JP2022187270A - Light-emitting device - Google Patents

Abstract

To provide a light-emitting device capable of improving heat dissipation properties of a semiconductor laser chip.SOLUTION: A light-emitting device 10 comprises: a base 20 having a main surface 21; a plurality of semiconductor laser chips 60 mounted on the main surface 21 and having an optical axis parallel to the main surface 21; a plurality of mirrors 70 each of which has a reflective surface 71 that reflects emitted light L1 from an emission point E1 of each of the plurality of semiconductor laser chips 60; and an optical member 40 having a plurality of lens parts 43 each of which receives reflected light L2 from the reflective surface 71 of each of the plurality of mirrors 70. In the plan view of the main surface 21, a distance between a center position C1 of the emitted light L1 in the reflective surface 71 and a center position 43C of the lens part 43 corresponding to the reflective surface 71 among the plurality of lens parts 43 increases as a distance between the center position C1 of the emitted light L1 and a center position 44c of a lens region 44 increases, and output light L3 from each of the plurality of lens parts 43 is irradiated inside a predetermined surface area A1.SELECTED DRAWING: Figure 2

Description

The present disclosure relates to light emitting devices.

2. Description of the Related Art Conventionally, a light-emitting device including a plurality of semiconductor laser packages is known (for example, Patent Document 1). The light-emitting device described in Patent Document 1 includes a plurality of CAN packages mounted on a mounting substrate, and attempts to collect laser light from the plurality of CAN packages by a lens array.

JP 2012-215633 A

Each of the plurality of CAN packages has a semiconductor laser chip. Light emitting devices are required to have higher output, and the current supplied to each semiconductor laser chip tends to increase. As a result, the amount of heat generated in each semiconductor laser chip increases, so it is necessary to secure a heat radiation path from each semiconductor laser chip. However, in the light emitting device described in Patent Literature 1, it is necessary to form a plurality of holes in the mounting substrate in order to mount a plurality of CAN packages. As a result, the number of heat radiation paths in the mounting substrate is reduced compared to the case where the mounting substrate is not provided with holes, so that the heat dissipation characteristics from each semiconductor laser chip through the mounting substrate are degraded. Therefore, the amount of current that can be supplied to the semiconductor laser chip can be limited.

An object of the present disclosure is to solve such problems, and to provide a light-emitting device capable of improving the heat dissipation characteristics of a semiconductor laser chip.

In order to solve the above problems, one aspect of the light emitting device according to the present disclosure includes a base having a main surface, and a plurality of semiconductor laser chips mounted on the main surface and having optical axes parallel to the main surface. , a plurality of mirrors, each having a reflecting surface for reflecting light emitted from the emission point of each of the plurality of semiconductor laser chips; and a plurality of mirrors, each receiving the reflected light from the reflecting surface of each of the plurality of mirrors. and a center position of the emitted light on the reflecting surface and a center position of a lens portion corresponding to the reflecting surface among the plurality of lens portions in plan view of the main surface. increases as the distance between the center position of the emitted light and the center position of the lens area where the plurality of lens units are arranged increases, and the output light from each of the plurality of lens units becomes , the inside of a predetermined surface area smaller in area than the lens area is irradiated.

According to the present disclosure, it is possible to provide a light-emitting device capable of enhancing the heat dissipation characteristics of a semiconductor laser chip.

FIG. 1 is a plan view of a light emitting device according to Embodiment 1. FIG. 2 is a cross-sectional view of the light-emitting device according to Embodiment 1. FIG. FIG. 3 is a plan view of the light-emitting device according to Embodiment 1 from which the optical members are removed. 4 is a cross-sectional view showing configurations of a semiconductor laser chip, a submount, and a mirror according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating optical paths in the light-emitting device according to Embodiment 1. FIG. 6 is a diagram showing a positional relationship between a plurality of mirrors and a plurality of lens units in the light emitting device according to Embodiment 1. FIG. FIG. 7 is a plan view showing a state in which the optical member of the light emitting device according to Embodiment 2 is removed. FIG. 8 is a cross-sectional view of a light-emitting device according to Embodiment 2. FIG. FIG. 9 is a plan view of the light-emitting device according to Embodiment 3 from which the optical members are removed. 10 is a cross-sectional view of a light-emitting device according to Embodiment 3. FIG. FIG. 11 is a plan view showing a state in which the optical members are removed from the light-emitting device according to Embodiment 4. FIG. 12 is a cross-sectional view of a light-emitting device according to Embodiment 4. FIG. 13 is a plan view of the light-emitting device according to Embodiment 5 from which the optical members are removed. FIG. 14 is a cross-sectional view of a light-emitting device according to Embodiment 5. FIG. FIG. 15 is a plan view showing a state in which the optical members are removed from the light-emitting device according to Embodiment 6. FIG. FIG. 16 is a plan view showing a state in which the optical members are removed from the light-emitting device according to Embodiment 7. FIG. 17 is a plan view showing a state in which the optical member of the light-emitting device according to Embodiment 8 is removed. FIG. 18 is a schematic cross-sectional view of a light-emitting device according to Embodiment 8. FIG. FIG. 19 is a diagram showing a far-field image in which all output light profiles in a predetermined surface area of the light-emitting device according to Embodiment 8 are superimposed.

Embodiments of the present disclosure will be described below with reference to the drawings. It should be noted that each of the embodiments described below is a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, constituent elements, and arrangement positions and connection forms of the constituent elements shown in the following embodiments are examples and are not intended to limit the present disclosure.

Each figure is a schematic diagram and is not necessarily strictly illustrated. Therefore, the scales and the like are not always the same in each drawing. In addition, in each figure, the same code|symbol is attached|subjected to the substantially same structure, and the overlapping description is abbreviate|omitted or simplified.

In this specification, the terms "upper" and "lower" do not refer to the upward direction (vertically upward) and the downward direction (vertically downward) in absolute spatial recognition, but are based on the stacking order in the stacking structure. It is used as a term defined by a relative positional relationship. Also, the terms "above" and "below" are used not only when two components are spaced apart from each other and there is another component between the two components, but also when two components are spaced apart from each other. It also applies when they are arranged in contact with each other.

(Embodiment 1)
A light-emitting device according to Embodiment 1 will be described.

[1-1. overall structure]
First, the overall configuration of the light emitting device according to this embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 and 2 are respectively a plan view and a cross-sectional view of a light emitting device 10 according to this embodiment. FIG. 2 shows a cross section taken along line II-II of FIG. FIG. 3 is a plan view showing a state in which the optical member 40 is removed from the light emitting device 10 according to this embodiment. Each figure also shows an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other.

As shown in FIG. 2, the light-emitting device 10 according to the present embodiment is a device that irradiates light onto a predetermined surface area (not shown) located away from the light-emitting device 10 in the Z direction. 20 , a plurality of semiconductor laser chips 60 , a plurality of mirrors 70 and an optical member 40 . In the present embodiment, light emitting device 10 further includes frame member 30 and a plurality of submounts 50 .

The base 20 shown in FIGS. 1 to 3 is a member having a main surface 21 on which a plurality of semiconductor laser chips 60 are mounted. In this embodiment, the base 20 is a substrate having a substantially rectangular plate-like shape. The base 20 is made of a material with high thermal conductivity, and also functions as a heat dissipation member that dissipates the heat generated by the plurality of semiconductor laser chips 60 .

The material of the base 20 is, for example, a metal material, a ceramic material, a glass material, a resin material, or the like. In order to efficiently dissipate the heat generated by the semiconductor laser chip 60 through the base 20, the base 20 is preferably made of a material with high thermal conductivity such as a metal material. Examples of metal materials that have high thermal conductivity and are practical for the base 20 include Cu and Al. In this embodiment, the base 20 is a Cu substrate made of Cu.

A structure for fixing the base 20 may be formed on a portion of the base 20 outside the frame member 30 or the like. For example, a through hole or the like may be formed in the base 20 .

The frame member 30 shown in FIGS. 2 and 3 is an annular member surrounding the multiple semiconductor laser chips 60 and the multiple mirrors 70 . The frame member 30 is erected on the main surface 21 of the base 20 and functions as a part of a container that houses a plurality of semiconductor laser chips 60 and the like. The frame member 30 also has a function of supporting the optical member 40 . The frame member 30 is sandwiched between the base 20 and the optical member 40 . A plurality of semiconductor laser chips 60 and a plurality of mirrors 70 are accommodated in a space surrounded by the frame member 30 , the base 20 and the optical member 40 . Although not shown, the frame member 30 may have current terminals for supplying current to the plurality of semiconductor laser chips 60 . The frame member 30 is made of, for example, a metal such as Fe, an alloy, or the like. When the frame member 30 has a current terminal, an insulating member is arranged around the current terminal.

