WO2023188534A1 - Semiconductor laser device - Google Patents

Abstract

This semiconductor laser device comprises: at least one laser element that emits a laser beam; a housing part that houses thereinside the at least one laser element; a gas supply part that supplies gas from outside the housing part; and a gas discharge part that discharges the gas inside the housing part to the outside of the housing part. The gas supply part has at least one first intake port through which the gas is supplied from the lower side in the vertical direction toward a space on the laser beam emission side in the periphery of the at least one laser element. The gas discharge part has at least one first discharge port disposed at a position facing the at least one first intake port in the vertical direction.

Description

semiconductor laser equipment

The present disclosure relates to a semiconductor laser device.

In recent years, laser devices have been used to process a variety of products, and there is a demand for improved processing quality. This type of laser device is capable of emitting high-power laser light and has a semiconductor laser element as a light source.

It is known that in laser devices, contaminants adhere to the emission end face of the laser beam and accumulate as deposits due to laser oscillation of the semiconductor laser element. Examples of the pollutant include compounds containing silicon and oxygen as skeletons contained in the atmosphere, and more specifically, siloxane, which is a compound having an Si--O--Si bond. The accumulation of deposits derived from contaminants (hereinafter simply referred to as "deposits") on the emission end facet of a semiconductor laser element causes deterioration of the optical characteristics of the laser beam, and furthermore, a decrease in the output characteristics of the laser device (reducing reliability). (decreasing). Since the amount of deposits increases as the operating time of the laser device increases, the optical characteristics of the laser beam deteriorate over time.

Patent Documents 1 to 3 propose techniques for improving the above-mentioned problems with deposits. In particular, Patent Document 3 discloses that a gas is sprayed onto a laser beam emitting end face of a semiconductor laser element to suppress the adhesion of contaminants and further the accumulation of deposits.

Japanese Patent Application Publication No. 2020-155652 Japanese Patent Application Publication No. 2008-270375 International Publication No. 2020/054593

A semiconductor laser device according to one aspect of the present disclosure includes:
at least one laser element that emits laser light;
an accommodating part that accommodates the at least one laser element therein;
a gas supply unit that supplies gas from outside the storage unit;
a gas exhaust part that exhausts gas inside the housing part to the outside of the housing part;
Equipped with
The gas supply unit has at least one first intake port that supplies gas from a vertically lower side toward a space on a laser beam emission side around the at least one laser element,
The gas exhaust section has at least one first exhaust port disposed at a position facing the at least one first intake port in the vertical direction.

FIG. 1 is a perspective view of a semiconductor laser device according to a first embodiment, and is a transparent view showing the inside of the semiconductor laser device. FIG. 2 is a schematic side view showing the inside of the semiconductor laser device according to the first embodiment. FIG. 3 is a schematic side view showing the inside of the semiconductor laser device according to the second embodiment. FIG. 4 is a schematic side view showing the inside of the semiconductor laser device according to the third embodiment. FIG. 5 is a schematic side view showing the inside of the semiconductor laser device according to the fourth embodiment. FIG. 6 is a schematic side view showing the inside of the semiconductor laser device according to the fifth embodiment. FIG. 7 is a schematic plan view showing the inside of the semiconductor laser device according to the fifth embodiment. FIG. 8 is a schematic side view showing the inside of the semiconductor laser device according to the sixth embodiment. FIG. 9 is a schematic side view showing the inside of a semiconductor laser device according to Modification Example 1. FIG. 10 is a schematic side view showing the inside of a semiconductor laser device according to Modification Example 2. FIG. FIG. 11 is a diagram showing the fluid analysis results, and is a graph showing the position dependence of the volume fraction of the blown gas. FIG. 12 is a graph showing the relationship between the volume fraction of the blown gas, the position of the blowing port, and the gas flow rate.

(background)
Hereinafter, the circumstances leading to the present disclosure will be explained in detail. In order to improve the problem of deposits as described above, in Patent Document 3, gas is blown onto the laser beam emitting end face of a semiconductor laser element to suppress the accumulation of deposits.

However, in the space on the laser light emission side (hereinafter referred to as "laser light emission side space"), an upward air current is generated due to heat generation of the semiconductor laser element due to laser oscillation. The blown gas may be blocked by the rising air current and may not be able to exert the desired suppressing effect. Therefore, in order to suppress the accumulation of deposits, a certain amount of spraying is required.

On the other hand, when the amount of gas blown is large, vibrations of the semiconductor laser element and optical components integrated with the semiconductor laser element as a module are induced. Since the semiconductor laser element and the optical component are fixed in position using an adhesive or the like with dimensional precision on the order of micrometers, if a strong gas is blown onto them, their positional relationship will shift from the proper position. As a result, a minute vibration component due to the vibration of the optical component is generated in the characteristics of the laser beam emitted from the semiconductor laser element, and the optical characteristics of the laser beam change.

Furthermore, in the laser device of Patent Document 3, the positional relationship between the exhaust port of the blown gas and the blowing port of the blown gas is not considered. In the laser device of Patent Document 3, contaminants cannot be smoothly exhausted to the outside of the laser device by the blown gas, and the arrangement is such that gas tends to stagnate inside the laser device. There is a high possibility that deposits will accumulate on the semiconductor laser element and other optical components in the laser device due to the retention of this gas.

The inventors conducted fluid analysis regarding the effect of blowing dry gas on a semiconductor laser device having a multi-emitter structure. This fluid analysis was carried out using a semiconductor laser device as a model in which a blowing port was provided above the central part of the space on the laser light output side of the semiconductor laser element. As a result, it was found that the gas diffused from the blowing port, and the volume distribution of the gas became smaller as the distance from the center of the emission end surface increased in the space on the laser light emission side of the semiconductor laser element.

FIG. 11 is a graph showing the fluid analysis results, and shows the position dependence of the volume fraction of the blown gas. The vertical axis in FIG. 11 indicates the volume fraction of the blown gas, and the horizontal axis indicates the position in the arrangement direction of the emitters included in the semiconductor laser element. Note that the center position means the center position of the laser light emitting end face of the semiconductor laser element.

According to FIG. 11, the volume fraction of the gas decreased as it moved away from the center, and the influence of the blown gas was relatively small at the ends. Furthermore, it has been found that the distribution of the volume fraction with respect to the center position becomes asymmetric depending on the position of the exhaust port of the laser device.

From these results, the inventors determined that the volume fraction of the blown gas is determined by the height of the blowing port (i.e., the distance between the laser beam emitting end face and the blowing port), the gas flow rate, and the upward airflow caused by the heat generated by the semiconductor laser element. I thought it would be influenced by.

The inventors systematically analyzed the relationship between the volume fraction of the blown gas, the height of the blowing port, the flow rate of the gas, and the upward airflow caused by the heat generated by the semiconductor laser element, and obtained the results shown in FIG. Ta. FIG. 12 is a graph showing the relationship between the volume fraction of the blown gas, the position of the blowing port, and the gas flow rate. In FIG. 12, for three levels of gas flow rate, the horizontal axis represents the position of the nozzle (height from the laser beam emitting end face), and the vertical axis represents the volume fraction of the blown gas, and the volume fraction with respect to the position of the nozzle is shown. The rate is plotted. Moreover, in FIG. 12, the analysis results are shown by a dashed-dotted line L1, a broken line L2, and a solid line L3 in descending order of gas flow rate.

According to FIG. 12, it was found that the smaller the gas flow rate, the smaller the volume fraction. This is thought to be because the gas flow of the blown gas is overwhelmed by the rising air current, making it difficult for it to reach the laser light emission side space. Furthermore, considering that the volume fraction that prevents the accumulation of deposits is approximately 60% or more, it has been found that a correspondingly large flow rate is required. Furthermore, it has been found that in order to achieve a volume fraction of 60% or more, it is necessary to increase the gas flow rate and to arrange the position of the blowing port within a certain area.

