A). It is an expanded sectional view shown along arrow F2-F2 line in FIG. (A) to (K) are cross-sectional views sequentially showing manufacturing steps of the light emitting device of FIG. It is sectional drawing equivalent to FIG. 2 which shows a part of light-emitting device which concerns on the 2nd Embodiment of this invention. 4A to 4F are cross-sectional views sequentially showing manufacturing steps of the light emitting device of FIG. (A) is a front view which cuts and shows a part of light-emitting device which concerns on the 3rd Embodiment of this invention. FIG. 6B is an enlarged cross-sectional view taken along line F6B-F6B in FIG.

  Hereinafter, a first embodiment of the present invention will be described in detail with reference to FIGS.

  Reference numerals 1 in FIGS. 1A and 1B denote the light emitting device according to the first embodiment. The light emitting device 1 is used as, for example, a planar light source of a lighting fixture. As shown in FIG. 1B, the light emitting device 1 includes a device substrate 2, a plurality of component mounting portions 4, a plurality of pads 8, and a pair. Terminal portions 11 and 12, a plurality of semiconductor light emitting elements such as a light emitting diode 14 (hereinafter abbreviated as LED 14), a die bonding material 15, a first bonding wire 16, a second bonding wire 17, and a frame member 18. The sealing member 19 is provided.

  The device substrate 2 is a rigid substrate, and is made of an electrical insulating material, for example, a single-layer synthetic resin, specifically, a glass epoxy resin. The shape of the device substrate 2 is, for example, a square shape, specifically, a long rectangle. The surface portion of the device substrate 2 is referred to as a substrate front side portion 2a. This substrate front side portion 2a is naturally made of an insulating material because the entire device substrate 2 is made of an insulating material.

  Each component mounting portion 4 is disposed on the substrate front side portion 2a. In this case, as illustrated in FIG. 1A, the component mounting portions 4 are arranged in a predetermined interval in the vertical and horizontal directions of the device substrate 2 and are arranged in a matrix. Without being restricted thereto, the form of arrangement on the substrate front side portion 2a can be variously changed. In the first embodiment, the shape of each component mounting portion 4 is a quadrangle, and the individual areas of these component mounting portions 4 are capable of diffusing heat transmitted from the LED 14 described later and releasing it to the device substrate 2. It is larger than the front view shape of the LED 14.

  These component mounting portions 4 are formed of a base layer 5 and a surface layer 6 laminated on the base layer 5 as shown in FIGS. The underlayer 5 is made of Cu, and the surface layer 6 is made of a metal different from the metal forming the pad surface layer 10 described later, specifically, Al in the present embodiment. As described above, each component mounting portion 4 is made of two metal layers using Cu and Al, which do not contain Ag or Au having a high material cost and have a low material cost. These component mounting portions 4 are laminated on the substrate front side portion 2a by bonding the back surface of the base layer 5 to the substrate front side portion 2a.

  The surface layer 6 of these component mounting parts 4 forms a mounting front part. The surface 6a of the surface layer 6 functions as a light reflection surface, but is not a mirror surface but a diffuse reflection surface having a rougher surface roughness than the mirror surface. For this purpose, for example, the surface of the surface layer 6 is used as it is.

  The pads 8 are for bonding, and are alternately arranged with respect to the component mounting portions 4 as shown in FIG. 1A and provided on the substrate front side portion 2 a of the device substrate 2. These pads 8 have, for example, a quadrangle, and the size thereof is smaller than the substrate front side portion 2a. As shown in FIGS. 1B and 2, each pad 8 is formed of a pad base layer 9 and a pad surface layer 10 laminated on the base layer. The pad base layer 9 is made of Cu, and the pad surface layer 10 is made of Au. Thus, each pad 8 is made of two metal layers. These pads 8 are laminated on the substrate front side portion 2a by bonding the back surface of the pad base layer 9 to the substrate front side portion 2a. The fact that each pad surface layer 10 is made of Au has good light extraction performance due to light reflection performance on this surface, and high reliability in bonding with a bonding wire bonded to the pad surface layer 10 by wire bonding described later. It is preferable in that it can be secured.

