JP5738226B2 - 電力用半導体装置モジュール - Google Patents
電力用半導体装置モジュール Download PDFInfo
- Publication number
- JP5738226B2 JP5738226B2 JP2012064757A JP2012064757A JP5738226B2 JP 5738226 B2 JP5738226 B2 JP 5738226B2 JP 2012064757 A JP2012064757 A JP 2012064757A JP 2012064757 A JP2012064757 A JP 2012064757A JP 5738226 B2 JP5738226 B2 JP 5738226B2
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- semiconductor device
- power semiconductor
- electrode layer
- insulating substrate
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- 239000004065 semiconductor Substances 0.000 title claims description 128
- 239000000758 substrate Substances 0.000 claims description 93
- 229910052782 aluminium Inorganic materials 0.000 claims description 68
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 68
- 229910000679 solder Inorganic materials 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 230000009467 reduction Effects 0.000 claims description 14
- 239000011156 metal matrix composite Substances 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 39
- 229910010271 silicon carbide Inorganic materials 0.000 description 39
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000005470 impregnation Methods 0.000 description 5
- -1 Al—SiC Chemical compound 0.000 description 4
- 102100031476 Cytochrome P450 1A1 Human genes 0.000 description 4
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- 101000941690 Homo sapiens Cytochrome P450 1A1 Proteins 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
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- 238000005304 joining Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
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- 239000000843 powder Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
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- H01L2924/11—Device type
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- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
- H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
- H01L2924/15156—Side view
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
<装置構成>
図1および図2を用いて、本発明に係る電力用半導体装置モジュールの実施の形態1について説明する。
次に、図2および図3を用いてベース板1の製造方法について説明する。ベース板1は、先に説明したようにSiCプリフォーム6に、アルミニウムを含浸することで得られるが、SiCプリフォーム6の製造方法や、アルミニウムの含浸方法については周知の技術を用いることができるので説明は省略する。
図4を用いて、本発明に係る電力用半導体装置モジュールの実施の形態2について説明する。図4は、実施の形態2の電力用半導体装置モジュール100Aの構成を示す断面図である。なお、図1に示した電力用半導体装置モジュール100と同一の構成については同一の符号を付し、重複する説明は省略する。なお、図4においてはベース板1Aと、絶縁基板2のみを示すものとし、発明との関係の薄いケースCS等の構成の図示は省略する。
図5を用いて、本発明に係る電力用半導体装置モジュールの実施の形態3について説明する。図5は、実施の形態3の電力用半導体装置モジュール100Bの構成を示す断面図である。なお、図1に示した電力用半導体装置モジュール100と同一の構成については同一の符号を付し、重複する説明は省略する。なお、図5においてはベース板1Bと、絶縁基板2のみを示すものとし、発明との関係の薄いケースCS等の構成の図示は省略する。
以上説明した実施の形態3の電力用半導体装置モジュール100Bにおいては、ベース板1Bに設けた通孔TH1に、絶縁基板2の下面電極層12Aに設けた凸部9Aが挿入され、凸部9Aの端面は、ベース板1Bの下主面において貫通孔TH1から露出する構成を有していたが、図7に示すような構成を採っても良い。
図8を用いて、本発明に係る電力用半導体装置モジュールの実施の形態4について説明する。図8は、実施の形態4の電力用半導体装置モジュール100Dの構成を示す断面図である。なお、図1に示した電力用半導体装置モジュール100と同一の構成については同一の符号を付し、重複する説明は省略する。なお、図8においてはベース板1Dと、絶縁基板2のみを示すものとし、発明との関係の薄いケースCS等の構成の図示は省略する。
図9を用いて、本発明に係る電力用半導体装置モジュールの実施の形態5について説明する。図9は、実施の形態5の電力用半導体装置モジュール100Eの構成を示す断面図である。なお、図1に示した電力用半導体装置モジュール100と同一の構成については同一の符号を付し、重複する説明は省略する。なお、図9においてはベース板1Eと、絶縁基板2のみを示すものとし、発明との関係の薄いケースCS等の構成の図示は省略する。