On the other hand, when gas is sprayed at a flow rate that can realize a volume fraction of 60% or more, the above-mentioned fluctuation in the optical characteristics of the laser beam occurs. From this, the inventors discovered that it is important to control the flow rate of the blown gas in consideration of fluctuations in the optical characteristics of the laser beam, rather than simply increasing the flow rate of the blown gas.

In view of the above, the inventors have found that the following (A) and (B) are effective in preventing deposits from accumulating on the laser light emitting end face of a semiconductor laser element.
(A) The gas flow of the blown gas is not obstructed by the upward airflow caused by the heat generation of the laser element. (B) Straighten the gas so that it flows smoothly from the blowing port to the exhaust port.

An object of the present disclosure is to provide a highly reliable semiconductor laser device that can suppress the accumulation of deposits derived from contaminants without deteriorating the optical characteristics of laser light.

Hereinafter, each embodiment and modification example of the present disclosure will be described with reference to the drawings. Note that each of the embodiments and modified examples described below are specific examples of the present disclosure. Therefore, the numerical values, shapes, materials, components, arrangement positions and connection forms of the components shown in the following embodiments and modified examples are merely examples and are not intended to limit the present disclosure. do not have. Moreover, each figure is a diagram schematically shown and is not necessarily strictly illustrated. Therefore, the scale etc. in each figure are not necessarily the same. In each figure, substantially the same components are designated by the same reference numerals, and overlapping explanations will be omitted or simplified.

In this specification, description will be made using a right-handed coordinate system in which the vertically upward direction is the positive side in the Z-axis direction, and the laser beam emission direction is the positive side in the X-axis direction.

(First embodiment)
FIG. 1 is a perspective view of a semiconductor laser device 100 according to a first embodiment, and shows the inside of the semiconductor laser device 100 as seen through. FIG. 2 is a schematic side view showing the inside of the semiconductor laser device 100. The thick black arrows in FIG. 2 indicate rising air currents due to heat generation in each element or component, and the white arrows indicate the flow of supply gas or exhaust gas. In addition, in the following description, the rising air current accompanying heat generation of each element or component may be simply referred to as "rising air current."

The semiconductor laser device 100 is, for example, an external resonance type laser processing device that combines a plurality of laser beams 1 and outputs the synthesized laser beams to the outside. The semiconductor laser device 100 includes a housing section 110, a laser module 101, an optical component 104, a gas supply section 120, and a gas exhaust section 130.

The housing section 110 is a hollow body that houses the laser element 102 and the optical component 104, and is, for example, a housing. The internal space of the housing part 110 is surrounded by four side surfaces including a side surface 111 on the positive side in the Y-axis direction along the ZX plane (a vertical plane along the traveling direction of the laser beam 1), a top surface 112, and a bottom surface 113. There is. A mounting board on which the laser element 102 and the optical component 104 are mounted is arranged on the side surface 111.

Although details will be described later, the bottom surface 113 is provided with a first intake port 121 and a second intake port 122, and the top surface 112 is provided with a first exhaust port 131 and a second exhaust port 132. The semiconductor laser device 100 is used in a state where a line connecting opposing intake ports and exhaust ports is arranged along the Z-axis direction.

The internal space of the accommodating part 110 is, for example, filled with the atmosphere and contains at least one of oxygen, hydrogen, nitrogen, argon, and halogen gas. Note that the internal space may be filled with dry air from which moisture has been removed from the atmosphere.

The laser module 101 includes a semiconductor laser element (hereinafter sometimes simply referred to as a "laser element") 102, an optical component within the module 103, and the like.

The laser element 102 is, for example, a semiconductor laser array in which a plurality of emitters are formed. Laser light 1 is emitted from each emitter. In this embodiment, the laser element 102 is a nitride-based semiconductor laser element, and emits laser light in a wavelength band of 500 nm or less (from blue to ultraviolet band).

The in-module optical component 103 is arranged on the emission side of the laser beam 1 of the laser element 102, and is connected to the laser element 102 via a block or adhesive (not shown). The in-module optical component 103 has the functions of collimating the laser beam 1 into parallel light, rotating the cross-sectional shape of the laser beam 1 in a plane perpendicular to the propagation direction of the laser beam 1, and separating the laser beams. An optical component having at least one of the following. The intra-module optical component 103 is, for example, a beam twister unit composed of a plurality of lenses.

Further, although not shown, the laser module 101 includes a base material on which the laser element 102 is mounted, a plurality of electrodes for flowing current to the semiconductor laser element 102, a cooling block for cooling the laser element 102, and the like. .

The optical component 104 is a component into which the plurality of laser beams 1 emitted from the laser module 101 enter during the process of being emitted to the outside of the semiconductor laser device 100. The optical component 104 is a component with high energy density, such as an external resonant mirror. The external resonant mirror is a component onto which the laser beam 1 after being focused on the diffraction grating is incident. Although only the optical component 104 is shown as an optical component in FIGS. 1 and 2, in the semiconductor laser device 100, apart from the optical component 104, there is another optical component that emits more laser light 1 than the optical component 104. It may be arranged on the upstream side in the traveling direction. For example, the other optical component is a diffraction grating or the like.

The gas supply unit 120 has a first intake port 121 and a second intake port 122, and jets gas vertically upward (positive side in the Z-axis direction) toward a specific portion inside the storage unit 110. A gas supply pump is connected to the first intake port 121 and the second intake port 122, for example, via piping, and the gas sent out from the gas supply pump flows through the first intake port 121 and the second intake port 122. The liquid is supplied to the inside of the housing section 110 through the medium.

The gas to be supplied (hereinafter sometimes referred to as "supply gas") is, for example, dry air from which moisture has been removed from the atmosphere, that is, a gas containing nitrogen and oxygen. The supply gas may be any gas containing at least one of nitrogen, hydrogen, helium, argon, halogen gas, and halogen compound gas in addition to oxygen.

In this embodiment, two first intake ports 121 are arranged on the bottom surface 113 of the housing section 110, corresponding to the laser element 102 and the optical component 103 in the module, respectively. Specifically, the first intake ports 121 are provided in the bottom surface 113 of the housing part 110 in the area below the laser beam emission side space of the laser element 102 and the laser beam emission side space of the intra-module optical component 103 in the vertical direction, respectively. Partially provided. Therefore, gas is supplied from the lower side in the vertical direction toward the laser beam output side space of the laser element 102 and the laser beam output side space of the intra-module optical component 103. Note that "partially provided" means that the intake port is provided as a hole with a relatively narrow area. Furthermore, in the following description, the laser beam emitting side space may be simply referred to as "emitting side space."

In this embodiment, two second air intake ports 122 are arranged on the bottom surface 113 of the housing portion 110 in correspondence with the optical components 104. Specifically, on the bottom surface 113 of the accommodating portion 110 , they are partially provided in regions below the laser beam incident side space and the laser beam output side space of the optical component 104 in the vertical direction. Therefore, gas is supplied from the vertically lower side toward the laser light incident side space and the laser light output side space of the optical component 104. Note that in the following description, the space on the laser beam incidence side may be simply referred to as the "incidence side space."

The gas exhaust section 130 has a first exhaust port 131 and a second exhaust port 132, and exhausts the gas inside the housing section 110. For example, piping is connected to the first exhaust port 131 and the second exhaust port 132. Note that a configuration may be adopted in which a gas exhaust pump is connected to the piping to forcibly suck up the gas in the housing section 110.

In this embodiment, two first exhaust ports 131 are arranged on the top surface 112 of the housing section 110. Specifically, the first exhaust port 131 is provided at a position facing the first intake port 121 in the Z-axis direction. More specifically, one first exhaust port 131 is provided so as to be connected to the opposing first intake port 121 in a straight line via the emission side space of the laser element 102 . Further, the other first exhaust port 131 is provided so as to be connected to the opposing first intake port 121 in a straight line via the exit side space of the optical component 103 in the module.