  For example, as shown in FIG. 1A, the component mounting portions 4 and the pads 8 are alternately arranged in a folded manner at one end portion in the longitudinal direction of the device substrate 2, and on the extension of both ends of the row. Positioned, the terminal portions 11 and 12 are provided on the substrate front side portion 2a. These terminal portions 11 and 12 have a rectangular shape, and are formed of a Cu terminal portion base layer and an Au terminal portion surface layer laminated on the base layer, as in the case of each pad 8, although not shown. Then, the back surface of the terminal portion base layer is bonded to the substrate front side portion 2a and laminated on the substrate front side portion 2a.

  Each LED 14 is a single-sided electrode type chip LED. These LEDs 14 have a light emitting layer 14b on one surface in the thickness direction of the element substrate 14a as shown in FIGS. 1B and 2, and a pair of element electrodes 14c and 14d are provided on the light emitting layer 14b side. The formed bare chip is smaller than the component mounting portion 4 and the pad 8. The element substrate 14a is made of a translucent insulating material such as sapphire. The light emitting layer 14b is made of a semiconductor that emits blue light, for example, in accordance with power feeding to the device electrodes 14c and 14d. Therefore, each LED 14 is a chip-like blue LED that emits blue light. One of the device electrodes 14c and 14d is the anode side, and the other is the cathode side.

  As shown in FIGS. 1B and 2, each LED 14 is mounted on the component mounting portion 4 by bonding (fixing) the other surface in the thickness direction of the element substrate 14 a to the surface layer 6 with the die bond material 15. Has been. The die bond material 15 is made of a translucent material and made of, for example, a transparent silicone resin.

  Each of the first bonding wire 16 and the second bonding wire 17 is made of a fine metal wire, preferably a fine Au wire. The first bonding wire 16 and the second bonding wire 17 are provided by electrically connecting the pad 8 and the element electrode of the LED 14 on the component mounting portion 4 adjacent to the pad 8. And the terminal portions 11 and 12 are electrically connected. Thereby, each LED14 is connected in series.

  For this purpose, the first bonding wire 16 is provided with one end bonded to, for example, one element electrode 14c by ball bonding and the other end bonded to the pad 8 or the terminal portion 11 by wedge bonding. Similarly, the second bonding wire 17 is provided with one end bonded to, for example, the other element electrode 14d by ball bonding and the other end bonded to the pad 8 or the terminal portion 12 by wedge bonding.

  The frame member 18 has a frame shape corresponding to the shape of the device substrate 2 and is shorter than the device substrate 2. The frame member 18 accommodates each pad 8 and each LED 14 and is fixed to the device substrate 2. As shown in FIG. 1A, one end portions of the pair of terminal portions 11 and 12 protrude to the outside of the frame member 18, and the protruding portion extends from a power supply device (not shown). A covered electric wire (not shown) is soldered.

  The sealing member 19 is filled in the frame member 18, and the component mounting portion 4, the pad 8, the LED 14, the first bonding wire 16, and the second bonding wire 17 are filled and sealed. It has been. The sealing member 19 is translucent, and for example, a transparent silicone resin is used. In the sealing member 19, a powdery phosphor (not shown) is mixed in order to obtain white light. Since this LED 14 emits blue light, a yellow phosphor that is excited by this light and emits yellow light is used as this phosphor. In addition, in order to improve color rendering properties, it is also possible to add a red phosphor and a green phosphor.

  Next, the manufacturing method of the part except the frame member 18 and the sealing member 19 of the light-emitting device 1 of the above structure is demonstrated with reference to FIG.

  In the first step shown in FIG. 3 (A), the clad material C formed by laminating the aluminum plate C1 and the copper plate C2 and passing between the rolling rollers, and the copper plate C2 made of glass epoxy resin. Adhering to the substrate 2, the device substrate 2 is laminated.

  In the second step shown in FIG. 3B, a photosensitive etching resist E1 is applied on the aluminum plate C1 of the clad material C.

  In the third step shown in FIG. 3C, the etching resist E1 is exposed to remove unnecessary regions of the etching resist E1. Here, the region to be removed is a region other than the planned regions of the component mounting portions 4, the pads 8, and the terminal portions 11 and 12. By obtaining this process, the etching resist E1 is formed on the planned regions. Remains. Such a remaining portion of the etching resist E1 is referred to as a mask M1.

  The fourth step shown in FIG. 3D is a first etching step, and a portion of the metal not covered with the mask M1 is removed with an etching solution.

