JP2021101471A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP2021101471A JP2021101471A JP2021027154A JP2021027154A JP2021101471A JP 2021101471 A JP2021101471 A JP 2021101471A JP 2021027154 A JP2021027154 A JP 2021027154A JP 2021027154 A JP2021027154 A JP 2021027154A JP 2021101471 A JP2021101471 A JP 2021101471A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- pressing portion
- small
- tool
- pressing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
への張り付きを防止できれば良く、小押圧部5の接触面積は、大押圧部4の接触面積の1%以下となるように設定されている。
2 支持具
3 押圧具
4 大押圧部
5 小押圧部
6 付勢体
7 真空槽
Claims (1)
- 基板を支持する支持具と、この支持具に対向配置され、前記基板を押圧する押圧具とを有し、前記支持具と前記押圧具とで前記基板を挟持する基板挟持装置であって、前記押圧具には、大押圧部と、この大押圧部より基板との接触面積が小さい小押圧部とが設けられ、前記大押圧部には、前記小押圧部を前記基板側に付勢する小押圧部付勢機構を備えたことを特徴とする基板挟持装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021027154A JP2021101471A (ja) | 2016-07-01 | 2021-02-24 | 成膜装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016131736A JP6843533B2 (ja) | 2016-07-01 | 2016-07-01 | 成膜装置及び成膜装置の制御方法 |
JP2021027154A JP2021101471A (ja) | 2016-07-01 | 2021-02-24 | 成膜装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016131736A Division JP6843533B2 (ja) | 2016-07-01 | 2016-07-01 | 成膜装置及び成膜装置の制御方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2021101471A true JP2021101471A (ja) | 2021-07-08 |
Family
ID=60944837
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016131736A Active JP6843533B2 (ja) | 2016-07-01 | 2016-07-01 | 成膜装置及び成膜装置の制御方法 |
JP2021027154A Pending JP2021101471A (ja) | 2016-07-01 | 2021-02-24 | 成膜装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016131736A Active JP6843533B2 (ja) | 2016-07-01 | 2016-07-01 | 成膜装置及び成膜装置の制御方法 |
Country Status (3)
Country | Link |
---|---|
JP (2) | JP6843533B2 (ja) |
KR (2) | KR102264459B1 (ja) |
CN (1) | CN107557747B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117448757B (zh) * | 2023-10-25 | 2024-05-17 | 安徽凤玻智能科技有限公司 | 一种low-e玻璃溅射镀膜生产线 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0637039A (ja) * | 1992-07-16 | 1994-02-10 | Fujitsu Ltd | スパッタ装置 |
JPH0936211A (ja) * | 1995-07-24 | 1997-02-07 | Yamaha Corp | クランプリング |
JP2007207632A (ja) * | 2006-02-03 | 2007-08-16 | Canon Inc | マスク成膜方法およびマスク成膜装置 |
JP2008007857A (ja) * | 2006-06-02 | 2008-01-17 | Sony Corp | アライメント装置、アライメント方法および表示装置の製造方法 |
JP2010086809A (ja) * | 2008-09-30 | 2010-04-15 | Canon Anelva Corp | 保持装置、マスクのアライメント方法、基板処理装置、電子放出素子ディスプレイの生産方法及び有機elディスプレイの生産方法 |
JP2011106017A (ja) * | 2009-11-20 | 2011-06-02 | Canon Inc | 押圧装置およびそれを備えた成膜装置、および成膜方法 |
JP2011233510A (ja) * | 2010-04-05 | 2011-11-17 | Canon Inc | 蒸着装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4553124B2 (ja) | 2004-12-16 | 2010-09-29 | 株式会社日立ハイテクノロジーズ | 真空蒸着方法及びelディスプレイ用パネル |
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2016
- 2016-07-01 JP JP2016131736A patent/JP6843533B2/ja active Active
-
2017
- 2017-06-15 KR KR1020170075926A patent/KR102264459B1/ko active IP Right Grant
- 2017-06-30 CN CN201710518669.3A patent/CN107557747B/zh active Active
-
2021
- 2021-02-24 JP JP2021027154A patent/JP2021101471A/ja active Pending
- 2021-06-07 KR KR1020210073416A patent/KR102355444B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0637039A (ja) * | 1992-07-16 | 1994-02-10 | Fujitsu Ltd | スパッタ装置 |
JPH0936211A (ja) * | 1995-07-24 | 1997-02-07 | Yamaha Corp | クランプリング |
JP2007207632A (ja) * | 2006-02-03 | 2007-08-16 | Canon Inc | マスク成膜方法およびマスク成膜装置 |
JP2008007857A (ja) * | 2006-06-02 | 2008-01-17 | Sony Corp | アライメント装置、アライメント方法および表示装置の製造方法 |
JP2010086809A (ja) * | 2008-09-30 | 2010-04-15 | Canon Anelva Corp | 保持装置、マスクのアライメント方法、基板処理装置、電子放出素子ディスプレイの生産方法及び有機elディスプレイの生産方法 |
JP2011106017A (ja) * | 2009-11-20 | 2011-06-02 | Canon Inc | 押圧装置およびそれを備えた成膜装置、および成膜方法 |
JP2011233510A (ja) * | 2010-04-05 | 2011-11-17 | Canon Inc | 蒸着装置 |
Also Published As
Publication number | Publication date |
---|---|
KR102355444B1 (ko) | 2022-01-24 |
CN107557747B (zh) | 2020-08-28 |
JP6843533B2 (ja) | 2021-03-17 |
JP2018003096A (ja) | 2018-01-11 |
KR102264459B1 (ko) | 2021-06-11 |
CN107557747A (zh) | 2018-01-09 |
KR20210071898A (ko) | 2021-06-16 |
KR20180003994A (ko) | 2018-01-10 |
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