In this embodiment, two second exhaust ports 132 are arranged on the top surface 112 of the housing section 110. Specifically, the second exhaust port 132 is provided at a position facing the second intake port 122 in the Z-axis direction. More specifically, one second exhaust port 132 is provided so as to be connected to the opposing second intake port 122 in a straight line via the incident side space of the optical component 104 . The other second exhaust port 132 is provided so as to be connected to the opposing second intake port 122 in a straight line via the exit side space of the optical component 104 .

<Gas rectification>
Contaminants contained in the gas in the internal space are decomposed by the laser beam 1, and the contaminants are distributed to the emission end face 102a of the laser element 102, the input end face and the output end face of the optical component 103 and the optical component 104 in the module. It adheres to the surface, undergoes a chemical change, and is deposited as a deposit. The contaminant is, for example, siloxane, and the deposit is, for example, a Si organic compound or a hydrocarbon compound.

In addition, rising air currents are generated as each element and component generates heat at positions corresponding to the emission side space of the laser element 102, the in-module optical component 103, and the incident side space and output side space of the optical component 104, respectively. .

In the semiconductor laser device 100 according to the present embodiment, the gas introduced into the housing section 110 to suppress the accumulation of deposits is exhausted to the outside of the housing section 110 so as not to be obstructed by the upward air current. ing.

Specifically, the intake ports 121, 122 and the exhaust ports 131, 132 are arranged to face each other in the vertical direction. Therefore, when the gas introduced by the gas supply section 120 passes through the emission side space of the laser element 102, the gas is smoothly exhausted from the exhaust port without being hindered by the rising air current. Therefore, deposition of deposits can be effectively suppressed.

Note that the second intake port 122 and the second exhaust port 132 may be provided at a position on the bottom surface 113 and the top surface 112 that corresponds to at least one of the entrance side space and the exit side space of the optical component 104. For example, the second intake port 122 and the second exhaust port 132 are provided on the vertically lower side and the vertically upper side, respectively, of the end face side space where deposits tend to accumulate, of the incident end face and the output end face of the optical component 104. It's okay.

As described above, according to the first embodiment, the semiconductor laser device 100 includes the laser element 102 that emits the laser beam 1, the accommodating part 110 that accommodates the laser element 102, and the It includes a gas supply section 120 that supplies gas, and a gas exhaust section 130 that exhausts gas inside the accommodation section 110 to the outside of the accommodation section 110. The gas supply unit 120 has a first intake port 121 that supplies gas from the lower side in the vertical direction toward the space around the laser element 102 on the emission side of the laser beam 1 . The gas exhaust section 130 has a first exhaust port 131 located at a position facing the first intake port 121 in the vertical direction.

Therefore, the gas supplied from the vertically lower side to the emission side space of the laser element 102 via the first intake port 121 flows in a substantially straight line along the vertical direction to the first exhaust port 131 and is exhausted. The gas flow is not obstructed by the rising air current caused by the heat generated by the gas 102.

Therefore, even if contaminants are generated in the space on the side of the laser beam emitting end face of the laser element 102, they are carried by the gas flow and are smoothly exhausted, so that the accumulation of deposits on the emitting end face 102a of the laser element 102 can be effectively prevented. Can be suppressed.

Furthermore, since there is no need to blow gas more strongly than necessary, the laser module and optical components will not vibrate due to the gas flow.

Therefore, the accumulation of deposits can be suppressed without deteriorating the optical characteristics of the laser beam 1, and the reliability of the semiconductor laser device 100 is significantly improved.

The first intake port 121 and the first exhaust port 131 are provided in the housing portion 110.

Therefore, compared to the case where a gas supply pipe is arranged inside the storage section 110 to supply gas, contaminants can be smoothly exhausted with a simpler configuration.

The first intake port 121 is partially provided in the lower vertical region of the housing portion 110 corresponding to the emission side space of the laser element 102.

Therefore, since the area of the first intake port 121 is small compared to the case where the first intake port 121 is provided with a relatively large area such as a long hole shape extending in the traveling direction of the laser beam 1, the strength during gas supply is reduced. (Gas flow rate) becomes easier to secure above a certain level. Therefore, it is easy to keep contaminants away from the emission side space of the laser element 102. Furthermore, since the gas can be locally supplied to a specific position, it is possible to prevent the supply gas from colliding with each other and causing vibrations in the optical components 103 and the like within the module.

The semiconductor laser device 100 includes an optical component 104 through which the laser beam 1 passes. The gas supply unit 120 has a second intake port 122 that supplies gas toward at least one of the entrance side space and the exit side space of the optical component 104 from the lower side in the vertical direction. Further, the gas exhaust section 130 has a second exhaust port 132 arranged at a position facing the second intake port 122 in the vertical direction.

Therefore, the gas supplied to at least one of the incident side space and the incident side space of the optical component 104 from the vertically lower side via the second intake port 122 flows almost in a straight line along the vertical direction to the second intake port 122. It flows and is exhausted. Further, the gas flow is not obstructed by the rising air current caused by the heat generated by the optical component 104. Therefore, deposition of deposits on the optical component 104 can be suppressed. In addition, not only the contaminants generated around the laser element 102 but also the contaminants generated around the optical component 104 are smoothly exhausted, so that the accumulation of deposits on the emission end face 102a of the laser element 102 can be more effectively eliminated. can be suppressed to

The laser element 102 has a plurality of emitters that emit laser beams 1, and the plurality of laser beams 1 from the plurality of emitters are focused on the optical component 104.

In this way, when the optical component 104 is a diffraction grating or an external resonant mirror on which a plurality of laser beams are focused, the energy density of the laser beam 1 becomes high in the optical component 104, so the amount of heat generated is large, and the optical component Deposits tend to accumulate on the incident end face and the outgoing end face of 104.

Therefore, when the optical component 104 is a diffraction grating or an external resonant mirror, the effect of suppressing the deposition of deposits on the optical component 104 is significant.

In this embodiment, the wavelength of the laser beam 1 is 500 nm or less.

Siloxane is easily decomposed by energy in a wavelength range of 500 nm or less. Therefore, when the laser element 102 emits the laser beam 1 having a wavelength of 500 nm or less, a SiO _x film caused by siloxane is likely to be generated on the emission end face of each element.

Therefore, when the laser element 102 is an element that emits the laser beam 1 having a wavelength of 500 nm or less, the effects of this embodiment are greatly beneficial.

Note that, in the gas supply section 120, instead of the first intake port 121 being provided on the bottom surface 113, a gas supply pipe may be arranged inside the housing section 110, and the first intake port 121 may be provided on the gas supply pipe. good.

In this embodiment, two first intake ports 121 and two second intake ports 122 are each provided, but three or more each may be provided.

Furthermore, one first intake port 121 and one second intake port 122 may be provided. In that case, the first intake port 121 is provided as a relatively large hole in a region of the bottom surface 113 extending from the vertically lower side of the emission side space of the laser element 102 to the vertically lower side of the emission side space of the optical component 103 in the module. You can leave it there.

Further, the second air intake port 122 may be provided as a relatively large hole in a region of the bottom surface 113 extending from the vertically lower side of the incident side space of the optical component 104 to the vertically lower side of the output side space.

Furthermore, the first exhaust port 131 and the second exhaust port 132 are also provided as relatively large holes so as to correspond to the first intake port 121 and the second intake port 122, which are formed as relatively large holes. Good too.

Note that the second intake port 122 and the second exhaust port 132 may be provided not only for the optical component 104 but also for other optical components described above.

(Second embodiment)
Hereinafter, the differences between the second embodiment and the first embodiment will be mainly described. FIG. 3 is a schematic side view showing the inside of a semiconductor laser device 200 according to the second embodiment.

The semiconductor laser device 200 is, for example, an external resonance type laser processing device that combines a plurality of laser beams 1 from a plurality of laser modules 101 and outputs the synthesized laser beams to the outside. The semiconductor laser device 200 includes a plurality of laser modules 101 and a plurality of optical components 105.