  In the fifth step shown in FIG. 3E, the mask M1 is removed. Thereby, the laminated body of the copper plate C2 and the aluminum plate C1 remains in the scheduled area | region of the component mounting part 4, each pad 8, and the terminal parts 11 and 12. FIG.

  In the sixth step shown in FIG. 3F, a photosensitive etching resist E2 is applied.

  In the seventh step shown in FIG. 3G, the etching resist E2 is exposed to remove unnecessary regions of the etching resist E2. Here, the region to be removed is a region other than the planned region of each component mounting unit 4, and the etching resist E <b> 2 remains only on the planned region of each component mounting unit 4 by obtaining this process. Such a remaining portion of the etching resist E2 is referred to as a mask M2. At the same time, the etching resist E2 is removed in the predetermined regions of the pads 8 and the terminal portions 11 and 12, so that the same aluminum plate C1 is exposed.

  The eighth step shown in FIG. 3 (H) is the second etching step, and the exposed aluminum plate C1 is removed from the portion not covered with the mask M2 with the etching solution. In addition, this removal is only the aluminum plate C1, the copper plate C2 is not removed, and this copper plate C2 is exposed by obtaining the eighth step. The exposed copper plate C2 is used as a pad base layer 9 that forms the base of the A metal to be plated in the next step and the terminal part base layer of the terminal parts 11 and 12.

  The ninth step shown in FIG. 3I is a step of plating Au. Thereby, Au is laminated | stacked by plating on the copper plate C2 exposed in the scheduled area | region of each pad 8 and the terminal parts 11 and 12. FIG. In other words, the pad surface layer 10 made of Au is laminated on the pad base layer 9 to form each pad 8, and the terminal portion surface layer 10 made of Au is laminated on the terminal portion base layer to form the terminal portions 11, 12. Is formed.

  In the tenth step shown in FIG. 3 (J), the mask M2 covering the planned area of each component mounting portion 4 is removed, and the aluminum plate C1 of each component mounting portion 4 is exposed. Thereby, each component mounting part 4 in which the surface layer 6 made of Al is laminated on the base layer 5 made of Cu is formed.

  In the eleventh step shown in FIG. 3 (K), the LEDs 14 are mounted on the component mounting portions 4 using the die bonding material 15 and these LEDs 14 are connected in series by wire bonding.

  After this, after fixing the frame member 18 on the device substrate 2, the sealing member 19 is filled in the frame member 18, and the step of heating and solidifying it is obtained, whereby the light emitting device 1 is manufactured. .

    According to such a manufacturing method, the component mounting portions 4 and the pads 8 and the pair of terminal portions 11 and 12 that are alternately disposed using the clad material C of Al and Cu can be formed.

  The light-emitting device 1 having the above-described configuration is such that the back surface (the lower surface in FIGS. 1B and 2) of the device substrate 2 is brought into contact with a ceiling-mounted appliance body (not shown) and the sealing member 19 faces downward. It is mounted on the instrument body and used as a planar light source. When the light emitting device 1 is energized, the LEDs 14 emit light all at once, so that the lower part can be illuminated with white light. That is, the blue light emitted from the light emitting layer 14b of the LED 14 and the yellow light generated by exciting a phosphor with a part of this light are mixed to form white light for downward illumination. Is done.

  In such illumination, the light-emitting layer 14b of the LED 14 emits blue light toward the element substrate 14a on the back side of the light-emitting layer 14b in addition to the light usage direction. The light emitted to the back side in this way is incident on the surface layer 6 of the component mounting portion 4 through the light-transmitting element substrate 14a and the die bonding material 15, and is reflected by the surface layer 6 in the light utilization direction. . In this case, since the surface layer 6 is made of Al, incident light on the surface layer can be efficiently reflected in the light utilization direction as compared with the case where the surface layer is made of Au.

  That is, since the surface roughness of the Al surface layer 6 is rougher than the mirror surface, reflection of the LED 14 on the surface layer 6 when viewed from the front side of the light emitting device 1 is incident on the projection region at a right angle from the light emitting layer 14b. Even the reflected light is diffusely reflected, and regular reflection can be reduced. For this reason, the reflected light of the light emitted from the light emitting portion located directly behind the pair of element electrodes 14c and 14d in the light emitting layer 14b and incident at right angles to the projection region of the surface layer 6 is blocked by the element electrodes 14c and 14d. It becomes difficult. In this way, since part of the light reflected by the projection area of the LED 14 with respect to the component mounting portion 4 when viewed from the front side of the light emitting device 1 is difficult to be blocked by the element electrodes 14c and 14d, the light extraction efficiency can be improved.