Each of the plurality of semiconductor laser chips 60 shown in FIGS. 2 and 3 is a semiconductor light emitting device mounted on the principal surface 21 of the base 20 and having an optical axis parallel to the principal surface 21 . In the present embodiment, each of twenty semiconductor laser chips 60 is mounted on main surface 21 via submount 50 . A plurality of semiconductor laser chips 60 are arranged in a matrix in the X-axis direction and the Y-axis direction, as shown in FIG. Each of the plurality of semiconductor laser chips 60 is arranged at a position corresponding to each of the plurality of lens portions 43 of the optical member 40 .

The plurality of semiconductor laser chips 60 all have the same configuration. Here, the configuration of the semiconductor laser chip 60 will be described with reference to FIG. FIG. 4 is a cross-sectional view showing the configuration of the semiconductor laser chip 60, submount 50, and mirror 70 according to this embodiment. FIG. 4 is an enlarged view of a part of FIG. As shown in FIG. 4, each of the plurality of semiconductor laser chips 60 has an emission point E1 from which emission light L1, which is laser light, is emitted. The optical axis of the emitted light L1 is parallel to the main surface 21 of the base 20 . Here, the emitted light L1 is indicated by an arrow, and this arrow indicates the optical axis of the emitted light L1, and the actual emitted light L1 is divergent light with a width.

The semiconductor laser chip 60 has an elongated shape whose longitudinal direction is the optical axis direction (that is, the resonance direction) of the emitted light L1. As an example, the length of the semiconductor laser chip 60 in the optical axis direction is 1200 μm, but it is not limited to this.

A semiconductor laser chip 60 is mounted on the upper surface of the submount 50 . Specifically, the semiconductor laser chip 60 is mounted on wiring electrodes (not shown) on the submount 50 . In this embodiment, the semiconductor laser chip 60 is mounted on the submount 50 by junction-down mounting. The mounting form of the semiconductor laser chip 60 is not limited to this, and may be mounted on the submount 50 by junction-up mounting.

The semiconductor laser chip 60 is mounted so that the end face where the emission point E1 is positioned protrudes from the end face of the submount 50 on the light emission side. In other words, the semiconductor laser chip 60 protrudes from the end face of the submount 50, and the emission point E1 of the semiconductor laser chip 60 is positioned closer to the light emission side of the semiconductor laser chip 60 than the end face of the submount 50 on the light emission side. ing. The amount of protrusion of the semiconductor laser chip 60 (that is, the distance from the light emitting side end surface of the submount 50 to the emission point E1 of the semiconductor laser chip 60) is, for example, 5 μm or more and 20 μm or less, but is not limited thereto. In this embodiment, the amount of projection of the semiconductor laser chip 60 is 10 μm.

Each of the plurality of submounts 50 shown in FIGS. 2 to 4 is a member that is mounted on main surface 21 of base 20 and supports semiconductor laser chip 60 . In this embodiment, the plurality of submounts 50 all have the same configuration. As shown in FIG. 4, the submount 50 has a mounting surface 51 facing the main surface 21 of the base 20, and a mounting surface 52 positioned behind the mounting surface 51 and on which the semiconductor laser chip 60 is mounted. In other words, the submount 50 is positioned between the base 20 and the semiconductor laser chip 60 .

The light emitting device 10 includes the same number of submounts 50 as the semiconductor laser chips 60 . In this embodiment, 20 submounts 50 correspond to 20 semiconductor laser chips 60 on a one-to-one basis.

The submount 50 also functions as a heat sink for dissipating heat generated by the semiconductor laser chip 60 . Therefore, the material of the submount 50 may be either a conductive material or an insulating material, but preferably a material with high thermal conductivity. The thermal conductivity of the submount 50 is preferably 150 W/(m·K) or more, for example. For example, the submount 50 is made of a ceramic such as aluminum nitride (AlN) or polycrystalline silicon carbide (SiC), a metal material such as Cu, or a single crystal diamond or polycrystalline diamond. In this embodiment, the submount 50 is made of AlN. The shape of the submount 50 is, for example, a rectangular parallelepiped, but is not limited to this.

The submount 50 is bonded, for example, to the main surface 21 of the base 20 using a metallic bonding material. In other words, the submount 50 is mounted without forming a fixing hole or the like in the base 20 . Therefore, the submount 50 can be mounted on the base 20 without degrading the heat dissipation characteristics of the base 20 .

Each of the plurality of mirrors 70 is, as shown in FIG. 4, an element having a reflecting surface 71 that reflects the emitted light L1 from the emission point E1 of each of the plurality of semiconductor laser chips 60 . The multiple mirrors 70 all have the same configuration. A plurality of mirrors 70 are arranged in a matrix in the X-axis direction and the Y-axis direction, as shown in FIG. Each of the plurality of mirrors 70 is arranged at a position corresponding to each of the plurality of lens portions 43 of the optical member 40 . As shown in FIG. 4 , the reflecting surface 71 is a plane mirror arranged to face the emission point E1 of the semiconductor laser chip 60 . In this embodiment, the reflecting surface 71 is inclined at 45° with respect to the direction of the emitted light L1. In other words, the direction perpendicular to the reflecting surface 71 is inclined at 45° with respect to the direction of the emitted light L1. The emitted light L1 is reflected by the reflecting surface 71 and propagates from the mirror 70 toward the optical member 40 as reflected light L2. In the present embodiment, emitted light L1 is incident on center position 71C of reflecting surface 71 shown in FIG. Here, the center position 71C of the reflecting surface 71 is defined by the center-of-gravity position of the reflecting surface 71 . Also, the reflected light L2 is indicated by an arrow, but this arrow indicates the optical axis of the reflected light L2, and the actual reflected light L2 is divergent light with a width.

Mirror 70 is mounted on main surface 21 of base 20 . As shown in FIG. 3, the light-emitting device 10 includes the same number of mirrors 70 as there are semiconductor laser chips 60 . In this embodiment, 20 mirrors 70 correspond to 20 semiconductor laser chips 60 on a one-to-one basis. Here, all sets of the mirror 70 and the semiconductor laser chip 60 have the same positional relationship. In other words, the distances from the emission point E1 of the semiconductor laser chip 60 to the center position C1 of the emission light L1 on the reflecting surface 71 are all the same, and the height of the optical axis of the emission light L1 of the semiconductor laser chip 60 from the main surface 21 is the same. The height from the main surface 21 of the sheath reflective surface 71 is all the same.

The optical member 40 shown in FIGS. 1, 2, and 4 is a translucent plate member having a plurality of lens portions 43. As shown in FIG. The optical member 40 is supported by the frame member 30 and also functions as a lid for the area surrounded by the frame member 30 . Each of the plurality of lens portions 43 receives reflected light L2 from each reflecting surface 71 of each of the plurality of mirrors 70, as shown in FIG. In this embodiment, all of the multiple lens units 43 have the same focal length. The lens portion 43 is, for example, a spherical lens. The surface of the lens portion 43 facing the reflecting surface 71 is flat, and the surface on the back side (that is, outside) of the surface has a spherical convex shape. That is, the lens portion 43 is a convex lens. The optical member 40 has the same number of lens portions 43 as the semiconductor laser chips 60 and the mirrors 70 . The plurality of lens units 43 are arranged in a matrix in the X-axis direction and the Y-axis direction, as shown in FIG. Each of the plurality of lens units 43 is arranged at a position corresponding to each of the plurality of mirrors 70 . In this embodiment, 20 lens units 43 correspond to 20 mirrors 70 on a one-to-one basis. The optical member 40 is made of, for example, a translucent member such as glass.

The optical member 40 has a lens region 44 in which a plurality of lens portions 43 are arranged, as shown in FIG. The lens region 44 is, for example, a region surrounded by an envelope 44E of the multiple lens portions 43 . A center position 44C of the lens area 44 is the center of gravity of the lens area 44 .

[1-2. Optical path]
Next, the optical path in the light emitting device 10 according to this embodiment will be described mainly with reference to FIGS. 5 and 6. FIG. FIG. 5 is a cross-sectional view illustrating optical paths in the light emitting device 10 according to this embodiment. FIG. 5 shows a partially enlarged view of a section similar to that of FIG. 2 and an optical path. FIG. 6 is a diagram showing the positional relationship between the multiple mirrors 70 and the multiple lens units 43 in the light emitting device 10 according to the present embodiment. FIG. 6 shows a plan view of the main surface 21 of the base 20 in plan view. In FIG. 6, the contours of the plurality of lens portions 43 are also shown by dashed lines.

As shown in FIG. 5, emitted light L1 emitted from the semiconductor laser chip 60 and having an optical axis parallel to the main surface 21 is reflected by the reflecting surface 71 of the mirror 70 and travels toward the lens portion 43 as reflected light L2. Propagate. Here, the direction of the optical axis of the reflected light L2 is parallel to the direction perpendicular to the main surface 21 of the base 20 . The reflected light L2 is incident on the lens portion 43 . The direction of the optical axis of the lens portion 43 is parallel to the direction perpendicular to the main surface 21 of the base 20 . The lens part 43 makes the reflected light L2, which is divergent light, in a parallel state or a converged state, and is output from the light emitting device 10 as the output light L3. Here, since the optical axis of the reflected light L2 does not pass through the center of the lens portion 43 and is parallel to the optical axis of the lens portion 43, the output light L3 from the lens portion 43 is directed in the optical axis direction of the lens portion 43. refract. Although the output light L3 is indicated by an arrow, this arrow indicates the optical axis of the output light L3, and the actual output light L3 has a width.