Although not shown, a diffraction grating is arranged on the positive side of the optical component 105 in the X-axis direction (downstream side in the traveling direction of the laser beam 1). The diffraction grating is an element on which the laser beam 1 is focused after passing through the optical component 105. Further, components corresponding to the optical component 104 according to the first embodiment, such as an external resonant mirror, are arranged. The external resonant mirror is an element into which the laser beam 1 focused on the diffraction grating is incident.

The laser module 101 has the same laser element as the first embodiment. The plurality of laser modules 101 are arranged along the side surface 111 so as not to overlap in the Z-axis direction and the X-axis direction. In particular, in the X-axis direction, adjacent laser modules 101 are spaced apart from each other by a predetermined distance to allow gas flow to pass therethrough. Therefore, the upward airflow and the flow of gas supplied from the first intake port 121 are less likely to be obstructed by the laser module 101 on the side closer to the top surface 112.

In FIG. 3, the three laser modules 101 are arranged closer to the top surface 112 on the positive side in the X-axis direction. Note that the plurality of laser modules 101 may be arranged closer to the top surface 112 on the negative side in the X-axis direction.

The optical component 105 is placed on the negative side of the diffraction grating in the X-axis direction. The optical component 105 is, for example, a FAC (Fact Axis Collimation) lens that collimates the laser beam 1 in the fast direction.

In FIG. 3, three optical components 105 are provided corresponding to each of the three laser modules 101, and are arranged offset along the side surface 111 so as not to overlap in the Z-axis direction and the X-axis direction. . Similar to the laser module 101, adjacent optical components 105 are spaced apart from each other by a predetermined distance in the X-axis direction so that a gas flow can pass therethrough. Therefore, the upward airflow caused by heat generation of the optical component 105 and the flow of gas supplied from the second intake port 122 are less likely to be obstructed by the optical component 105 on the side closer to the top surface 112.

In this embodiment, three first intake ports 121 are provided on the bottom surface of the housing section 110, corresponding to each of the three laser modules 101. Specifically, the first intake ports 121 are partially provided in the bottom surface 113 of the accommodating portion 110 in a region below the emission side space of the laser module 101 in the vertical direction. Therefore, gas is supplied toward the emission side space of the laser module 101 from the vertically lower side.

In this embodiment, one first intake port 121 is provided for a set of the laser element 102 and the optical component 103 in the module, that is, one laser module 101. The gas supplied from the first intake port 121 is supplied at least toward the emission side space of the corresponding laser element 102 . Note that, similarly to the first embodiment, the first intake port 121 may be provided corresponding to each of the laser element 102 and the in-module optical component 103 that constitute the laser module 101.

In this embodiment, three second air intake ports 122 are arranged on the bottom surface 113 of the housing portion 110, corresponding to each of the three optical components 105. Specifically, the second intake ports 122 are partially provided in the bottom surface 113 of the accommodating portion 110 in a region below the incident side space of the laser module 101 in the vertical direction. Therefore, gas is supplied toward the incident side space of the optical component 105 from the vertically lower side.

In this embodiment, three first exhaust ports 131 are arranged on the top surface 112 of the housing portion 110 in correspondence to the three first intake ports 121. Specifically, the first exhaust ports 131 are provided at positions facing the first intake ports 121 in the Z-axis direction. More specifically, the first exhaust port 131 is provided so as to be connected to the opposing first intake port 121 in a straight line via the emission side space of the laser module 101 .

Therefore, the gas introduced into the accommodation section 110 to suppress the accumulation of deposits passes through the emission side space of each laser module 101 without being obstructed by the rising air current caused by the heat generation of the laser module 101, The air is exhausted to the outside of the section 110.

In this embodiment, three second exhaust ports 132 are arranged on the top surface 112 of the housing section 110 in correspondence with the three second intake ports 122. Specifically, the second exhaust ports 132 are provided at positions facing the second intake ports 122 in the Z-axis direction. More specifically, the second exhaust port 132 is provided so as to be connected to the opposing second intake port 122 in a straight line via the incident side space of the optical component 105 .

Therefore, the gas introduced into the storage section 110 to suppress the accumulation of deposits passes through the incident side space of each optical component 105 without being obstructed by the upward air current caused by the heat generation of the optical component 105, and the gas is contained in the storage section 110. The air is exhausted to the outside of the section 110.

Note that instead of the plurality of first intake ports 121, the gas supply unit 120 may have one first intake port 121 in the shape of a long hole with a relatively large area. The elongated hole-shaped first intake port 121 extends from the emission side space of the most positive side laser module 101 to the emission side space of the most negative side laser module 101 in the X-axis direction (progressing direction of the laser beam 1). It exists.

However, if the first intake port 121 is provided for each laser module 101, it is easier to ensure the strength of the gas at the time of supply above a certain level, and the gas can be locally supplied to a specific position.

Furthermore, the second intake port 122 and the second exhaust port 132 may be provided not only for the optical component 105 but also for optical components such as a diffraction grating and an external resonant mirror. That is, the second intake port 122 may be provided at a position on the bottom surface 113 corresponding to at least one of the entrance side space and the output side space of an optical component such as a diffraction grating and an external resonant mirror. Similarly, the second exhaust port 132 may be provided on the top surface 112 at a position corresponding to at least one of the entrance side space and the exit side space of an optical component such as a diffraction grating and an external resonant mirror.

As described above, according to the second embodiment, the semiconductor laser device 200 includes a plurality of laser modules 101 including laser elements, and the first intake port 121 and the first exhaust port 131 are connected to the plurality of laser modules 101. It is set up accordingly.

Therefore, the gas introduced into the accommodation section 110 to suppress the accumulation of deposits passes through the laser beam emitting side space of each laser module 101 without being obstructed by the upward airflow near each laser module 101, and the gas enters the accommodation section 110. The air is exhausted to the outside of the section 110.

Therefore, in the semiconductor laser device 200 having a plurality of laser modules 101, the accumulation of deposits on each laser module 101 can be suppressed without deteriorating the optical characteristics of the laser beam 1, and the reliability of the semiconductor laser device 200 is improved. Much improved.

Usually, the laser beam 1 emitted from one emitter has energy of about several watts. Semiconductor laser devices for processing are required to output several hundred watts or more of laser light. Therefore, the semiconductor laser device 200 needs to have a plurality of laser modules 101 with a multi-emitter structure and to combine the plurality of laser beams emitted from the plurality of laser modules 101.

According to this embodiment, it is possible to realize a laser device for processing that can suppress the accumulation of deposits on each laser module 101 without degrading the optical characteristics of the laser beam 1.

Moreover, the housing part 110 has a vertical side surface 111 along the traveling direction of the laser beam 1, and the plurality of laser modules 101 are shifted along the side surface 111 so as not to overlap in the vertical direction and in the traveling direction of the laser beam. It is arranged as follows.

Therefore, the flow of gas supplied from each first intake port 121, passing near each laser module 101, and heading toward each first exhaust port 131 is not obstructed by the adjacent laser module 101. Further, after the supply gas passes through the emission side space of the laser module 101 closest to the first intake port 121, it does not go to the emission side space of the laser module 101 closest to the first exhaust port 131. In this way, contaminants can be prevented from being carried into the emission side space of another laser module 101, so that the deposition rate of deposits on the laser module 101 can be further reduced. As a result, deposition of deposits on the laser module 101 can be further suppressed.

Further, the second intake port 122 and the second exhaust port 132 are provided corresponding to the plurality of optical components 105. Therefore, the gas introduced into the housing part 110 to suppress the accumulation of deposits passes through the space on the laser beam incident side of each optical component 105 without being obstructed by the upward airflow near each optical component 105. The air is exhausted to the outside of the housing section 110. Therefore, the accumulation of deposits on each optical component 105 can be further suppressed, and contaminants generated in the vicinity of each optical component 105 can be smoothly exhausted, and the accumulation of deposits on each laser module 101 can be further suppressed. can be suppressed.