  Moreover, since the component mounting portion 4 is formed of a clad material composed of an Al surface layer 6 and a Cu underlayer 5, the surface of the surface layer 6 becomes rougher than the mirror surface due to the manufacturing process of the clad material. Yes. For this reason, costs can be reduced as the surface layer 6 that diffusely reflects incident light can be obtained without requiring special processing.

  In addition, the component mounting portion 4 of the light emitting device 1 having the above configuration is formed of a metal layer that does not contain Ag or Au. Moreover, the surface layer 6 of the component mounting portion 4 is made of Al whose material cost is lower than Ag or Au. Therefore, since the cost of the component mounting part 4 can be reduced, the cost of the light emitting device 1 can be reduced accordingly.

  Further, in the light emitting device 1 having the above configuration, since the surface roughness of the surface layer 6 of the component mounting portion 4 is rougher than the mirror surface, the adhesion strength of the die bond material 15 to the surface layer 6 is increased. Accordingly, the bonding area of the chip-shaped LED 14 to the component mounting portion 4 is substantially equal to the projected area, and the bonding strength of the LED 14 to the component mounting portion 4 can be improved even though the area is small.

  A second embodiment of the present invention will be described with reference to FIGS. The second embodiment is different from the first embodiment in the configuration of the component mounting portion 4 and the pad 8, and the other configurations are the same as those in the first embodiment including the configurations not shown in FIGS. 4 and 5. For this reason, about the same structure as 1st Embodiment, the code | symbol same as 1st Embodiment is attached | subjected and the description is abbreviate | omitted.

  In the second embodiment, each component mounting portion 4 and each pad 8 are each formed of an Al single layer.

  The portions of the light emitting device 1 of the second embodiment excluding the frame member and the sealing member 19 (not shown) are manufactured by sequentially obtaining the manufacturing steps shown in FIGS.

  That is, in the first step shown in FIG. 5A, the aluminum plate C1 is laminated on the device substrate 2 made of glass epoxy resin.

  In the second step shown in FIG. 5B, a photosensitive etching resist E1 is applied on the aluminum plate C1.

  In the third step shown in FIG. 5C, the etching resist E1 is exposed to remove unnecessary regions of the etching resist E1. Here, the region to be removed is a region other than the planned regions of the component mounting portions 4, the pads 8, and the terminal portions 11 and 12. By obtaining this process, the etching resist E1 is formed on the planned regions. Remains. Such a remaining portion of the etching resist E1 is referred to as a mask M.

  The fourth step shown in FIG. 5D is an etching step, and a portion of the aluminum plate C1 that is not covered with the mask M is removed with an etching solution.

  In the fifth step shown in FIG. 5E, the mask is removed. Thereby, the component mounting part 4 which consists of a single layer of the aluminum plate C1, each pad 8, and a pair of terminal part which is not shown in figure remain in the exposed state.

  In the sixth step shown in FIG. 5 (F), the LEDs 14 are mounted on the component mounting portions 4 by using the die bonding material 15, and these LEDs 14 are connected in series by wire bonding. The bonding wires 16 and 17 used in the wire bonding and the pair of device electrodes (not shown) of the LED 14 are preferably made of aluminum in order to increase the bonding strength.

  After this, after fixing a frame member (not shown) on the device substrate 2, the sealing member 19 is filled in the frame member, and the light emitting device 1 is manufactured by obtaining a step of heating and solidifying it. .

  According to such a manufacturing method, since each of the component mounting portion 4, each pad 8, and a terminal portion (not shown) is made of a single layer of aluminum, in addition to the small number of steps compared to the first embodiment, Since the Au layer is not used for the pad 8 and a pair of terminal portions (not shown), it can be manufactured at a lower cost.

  The configuration of the light emitting device 1 of the second embodiment other than the matters described above is the same as that of the first embodiment, including configurations not shown in FIGS. 4 and 5. Therefore, the light emitting device 1 of the second embodiment can also solve the problems of the present invention for the same reason as already explained in the first embodiment.