Here, as shown in FIGS. 5 and 6, in plan view of the main surface 21, the center position C1 of the emitted light L1 on the reflecting surface 71 and the lens portion corresponding to the reflecting surface 71 among the plurality of lens portions 43 43 and the center position 43C in the X-axis direction is the distance in the X-axis direction between the center position C1 of the emitted light L1 and the center position 44C of the lens region 44 in which the plurality of lens portions 43 are arranged. It increases as (De) increases. Here, the center position C1 of the emitted light L1 on the reflecting surface 71 is defined by the center position of the beam profile of the emitted light L1 or the position where the intensity of the emitted light L1 is maximized. A center position 43C of the lens portion 43 is defined at a position through which the optical axis of the lens portion 43 (one-dot chain line shown in FIG. 5) passes in plan view of the main surface 21 . Although no auxiliary line is shown in the drawing, the center position C1 of the emitted light L1 on the reflecting surface 71 also changes in the Y-axis direction as well.

In addition, in the present embodiment, the center position 71C of the reflecting surface 71 in plan view of the main surface 21 and the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 among the plurality of lens portions 43 are aligned in the X-axis direction. The distance increases as the distance in the X-axis direction between the center position 71C of the reflecting surface 71 and the center position 44C of the lens area 44 increases. In this embodiment, the center position C1 of the emitted light L1 on the reflecting surface 71 and the center position 71C of the reflecting surface 71 match. Note that the center position C1 of the emitted light L1 on the reflecting surface 71 and the center position 71C of the reflecting surface 71 do not have to match.

With the above configuration, as shown in FIG. 5, as the distance between the center position C1 of the emitted light L1 and the center position 44C of the lens area 44 increases, the optical axis of the reflected light L2 on the lens section 43 increases. angle of refraction increases.

Therefore, the output light L3 from each of the plurality of lens portions 43 is irradiated inside the predetermined surface area A1 having an area smaller than that of the lens area 44. As shown in FIG. As described above, according to the light-emitting device 10 according to the present embodiment, the predetermined surface area A1 having a smaller area than the lens area 44 is provided with no condensing lens between the optical member 40 and the predetermined surface area A1. A plurality of output lights L3 can be collected.

Here, by making Dc proportional to De, the optical axes of all the output light beams L3 can be gathered in one place. In addition, the central position 71C of the reflecting surface 71 also changes in the Y-axis direction. As shown in FIG. 6, the center position 43C of the lens portion 43 is on the line segment connecting the center position C1 of the emitted light L1 and the center position 44C of the lens region 44, but it is not necessarily strictly on the line segment. It doesn't have to be. Furthermore, although the direction of the optical axis of each output light L3 is generally directed toward the center position of the lens region 44 in plan view, it does not necessarily have to be directed strictly toward the center position. Further, by setting the distance from the emission point E1 of the semiconductor laser chip 60 to the central position C1 of the emitted light L1 on the reflecting surface 71 to be the same, the distance from the emission point E1 of the semiconductor laser chip 60 to the lens portion 43 is all the same. As a result, the effect of changes in the positions of the semiconductor laser chip 60 and the mirror 70 on the convergence state of the output light L3 can be greatly reduced. In addition, since the center position C1 of the emitted light L1 on the reflecting surface 71 and the center position 71C of the reflecting surface 71 coincide with each other, the emitted light L1 can be efficiently reflected by the mirror 70 .

Further, in the present embodiment, by making the output light L3 a condensed beam converged by the lens unit 43, the output light L3 is projected onto the predetermined surface region A1 having a smaller area than when the output light L3 is not a condensed beam. can be collected. In other words, the area of the far-field pattern formed by the multiple output lights L3 can be reduced. Therefore, it is possible to further increase the light density in the predetermined surface area A1.

[1-3. effect]
Next, effects of the light emitting device 10 according to the present embodiment will be described. Light-emitting device 10 according to the present embodiment includes a plurality of semiconductor laser chips 60, as shown in FIG. Each of the plurality of semiconductor laser chips 60 is mounted on main surface 21 of base 20 and has an optical axis parallel to main surface 21 . A semiconductor laser chip 60 is mounted on the main surface 21 via a submount 50 . Here, since the submount 50 can be mounted without forming a fixing hole or the like in the base 20 , the submount 50 can be mounted on the base 20 without degrading the heat dissipation characteristics of the base 20 . Also, the semiconductor laser chip 60 can be mounted on the base 20 only through the submount 50 . In other words, the semiconductor laser chip 60 can be mounted at a position close to the main surface 21 of the base 20 . Therefore, by using the submount 50 with high thermal conductivity, the heat radiation characteristic from the semiconductor laser chip 60 to the base 20 can be improved compared to the case where a CAN package including the semiconductor laser chip 60 is mounted on the base 20. can be done. As described above, according to the present embodiment, it is possible to realize the light emitting device 10 capable of improving the heat dissipation characteristics of the plurality of semiconductor laser chips 60 .

[1-4. Production method]
Next, a method for manufacturing the light emitting device 10 according to this embodiment will be described.

First, a semiconductor laser chip 60 is mounted on each of the plurality of submounts 50 . Specifically, the semiconductor laser chip 60 is bonded to the mounting surface 52 of the submount 50 using a metallic bonding material. A Zener diode for maintaining a constant voltage supplied to the semiconductor laser chip 60 may also be joined to the mounting surface 52 of the submount 50 . As the metallic bonding material, for example, solder materials such as AuSn and AuGeNi, and bonding materials containing fine particles of Cu, Al, Au, Ag, and alloys thereof can be used.

Subsequently, the submount 50 with the semiconductor laser chip 60 mounted thereon is mounted on the main surface 21 of the base 20 . Specifically, the submount 50 is bonded to the main surface 21 of the base 20 using a metallic bonding material. As the metallic bonding material, for example, solder materials such as AuSn and AuGeNi, and bonding materials containing fine particles of Cu, Al, Au, Ag, and alloys thereof can be used. When bonding the submount 50 to the main surface 21, the base 20, the submount 50, and the metal-based bonding material are heated, for example, at 200° C. for about 30 minutes. Thereafter, by cooling the metal-based bonding material or the like, the metal-based bonding material is hardened. Thereby, the submount 50 can be mounted on the base 20 . Note that the frame member 30 is mounted on the base 20 in advance. Also, the frame member 30 may be formed integrally with the base 20 .

Subsequently, a wire for supplying current to the semiconductor laser chip 60 is connected to the semiconductor laser chip 60 and the like. Specifically, for example, the terminals provided on the frame member 30 and the semiconductor laser chips 60 are connected by wires, and two adjacent semiconductor laser chips 60 are connected in series by wires. As a result, current can be supplied from the outside of the light emitting device 10 . The wire material is not particularly limited as long as it is conductive, and examples thereof include Au, Ag, and Cu.

Subsequently, the mirror 70 is mounted on the main surface 21 of the base 20 . Specifically, the mirror 70 is bonded to the main surface 21 of the base 20 using a metallic bonding material. Active alignment of the mirror 70 is performed before curing the metallic bonding material. In other words, a current is supplied to the semiconductor laser chip 60 to emit the emitted light L1, and while confirming the position of the emitted light L1 on the reflecting surface 71 of the mirror 70 and the position of the reflected light L2 from the mirror 70, The position of the mirror 70 on the main surface 21 is adjusted. After the alignment of the mirror 70 is completed, the metallic bonding material is cured in the same manner as when the submount 50 is mounted. Thereby, the mirror 70 can be mounted on the base 20 .

Subsequently, the optical member 40 is mounted on the base 20 . In this embodiment, the optical member 40 is mounted on the base 20 via the frame member 30 . Specifically, the optical member 40 is bonded to the frame member 30 using an adhesive or the like. As the adhesive, for example, a UV curable adhesive can be used. First, a UV curable adhesive is applied to at least one of the frame member 30 and the optical member 40 to temporarily fix the optical member 40 . Subsequently, active alignment of the positions of the optical member 40 in the X-, Y-, and Z-axis directions is performed. After the alignment of the optical member 40 is completed, the UV curable adhesive is cured by irradiating it with UV light. Thereby, the optical member 40 can be mounted on the base 20 .

As described above, the light emitting device 10 according to this embodiment can be manufactured. A translucent member such as a cover glass may be attached between the optical member 40 and the frame member 30 . Also, the plurality of lens portions 43 of the optical member 40 may be configured to be separable from the optical member 40 . In this case, the plurality of lens units 43 may be actively aligned individually.