Furthermore, in this embodiment, the second intake port 122 and the second exhaust port 132 are arranged corresponding to optical components such as an external resonant mirror and a diffraction grating. These optical components condense a plurality of laser beams 1 emitted from a plurality of laser modules 101, and thus have a high energy density and a large amount of heat generation. That is, contaminants are likely to be generated near the optical component, and deposits are likely to accumulate on the optical component. According to this embodiment, it is possible to suppress the accumulation of deposits on optical components where deposits tend to accumulate, and to smoothly exhaust contaminants generated near the optical components, thereby preventing the accumulation of deposits on each laser module 101. This can be suppressed even more effectively.

Note that when the length of the first intake port 121 and the first exhaust port 131 in the X-axis direction is longer than the length of the laser module 101 in the X-axis direction, the laser module 101 has the first intake port 121 and the first exhaust port It may be arranged on a straight line connecting the mouth 131. In this case, the gas supplied from the first intake port 121 bypasses the laser module 101 and heads toward the first exhaust port 131.

Similarly, when the length of the second intake port 122 and the second exhaust port 132 in the X-axis direction is longer than the length of the optical component 105 in the X-axis direction, the laser module 101 It may be arranged on a straight line connecting the exhaust port 132. In this case, the gas supplied from the second intake port 122 bypasses the optical components 105 and heads toward the second exhaust port 132. Similarly, when the length of the second intake port 122 and the second exhaust port 132 in the X-axis direction is longer than the length of an optical component such as a diffraction grating or an external resonant mirror in the X-axis direction, the optical component is It may be arranged on a straight line connecting the second intake port 122 and the second exhaust port 132.

Further, the laser module 101 may be arranged such that its emission end face faces the negative side (bottom face 113) in the Z-axis direction. In this case, by making the first intake port 121 and the first exhaust port 131 longer than the laser module 101 in the direction perpendicular to the traveling direction of the laser light emitted from the laser module 101 (X-axis direction), the first When the gas supplied from the intake port 121 reaches the vicinity of the emission end face of the laser module 101, it bypasses the laser module 101 and heads toward the first exhaust port 131.

In this way, even if the gas supplied from the intake ports 121 and 122 takes a detour and heads toward the exhaust ports 131 and 132, pollutants can be exhausted. The reason for this is that the intake ports 121 and 122 are formed on the side (lower side) in which gravity acts with respect to the laser module 101, and the exhaust ports 131 and 132 are formed at positions corresponding to the intake ports 121 and 122 in the vertical direction. This is because the supply gas is not hindered by the upward airflow caused by heat generation of the laser module 101.

Further, the laser module 101 may be arranged such that its emission end face is inclined at a predetermined angle with respect to the YZ plane (a vertical plane perpendicular to the traveling direction of the laser beam 1).

In this case as well, by making the first intake port 121 and the first exhaust port 131 longer in the X-axis direction than the length of the projected portion of the laser module 101 with respect to the X-axis, the gas supplied from the first intake port 121 is , when it reaches the vicinity of the emission end face of the laser module 101, it bypasses the laser module 101 and heads toward the first exhaust port 131.

(Third embodiment)
Hereinafter, the third embodiment will mainly be described in terms of its differences from the second embodiment. FIG. 4 is a schematic side view showing the inside of a semiconductor laser device 300 according to the third embodiment.

In the third embodiment, the three laser modules 101 are arranged closer to the top surface 112 on the negative side of the laser beam 1 in the X-axis direction.

Furthermore, in the third embodiment, a gas supply pipe 123 is provided for each of the three laser modules 101.

The gas supply pipe 123 is an auxiliary nozzle that supplies gas into the housing section 110. The gas supply pipe 123 is introduced into the housing section 110 from the side surface 119 of the housing section 110. The side surface 119 is a side surface of the housing part 110 on the negative side in the X-axis direction along the YZ plane (a vertical plane perpendicular to the traveling direction of the laser beam 1). Further, the gas supply pipe 123 extends in the X-axis direction within the housing section 110, and the tip end 124 is directed toward the emission side space of the corresponding laser module 101. A first intake port 125 is provided at the distal end portion 124 of the gas supply pipe 123, and gas is supplied to the emission side space of the corresponding laser module 101 via the first intake port 125.

Note that in the semiconductor laser device 300, a plurality of gas supply pipes 123 do not necessarily have to be provided. For example, the gas supply pipe 123 may have a configuration in which a plurality of tip portions 124 are branched from the pipe main body, and each tip portion 124 may be directed toward the emission side space of the corresponding laser module 101. Further, a plurality of first intake ports 125 may be formed on the circumferential surface of one gas supply pipe 123.

As described above, according to the third embodiment, the gas supply section 120 has the gas supply pipe 123 that introduces gas into the storage section 110, and the first intake port 125 is provided in the gas supply pipe 123. ing.

Furthermore, the plurality of laser modules 101 having the laser elements 102 are arranged so that the higher the vertical direction, the more upstream in the traveling direction of the laser beam 1. Furthermore, the gas supply pipe 123 extends in the traveling direction of the laser beam 1, and the distal end portion 124 of the gas supply pipe 123 is located near the emission side space of the corresponding laser module 101, and the first intake port 125 is provided at the tip portion 124.

That is, a gas supply means separate from the first intake port 121 on the bottom surface 113 of the housing portion 110 is provided. Therefore, the amount of gas supplied to the emission side space of the laser module 101 can be increased, and contaminants can be exhausted more efficiently. Further, the plurality of laser modules 101 and gas supply pipes 123 are arranged so as not to impede the flow of gas passing through the emission side space of the laser module 101 toward the first exhaust port 131 and the upward airflow.

Therefore, contaminants can be more efficiently exhausted to the outside of the storage section 110.

Note that the plurality of gas supply pipes 123 may be introduced into the housing section 110 from a side other than the side surface 119 of the housing section 110, for example, from a side surface opposite to the side surface 111 on which the mounting board is arranged. Alternatively, it may be introduced into the housing section 110 from the side surface 111. In this case, the distal end portion 124 of the gas supply pipe 123 is located on the negative side of the module 101 in the Z-axis direction, and supplies gas to the negative side of the module 101 in the Z-axis direction.

Furthermore, the gas supply pipe 123 may be provided only for one laser module 101. For example, the gas supply pipe 123 may be provided only for the laser module 101 located furthest upstream in the traveling direction of the laser beam 1.

Further, the first intake port 121 may not be provided on the bottom surface 113, and gas may be supplied to the emission side space of each laser module 101 only by the gas supply pipe 123.

Note that the semiconductor laser device 300 may be separately provided with a gas supply pipe that supplies gas toward at least one of the incident side space and the output side space of each optical component 105.

(Fourth embodiment)
Hereinafter, the differences between the fourth embodiment and the second embodiment will be mainly described. FIG. 5 is a schematic side view showing the inside of a semiconductor laser device 400 according to the fourth embodiment.

The accommodating portion 110 according to the present embodiment is a cylindrical body that does not have a top surface 112 and a bottom surface 113 and whose upper and lower parts are all open.

The gas supply section 120 has an intake side hollow body 126, and a first intake port 127 and a second intake port 128 are provided in the upper part of the intake side hollow body 126.

The intake-side hollow body 126 is arranged below the housing part 110 in the vertical direction, and its upper part is fitted into the housing part 110. That is, the lower opening of the housing portion 110 is closed by the upper surface of the intake-side hollow body 126.

Gas supplied from outside the semiconductor laser device 400 flows into the intake-side hollow body 126. The supplied gas is supplied into the housing part 110 via the first intake port 127 and the second intake port 128.

The first intake port 127 extends from the emission side space of the laser module 101 on the most negative side in the X-axis direction to the emission side space of the laser module 101 on the most positive side. Therefore, gas is supplied toward the emission side space of each laser module 101 from the vertically lower side.

Further, the second intake port 128 extends from the entrance side space of the optical component 105 on the most negative side in the X-axis direction to the entrance side space of the optical component 105 on the most positive side. Therefore, gas is supplied toward the incident side space of each optical component 105 from the vertically lower side.