図10を用いて、本発明に係る電力用半導体装置モジュールの実施の形態6について説明する。図10は、実施の形態6の電力用半導体装置モジュール100Fの構成を示す断面図である。なお、図1に示した電力用半導体装置モジュール100と同一の構成については同一の符号を付し、重複する説明は省略する。なお、図10においてはベース板1Fと、絶縁基板2のみを示すものとし、発明との関係の薄いケースCS等の構成の図示は省略する。
以上説明した実施の形態6の電力用半導体装置モジュール100Fにおいては、ダイオードチップ4の直下に対応する部分での下面電極層12Dの厚さを薄くした構成を有していたが、図11に示すような構成を採っても良い。
図12および図13を用いて、本発明に係る電力用半導体装置モジュールの実施の形態7について説明する。図12は、実施の形態7の電力用半導体装置モジュール100Hの構成を示す断面図である。なお、図1に示した電力用半導体装置モジュール100と同一の構成については同一の符号を付し、重複する説明は省略する。なお、図12においてはベース板1Gと、絶縁基板2のみを示すものとし、発明との関係の薄いケースCS等の構成の図示は省略する。
Claims (5)
- ベース板と、
前記ベース板上に搭載された絶縁基板と、
前記絶縁基板上に搭載された電力用半導体装置と、を備え、
前記ベース板、前記絶縁基板および前記電力用半導体装置がモジュール化された電力用半導体装置モジュールであって、
前記絶縁基板は、第1の主面上に配設された第1の電極層と、
第2の主面上に配設された第2の電極層と、を有し、
前記電力用半導体装置は、前記第1の電極層上に接合され、
前記第2の電極層は、前記ベース板の第1の主面上に接合され、
前記電力用半導体装置の直下に対応する部分の前記ベース板に、熱抵抗を低減する熱抵抗低減部を備え、
前記熱抵抗低減部は、
前記ベース板の前記電力用半導体装置の直下に対応する部分にその一部が前記ベース板の前記第1の主面から垂直に突出するように埋め込まれた金属の熱伝導ブロックで構成され、
前記第2の電極層は、
前記電力用半導体装置の直下に対応する部分に設けられた凹部を有し、
前記絶縁基板は、
前記凹部に前記熱伝導ブロックの突出部分が挿入されるように前記ベース板上に搭載されることを特徴とする、電力用半導体装置モジュール。 - 前記熱伝導ブロックは、
その他方端面が前記ベース板の第2の主面と同一平面をなす場合に、一方端面が、前記第2の電極層と前記ベース板の第1の主面上とを接合する半田層の厚みと前記凹部の深さを足し合わせた高さに達する厚みを有する、請求項1記載の電力用半導体装置モジュール。 - ベース板と、
前記ベース板上に搭載された絶縁基板と、
前記絶縁基板上に搭載された電力用半導体装置と、を備え、
前記ベース板、前記絶縁基板および前記電力用半導体装置がモジュール化された電力用半導体装置モジュールであって、
前記絶縁基板は、第1の主面上に配設された第1の電極層と、
第2の主面上に配設された第2の電極層と、を有し、
前記電力用半導体装置は、前記第1の電極層上に接合され、
前記第2の電極層は、前記ベース板の第1の主面上に接合され、
前記電力用半導体装置の直下に対応する部分の前記ベース板に、熱抵抗を低減する熱抵抗低減部を備え、
前記ベース板は、
SiC多孔質成形体に、アルミニウムを含浸した金属基複合材料で構成され、
前記熱抵抗低減部は、
前記ベース板の前記電力用半導体装置の直下に対応する部分に設けられたアルミニウム層であって、
前記アルミニウム層は、
前記SiC多孔質成形体に設けた凹部に、前記ベース板の形成過程でアルミニウムが一杯に充填されて形成され、
前記凹部は、
前記SiC多孔質成形体の両主面に設けられる、ことを特徴とする、電力用半導体装置モジュール。 - ベース板と、
前記ベース板上に搭載された絶縁基板と、
前記絶縁基板上に搭載された電力用半導体装置と、を備え、
前記ベース板、前記絶縁基板および前記電力用半導体装置がモジュール化された電力用半導体装置モジュールであって、
前記絶縁基板は、第1の主面上に配設された第1の電極層と、
第2の主面上に配設された第2の電極層と、を有し、
前記電力用半導体装置は、前記第1の電極層上に接合され、
前記第2の電極層は、前記ベース板の第1の主面上に接合され、
前記電力用半導体装置の直下に対応する部分の前記第2の電極層に、熱抵抗を低減する熱抵抗低減部を備え、
前記熱抵抗低減部は、
前記第2の電極層の前記電力用半導体装置の直下に対応する部分から垂直に突出するように設けられた凸部で構成され、
前記ベース板は、
前記電力用半導体装置の直下に対応する部分に設けられた貫通孔を有し、
前記絶縁基板は、
前記貫通孔に前記凸部が挿入されるように前記ベース板上に搭載され、
前記凸部は、
前記ベース板の前記貫通孔に挿入された場合に、その端面が第2の主面と同一平面をなすように、前記第2の電極層と前記ベース板の第1の主面上とを接合する半田層の厚みと前記ベース板の厚みを足し合わせた高さを有する、ことを特徴とする、電力用半導体装置モジュール。 - ベース板と、
前記ベース板上に搭載された絶縁基板と、
前記絶縁基板上に搭載された電力用半導体装置と、を備え、
前記ベース板、前記絶縁基板および前記電力用半導体装置がモジュール化された電力用半導体装置モジュールであって、
前記絶縁基板は、第1の主面上に配設された第1の電極層と、
第2の主面上に配設された第2の電極層と、を有し、
前記電力用半導体装置は、前記第1の電極層上に接合され、
前記第2の電極層は、前記ベース板の第1の主面上に接合され、
前記電力用半導体装置の直下に対応する部分の前記第2の電極層の厚みは他の部分よりも厚く、
前記第1の電極層は、
前記電力用半導体装置の直下に対応する部分に、凹部を有する、ことを特徴とする、電力用半導体装置モジュール。
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JP2015167171A (ja) * | 2014-03-04 | 2015-09-24 | 三菱電機株式会社 | 半導体装置 |
JP6701701B2 (ja) * | 2015-12-04 | 2020-05-27 | 富士電機株式会社 | インバータ装置 |
US11476179B2 (en) * | 2016-10-25 | 2022-10-18 | Tesla, Inc. | Inverter |
WO2018154687A1 (ja) * | 2017-02-23 | 2018-08-30 | 三菱電機株式会社 | 半導体装置 |
JP6776953B2 (ja) * | 2017-03-07 | 2020-10-28 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板 |
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JP7367309B2 (ja) * | 2019-02-08 | 2023-10-24 | 富士電機株式会社 | 半導体モジュール、半導体装置及び半導体装置の製造方法 |
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