(Embodiment 2)
A light-emitting device according to Embodiment 2 will be described. In the light emitting device 10 according to Embodiment 1, the positions of the mirror 70 and the semiconductor laser chip 60 with respect to the lens portion 43 are adjusted according to the distance from the center position 44C of the lens region 44 to the center position 71C of the reflecting surface 71 of the mirror 70. While maintaining the relationship, the position in the plane view was changed. The light emitting device according to the present embodiment does not change the positions of the mirror 70 and the semiconductor laser chip 60 with respect to the lens portion 43, but changes the height of the optical axis of the emitted light L1 from the main surface 21 of the base 20. It is different from the light-emitting device 10 according to Embodiment 1 in that The light-emitting device according to the present embodiment will be described below with reference to FIGS. 7 and 8, focusing on differences from the light-emitting device 10 according to the first embodiment.

FIG. 7 is a plan view showing a state in which the optical member 40 is removed from the light emitting device 110 according to this embodiment. FIG. 7 shows a plan view of the main surface 21 of the base 20 in plan view. In FIG. 7, the contours of the plurality of lens portions 43 are also shown by dashed lines. FIG. 8 is a cross-sectional view of light emitting device 110 according to this embodiment. FIG. 8 shows a cross section taken along line VIII-VIII in the X-axis direction of FIG. Note that FIG. 8 also shows a cross section of the optical member 40 .

The light emitting device 110 according to the present embodiment includes a base 20, a frame member 30, an optical member 40, a plurality of semiconductor laser chips 60, a plurality of submounts 53a to 53d, 54a to 54d, 55a to 55d, 56a-56d, 57a-57d and a plurality of mirrors 70 are provided.

In the present embodiment, as shown in FIG. 7, the relative positions of each of the plurality of mirrors 70 and each of the plurality of lens portions 43 in plan view of the main surface 21 of the base 20 are all the same. Same for mirror 70 . In the example of the light-emitting device 110 according to the present embodiment, in a plan view of the main surface 21, the center position 43C of each of the plurality of lens portions 43 and the center position of the reflecting surface 71 corresponding to each of the plurality of lens portions 43 71C matches. Also, the distances from the emission point E1 of the semiconductor laser chip 60 to the center position 71C of the reflecting surface 71 are all the same. In other words, the positional relationship between the semiconductor laser chip 60 and the mirror 70 is the same.

As shown in FIG. 8, the plurality of submounts 53a to 53d, 54a to 54d, 55a to 55d, 56a to 56d, and 57a to 57d are different from the submount 50 according to the first embodiment in that their heights are different. different. The direction of the optical axis of the reflected light L2 is parallel to the direction perpendicular to the main surface 21 because the angle of the reflecting surface with respect to the main surface is 45°. Absolute difference between the height from the main surface 21 to the emission point E1 of each of the plurality of semiconductor laser chips 60 and the average value of the heights from the main surface 21 to the emission point E1 of each of the plurality of semiconductor laser chips 60 The value increases as the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43 corresponding to each of the plurality of submounts among the plurality of lens portions 43 increases. Therefore, the distance of the optical axis of the semiconductor laser chip 60 from the main surface 21, that is, the position of the emitted light L1 on the reflecting surface 71 in the X-axis direction varies depending on the height of the submount.

Thus, similarly to the light emitting device 10 according to Embodiment 1, also in the light emitting device 110 according to the present embodiment, in a plan view of the main surface 21, the center position C1 of the emitted light L1 on the reflecting surface 71 and the plurality of The distance in the X-axis direction between the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 and the center position 43C of the lens portion 43 corresponds to the center position C1 of the emitted light L1 and the lens region 44 where the plurality of lens portions 43 are arranged. increases as the distance in the X-axis direction from the center position 44C increases. Therefore, the position of the reflected light L2 incident on each of the plurality of lens portions 43 according to the present embodiment is the same as in the first embodiment in the X-axis direction, and the output light L3 is reflected in the lens area 44 in the X-axis direction. refracts toward the center of On the other hand, there is no bending in the Y-axis direction. Here, as shown in FIG. 7, the direction of the optical axis of each output light L3 is generally directed to the central position of the lens region 44 in the X-axis direction in a plan view, but it is not necessarily strictly directed. It doesn't have to be.

Therefore, in the light-emitting device 110 according to the present embodiment as well, the plurality of output lights L3 can be focused on the predetermined surface area A1 having an area smaller than that of the lens area 44 without arranging a condenser lens.

Here, since the absolute value of the difference from the average height is proportional to De, the optical axes of all the output light beams L3 can be condensed at approximately one point. In the Y-axis direction, as in the first embodiment, the center position of the emitted light L1 on the reflecting surface 71 and the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 among the plurality of lens portions 43 By increasing the distance in the Y-axis direction as the distance in the Y-axis direction between the center position C1 of the emitted light L1 and the center position 44C of the lens region 44 in which the plurality of lens portions 43 are arranged increases ( (not shown), a plurality of output light beams L3 can be condensed on a predetermined surface region A1 having an area smaller than that of the lens region 44 without arranging a condensing lens. Furthermore, when the distance from the position of the emission point E1 of the semiconductor laser chip 60 in plan view to the center position 71C of the reflecting surface 71 is all the same, the main surface 21 of the base 20 parallel to the emitted light L1 and the reflecting surface 71 is 45°, even if the height from the main surface 21 to the position of the emission point E1 of the semiconductor laser chip 60 changes, the emission from the emission point E1 of the semiconductor laser chip 60 on the reflecting surface 71 The sum of the distance to the center position of the emitted light L1 and the distance from the center position of the emitted light L1 on the reflecting surface 71 to the lens portion 43 is constant, and the height from the main surface 21 to the position of the emission point E1 of the semiconductor laser chip 60 is constant. It is possible to greatly reduce the influence of the light intensity on the convergence state of the output light L3.

Further, in light-emitting device 110 according to the present embodiment and light-emitting devices 210 to 710 in all other embodiments described later, each of the plurality of semiconductor laser chips 60 is mounted on main surface 21 and , the same effect of improving heat dissipation characteristics as the light emitting device 10 according to the first embodiment can be obtained.

(Embodiment 3)
A light-emitting device according to Embodiment 3 will be described. In the light emitting device according to the present embodiment, the height of the optical axis of the emitted light L1 from the main surface 21 is the same for all the semiconductor laser chips 60, and the height of the reflecting surface 71 from the main surface 21 is changed. It differs from the light emitting device 110 according to Embodiment 2 in that the distance between the emission point E1 and the center position 71C of the reflecting surface 71 is changed in plan view. The light-emitting device according to the present embodiment will be described below with reference to FIGS. 9 and 10, focusing on differences from the light-emitting device 110 according to the second embodiment.

FIG. 9 is a plan view showing a state in which the optical member 40 is removed from the light emitting device 210 according to this embodiment. FIG. 9 shows a plan view of the main surface 21 of the base 20 in plan view. In FIG. 9, the contours of the plurality of lens portions 43 are also shown by dashed lines. FIG. 10 is a cross-sectional view of light emitting device 210 according to this embodiment. FIG. 10 shows a cross section along line XX of FIG. Note that FIG. 10 also shows a cross section of the optical member 40 .

A light emitting device 210 according to the present embodiment includes a base 20, a frame member 30, an optical member 40, a plurality of semiconductor laser chips 60, a plurality of submounts 50, a plurality of mirrors 73a-73d, 74a- 74d, 75a-75d, 76a-76d, 77a-77d.

The multiple submounts 50 according to the present embodiment have the same configuration as the multiple submounts 50 according to the first embodiment. Therefore, the distances of the optical axes of the semiconductor laser chips 60 mounted on the plurality of submounts 50 from the main surface 21 are all the same.

Each of the plurality of mirrors 73a-73d, 74a-74d, 75a-75d, 76a-76d, and 77a-77d has a reflecting surface 71, like mirror 70 according to the second embodiment. As shown in FIG. 9, in a plan view of the main surface 21 of the base 20, the relative positions of each of the plurality of mirrors and each of the plurality of lens portions 43 are the same for all mirrors. In the example of the light-emitting device 210 according to the present embodiment, in a plan view of the main surface 21, the center position 43C of each of the plurality of lens portions 43 and the center position of the reflecting surface 71 corresponding to each of the plurality of lens portions 43 71C matches.