  Briefly, the light emitting device 1 according to the second embodiment has a component mounting portion 4 and a terminal portion (not shown) made of a metal that does not contain Ag or Au, specifically made of Al. As the material costs of 11 and 12 can be reduced, it is advantageous in reducing the cost of the entire apparatus. At the same time, the light incident on the aluminum component mounting portion 4 from the single-sided electrode type LED 14 can be diffusely reflected on the surface of the component mounting portion 4 rougher than the mirror surface, so that part of the reflected light is reflected by the LED 14. Can be prevented from being blocked by the pair of element electrodes 14c and 14d, and the light extraction efficiency can be improved. Furthermore, as the surface roughness of the aluminum component mounting portion 4 is increased, the fixing strength of the LED 14 to the component mounting portion 4 through the die bond material 15 can be improved.

  In the second embodiment, each of the component mounting portion 4, each pad 8, and a terminal portion (not shown) is made of a single aluminum layer, but may be formed of a single copper layer instead. In this case, the bonding wires 16 and 17 and the element electrodes 14c and 14d of the LED 14 are preferably made of aluminum in order to increase the bonding strength. Even in such a configuration, the problem of the present invention can be solved.

  6A and 6B show a third embodiment of the present invention. In the following description of the third embodiment, the same components as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and the description thereof is omitted.

  In the third embodiment, each of the plurality of component mounting portions 4 provided on the device substrate 2 is formed by integrally and continuously forming the component mounting portion region 4a and the pad region 8a. Therefore, as shown in FIG. 6B, the component mounting portion 4 having the pad region 8a is composed of a Cu base layer 5 and an Al surface layer 6 that is stacked on the base layer 5 to form a mounting front portion. It is formed in two layers.

  At the same time, the end part mounting part 21 arranged at one end of the column of pseudonym of the part mounting parts 4 group arranged in a predetermined arrangement forms the part mounting part region 4a and one terminal part 12 integrally and continuously. Has been. Therefore, the end component mounting portion 21 having the terminal portion 12 is also composed of the Cu base layer 5 and the Al surface layer 6 laminated on this and forming the mounting front portion, like the component mounting portion 4. It is formed in two layers.

  The remaining terminal portion 11 is provided adjacent to the component mounting portion 4 disposed at the other end of the row. Similar to the component mounting portion 4, the terminal portion 11 is formed in two layers of a Cu base layer 5 and an Al surface layer 6 laminated thereon.

  Further, in the third embodiment, as shown in FIG. 6A, the first bonding wire 16 is adjacent to one element electrode 14c of the LED 14 and the component mounting portion 4 on which the LED 14 is mounted. For example, the pad region 8a of the component mounting portion 4 or the terminal portion 11 is electrically connected and wire-bonded. Similarly, the second bonding wire 17 electrically connects the other element electrode 14d of the LED 14 and the component mounting portion 4 on which the LED 14 is mounted to, for example, the component mounting portion region 4a of the component mounting portion 4. And wire bonding. The same applies to the end part mounting part 21.

  Therefore, each component mounting portion 4 and the end component mounting portion 21 having the component mounting portion region 4 a are given a potential along with the power supply to the light emitting device 1.

  The configuration of the light emitting device 1 of the third embodiment other than the matters described above is the same as that of the first embodiment. Therefore, the light emitting device 1 of the third embodiment can also solve the problems of the present invention for the same reason as already explained in the first embodiment.

  Briefly, the light emitting device 1 according to the third embodiment includes the component mounting area 4 a and the pad area 8 a of each component mounting section 4 and the end component mounting section 21, and the component mounting section area of the end component mounting section 21. 4a, the terminal portion 12, and the terminal portion 11 are made of a metal that does not contain Ag or Au, specifically, Al. For this reason, it is advantageous in reducing the cost of the entire apparatus as the material cost of the component mounting portion 4 and the end component mounting portion 21 having the component mounting portion region 4a and the terminal portions 11 and 12 can be reduced. At the same time, the light incident from the single-sided electrode type LED 14 on the component mounting portion region 4a whose surface layer 6 is made of aluminum can be diffusely reflected on the surface of the surface layer 6 whose surface roughness is rougher than the mirror surface. As a part of the LED can be prevented from being blocked by the pair of element electrodes 14c and 14d of the LED 14, the light extraction efficiency can be improved. Further, as the surface roughness of the aluminum surface layer 6 is increased, the fixing strength of the LED 14 to the component mounting portion 4 and the end component mounting portion 21 through the die bonding material 15 can be improved.

