JP2021111655A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP2021111655A JP2021111655A JP2020000963A JP2020000963A JP2021111655A JP 2021111655 A JP2021111655 A JP 2021111655A JP 2020000963 A JP2020000963 A JP 2020000963A JP 2020000963 A JP2020000963 A JP 2020000963A JP 2021111655 A JP2021111655 A JP 2021111655A
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- Prior art keywords
- lid
- semiconductor module
- sealing material
- case
- module according
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 239000003566 sealing material Substances 0.000 claims description 52
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000008393 encapsulating agent Substances 0.000 abstract description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000009545 invasion Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
Description
図1は、実施の形態1に係る半導体モジュールを示す断面図である。図2は、実施の形態1に係る半導体モジュールを示す上面図である。図1は図2のI−IIに沿った断面図である。図3は図2の破線で囲った部分を拡大した上面図である。
図7は、実施の形態2に係る半導体モジュールのフタを示す断面図である。図8は、実施の形態2に係る半導体モジュールを示す断面図である。本実施の形態では、フタ11の下面に中央部が封止材10に向かって突出した錘状の突出部14が設けられている。
図10は、実施の形態3に係る半導体モジュールのフタの下面側を示す斜視図である。図11は、実施の形態3に係る半導体モジュールのフタを示す上面図である。図12は図11のI−IIに沿った断面図である。図13は、実施の形態3に係る半導体モジュールのフタを示す側面図である。図14は、実施の形態3に係る半導体モジュールのフタを示す下面図である。
図15は、実施の形態4に係る半導体モジュールのフタを示す上面図である。図16は図15のI−IIに沿った断面図である。図17は、実施の形態4に係る半導体モジュールを示す断面図である。フタ11の下面に外周から中央に向けて凹むように錐状の凹部16が設けられている。凹部16の頂点にフタ11を厚み方向に貫通する穴17が設けられている。
図18は、実施の形態5に係る半導体モジュールのフタを示す上面図である。図19は図18のI−IIに沿った断面図である。図20は、実施の形態5に係る半導体モジュールを示す断面図である。錐状の凹部16と穴17がフタ11に2つ設けられている。
図21は、実施の形態6に係る半導体モジュールのフタを示す上面図である。図22は図21のI−IIに沿った断面図である。図23は、実施の形態6に係る半導体モジュールを示す断面図である。穴17は、フタ11の下面側の第1の穴17aと、第1の穴17aに対してフタ11の上面側に配置され第1の穴17aよりも開口面積が広い第2の穴17bとを有する。従って、穴17は、フタ11の上面側の開口面積がフタ11の下面側の開口面積よりも広い。なお、穴17は、開口面積が異なる2つの穴からなる構成に限らず、テーパー形状でもよい。
Claims (9)
- ケースと、
前記ケースの内部に設けられた半導体チップと、
前記ケースの内部に注入され前記半導体チップを封止する封止材と、
前記封止材の上面に接するように前記ケースの内部に設けられたフタとを備え、
前記フタの端部の上面側にテーパーが設けられ、
前記フタの前記端部の側面と前記ケースの内側面との間に隙間が設けられ、
前記隙間から前記テーパーに前記封止材が這い上がっていることを特徴とする半導体モジュール。 - 前記フタの下面に中央部が突出した錘状の突出部が設けられていることを特徴とする請求項1に記載の半導体モジュール。
- 前記フタの前記端部に向かって前記封止材が流れる流路が前記フタの下面に設けられていることを特徴とする請求項1又は2に記載の半導体モジュール。
- ケースと、
前記ケースの内部に設けられた半導体チップと、
前記ケースの内部に注入され前記半導体チップを封止する封止材と、
前記封止材の上面に接するように前記ケースの内部に設けられたフタとを備え、
前記フタの下面に錐状の凹部が設けられ、
前記凹部の頂点に前記フタを厚み方向に貫通する穴が設けられていることを特徴とする半導体モジュール。 - 前記フタに前記凹部と前記穴が複数設けられていることを特徴とする請求項4に記載の半導体モジュール。
- 前記穴は、前記フタの上面側の開口面積が前記フタの下面側の開口面積よりも広いことを特徴とする請求項4又は5に記載の半導体モジュール。
- 前記フタは透明であることを特徴とする請求項1〜6の何れか1項に記載の半導体モジュール。
- 前記封止材はエポキシ樹脂であることを特徴とする請求項1〜7の何れか1項に記載の半導体モジュール。
- 前記半導体チップはワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜8の何れか1項に記載の半導体モジュール。
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JP2020000963A JP7247124B2 (ja) | 2020-01-07 | 2020-01-07 | 半導体モジュール |
US16/934,413 US11587841B2 (en) | 2020-01-07 | 2020-07-21 | Semiconductor module |
DE102020122788.4A DE102020122788A1 (de) | 2020-01-07 | 2020-09-01 | Halbleitermodul |
CN202011621177.5A CN113161296A (zh) | 2020-01-07 | 2020-12-31 | 半导体模块 |
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CN113916068A (zh) * | 2021-12-13 | 2022-01-11 | 成都瑞迪威科技有限公司 | 一种弹载产品抗过载灌封工艺 |
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JP2017107915A (ja) * | 2015-12-07 | 2017-06-15 | 株式会社デンソー | 電子回路装置 |
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