JP2018003096A - 基板挟持装置、成膜装置及び成膜方法 - Google Patents
基板挟持装置、成膜装置及び成膜方法 Download PDFInfo
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- JP2018003096A JP2018003096A JP2016131736A JP2016131736A JP2018003096A JP 2018003096 A JP2018003096 A JP 2018003096A JP 2016131736 A JP2016131736 A JP 2016131736A JP 2016131736 A JP2016131736 A JP 2016131736A JP 2018003096 A JP2018003096 A JP 2018003096A
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- 238000000151 deposition Methods 0.000 title 2
- 230000008021 deposition Effects 0.000 title 1
- 238000003825 pressing Methods 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Chemical & Material Sciences (AREA)
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- Chemical Vapour Deposition (AREA)
Abstract
Description
2 支持具
3 押圧具
4 大押圧部
5 小押圧部
6 付勢体
7 真空槽
Claims (6)
- 基板を支持する支持具と、この支持具に対向配置され、前記基板を押圧する押圧具とを有し、前記支持具と前記押圧具とで前記基板を挟持する基板挟持装置であって、前記押圧具には、大押圧部と、この大押圧部より基板との接触面積が小さい小押圧部とが設けられ、前記大押圧部には、前記小押圧部を前記基板側に付勢する小押圧部付勢機構を備えたことを特徴とする基板挟持装置。
- 前記小押圧部付勢機構は、前記小押圧部を前記基板側に付勢する付勢体を有することを特徴とする請求項1に記載の基板挟持装置。
- 前記付勢体の一端側は前記小押圧部側に連結され、他端側は前記大押圧部側に連結されていることを特徴とする請求項2に記載の基板挟持装置。
- 前記小押圧部は、前記大押圧部による前記基板の押圧領域の内側を押圧するようにこの大押圧部に設けられていることを特徴とする請求項1〜3のいずれか1項に記載の基板挟持装置。
- 真空槽内に設けられた基板に成膜を行う成膜装置であって、請求項1〜4のいずれか1項に記載の基板挟持装置が設けられていることを特徴とする成膜装置。
- 基板に成膜を行う成膜方法であって、
基板を挟持する挟持工程と、
前記挟持工程で挟持された前記基板を挟持しない解放状態とする解放工程とを有し、
前記挟持工程は、基板を支持する支持具と、この支持具に対向配置され、前記基板を押圧する、大押圧部及びこの大押圧部より基板との接触面積が小さい小押圧部を有する押圧具とから成り、前記支持具と前記押圧具とで前記基板を挟持する基板挟持装置を用いて行い、
前記解放工程は、前記押圧具の前記大押圧部による基板の押圧を解除した後、前記小押圧部による基板の押圧を解除することで行うことを特徴とする成膜方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016131736A JP6843533B2 (ja) | 2016-07-01 | 2016-07-01 | 成膜装置及び成膜装置の制御方法 |
KR1020170075926A KR102264459B1 (ko) | 2016-07-01 | 2017-06-15 | 기판 협지 장치, 성막 장치 및 성막 방법 |
CN201710518669.3A CN107557747B (zh) | 2016-07-01 | 2017-06-30 | 成膜装置及成膜装置的控制方法 |
JP2021027154A JP2021101471A (ja) | 2016-07-01 | 2021-02-24 | 成膜装置 |
KR1020210073416A KR102355444B1 (ko) | 2016-07-01 | 2021-06-07 | 기판 협지 장치, 성막 장치 및 성막 방법 |
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JP2016131736A JP6843533B2 (ja) | 2016-07-01 | 2016-07-01 | 成膜装置及び成膜装置の制御方法 |
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JP2021027154A Division JP2021101471A (ja) | 2016-07-01 | 2021-02-24 | 成膜装置 |
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JP2018003096A true JP2018003096A (ja) | 2018-01-11 |
JP6843533B2 JP6843533B2 (ja) | 2021-03-17 |
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JP2016131736A Active JP6843533B2 (ja) | 2016-07-01 | 2016-07-01 | 成膜装置及び成膜装置の制御方法 |
JP2021027154A Pending JP2021101471A (ja) | 2016-07-01 | 2021-02-24 | 成膜装置 |
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JP2021027154A Pending JP2021101471A (ja) | 2016-07-01 | 2021-02-24 | 成膜装置 |
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KR (2) | KR102264459B1 (ja) |
CN (1) | CN107557747B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117448757A (zh) * | 2023-10-25 | 2024-01-26 | 安徽凤玻智能科技有限公司 | 一种low-e玻璃溅射镀膜生产线 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0637039A (ja) * | 1992-07-16 | 1994-02-10 | Fujitsu Ltd | スパッタ装置 |
JPH0936211A (ja) * | 1995-07-24 | 1997-02-07 | Yamaha Corp | クランプリング |
JP2008007857A (ja) * | 2006-06-02 | 2008-01-17 | Sony Corp | アライメント装置、アライメント方法および表示装置の製造方法 |
JP2011233510A (ja) * | 2010-04-05 | 2011-11-17 | Canon Inc | 蒸着装置 |
Family Cites Families (4)
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JP4553124B2 (ja) | 2004-12-16 | 2010-09-29 | 株式会社日立ハイテクノロジーズ | 真空蒸着方法及びelディスプレイ用パネル |
JP4773834B2 (ja) * | 2006-02-03 | 2011-09-14 | キヤノン株式会社 | マスク成膜方法およびマスク成膜装置 |
JP2010086809A (ja) * | 2008-09-30 | 2010-04-15 | Canon Anelva Corp | 保持装置、マスクのアライメント方法、基板処理装置、電子放出素子ディスプレイの生産方法及び有機elディスプレイの生産方法 |
JP2011106017A (ja) * | 2009-11-20 | 2011-06-02 | Canon Inc | 押圧装置およびそれを備えた成膜装置、および成膜方法 |
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- 2016-07-01 JP JP2016131736A patent/JP6843533B2/ja active Active
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2017
- 2017-06-15 KR KR1020170075926A patent/KR102264459B1/ko active IP Right Grant
- 2017-06-30 CN CN201710518669.3A patent/CN107557747B/zh active Active
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2021
- 2021-02-24 JP JP2021027154A patent/JP2021101471A/ja active Pending
- 2021-06-07 KR KR1020210073416A patent/KR102355444B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0637039A (ja) * | 1992-07-16 | 1994-02-10 | Fujitsu Ltd | スパッタ装置 |
JPH0936211A (ja) * | 1995-07-24 | 1997-02-07 | Yamaha Corp | クランプリング |
JP2008007857A (ja) * | 2006-06-02 | 2008-01-17 | Sony Corp | アライメント装置、アライメント方法および表示装置の製造方法 |
JP2011233510A (ja) * | 2010-04-05 | 2011-11-17 | Canon Inc | 蒸着装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117448757A (zh) * | 2023-10-25 | 2024-01-26 | 安徽凤玻智能科技有限公司 | 一种low-e玻璃溅射镀膜生产线 |
CN117448757B (zh) * | 2023-10-25 | 2024-05-17 | 安徽凤玻智能科技有限公司 | 一种low-e玻璃溅射镀膜生产线 |
Also Published As
Publication number | Publication date |
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KR102355444B1 (ko) | 2022-01-24 |
JP2021101471A (ja) | 2021-07-08 |
CN107557747B (zh) | 2020-08-28 |
JP6843533B2 (ja) | 2021-03-17 |
KR102264459B1 (ko) | 2021-06-11 |
CN107557747A (zh) | 2018-01-09 |
KR20210071898A (ko) | 2021-06-16 |
KR20180003994A (ko) | 2018-01-10 |
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