The first intake port 127 and the second intake port 128 are each a slit portion in which a plurality of slits extending in the Y-axis direction are spaced apart in the X-axis direction. Therefore, since the gas is supplied into the housing part 110 through the narrow-area slit, the gas can be supplied to the emission side space of the laser module 101 and the input side space of the optical component 105 with an intensity above a certain level. Can be done.

The gas exhaust section 130 has an exhaust side hollow body 136, and a first exhaust port 137 and a second exhaust port 138 are provided at the lower part of the exhaust side hollow body 136.

The exhaust-side hollow body 136 is arranged above the accommodating part 110 in the vertical direction, and its lower part is fitted into the accommodating part 110. In other words, the lower surface of the exhaust-side hollow body 136 closes the upper opening of the housing portion 110 .

The gas in the housing part 110 is exhausted into the exhaust side hollow body 136 through the first exhaust port 137 and the second exhaust port 138.

The first exhaust port 137 and the second exhaust port 138 are provided in regions facing the first intake port 127 and the second intake port 128, respectively, in the Z-axis direction. More specifically, the first exhaust port 137 extends from the emission side space of the laser module 101 on the most negative side in the X-axis direction to the emission side space of the laser module 101 on the most positive side. Further, the second exhaust port 138 extends from the entrance side space of the optical component 105 on the most negative side in the X-axis direction to the entrance side space of the optical component 105 on the most positive side.

The first exhaust port 137 and the second exhaust port 138 are each a slit portion in which a plurality of slits extending in the Y-axis direction are spaced apart in the X-axis direction.

Note that the first intake port 127 and the second intake port 128 of this embodiment may be disposed between the intake-side hollow body 126 and the accommodating portion 110. Therefore, for example, the housing portion 110 may have a bottom surface, and the first intake port 127 and the second intake port 128 may be provided on the bottom surface. Further, the first exhaust port 137 and the second exhaust port 138 only need to be arranged between the exhaust side hollow body 136 and the accommodating part 110. For example, if the accommodating part 110 has a top surface, A first exhaust port 137 and a second exhaust port 138 may be provided.

Furthermore, in the semiconductor laser device 400, the inlet may be formed continuously from the first inlet 127 to the second inlet 128. Similarly, the exhaust port may be formed continuously from the first exhaust port 137 to the second exhaust port 138.

Furthermore, the semiconductor laser device 400 may have only one laser module 101 and only one optical component 105.

As described above, according to the fourth embodiment, the gas supply section 120 has the intake side hollow body 126 disposed vertically below the housing section 110, and the first intake port 127 is located on the intake side. It is arranged between the hollow body 126 and the housing part 110. Further, the gas exhaust section 130 has an exhaust side hollow body 136 disposed above the accommodation section 110 in the vertical direction, and the first exhaust port 137 is disposed between the accommodation section 110 and the exhaust side hollow body 136. has been done.

Therefore, the gas supplied into the intake-side hollow body 126 from the outside of the semiconductor laser device 400 is supplied into the housing section 110 from the vertically lower side as a wide-ranging airflow in the XY plane. The gas supplied into the housing section 110 is supplied to the emission side space of each laser module 101 and the input side space of each optical component 105, and heads toward the first exhaust port 137 and the second exhaust port 138 almost in a straight line.

As a result, even if contaminants are generated in the vicinity of the emission side space of the laser module 101 and the input side space of the optical component 105, the contaminants can be carried out in the gas flow outside the housing section 110 and evacuated more efficiently and quickly. Therefore, the accumulation of deposits on each laser module 101 and each optical component 105 can be further suppressed. Further, the structures of the intake system (for example, piping, etc.) of the gas supply section 120 and the exhaust system of the gas exhaust section 130 can be simplified.

(Fifth embodiment)
Hereinafter, the differences between the fifth embodiment and the fourth embodiment will be mainly described. FIG. 6 is a schematic side view showing the inside of a semiconductor laser device 500 according to the fifth embodiment. FIG. 7 is a schematic plan view showing the inside of a semiconductor laser device 500 according to the fifth embodiment.

The accommodating portion 110 has a bottom surface 113 along the XY plane (that is, the horizontal plane). A mounting board on which the laser module 101 and the optical component 105 are mounted is arranged on the bottom surface 113.

Specifically, as shown in FIG. 6, three laser modules 101 are arranged so as to overlap each other when viewed from the side along the ZX plane (vertical plane along the traveling direction of the laser beam 1). . Further, the three laser modules 101 are arranged shifted in the Y-axis direction so as not to overlap each other in the X-axis direction (see FIG. 7).

Three optical components 105 are arranged corresponding to the three laser modules 101. Similar to the laser module 101, the three optical components 105 are arranged so as to overlap each other when viewed from the side along the ZX plane (a vertical plane along the traveling direction of the laser beam 1). Further, the three optical components 105 are arranged shifted in the Y-axis direction so as not to overlap each other in the X-axis direction (see FIG. 7).

Three first intake ports 127 are provided on the bottom surface 113 of the accommodating portion 110 in correspondence with the three laser modules 101. Specifically, the first intake port 127 is provided below the emission side space of the corresponding laser module 101 in the vertical direction, and extends in the Y-axis direction (see FIG. 7). Therefore, gas is supplied from the intake-side hollow body 126 to the emission-side space of each laser module 101 via each first intake port 127 .

Furthermore, three second air intake ports 128 are provided on the bottom surface 113 of the housing portion 110, corresponding to the three optical components 105. Specifically, the second air intake port 128 is provided below the exit side space of the corresponding optical component 105 in the vertical direction, and extends in the Y-axis direction (see FIG. 7). Therefore, gas is supplied from the intake-side hollow body 126 to the exit-side space of each optical component 105 via each first intake port 127 .

The first intake port 127 and the second intake port 128 are each a slit portion in which a plurality of slits extending in the X-axis direction are spaced apart in the Y-axis direction.

In this way, since the first intake port 127 is provided for each laser module 101 and the second intake port 128 is provided for each optical component 105, the emission side space of each laser module 101 and the emission side space of each optical component 105 are It is easy to ensure that the strength of the gas supplied to the side space is above a certain level, and the gas can be locally supplied to a specific position. Therefore, pollutants can be exhausted more efficiently than in the fourth embodiment.

Three first exhaust ports 137 are arranged on the top surface 112 of the housing portion 110 in correspondence with the three first intake ports 127. The first exhaust port 137 is provided for each first intake port 127 at a position facing the first intake port 127 in the Z-axis direction, and extends in the Y-axis direction. Therefore, contaminants generated in the emission side space of each laser module 101 are exhausted to the exhaust side hollow body 136 via each first exhaust port 137.

Furthermore, three second exhaust ports 138 are arranged on the top surface 112 of the housing portion 110 in correspondence with the three second air intake ports 128. The second exhaust port 138 is provided for each second intake port 128 at a position facing the second intake port 128 in the Z-axis direction, and extends in the Y-axis direction. Therefore, contaminants generated in the output side space of each optical component 105 are exhausted to the exhaust side hollow body 136 via each second exhaust port 138.

The first exhaust port 137 and the second exhaust port 138 are each a slit portion in which a plurality of slits extending in the X-axis direction are spaced apart in the Y-axis direction.

As described above, according to the fifth embodiment, the housing section 110 has a horizontal bottom surface 113, and the plurality of laser modules 101 are arranged on the bottom surface 113 in the traveling direction (X-axis direction) of the laser beam 1. They are arranged shifted in the Y-axis direction so as not to overlap.

In this way, even in the semiconductor laser device 500 in which a plurality of laser modules 101 are arranged side by side on the bottom surface 113, the same effects as in the fourth embodiment can be obtained.

Note that the semiconductor laser device 500 may include only one laser module 101 and only one optical component 105.