As shown in FIG. 10, the plurality of mirrors 70 according to the first embodiment differs in that the heights of the central position 71C of the reflecting surface 71 from the main surface 21 are not the same. different from The direction of the optical axis of the reflected light L2 is parallel to the direction perpendicular to the main surface 21 because the angle of the reflecting surface 71 with respect to the main surface 21 is 45°. The absolute value of the difference between the height from the main surface 21 to the center position 71C of the reflecting surface 71 and the average value of the heights from the main surface 21 to the center position 71C of the reflecting surface 71 for a plurality of mirrors is the lens area. As the distance from the central position 44C of the lens 44 to the central position 43C of the lens section 43 corresponding to each of the plurality of mirrors among the plurality of lens sections 43 increases. Therefore, the position of the emitted light L1 on the reflecting surface 71 in the X-axis direction differs depending on the height of the central position 71C of the reflecting surface 71 from the main surface 21 . Thus, similarly to the light emitting device 10 according to Embodiment 1, in the light emitting device 210 according to the present embodiment as well, in a plan view of the main surface 21, the center position C1 of the emitted light L1 on the reflecting surface 71 and the plurality of The distance between the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 and the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 is the center position C1 of the emitted light L1 and the center position 44C of the lens area 44 where the plurality of lens portions 43 are arranged. increases as the distance from Therefore, the position of the reflected light L2 incident on each of the plurality of lens portions 43 according to the present embodiment is the same as in the first embodiment in the X-axis direction, and the output light L3 is reflected in the lens area 44 in the X-axis direction. refracts toward the center of On the other hand, there is no bending in the Y-axis direction. Here, as shown in FIG. 9, the direction of the optical axis of each output light L3 is generally directed to the central position of the lens region 44 in the X-axis direction in a plan view, but it is not necessarily strictly directed. It doesn't have to be. Therefore, in the light-emitting device 210 according to the present embodiment as well, the plurality of output lights L3 can be condensed onto the predetermined surface area A1 having an area smaller than that of the lens area 44 without arranging a condensing lens.

In the third embodiment, the absolute value of the difference from the average height of the reflecting surface 71 to the center position 71C is proportional to De, so that the optical axis of all the output light beams L3 is approximately 1 or 1. can be collected in place. In addition, since the angle formed by the emitted light L1 and the reflecting surface 71 is 45°, the emitted light L1 on the reflecting surface 71 is equal to the amount of change in height from the main surface 21 to the center position 71C of the reflecting surface 71. The distance from the center position of the to the lens portion 43 is shortened. Therefore, as shown in FIG. 10, by increasing the distance from the emitting point E1 of the semiconductor laser chip 60 to the center position 71C of the reflecting surface 71 by the same amount, the distance from the emitting point E1 of the semiconductor laser chip 60 to the center position of the reflecting surface 71 The sum of the distance to 71C and the distance from the main surface 21 to the center position 71C of the reflecting surface 71 can be made constant. As a result, the effect of the amount of change in height from the main surface 21 to the center position 71C of the reflecting surface 71 on the convergence state of the output light L3 can be greatly reduced. In the Y-axis direction, as in the first embodiment, the center position of the emitted light L1 on the reflecting surface 71 and the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 among the plurality of lens portions 43 By increasing the distance in the Y-axis direction as the distance in the Y-axis direction between the center position C1 of the emitted light L1 and the center position 44C of the lens region 44 in which the plurality of lens portions 43 are arranged increases ( (not shown), a plurality of output light beams L3 can be condensed on a predetermined surface region A1 having an area smaller than that of the lens region 44 without arranging a condensing lens.

(Embodiment 4)
A light-emitting device according to Embodiment 4 will be described. The light emitting device according to the present embodiment differs from the light emitting device 10 according to Embodiment 1 mainly in that the direction of the optical axis of at least part of the reflected light L2 is different from the direction of the optical axis of the lens portion 43. differ. The light emitting device according to the present embodiment will be described below with reference to FIGS. 11 and 12, focusing on differences from the light emitting device 10 according to the first embodiment.

FIG. 11 is a plan view showing a state in which the optical member 40 is removed from the light emitting device 310 according to this embodiment. FIG. 11 shows a plan view of the main surface 21 of the base 20 in plan view. In FIG. 11, the contours of the plurality of lens portions 43 are also shown by dashed lines. FIG. 12 is a cross-sectional view of light emitting device 310 according to this embodiment. FIG. 12 shows a cross section along line XII-XII of FIG. Note that FIG. 12 also shows a cross section of the optical member 40 .

A light emitting device 310 according to the present embodiment includes a base 20, a frame member 30, an optical member 40, a plurality of semiconductor laser chips 60, a plurality of submounts 50, a plurality of mirrors 373a to 373d, 374a to 374d, 375a-375d, 376a-376d, 377a-377d. As shown in FIG. 11, in a plan view of the main surface 21, the direction perpendicular to the reflecting surface 71 of each mirror is projected onto the main surface 21 (for example, the direction of the dashed arrow 71D shown in the mirror 374b in FIG. 11). ) is a line connecting the center position 71C of the reflecting surface 71 and the center position 44C of the lens region 44 (for example, the center position 44C of the lens region 44 shown in FIG. 11 and the center position 71C of the reflecting surface 71 of the mirror 374b). Each mirror is arranged so as to be in a direction parallel to a two-dot chain line connecting The direction of the optical axis of the emitted light L1 from each semiconductor laser chip 60 is such that the direction perpendicular to the reflection surface 71 on which the emitted light L1 is incident coincides with the direction projected onto the main surface 21. and a submount 50 are arranged.

Each of the plurality of mirrors according to the present embodiment has a reflecting surface 71 like mirror 70 according to the first embodiment. As shown in FIG. 12, the plurality of mirrors according to the present embodiment are the same as those in the first embodiment in that the optical axis of the reflected light L2 passes through the optical center of the lens portion 43. The tilt differs from the mirror 70 according to the first embodiment. In the present embodiment, the angle formed by the direction Dm perpendicular to the main surface 21 and the direction D71 perpendicular to the reflecting surface 71 (see the angle θr at the mirror 375a in FIG. 12) and the average of the angles formed by the plurality of mirrors The absolute value of the difference increases as the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 among the plurality of lens portions 43 increases. As a result, the angle formed by the direction of the optical axis of the reflected light L2 and the direction perpendicular to the main surface 21 (or the direction of the optical axis of the lens portion 43) (see angle θ2 in FIG. 12) is the center position of the lens region 44. It increases as the distance from 44C to the center position 43C of the lens portion 43 that receives the reflected light L2 among the plurality of lens portions 43 increases. In this embodiment, as shown in FIG. 12, the optical axis of the reflected light L2 passes through the center position (optical center) of the lens portion 43, so that the optical axis of the lens portion 43 and the optical axis of the reflected light L2 The reflected light L2 and the output light L3 propagate in the same direction even if there is a deviation.

Therefore, the optical axis of the output light L3 is tilted with respect to the optical axis of the lens portion 43 without refracting the optical axis of the reflected light L2 by the lens portion 43, and the output light L3 is focused on the predetermined surface area A1. can. As described above, in the present embodiment, the optical axis of the reflected light L2 does not need to be refracted by the lens portion 43, so that the reflected light L2 can enter the vicinity of the optical axis of the lens portion 43. Therefore, since the coma aberration of the output light L3 can be reduced, distortion of the profile of the output light L3 in the predetermined surface area A1 can be suppressed. That is, the output light L3 can be reliably focused on the predetermined surface area A1.

Here, the absolute value of the difference from the average value of the formed angles is proportional to the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43, so that the optical axis of all the output light L3 is It can be collected in almost one place. Further, as shown in FIG. 11, the directions of the optical axes of the reflected light beams L2 and the output light beams L3 are generally directed toward the central position of the lens area 44 in plan view, but they are not necessarily strictly aligned. It does not have to be facing the center position.

Further, as shown in FIG. 11, the angle formed by the direction of projection of the direction perpendicular to the reflecting surface 71 onto the main surface 21 and the incident direction of the emitted light L1 onto the reflecting surface 71 is the same angle. In this embodiment, the angle is 0°. By making the angles the same, it is possible to standardize the position inspection after mounting, and the inspection becomes simple.

Here, the sum of the distance from the emission point E1 of the semiconductor laser chip 60 to the central position of the emitted light L1 on the reflecting surface 71 and the distance from the central position of the emitted light L1 on the reflecting surface 71 to the lens portion 43 is constant. By arranging the semiconductor laser chip 60 so that the angle of the reflection surface 71 changes, the influence of the change in the angle of the reflection surface 71 on the convergence state of each output light L3 can be greatly reduced.

(Embodiment 5)
A light-emitting device according to Embodiment 5 will be described. The light-emitting device according to this embodiment differs from the light-emitting device 310 according to the fourth embodiment in the configuration of the plurality of mirrors. The light emitting device according to the present embodiment will be described below with reference to FIGS. 13 and 14, focusing on differences from the light emitting device 310 according to the fourth embodiment.

FIG. 13 is a plan view showing a state in which the optical member 40 is removed from the light emitting device 410 according to this embodiment. FIG. 13 shows a plan view of the main surface 21 of the base 20 in plan view. In FIG. 13, the contours of the plurality of lens portions 43 are shown together with dashed lines. FIG. 14 is a cross-sectional view of light emitting device 410 according to this embodiment. FIG. 14 shows a cross section along line XIV-XIV in FIG. Note that FIG. 14 also shows a cross section of the optical member 40 .

Light emitting device 410 according to the present embodiment includes base 20 , frame member 30 , optical member 40 , multiple semiconductor laser chips 60 , multiple submounts 50 , and multiple mirrors 470 . In the present embodiment, light emitting device 410 further includes a plurality of supporting portions 83a-83d, 84a-84d, 85a-85d, 86a-86d, 87a-87d, as shown in FIG. Here, the support portion may be formed integrally with the base, or may be formed of separate members.

