JP2021052394A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2021052394A5 JP2021052394A5 JP2020157536A JP2020157536A JP2021052394A5 JP 2021052394 A5 JP2021052394 A5 JP 2021052394A5 JP 2020157536 A JP2020157536 A JP 2020157536A JP 2020157536 A JP2020157536 A JP 2020157536A JP 2021052394 A5 JP2021052394 A5 JP 2021052394A5
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- sensor device
- memory cell
- substrate
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2019-0117504 | 2019-09-24 | ||
| KR1020190117504A KR102718206B1 (ko) | 2019-09-24 | 2019-09-24 | 이미지 센서 장치 |
| US16/882,597 US11756968B2 (en) | 2019-09-24 | 2020-05-25 | Image sensor device |
| US16/882,597 | 2020-05-25 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021052394A JP2021052394A (ja) | 2021-04-01 |
| JP2021052394A5 true JP2021052394A5 (enExample) | 2023-09-20 |
| JP7760234B2 JP7760234B2 (ja) | 2025-10-27 |
Family
ID=72517128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020157536A Active JP7760234B2 (ja) | 2019-09-24 | 2020-09-18 | イメージセンサー装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11756968B2 (enExample) |
| EP (2) | EP3799425B1 (enExample) |
| JP (1) | JP7760234B2 (enExample) |
| KR (1) | KR102718206B1 (enExample) |
| CN (1) | CN112637524B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7280691B2 (ja) * | 2018-11-27 | 2023-05-24 | キヤノン株式会社 | 撮像素子およびその制御方法、及び撮像装置 |
| KR102718206B1 (ko) | 2019-09-24 | 2024-10-18 | 삼성전자주식회사 | 이미지 센서 장치 |
| EP3930312B8 (en) * | 2020-06-26 | 2023-10-25 | Alpsentek GmbH | Delta image sensor with digital pixel storage |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214559A (ja) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | 半導体集積回路装置 |
| US6922210B2 (en) | 1999-07-30 | 2005-07-26 | Pixim, Inc. | Memory updating for digital pixel sensors |
| US6975355B1 (en) * | 2000-02-22 | 2005-12-13 | Pixim, Inc. | Multiple sampling via a time-indexed method to achieve wide dynamic ranges |
| TW201101476A (en) | 2005-06-02 | 2011-01-01 | Sony Corp | Semiconductor image sensor module and method of manufacturing the same |
| US7244918B2 (en) | 2005-08-30 | 2007-07-17 | Micron Technology, Inc. | Method and apparatus providing a two-way shared storage gate on a four-way shared pixel |
| US7697364B2 (en) | 2005-12-01 | 2010-04-13 | Broadcom Corporation | Memory architecture having multiple partial wordline drivers and contacted and feed-through bitlines |
| US7924333B2 (en) | 2007-08-17 | 2011-04-12 | Aptina Imaging Corporation | Method and apparatus providing shared pixel straight gate architecture |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US8916947B2 (en) | 2010-06-08 | 2014-12-23 | Invisage Technologies, Inc. | Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode |
| US8729448B1 (en) | 2010-06-16 | 2014-05-20 | Drs Rsta, Inc. | System and method for an enhanced small pitch digital pixel array |
| EP2437484B1 (en) | 2010-10-01 | 2017-02-15 | Sony Semiconductor Solutions Corporation | Imaging device and camera system |
| JP5858695B2 (ja) | 2011-09-08 | 2016-02-10 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置の駆動方法 |
| US8773562B1 (en) | 2013-01-31 | 2014-07-08 | Apple Inc. | Vertically stacked image sensor |
| US9369648B2 (en) | 2013-06-18 | 2016-06-14 | Alexander Krymski | Image sensors, methods, and pixels with tri-level biased transfer gates |
| CN105981370B (zh) | 2014-02-07 | 2019-07-19 | 拉姆伯斯公司 | 馈通补偿图像传感器 |
| CN103945144B (zh) | 2014-04-14 | 2017-04-19 | 天津大学 | 采用多斜坡电压作参考电压的数字像素曝光方法 |
| KR102326607B1 (ko) * | 2014-07-14 | 2021-11-16 | 소니그룹주식회사 | 비교기, ad 변환기, 고체 촬상 장치, 전자 기기, 및 비교기의 제어 방법 |
| KR102270099B1 (ko) | 2014-12-08 | 2021-06-29 | 삼성전자주식회사 | 더미 패턴을 갖는 반도체 소자 및 그 제조방법 |
| JP6218799B2 (ja) | 2015-01-05 | 2017-10-25 | キヤノン株式会社 | 撮像素子及び撮像装置 |
| KR102621752B1 (ko) | 2017-01-13 | 2024-01-05 | 삼성전자주식회사 | Mram을 포함한 씨모스 이미지 센서 |
| JP2018117102A (ja) | 2017-01-20 | 2018-07-26 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
| US11004881B2 (en) * | 2018-04-03 | 2021-05-11 | Facebook Technologies, Llc | Global shutter image sensor |
| KR102718206B1 (ko) | 2019-09-24 | 2024-10-18 | 삼성전자주식회사 | 이미지 센서 장치 |
-
2019
- 2019-09-24 KR KR1020190117504A patent/KR102718206B1/ko active Active
-
2020
- 2020-05-25 US US16/882,597 patent/US11756968B2/en active Active
- 2020-09-14 EP EP20196076.2A patent/EP3799425B1/en active Active
- 2020-09-14 EP EP21203454.0A patent/EP3975550A1/en active Pending
- 2020-09-14 CN CN202010964195.7A patent/CN112637524B/zh active Active
- 2020-09-18 JP JP2020157536A patent/JP7760234B2/ja active Active
-
2023
- 2023-08-01 US US18/228,959 patent/US12342639B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2964983B2 (ja) | 三次元メモリモジュール及びそれを用いた半導体装置 | |
| JP4534132B2 (ja) | 積層型半導体メモリ装置 | |
| JP2021052394A5 (enExample) | ||
| US8120958B2 (en) | Multi-die memory, apparatus and multi-die memory stack | |
| US12342639B2 (en) | Image sensor device | |
| JP2007059026A5 (enExample) | ||
| US10937818B2 (en) | Solid state imaging device | |
| CN109688398B (zh) | 一种3d堆叠的图像传感器 | |
| US20190206819A1 (en) | Semiconductor memory chip, semiconductor memory package, and electronic system using the same | |
| KR20210010018A (ko) | 이미지 센싱 장치 | |
| US11532660B2 (en) | Photoelectric conversion device | |
| JP4160556B2 (ja) | 半導体集積回路 | |
| US9275687B2 (en) | Semiconductor chips | |
| JPS62208665A (ja) | 積層形半導体記憶装置 | |
| JP2004537904A5 (enExample) | ||
| US20240387462A1 (en) | Semiconductor device and semiconductor package including the same | |
| US9230653B2 (en) | Semiconductor memory device | |
| JP2871608B2 (ja) | 半導体記憶装置及びその製造方法 | |
| JP2002367385A5 (enExample) | ||
| WO2025100060A1 (ja) | 光検出器 | |
| JP2025079421A (ja) | 光検出器 | |
| JP2022113105A5 (enExample) | ||
| JPH03225697A (ja) | 半導体集積回路 | |
| JPH11317494A (ja) | 三次元メモリモジュ―ル及びそれを用いた半導体装置 | |
| CN113129941A (zh) | 一种半导体存储器件 |