CN112637524B - 图像传感器设备 - Google Patents

图像传感器设备 Download PDF

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Publication number
CN112637524B
CN112637524B CN202010964195.7A CN202010964195A CN112637524B CN 112637524 B CN112637524 B CN 112637524B CN 202010964195 A CN202010964195 A CN 202010964195A CN 112637524 B CN112637524 B CN 112637524B
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China
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region
word line
memory cell
photodetector
digital
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CN202010964195.7A
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English (en)
Chinese (zh)
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CN112637524A (zh
Inventor
金石山
徐珉雄
秋明来
李宗渊
崔珉准
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
CN202010964195.7A 2019-09-24 2020-09-14 图像传感器设备 Active CN112637524B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0117504 2019-09-24
KR1020190117504A KR102718206B1 (ko) 2019-09-24 2019-09-24 이미지 센서 장치

Publications (2)

Publication Number Publication Date
CN112637524A CN112637524A (zh) 2021-04-09
CN112637524B true CN112637524B (zh) 2025-02-25

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US (2) US11756968B2 (enExample)
EP (2) EP3799425B1 (enExample)
JP (1) JP7760234B2 (enExample)
KR (1) KR102718206B1 (enExample)
CN (1) CN112637524B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
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JP7280691B2 (ja) * 2018-11-27 2023-05-24 キヤノン株式会社 撮像素子およびその制御方法、及び撮像装置
KR102718206B1 (ko) 2019-09-24 2024-10-18 삼성전자주식회사 이미지 센서 장치
EP3930312B8 (en) * 2020-06-26 2023-10-25 Alpsentek GmbH Delta image sensor with digital pixel storage

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US7924333B2 (en) 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
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US8916947B2 (en) 2010-06-08 2014-12-23 Invisage Technologies, Inc. Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
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EP2437484B1 (en) 2010-10-01 2017-02-15 Sony Semiconductor Solutions Corporation Imaging device and camera system
JP5858695B2 (ja) 2011-09-08 2016-02-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
US8773562B1 (en) 2013-01-31 2014-07-08 Apple Inc. Vertically stacked image sensor
US9369648B2 (en) 2013-06-18 2016-06-14 Alexander Krymski Image sensors, methods, and pixels with tri-level biased transfer gates
CN105981370B (zh) 2014-02-07 2019-07-19 拉姆伯斯公司 馈通补偿图像传感器
CN103945144B (zh) 2014-04-14 2017-04-19 天津大学 采用多斜坡电压作参考电压的数字像素曝光方法
KR102326607B1 (ko) * 2014-07-14 2021-11-16 소니그룹주식회사 비교기, ａｄ 변환기, 고체 촬상 장치, 전자 기기, 및 비교기의 제어 방법
KR102270099B1 (ko) 2014-12-08 2021-06-29 삼성전자주식회사 더미 패턴을 갖는 반도체 소자 및 그 제조방법
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Also Published As

Publication number Publication date
EP3975550A1 (en) 2022-03-30
KR20210035950A (ko) 2021-04-02
JP2021052394A (ja) 2021-04-01
CN112637524A (zh) 2021-04-09
US20230378204A1 (en) 2023-11-23
US20210091129A1 (en) 2021-03-25
US11756968B2 (en) 2023-09-12
KR102718206B1 (ko) 2024-10-18
EP3799425A1 (en) 2021-03-31
EP3799425B1 (en) 2023-11-29
JP7760234B2 (ja) 2025-10-27
US12342639B2 (en) 2025-06-24

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