Each of the plurality of mirrors 470 is a plate-like element having a reflecting surface 71, as shown in FIG. In this embodiment, each of the plurality of mirrors 470 has a plate-like shape with the rectangular reflecting surface 71 as one main surface. In other words, each of the plurality of mirrors 470 has a cuboid shape. The plurality of mirrors 470 are respectively leaned against the plurality of supports 83a-83d, 84a-84d, 85a-85d, 86a-86d, 87a-87d. In addition, each of the plurality of mirrors 470 may be joined to the main surface 21 of the base 20 and the corresponding support portion with a joining material or the like.

Each of the plurality of support portions 83a-83d, 84a-84d, 85a-85d, 86a-86d, and 87a-87d shown in FIG. In the present embodiment, the plurality of supporting portions form steps with main surface 21 . In addition, the multiple supports have different dimensions. Specifically, as shown in FIG. 14, the height of the support portion from the main surface 21 (see height Hs of the support portion 85d shown in FIG. 14) and the height of the support portions at the height The absolute value (|Hs-Hsm|) of the difference from the average value (refer to the average value Hsm of the height of the supporting portion shown in FIG. 14) It increases as the distance to the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 of the mirror 470 supported by the supporting portion increases. Accordingly, as in the fourth embodiment, the difference between the angle (θr) formed by the direction perpendicular to the main surface 21 and the direction perpendicular to the reflecting surface 71 and the average value of the angles formed by the plurality of mirrors can be calculated. The absolute value increases as the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 among the plurality of lens portions 43 increases. Therefore, in the light emitting device 410 according to the present embodiment as well, the positional relationship among the emitted light L1 from the semiconductor laser chip 60, the reflected light L2 from the reflecting surface 71, and the output light L3 from the lens portion 43 is the same as in the fourth embodiment. , the same effect as in the fourth embodiment can be obtained. Here, the absolute value of the difference from the average value of the formed angles is proportional to the distance from the center position 44C of the lens area 44 to the center position 43C of the lens portion 43, so that the optical axis of all the output light L3 is approximately can be collected in one place. Furthermore, in the present embodiment, since the tilt angle of each of the plurality of mirrors 470 with respect to the main surface 21 of the base 20 can be adjusted, fine optical axis adjustment is possible. Moreover, since the structure of the plurality of mirrors 470 can be made common, the manufacturing of the plurality of mirrors 470 can be facilitated, and the cost required for the plurality of mirrors 470 can be reduced.

(Embodiment 6)
A light-emitting device according to Embodiment 6 will be described. The light-emitting device according to the present embodiment differs from the light-emitting device 310 according to the fourth embodiment mainly in the configuration of the multiple semiconductor laser chips 60 and the multiple mirrors 70 . The light-emitting device according to the present embodiment will be described below with reference to FIG. 15, focusing on differences from the light-emitting device 310 according to the fourth embodiment.

FIG. 15 is a plan view showing a state in which the optical member 40 is removed from the light emitting device 510 according to this embodiment. FIG. 15 shows a plan view of the main surface 21 of the base 20 in plan view. In FIG. 15, the contours of the plurality of lens portions 43 are shown together with dashed lines, and the optical axis of the reflected light L2 from the mirror 70 and the optical axis of the output light L3 are also shown.

Light emitting device 510 according to the present embodiment includes base 20 , frame member 30 , optical member 40 , multiple semiconductor laser chips 60 , multiple submounts 50 , and multiple mirrors 70 . The plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 are the plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 according to Embodiment 1, respectively, except for the arrangement. , has a configuration similar to that of the plurality of mirrors 70 .

In this embodiment, the angle of the reflecting surface 71 of the mirror 70 with respect to the main surface 21 of the base 20 is 45°. When the direction A (the direction of the dashed line in FIG. 15, i.e., the X-axis direction) in which the direction perpendicular to the reflecting surface 71 is projected onto the main surface 21 coincides with the optical axis of the emitted light L1, the reflected light L2 is projected onto the base 20. It proceeds in a direction B (Z-axis direction) perpendicular to the main surface 21 . If they do not match, if the vector of the emitted light L1 is decomposed into a direction A and a direction C (Y direction) orthogonal to the direction A in a plane parallel to the main surface 21, then the vector of the reflected light L2 is divided into the direction B and It will have a component with direction C. That is, in a plan view, the reflected light L2 faces the direction C (Y-axis direction).

In the present embodiment, in a plan view of the main surface 21 of the base 20, the direction perpendicular to the reflecting surface 71 of the mirror 70 is projected onto the main surface 21 of the base 20, and the emitted light from the semiconductor laser chip 60 The direction of the reflected light L2 is tilted with respect to the direction perpendicular to the main surface 21 by adjusting the angle formed by the direction of the optical axis of L1. Specifically, the direction perpendicular to the reflecting surface 71 is projected onto the main surface 21 (the dashed line direction shown in FIG. 15) and the direction of the emitted light L1 (the dashed line direction shown in FIG. 15). The formed angle increases as the distance from the central position 44C of the lens region 44 to the central position 43C of the lens portion 43 corresponding to the reflecting surface 71 among the plurality of lens portions 43 increases. As a result, the angle formed by the direction of the optical axis of the reflected light L2 and the direction perpendicular to the main surface 21 is shifted from the center position 44C of the lens region 44 to the position of the lens portion 43 that receives the reflected light L2 among the plurality of lens portions 43. It increases as the distance to the center position increases. Therefore, in the light-emitting device 510 according to the present embodiment as well as in the light-emitting device 310 according to the fourth embodiment, the angle formed by the direction of the optical axis of the reflected light L2 and the direction perpendicular to the main surface 21 is the lens region 44. As the distance from the central position 44C to the central position 43C of the lens portion 43 that receives the reflected light L2 among the plurality of lens portions 43 increases, the same condensing effect is achieved. In particular, as described in Embodiment 1, when the optical axis of the reflected light L2 passes through a position deviated from the center position 43C of the lens section, the output light L3 changes its direction toward the center position of the lens section. By properly arranging it, the output light L3 can be directed toward the central position 44C of the lens area 44 (see the arrow indicating the output light L3 in FIG. 15). In other words, a plurality of output lights L3 can be condensed on the predetermined surface area A1.

Here, since this angle is approximately proportional to the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43, the optical axes of all the output light L3 can be converged at approximately one point. .

Further, in the present embodiment, it is possible to use the same mirrors as the plurality of mirrors 70 . Therefore, the configuration of the light emitting device 510 can be simplified.

In the present embodiment, the direction perpendicular to the reflecting surface 71 of the mirror 70 is projected onto the main surface, which is the direction of the dashed line shown for each mirror 70 in FIG. (that is, the X-axis direction in FIG. 15). Since the orientations of the plurality of mirrors 70 can be unified in this manner, the plurality of mirrors 70 can be aligned. Therefore, mounting of the plurality of mirrors 70 can be facilitated.

Further, in the present embodiment, all the mirrors 70 have the same angle (45°) with respect to the main surface 21 in the direction perpendicular to the reflecting surface 71 . Since the same mirror can be used as the plurality of mirrors 70 in this manner, the configuration of the light emitting device 510 can be simplified. In addition, since the reflecting surfaces 71 of a plurality of mirrors arranged in a row can be set on the same plane, the plurality of mirrors can be replaced with one mirror connected in the row direction, further simplifying the configuration.

The position in the Y-axis direction shown in FIG. In the laser chip 60), the angle between the direction perpendicular to the reflecting surface 71 projected onto the main surface 21 and the direction of the emitted light L1 is all 0°, and the distance from the center position 44C of the lens region 44 is 0°. does not increase as does increase. A combination of such emitted light L1 and mirror 70 may be included in light emitting device 510 .

(Embodiment 7)
A light-emitting device according to Embodiment 7 will be described. The light-emitting device according to the present embodiment differs from the light-emitting device 510 according to the sixth embodiment mainly in the configuration of the plurality of semiconductor laser chips 60 and the plurality of mirrors 70 . The light-emitting device according to the present embodiment will be described below with reference to FIG. 16, focusing on differences from the light-emitting device 510 according to the sixth embodiment.

FIG. 16 is a plan view showing a state in which the optical member 40 is removed from the light emitting device 610 according to this embodiment. FIG. 16 shows a plan view of the main surface 21 of the base 20 in plan view. In FIG. 16, the contours of the plurality of lens portions 43 are shown together with dashed lines, and the optical axis of the reflected light L2 from the mirror 70 and the optical axis of the output light L3 are also shown.

A light emitting device 610 according to this embodiment includes a base 20 , a frame member 30 , an optical member 40 , a plurality of semiconductor laser chips 60 , a plurality of submounts 50 and a plurality of mirrors 70 . The plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 are the plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 according to Embodiment 1, respectively, except for the arrangement. , has a configuration similar to that of the plurality of mirrors 70 .