(Sixth embodiment)
Hereinafter, the differences between the sixth embodiment and the fifth embodiment will be mainly described. FIG. 8 is a schematic side view showing the inside of a semiconductor laser device 600 according to the sixth embodiment. Note that the semiconductor laser device 600 in FIG. 8 employs a method in which a cooling water channel is introduced from the bottom surface of the laser module 101.

On the lower side of the bottom surface 113, an intake side hollow body 626a, an intake side hollow body 626b, and an element cooling block 650 are arranged.

In the sixth embodiment, the gas supply section 120 has an intake-side hollow body 626a and an intake-side hollow body 626b that are smaller than those in the fifth embodiment. The intake-side hollow body 626a and the intake-side hollow body 626b are arranged below the bottom surface 113.

The intake side hollow body 626a is arranged vertically below the emission side space of the laser module 101, and extends from the emission side space of the most positive side laser module 101 to the most negative side laser module 101 in the Y-axis direction. It extends to the exit side space. Therefore, gas is supplied from the intake side hollow body 626a to the emission side space of each laser module 101 via each first intake port 127.

The intake side hollow body 626b is arranged vertically below the output side space of the optical component 105, and extends from the output side space of the most positive side optical component 105 to the most negative side optical component 105 in the Y-axis direction. It extends to the exit side space. Therefore, gas is supplied from the intake side hollow body 626b to the output side space of each optical component 105 via each second intake port 128.

The element cooling block 650 is a block that constitutes a water-cooled cooling system. The element cooling block 650 is disposed below the bottom surface 113 and directly below the plurality of laser modules 101 in the vertical direction. Since the element cooling block 650 is in contact with the bottom surface 113, it is possible to cool the plurality of laser modules 101 via the bottom surface 113.

Note that an active cooling method or a passive cooling method may be employed as the cooling system. Note that the active cooling method is a cooling method in which a water channel is formed within the laser module 101. On the other hand, the passive cooling method is a cooling method in which no water channel is formed within the laser module 101.

The semiconductor laser device 600 may have support blocks 660 and 670. The support block 660 is arranged between the intake side hollow body 626a and the intake side hollow body 626b. The support block 670 is arranged on the positive side of the intake-side hollow body 626b in the X-axis direction. The housing portion 110 is supported by support blocks 660 and 670.

As explained above, according to the sixth embodiment, the same effects as the fifth embodiment can be obtained. The semiconductor laser device 600 also includes an element cooling block 650. The element cooling block 650 is disposed on the lower side of the housing section 110 in the vertical direction and at a position different from the first intake port 127, and cools the plurality of laser modules 101 via the bottom surface 113.

Therefore, gas can be effectively supplied into the housing section 110 while cooling the plurality of laser modules 101 in a relatively narrow space. Therefore, it is possible to suppress the accumulation of deposits without deteriorating the optical characteristics of the laser beam 1 to the plurality of laser modules 101, and the reliability of the semiconductor laser device 100 is significantly improved. laser module 101 can be cooled.

Note that the water channel of the cooling system may be introduced into the interior of the housing section 110 from the side surface 119 of the housing section 110. Note that, as described above, the side surface 119 is a surface on the negative side in the X-axis direction along the YZ plane.

(Modification 1)
Hereinafter, regarding the laser device 700 according to Modification Example 1, mainly the differences from the second embodiment will be described.

FIG. 9 is a schematic side view showing the inside of a laser device 700 according to Modification 1.

The housing section 110 of the laser device 700 has a plurality of internal spaces S1 and S2. Three laser modules 101 are arranged in the internal space S1 so as not to overlap in the Z-axis direction and the X-axis direction.

Each laser module 101 emits laser light 1. Note that the plurality of laser beams 1 are condensed by a condensing element such as a diffraction grating (not shown). The light generated by condensing the plurality of laser beams 1 is the condensed laser beam LC.

As in the second embodiment, three first intake ports 121 are provided on the bottom surface 113 of the housing section 110, corresponding to each of the three laser modules 101. Additionally, three first exhaust ports 131 are arranged on the top surface 112 of the housing portion 110 in correspondence with the three first intake ports 121 .

Furthermore, for example, an optical component 501 is arranged in the internal space S1. The optical component 501 is an optical component through which the condensed laser beam LC passes.

As shown in FIG. 9, an optical component 502 may be placed on a wall that partitions the interior space S1 and the interior space S2. The optical component 502 is an optical component that guides the focused laser beam LC into the internal space S2.

For example, optical components 503, 504, and 505 are arranged in the internal space S2. The condensed laser beam LC has its traveling direction changed by an optical component 503, passes through an optical component 504, and is further changed in its traveling direction by an optical component 505. Note that the focused laser beam LC may be output to the outside of the housing section 110 by an optical component 506 provided on the positive side surface of the housing section 110 in the X-axis direction.

In this way, when the accommodating part 110 has the internal spaces S1 and S2, the optical components 501, 503 to 505 arranged in each internal space, and the optical components arranged at the boundary of the internal spaces S1 and S2. 502, the second intake port 122 and the second exhaust port 132 are arranged on the bottom surface 113 and the top surface 112.

Specifically, the second intake port 122 is arranged on the vertically lower side of the space on the incident end face side and the space on the output end face side of the optical component 501, and the second exhaust port 132 is arranged on the vertically upper side. . Similarly, the second air intake port 122 is arranged vertically below the space on the incident end face side and the space on the exit end face side of the optical component 502, and the second exhaust port 132 is arranged above the space in the vertical direction.

Therefore, the accumulation of deposits on the optical component 501 and the optical component 502 can be suppressed.

Further, a second intake port 122 and a second exhaust port 132 are arranged vertically below and above the optical components 503 to 505, respectively. Thereby, the gas supplied from the two second intake ports 122 bypasses the optical component 503 and is supplied to the space on the reflective end surface side of the optical component 503. Then, the gas passes through the space on the incident end surface side of the optical component 504, detours around the optical component 504, and reaches the space on the output end surface side of the optical component 504. The gas then reaches the space on the reflective end surface side of the optical component 505, bypasses the optical component 505, heads toward the two second exhaust ports 132, and is exhausted to the outside of the housing section 110 from the two second exhaust ports 132. be done.

Therefore, it is possible to suppress the accumulation of deposits on the optical components 503 to 505 in the internal space S2.

According to Modification 1, effects similar to those of the first and second embodiments can be obtained. In addition, by arranging the second intake port 122 and the second exhaust port 132 on the bottom surface 113 and top surface 112 of the internal spaces S1 and S2, respectively, the optical components 501, 503 to 505 in the internal spaces S1 and S2, and It is possible to suppress the accumulation of deposits on the optical component 502 located at the boundary between the internal spaces S1 and S2.

Note that in the first modification described above, a plurality of second intake ports 122 and a plurality of second exhaust ports 132 are provided for each of the optical components 503 to 505. However, for the optical components 503 to 505, instead of the plurality of second intake ports 122, one intake port 122 extending in the X-axis direction is provided, and instead of the plurality of second exhaust ports 132, one One second exhaust port 132 extending in the axial direction may be provided.

Specifically, the second intake port 122 and the second exhaust port 132 are arranged such that the length of the second intake port 122 and the second exhaust port 132 in the X-axis direction is longer than the length of the projected portion of the optical components 503 to 505 with respect to the X-axis. It is sufficient if the second exhaust port 132 is formed.

(Modification 2)
Hereinafter, regarding the semiconductor laser device 800 according to Modification Example 2, mainly the differences from the third embodiment will be described. FIG. 10 is a schematic side view showing the inside of a semiconductor laser device 800 according to Modification Example 2. FIG.

In FIG. 10, three laser modules 101 are arranged in the housing section 110. Further, each laser module 101 is arranged such that the laser light emitting end face 101a is inclined with respect to a vertical plane (YZ plane). That is, in the semiconductor laser device 800, the laser beam 1 is emitted in a direction inclined at a predetermined angle with respect to the X-axis direction.