  Further, in the light emitting device 1 of the third embodiment, during the energization, a potential is applied to the metal conductors that are close to each other, that is, each component mounting portion 4, end component mounting portion 21, and terminal portion 11. . However, each of these metal conductors is formed of a clad material of Cu and Al and does not include an Ag layer. For this reason, it can be used without fear of causing silver migration between adjacent core metal conductors, and it is preferable for promoting miniaturization of the light emitting device 1 by arranging the metal conductors at high density.

  DESCRIPTION OF SYMBOLS 1 ... Light-emitting device, 2 ... Device board | substrate, 2a ... Base | substrate front side part, 4 ... Component mounting part, 5 ... Underlayer, 6 ... Surface layer (mounting front part), 8 ... Pad, 9 ... Pad base layer, 10 ... Pad Surface layer (pad front surface portion) 14 ... LED (semiconductor light emitting device), 14a ... device substrate, 14b ... light emitting layer, 14c, 14d ... device electrode, 15 ... die bonding material, 16 ... first bonding wire, 17 ... second Bonding wire, C ... clad material, C1 ... aluminum plate, C2 ... copper plate, 4a ... component mounting area, 8a ... pad area

Claims (4)

An apparatus substrate having at least a front portion of the substrate made of an insulating material;
A component mounting portion formed of a metal layer and disposed on the front side portion of the substrate, wherein at least the mounting front portion is made of Al, and the surface roughness of the mounting front portion is formed to be rougher than the mirror surface;
The light-transmitting element substrate has a light-emitting layer on one surface in the thickness direction, a pair of element electrodes on the light-emitting layer side, and a light-transmitting die bond material is used to attach the other surface in the thickness direction of the element substrate. A plurality of single-sided electrode type semiconductor light emitting elements each fixed to the mounting front part and mounted on each component mounting part;
A light emitting device comprising: An apparatus substrate having at least a front portion of the substrate made of an insulating material;
A component mounting portion formed of a metal layer and disposed on the front side portion of the substrate, wherein at least the mounting front portion is made of Al, and the surface roughness of the mounting front portion is formed to be rougher than the mirror surface;
The light-transmitting element substrate has a light-emitting layer on one surface in the thickness direction, a pair of element electrodes on the light-emitting layer side, and a light-transmitting die bond material is used to attach the other surface in the thickness direction of the element substrate. A plurality of single-sided electrode type semiconductor light emitting elements each fixed to the mounting front part and mounted on each component mounting part;
A plurality of pads which are alternately arranged on the substrate front side portion of the device substrate and are arranged with the respective component mounting portions, and at least the pad front side portion is made of Au, Al or Cu;
A bonding wire provided by electrically connecting the pad and an element electrode of the semiconductor light emitting element on the component mounting portion adjacent to the pad;
A light emitting device comprising: An apparatus substrate having at least a front portion of the substrate made of an insulating material;
A component mounting portion formed of a metal layer and disposed on the front side portion of the substrate, wherein at least the mounting front portion is made of Al, and the surface roughness of the mounting front portion is formed to be rougher than the mirror surface;
The light-transmitting element substrate has a light-emitting layer on one surface in the thickness direction, a pair of element electrodes on the light-emitting layer side, and a light-transmitting die bond material is used to attach the other surface in the thickness direction of the element substrate. A plurality of single-sided electrode type semiconductor light emitting elements each fixed to the mounting front part and mounted on each component mounting part;
A first bonding wire electrically connecting one element electrode of the semiconductor light emitting element and the component mounting portion on which the light emitting element having the electrode is mounted;
A second part provided by electrically connecting the component mounting part on which the semiconductor light emitting element is mounted and the other element electrode of the semiconductor light emitting element mounted on another component mounting part adjacent thereto. Bonding wires of;
A light emitting device comprising:   The component mounting portion is a clad material composed of an Al surface layer forming the mounting front surface portion and a Cu base layer bonded to the back surface of the surface layer and fixed to the substrate front surface portion. The light-emitting device according to claim 1, wherein the light-emitting device is a light-emitting device.

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