In the present embodiment, as in the sixth embodiment, in a plan view of the main surface 21 of the base 20, the direction perpendicular to the reflecting surface 71 of the mirror 70 is projected onto the main surface 21 of the base 20 (Fig. 16) and the direction of the optical axis of the emitted light L1 from the semiconductor laser chip 60 (the direction of the dashed line shown in FIG. 16). are inclined with respect to the direction perpendicular to the main surface 21 . In this embodiment, the direction perpendicular to the reflecting surface 71 of the mirrors 70 is changed according to the distance from the center position 44C of the lens region 44. FIG. Specifically, in a plan view of the main surface 21, a line connecting a direction perpendicular to the reflecting surface 71 projected onto the main surface 21 and a center position 71C of the reflecting surface 71 and a center position 44C of the lens region 44 increases as the distance from the central position 44C of the lens region 44 to the central position 71C of the reflecting surface 71 increases. As a result, the angle formed by the direction of the optical axis of the reflected light L2 and the direction perpendicular to the main surface 21 is shifted from the center position 44C of the lens region 44 to the position of the lens portion 43 that receives the reflected light L2 among the plurality of lens portions 43. It increases as the distance to the center position 43C increases. Therefore, since light emitting device 610 according to the present embodiment is similar to light emitting device 510 according to Embodiment 6, similar effects can be obtained.

Here, since this angle is approximately proportional to the distance from the center position 44C of the lens region 44 to the center position 71C of the reflecting surface 71, the optical axes of all the output light L3 can be converged at approximately one place. . Furthermore, the direction perpendicular to the direction perpendicular to the reflection surface 71 projected onto the main surface 21 in the main surface 21 faces the center position 44C of the lens region 44, and is reflected in the same manner as in the first embodiment. The center position 43C of the lens portion 43 may be located on the line segment connecting the center position of the emitted light L1 on the surface 71 and the center position 44C of the lens region 44 . This makes it possible to converge all the output light L3 on one point.

Further, in the present embodiment, it is possible to use the same mirrors as the plurality of mirrors 70 . Therefore, the configuration of the light emitting device 610 can be simplified.

In addition, in the present embodiment, the direction of the emitted light L1 is the same for all the plurality of semiconductor laser chips 60 (that is, the direction parallel to the X-axis direction in FIG. 15). As a result, the directions of the plurality of semiconductor laser chips 60 can be unified, so that the plurality of semiconductor laser chips 60 can be aligned. Therefore, mounting of the plurality of semiconductor laser chips 60 can be facilitated.

Further, in the present embodiment, all the mirrors 70 have the same angle (45°) with respect to the main surface 21 in the direction perpendicular to the reflecting surface 71 . Since the same mirror can be used as the plurality of mirrors 70 in this manner, the configuration of the light emitting device 610 can be simplified.

Note that four mirrors 70 whose position in the Y-axis direction shown in FIG. 16 is the same as the central position 44C of the lens region 44 (four mirrors 70 arranged in the third row from the top in FIG. 16). , the angle formed by the direction perpendicular to the reflecting surface 71 projected onto the main surface 21 and the line connecting the center position 71C of the reflecting surface 71 and the center position 44C of the lens region 44 is all 0°, It does not increase as the distance from the central position 44C of the lens area 44 to the central position 71C of the reflecting surface 71 increases. A combination of such emitted light L1 and mirror 70 may be included in light emitting device 610 .

(Embodiment 8)
A light-emitting device according to Embodiment 8 will be described. The light-emitting device according to this embodiment differs from the light-emitting device 510 according to the sixth embodiment mainly in the configuration of the optical members, the configuration of the plurality of semiconductor laser chips 60 and the plurality of mirrors 70 . The light emitting device according to this embodiment will be described below with reference to FIGS. 17 and 18, focusing on differences from the light emitting device 510 according to Embodiment 6. FIG.

FIG. 17 is a plan view showing a state in which the optical member 40 is removed from the light emitting device 710 according to this embodiment. FIG. 17 shows a plan view of the main surface 21 of the base 20 in plan view. In FIG. 17, the contours of the plurality of lens portions 743 are shown together with dashed lines, and the optical axis of the reflected light L2 from the mirror and the optical axis of the output light L3 are also shown. FIG. 18 is a schematic cross-sectional view of light emitting device 710 according to this embodiment. FIG. 18 shows a cross section along line XVIII--XVIII of FIG. Note that FIG. 18 also shows a cross section of the optical member 740 . FIG. 18 also schematically shows a semiconductor laser chip 60 and the like, which are not present in the cross section.

A light emitting device 710 according to this embodiment includes a base 20 , a frame member 30 , an optical member 740 , multiple semiconductor laser chips 60 , multiple submounts 50 , and multiple mirrors 70 . The plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 are the plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 according to Embodiment 1, respectively, except for the arrangement. , has a configuration similar to that of the plurality of mirrors 70 .

The optical member 740 has a plurality of lens portions 743 . The optical member 740 has a lens region 744 in which a plurality of lens portions 743 are arranged, as shown in FIG. The lens area 744 is, for example, an area surrounded by an envelope 744E of the lens portions 743 . The center position 744C of the lens area 744 is the center of gravity of the lens area 744. FIG.

The lens portion 743 is, for example, an aspherical lens such as a parabolic lens. In the present embodiment, the optical axis of lens portion 743 is inclined with respect to the direction perpendicular to main surface 21, as indicated by the dashed line in FIG. The magnitude of this tilt angle increases as the distance from the center position 744C of the lens region 744 to the lens portion 743 increases. That is, the angle formed by the direction of the optical axis of each of the plurality of lens portions 743 and the direction perpendicular to the main surface 21 extends from the center position 744C of the lens region 744 to the center position 743C of each of the plurality of lens portions 743. It increases as the distance increases. As a result, the direction and position of the optical axis of the reflected light L2 incident on the lens portion 743 are made substantially coincident with the direction and position of the optical axis of the lens portion 743, respectively, thereby concentrating the output light L3 on the predetermined surface region A1. can light. Further, by bringing the position of the optical axis of the reflected light L2 closer to the position of the optical axis of the lens part 743, the coma aberration in the lens part 743 can be reduced, thereby suppressing the distortion of the profile of the output light L3 in the predetermined surface area A1. can. That is, the output light L3 can be reliably focused on the predetermined surface area A1.

Also, the optical axis of each of the plurality of lens portions 743 may intersect the predetermined surface area A1. As a result, the direction and position of the optical axis of the reflected light L2 incident on the lens portion 743 are made substantially coincident with the direction and position of the optical axis of the lens portion 743, respectively, thereby concentrating the output light L3 on the predetermined surface region A1. can light.

Further, as shown in FIG. 17, in plan view of the main surface 21, the center position C1 of the emitted light L1 on the reflecting surface 71 corresponding to the center position 744C of the lens region 744 and each of the plurality of lens portions 743 and , there may be a point 743A on the surface of each of the plurality of lens portions 743 through which the optical axis of each of the plurality of lens portions 743 passes. As a result, the reflected light L2 from the reflecting surface 71 can be aligned with the optical axis of the lens portion 743, so that the component of the reflected light L2 that is lost due to deviation from the optical axis of the lens portion 743 can be reduced. becomes.

Further, the angle (angle θe shown in FIG. 18) formed between the optical axis direction of each of the plurality of lens portions 743 and the direction of the optical axis of the reflected light L2 incident on each of the plurality of lens portions 743 is the lens It may increase as the distance from the central position 744C of the region 744 to the central position 743C of each of the plurality of lens portions 743 increases. Since this configuration has the same positional relationship as the reflected light L2 and the lens portion 43 of the fourth embodiment, it has the same light condensing effect. In this embodiment, as shown in FIG. 18, reflected light L2 and output light L3 propagate in the same direction.

The profile of the output light L3 in the predetermined surface area A1 of the light emitting device 710 according to Embodiments 4, 5, 6 and 8 will be described with reference to FIG. FIG. 19 is a diagram showing a far-field image in which the profiles of all the output light L3 in the predetermined surface area A1 of the light emitting device 710 according to this embodiment are superimposed. In FIG. 19, the profile of each output light L3 is indicated by dashed lines.

As shown in FIG. 19, the far-field image obtained by superimposing the profiles of all the output lights L3 in the predetermined surface area A1 of the light emitting device 710 according to this embodiment is circular. It should be noted that the circular here is not limited to a perfect circle, and includes a substantially circular shape. For example, even when the contour of the far-field image deviates from the circle by 10% or less, the shape of the far-field image is also included in the circular shape.

Further, as shown in FIG. 19, the cross-sectional shape of the output light L3 has a major axis direction in the predetermined surface area A1. In FIG. 19, a portion in the longitudinal direction is indicated by a thick solid line. The longitudinal direction is evenly dispersed in all the output light L3. In other words, the long axis direction of all the output light L3 is not biased in a specific direction. This makes it easier to uniformize the light intensity distribution in the predetermined surface area A1. Therefore, it is possible to generate irradiation light with less unevenness in intensity distribution.

