KR102264459B1 - 기판 협지 장치, 성막 장치 및 성막 방법 - Google Patents

기판 협지 장치, 성막 장치 및 성막 방법 Download PDF

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Publication number
KR102264459B1
KR102264459B1 KR1020170075926A KR20170075926A KR102264459B1 KR 102264459 B1 KR102264459 B1 KR 102264459B1 KR 1020170075926 A KR1020170075926 A KR 1020170075926A KR 20170075926 A KR20170075926 A KR 20170075926A KR 102264459 B1 KR102264459 B1 KR 102264459B1
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KR
South Korea
Prior art keywords
substrate
pressing
tool
pressure
support
Prior art date
Application number
KR1020170075926A
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English (en)
Korean (ko)
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KR20180003994A (ko
Inventor
노부아키 시오이리
Original Assignee
캐논 톡키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 캐논 톡키 가부시키가이샤 filed Critical 캐논 톡키 가부시키가이샤
Publication of KR20180003994A publication Critical patent/KR20180003994A/ko
Priority to KR1020210073416A priority Critical patent/KR102355444B1/ko
Application granted granted Critical
Publication of KR102264459B1 publication Critical patent/KR102264459B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020170075926A 2016-07-01 2017-06-15 기판 협지 장치, 성막 장치 및 성막 방법 KR102264459B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210073416A KR102355444B1 (ko) 2016-07-01 2021-06-07 기판 협지 장치, 성막 장치 및 성막 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016131736A JP6843533B2 (ja) 2016-07-01 2016-07-01 成膜装置及び成膜装置の制御方法
JPJP-P-2016-131736 2016-07-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020210073416A Division KR102355444B1 (ko) 2016-07-01 2021-06-07 기판 협지 장치, 성막 장치 및 성막 방법

Publications (2)

Publication Number Publication Date
KR20180003994A KR20180003994A (ko) 2018-01-10
KR102264459B1 true KR102264459B1 (ko) 2021-06-11

Family

ID=60944837

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020170075926A KR102264459B1 (ko) 2016-07-01 2017-06-15 기판 협지 장치, 성막 장치 및 성막 방법
KR1020210073416A KR102355444B1 (ko) 2016-07-01 2021-06-07 기판 협지 장치, 성막 장치 및 성막 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020210073416A KR102355444B1 (ko) 2016-07-01 2021-06-07 기판 협지 장치, 성막 장치 및 성막 방법

Country Status (3)

Country Link
JP (2) JP6843533B2 (ja)
KR (2) KR102264459B1 (ja)
CN (1) CN107557747B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117448757B (zh) * 2023-10-25 2024-05-17 安徽凤玻智能科技有限公司 一种low-e玻璃溅射镀膜生产线

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008007857A (ja) * 2006-06-02 2008-01-17 Sony Corp アライメント装置、アライメント方法および表示装置の製造方法
JP2011233510A (ja) * 2010-04-05 2011-11-17 Canon Inc 蒸着装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637039A (ja) * 1992-07-16 1994-02-10 Fujitsu Ltd スパッタ装置
JPH0936211A (ja) * 1995-07-24 1997-02-07 Yamaha Corp クランプリング
JP4553124B2 (ja) 2004-12-16 2010-09-29 株式会社日立ハイテクノロジーズ 真空蒸着方法及びｅｌディスプレイ用パネル
JP4773834B2 (ja) * 2006-02-03 2011-09-14 キヤノン株式会社 マスク成膜方法およびマスク成膜装置
JP2010086809A (ja) * 2008-09-30 2010-04-15 Canon Anelva Corp 保持装置、マスクのアライメント方法、基板処理装置、電子放出素子ディスプレイの生産方法及び有機ｅｌディスプレイの生産方法
JP2011106017A (ja) * 2009-11-20 2011-06-02 Canon Inc 押圧装置およびそれを備えた成膜装置、および成膜方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008007857A (ja) * 2006-06-02 2008-01-17 Sony Corp アライメント装置、アライメント方法および表示装置の製造方法
JP2011233510A (ja) * 2010-04-05 2011-11-17 Canon Inc 蒸着装置

Also Published As

Publication number Publication date
KR102355444B1 (ko) 2022-01-24
JP2021101471A (ja) 2021-07-08
CN107557747B (zh) 2020-08-28
JP6843533B2 (ja) 2021-03-17
JP2018003096A (ja) 2018-01-11
CN107557747A (zh) 2018-01-09
KR20210071898A (ko) 2021-06-16
KR20180003994A (ko) 2018-01-10

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