Similar to the fourth embodiment, the gas supply section 120 has an intake side hollow body 126, and a first intake port 127 is provided at the upper part of the intake side hollow body 126. Further, the gas exhaust section 130 has an exhaust side hollow body 136, and a first exhaust port 137 is provided at the lower part of the exhaust side hollow body 136. The first intake port 127 and the first exhaust port 137 extend in the X-axis direction to the extent that they cover at least the projected portions of the three laser modules 101 with respect to the X-axis.

In Modification 2, the gas supply section 120 has a gas supply pipe 123. That is, in the second modification, gas is supplied to each laser module 101 not only from the first intake port 127 but also from the gas supply pipe 123.

In FIG. 10, the gas supply section 120 has three gas supply pipes 123 corresponding to the three laser modules 101. Each gas supply pipe 123 supplies gas from the first intake port 125 of its tip 124 toward the space on the emission end surface 101a side of the laser module 101.

As shown in FIG. 10, the tip portion 124 extends parallel to the output end surface 101a, and the gas supplied from the gas supply pipe 123 is supplied so as to flow parallel to the output end surface 101a. Good too.

As explained above, according to the second modification, even when the emission end surface 101a of the laser module 101 is arranged so as to be inclined with respect to the vertical plane (YZ plane), the first intake port 127 and the second exhaust port 138 By arranging them below and above the laser module 101 in the vertical direction, the accumulation of deposits on the laser module 101 can be suppressed.

Further, by including the gas supply pipe 123, the semiconductor laser device 800 can further suppress the accumulation of deposits on the laser module 101.

Note that the semiconductor laser device 800 does not need to have the intake side hollow body 126 and the exhaust side hollow body 136. Instead, the first intake port 121 and the first exhaust port 131 may be provided as elongated holes extending in the X-axis direction on the bottom and top surfaces of the accommodating portion 110 of the semiconductor laser device 800.

(Other variations)
In the second to sixth embodiments, the second intake port 122 and the second exhaust port 132 are arranged vertically above and below at least one of the entrance side space and the exit side space of the optical component 105, respectively. All you have to do is stay there.

Further, the second intake port 122 and the second exhaust port 132 may be arranged vertically above and below, respectively, the space on the end surface where deposits tend to accumulate, of the entrance end surface and the exit end surface of the optical component 105. good.

In the third to sixth embodiments, optical components such as a diffraction grating on which the laser beam 1 is focused and an external resonant mirror may be provided. Further, in the third to sixth embodiments, the second intake port 122 and the second exhaust port 132 are arranged vertically above and below at least one of the incident side space and the output side space of the diffraction grating. Good too. Similarly, the second intake port 122 and the second exhaust port 132 may be arranged vertically above and below at least one of the entrance side space and the exit side space of the external resonant mirror.

In each of the embodiments described above, the laser element 102 may be an element having only one emitter. Further, the laser element 102 may be an element that emits the laser beam 1 with a wavelength longer than 500 nm.

A form obtained by applying various modifications to the above embodiments and modifications that a person skilled in the art can think of, or by arbitrarily combining the components and functions of the above embodiments without departing from the spirit of the present disclosure. These forms are also included in the present disclosure.

According to the present disclosure, it is possible to provide a highly reliable semiconductor laser device that can suppress the accumulation of deposits derived from contaminants without deteriorating the optical characteristics of laser light.

The present disclosure can be suitably applied to a semiconductor laser device including a semiconductor laser element. In particular, the present invention can be suitably applied to a semiconductor laser device including a laser element that has an exposed end face structure and emits laser light of a short wavelength (blue band).

1 Laser light 100, 200, 300, 400, 500, 600 Semiconductor laser device 101 Laser module 102 Laser element 103 Optical component in module 104 Optical component 110 Housing section 111, 119 Side surface 112 Top surface 113 Bottom surface 120 Gas supply section 121, 125 , 127s First intake port 122, 128 Second intake port 123 Gas supply pipe 124 Tip portion 126, 626a, 626b Intake side hollow body 130 Gas exhaust section 131, 137 First exhaust port 132, 138 Second exhaust port 136 Exhaust side Hollow body 650 Element cooling block 626a, 626b Intake side hollow body 660, 670 Support block

Claims (14)

1. at least one laser element that emits laser light;
   an accommodating part that accommodates the at least one laser element therein;
   a gas supply unit that supplies gas from outside the storage unit;
   a gas exhaust part that exhausts gas inside the housing part to the outside of the housing part;
   Equipped with
   The gas supply unit has at least one first intake port that supplies gas from a vertically lower side toward a space on a laser beam emission side around the at least one laser element,
   The gas exhaust section has at least one first exhaust port disposed at a position facing the at least one first intake port in the vertical direction.
   Semiconductor laser equipment.
2. The at least one laser element includes a plurality of the laser elements,
   the at least one first intake port includes a plurality of first intake ports;
   the at least one first exhaust port includes a plurality of first exhaust ports;
   The plurality of first intake ports and the plurality of first exhaust ports are provided corresponding to the plurality of laser elements,
   The semiconductor laser device according to claim 1.
3. The at least one first intake port and the at least one first exhaust port are provided in the housing part,
   The semiconductor laser device according to claim 1 or 2.
4. The at least one first air intake port is partially provided in a vertically lower region of the accommodating portion corresponding to a space on a laser beam emission side of the at least one laser element.
   The semiconductor laser device according to claim 3.
5. The accommodating portion has a vertical side surface along the traveling direction of the laser beam,
   The plurality of laser elements are arranged offset along the side surface so as not to overlap in the vertical direction and in the traveling direction of the laser beam.
   The semiconductor laser device according to claim 2.
6. The gas supply section has a plurality of gas supply pipes that introduce gas into the storage section,
   The plurality of first intake ports are respectively provided in the plurality of gas supply pipes,
   The semiconductor laser device according to claim 5.
7. The plurality of laser elements are disposed upward in the vertical direction and upstream in the traveling direction of the laser beam,
   The plurality of gas supply pipes extend in the traveling direction of the laser beam,
   The plurality of gas supply pipes have a plurality of tip portions,
   The plurality of tip portions are located near the space on the laser beam emission side of the corresponding one of the plurality of laser elements,
   The plurality of first intake ports are respectively provided at the plurality of distal ends,
   The semiconductor laser device according to claim 6.
8. The accommodating part has a horizontal bottom surface,
   The plurality of laser elements are arranged on the bottom surface so as not to overlap in the traveling direction of the laser beam,
   The semiconductor laser device according to claim 2.
9. a cooling block that is disposed vertically below the accommodating portion and at a position different from the plurality of first intake ports, and cools the plurality of laser elements via the bottom surface;
   The semiconductor laser device according to claim 8.
10. The gas supply section has an intake side hollow body disposed vertically below the storage section,
    the at least one first intake port is disposed between the intake-side hollow body and the accommodating portion;
    The gas exhaust section has an exhaust side hollow body disposed vertically above the accommodation section,
    the at least one first exhaust port is disposed between the housing section and the exhaust side hollow body;
    A semiconductor laser device according to any one of claims 1 to 9.
11. further comprising an optical component through which the laser beam passes,
    The gas supply unit has a second intake port that supplies gas from a vertically lower side toward at least one space on the laser light incident side of the optical component and the laser light output side of the optical component,
    The gas exhaust section has a second exhaust port located at a position facing the second intake port in the vertical direction.
    A semiconductor laser device according to any one of claims 1 to 10.
12. The laser element has a plurality of emitters that emit the laser beam,
    the plurality of laser beams from the plurality of emitters are focused on the optical component;
    The semiconductor laser device according to claim 11.
13. The at least one laser element includes a plurality of the laser elements,
    The optical component is a diffraction grating or an external resonant mirror on which the plurality of laser beams emitted from the plurality of laser elements are focused.
    The semiconductor laser device according to claim 11 or 12.
14. The wavelength of the laser light is 500 nm or less,
    A semiconductor laser device according to any one of claims 1 to 13.

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