(Modified example, etc.)
As described above, the light emitting device according to the present disclosure has been described based on each embodiment, but the present disclosure is not limited to each of the above embodiments.

For example, in each of the above embodiments, each light-emitting device includes the frame member 30, but the frame member 30 is not an essential component of each light-emitting element. For example, each optical member of each light emitting device may have a portion corresponding to the frame member. Also, each optical member may be supported on the base 20 by a member other than the frame member 30 .

Also, the submount 50 of each light emitting device other than the second embodiment is not an essential component. The semiconductor laser chip 60 may be directly mounted on the base 20 . Thus, the semiconductor laser chip 60 may be mounted directly on the main surface 21 of the base 20 or via the submount 50 .

Moreover, in each of the embodiments described above, the plurality of semiconductor laser chips 60 all have the same configuration, but they may have different configurations.

Moreover, in the light emitting device 310 according to Embodiment 4, the direction perpendicular to the reflecting surface 71 projected onto the main surface 21 was not the same for all the mirrors, but may be the same. In this case, similarly to the light emitting device 510 according to the sixth embodiment, by varying the direction of the emitted light L1 for each semiconductor laser chip 60, the direction of the optical axis of the reflected light L2 is changed to that of the reflected light according to the fourth embodiment. It can be adjusted to be in the same direction as the optical axis of L2. In this case, the directions perpendicular to the reflecting surfaces 71 of the mirrors may also be adjusted as appropriate.

Further, in each of the light emitting devices according to Embodiments 1, 2, 3, and 7, by uniformly reducing the longitudinal direction of each output light by using a cylindrical lens, etc., the light emitting device 710 according to Embodiment 8 can be obtained. , a circular far-field image can be obtained.

In addition, it is realized by arbitrarily combining the constituent elements and functions of the above embodiments without departing from the scope of the present disclosure, as well as the forms obtained by applying various modifications that a person skilled in the art can think of for the above embodiments. Any form is also included in the present disclosure.

The light emitting device of the present disclosure can be applied to, for example, a light source for a projector as a light source with high output and high light density.

10, 110, 210, 310, 410, 510, 610, 710 Light emitting device 20 Base 21 Main surface 30 Frame member 40, 740 Optical member 43, 743 Lens section 43C, 44C, 71C, 743C, 744C, C1 Center position 44 , 744 lens regions 44E, 744E envelopes 50, 53a, 53b, 53c, 53d, 54a, 54b, 54c, 54d, 55a, 55b, 55c, 55d, 56a, 56b, 56c, 56d, 57a, 57b, 57c, 57d submount 51 mounting surface 52 mounting surface 60 semiconductor laser chip 77c, 77d, 373a, 373b, 373c, 373d, 374a, 374b, 374c, 374d, 375a, 375b, 375c, 375d, 376a, 376b, 376c, 376d, 377a, 377b, 377c, 377d, 470 mirror 71 reflecting surface 83a , 83b, 83c, 83d, 84a, 84b, 84c, 84d, 85a, 85b, 85c, 85d, 86a, 86b, 86c, 86d, 87a, 87b, 87c, 87d Support portion A1 Predetermined surface area E1 Output point L1 Output light L2 reflected light L3 output light

Claims (23)

a base having a main surface;
a plurality of semiconductor laser chips mounted on the main surface and having optical axes parallel to the main surface;
a plurality of mirrors, each having a reflecting surface for reflecting light emitted from each emission point of the plurality of semiconductor laser chips;
an optical member each having a plurality of lens portions that receive reflected light from the reflecting surfaces of the plurality of mirrors;
In a plan view of the main surface, the distance between the center position of the emitted light on the reflecting surface and the center position of the lens portion corresponding to the reflecting surface among the plurality of lens portions is equal to the center position of the emitted light. , increases as the distance from the center position of the lens area in which the plurality of lens units are arranged increases,
A light-emitting device in which the output light from each of the plurality of lens portions is irradiated to the inside of a predetermined surface region having an area smaller than that of the lens region. The light emitting device according to claim 1, wherein the output light is a focused beam. The distance between the center position of the reflective surface and the center position of the lens portion corresponding to the reflective surface among the plurality of lens portions in a plan view of the main surface is equal to the center position of the reflective surface and the center of the lens area. 3. The light-emitting device according to claim 1, wherein the light-emitting device increases as the distance from the position increases. an absolute value of a difference between a height from the main surface to the emission point of each of the plurality of semiconductor laser chips and an average value of heights from the main surface to the emission point of each of the plurality of semiconductor laser chips; increases as the distance from the center position of the lens region to the center position of the lens portion corresponding to the emission point among the plurality of lens portions increases. A light emitting device as described. The absolute value of the difference between the height from the main surface to the center position of the reflecting surface and the average value of the heights from the main surface to the center position of the reflecting surface for the plurality of mirrors is the lens area. The light emitting device according to any one of claims 1 to 4, wherein the distance from the center position to the center position of the lens portion corresponding to each of the plurality of mirrors among the plurality of lens portions increases as the distance increases. . The light emission according to claim 4 or 5, wherein in a plan view of the main surface, the center position of each of the plurality of lens portions and the center position of the reflecting surface corresponding to each of the plurality of lens portions match each other. Device. The angle formed by the direction of the optical axis of the reflected light and the direction perpendicular to the main surface is the distance from the center position of the lens region to the center position of the lens portion that receives the reflected light among the plurality of lens portions. The light-emitting device according to any one of claims 1 to 6, which increases as . The angle between the direction of projection of the direction perpendicular to the reflecting surface onto the main surface and the direction of the emitted light is the lens portion corresponding to the reflecting surface among the plurality of lens portions from the center position of the lens region. 8. The light-emitting device according to claim 7, wherein the distance to the central position of is increased. 9. The light emitting device according to claim 8, wherein a direction perpendicular to said reflecting surface is projected onto said main surface in all of said plurality of mirrors. 9. The light emitting device according to claim 8, wherein angles of the direction perpendicular to the reflecting surface with respect to the main surface are the same for all of the plurality of mirrors. In a plan view of the principal surface, an angle formed by a direction perpendicular to the reflecting surface projected onto the principal surface and a line connecting a center position of the reflecting surface and a center position of the lens region is the lens 8. The light emitting device according to claim 7, which increases as the distance from the central position of the region to the central position of the reflecting surface increases. 9. The light emitting device according to claim 8, wherein the angle of the direction perpendicular to the reflecting surface with respect to the main surface is the same for all of the plurality of mirrors. 12. The light emitting device according to claim 11, wherein the direction of the emitted light is the same for all of the plurality of semiconductor laser chips. The absolute value of the difference between the angle formed by the direction perpendicular to the main surface and the direction perpendicular to the reflecting surface and the average value of the angles formed by the plurality of mirrors is calculated from the center position of the lens area to the 8. The light emitting device according to claim 7, wherein the distance to the center position of the lens portion corresponding to the reflecting surface among the plurality of lens portions increases as the distance to the center position increases. 15. The light emitting device according to claim 14, wherein a direction obtained by projecting a direction perpendicular to said reflecting surface onto said main surface is the same direction for all of said plurality of mirrors. 15. The plurality of mirrors according to claim 14, wherein angles formed by a direction perpendicular to said reflecting surface projected onto said main surface and a direction of incidence of said emitted light on said reflecting surface are the same angle in all of said plurality of mirrors. luminous device. Further comprising a plurality of support portions arranged on the main surface,
The light-emitting device according to claim 14, wherein the plurality of mirrors are respectively leaned against a plurality of support portions. The angle formed by the direction of the optical axis of each of the plurality of lens portions and the direction perpendicular to the main surface increases as the distance from the center position of the lens region to the center position of each of the plurality of lens portions increases. 18. The light emitting device according to any one of claims 1 to 17, which increases in accordance with . The angle formed by the direction of the optical axis of each of the plurality of lens units and the direction of the optical axis of the reflected light incident on each of the plurality of lens units is an angle between the center position of the lens area and the direction of the optical axis of each of the plurality of lens units. 19. The light-emitting device according to claim 18, wherein the distance to the center position of each portion increases as the distance to the center position increases. The light emitting device according to claim 18, wherein the optical axis of each of the plurality of lens portions intersects with the predetermined surface area. In a plan view of the main surface, the plurality of lenses are arranged on a line segment connecting a center position of the lens region and a center position of the emitted light on the reflecting surface corresponding to each of the plurality of lens portions. 19. The light-emitting device according to claim 18, wherein the surface of each portion has a position of a point through which the optical axis of each of the plurality of lens portions passes. The light-emitting device according to any one of claims 1 to 21, wherein a far-field image obtained by superimposing all the output lights in the predetermined surface area is circular. 23. The light emitting device according to claim 22, wherein the cross-sectional shape of said output light has a long axis direction in said predetermined surface area, and said long axis direction is evenly dispersed in all of said output light.

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