JP2021056502A - 多層反射膜付き基板、反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 - Google Patents
多層反射膜付き基板、反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 Download PDFInfo
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Images
Classifications
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/030,208 US20210096456A1 (en) | 2019-09-30 | 2020-09-23 | Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device |
SG10202009397WA SG10202009397WA (en) | 2019-09-30 | 2020-09-24 | Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device |
KR1020200125586A KR20210038360A (ko) | 2019-09-30 | 2020-09-28 | 다층 반사막을 갖는 기판, 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법 |
TW109133780A TW202127136A (zh) | 2019-09-30 | 2020-09-29 | 附多層反射膜之基板、反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法 |
CN202011059191.0A CN112666788A (zh) | 2019-09-30 | 2020-09-30 | 带多层反射膜的基板、反射型掩模坯料、反射型掩模及制造方法、及半导体装置制造方法 |
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KR20230156410A (ko) | 2022-04-01 | 2023-11-14 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
WO2024034439A1 (ja) * | 2022-08-09 | 2024-02-15 | Agc株式会社 | Euvリソグラフィ用反射型マスクブランク及びその製造方法、並びに、euvリソグラフィ用反射型マスク及びその製造方法 |
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KR102649175B1 (ko) * | 2021-08-27 | 2024-03-20 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
WO2024024513A1 (ja) * | 2022-07-25 | 2024-02-01 | Agc株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
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TW202127136A (zh) | 2021-07-16 |
KR20210038360A (ko) | 2021-04-07 |
CN112666788A (zh) | 2021-04-16 |
SG10202009397WA (en) | 2021-04-29 |
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