JP7760234B2 - イメージセンサー装置 - Google Patents

イメージセンサー装置

Info

Publication number
JP7760234B2
JP7760234B2 JP2020157536A JP2020157536A JP7760234B2 JP 7760234 B2 JP7760234 B2 JP 7760234B2 JP 2020157536 A JP2020157536 A JP 2020157536A JP 2020157536 A JP2020157536 A JP 2020157536A JP 7760234 B2 JP7760234 B2 JP 7760234B2
Authority
JP
Japan
Prior art keywords
memory cell
pixel
memory
digital
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020157536A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021052394A (ja
JP2021052394A5 (enExample
Inventor
石山 金
▲みん▼雄 徐
明來 秋
宗淵 李
▲みん▼準 崔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2021052394A publication Critical patent/JP2021052394A/ja
Publication of JP2021052394A5 publication Critical patent/JP2021052394A5/ja
Application granted granted Critical
Publication of JP7760234B2 publication Critical patent/JP7760234B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP2020157536A 2019-09-24 2020-09-18 イメージセンサー装置 Active JP7760234B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2019-0117504 2019-09-24
KR1020190117504A KR102718206B1 (ko) 2019-09-24 2019-09-24 이미지 센서 장치
US16/882,597 US11756968B2 (en) 2019-09-24 2020-05-25 Image sensor device
US16/882,597 2020-05-25

Publications (3)

Publication Number Publication Date
JP2021052394A JP2021052394A (ja) 2021-04-01
JP2021052394A5 JP2021052394A5 (enExample) 2023-09-20
JP7760234B2 true JP7760234B2 (ja) 2025-10-27

Family

ID=72517128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020157536A Active JP7760234B2 (ja) 2019-09-24 2020-09-18 イメージセンサー装置

Country Status (5)

Country Link
US (2) US11756968B2 (enExample)
EP (2) EP3799425B1 (enExample)
JP (1) JP7760234B2 (enExample)
KR (1) KR102718206B1 (enExample)
CN (1) CN112637524B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7280691B2 (ja) * 2018-11-27 2023-05-24 キヤノン株式会社 撮像素子およびその制御方法、及び撮像装置
KR102718206B1 (ko) 2019-09-24 2024-10-18 삼성전자주식회사 이미지 센서 장치
EP3930312B8 (en) * 2020-06-26 2023-10-25 Alpsentek GmbH Delta image sensor with digital pixel storage

Citations (2)

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WO2006129762A1 (ja) 2005-06-02 2006-12-07 Sony Corporation 半導体イメージセンサ・モジュール及びその製造方法
WO2016009832A1 (ja) 2014-07-14 2016-01-21 ソニー株式会社 比較器、ａｄ変換器、固体撮像装置、電子機器、および比較器の制御方法

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JPS61214559A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 半導体集積回路装置
US6922210B2 (en) 1999-07-30 2005-07-26 Pixim, Inc. Memory updating for digital pixel sensors
US6975355B1 (en) * 2000-02-22 2005-12-13 Pixim, Inc. Multiple sampling via a time-indexed method to achieve wide dynamic ranges
US7244918B2 (en) 2005-08-30 2007-07-17 Micron Technology, Inc. Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
US7697364B2 (en) 2005-12-01 2010-04-13 Broadcom Corporation Memory architecture having multiple partial wordline drivers and contacted and feed-through bitlines
US7924333B2 (en) 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8916947B2 (en) 2010-06-08 2014-12-23 Invisage Technologies, Inc. Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
US8729448B1 (en) 2010-06-16 2014-05-20 Drs Rsta, Inc. System and method for an enhanced small pitch digital pixel array
EP2437484B1 (en) 2010-10-01 2017-02-15 Sony Semiconductor Solutions Corporation Imaging device and camera system
JP5858695B2 (ja) 2011-09-08 2016-02-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
US8773562B1 (en) 2013-01-31 2014-07-08 Apple Inc. Vertically stacked image sensor
US9369648B2 (en) 2013-06-18 2016-06-14 Alexander Krymski Image sensors, methods, and pixels with tri-level biased transfer gates
CN105981370B (zh) 2014-02-07 2019-07-19 拉姆伯斯公司 馈通补偿图像传感器
CN103945144B (zh) 2014-04-14 2017-04-19 天津大学 采用多斜坡电压作参考电压的数字像素曝光方法
KR102270099B1 (ko) 2014-12-08 2021-06-29 삼성전자주식회사 더미 패턴을 갖는 반도체 소자 및 그 제조방법
JP6218799B2 (ja) 2015-01-05 2017-10-25 キヤノン株式会社 撮像素子及び撮像装置
KR102621752B1 (ko) 2017-01-13 2024-01-05 삼성전자주식회사 Mram을 포함한 씨모스 이미지 센서
JP2018117102A (ja) 2017-01-20 2018-07-26 ソニーセミコンダクタソリューションズ株式会社 半導体装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006129762A1 (ja) 2005-06-02 2006-12-07 Sony Corporation 半導体イメージセンサ・モジュール及びその製造方法
WO2016009832A1 (ja) 2014-07-14 2016-01-21 ソニー株式会社 比較器、ａｄ変換器、固体撮像装置、電子機器、および比較器の制御方法

Also Published As

Publication number Publication date
EP3975550A1 (en) 2022-03-30
CN112637524B (zh) 2025-02-25
KR20210035950A (ko) 2021-04-02
JP2021052394A (ja) 2021-04-01
CN112637524A (zh) 2021-04-09
US20230378204A1 (en) 2023-11-23
US20210091129A1 (en) 2021-03-25
US11756968B2 (en) 2023-09-12
KR102718206B1 (ko) 2024-10-18
EP3799425A1 (en) 2021-03-31
EP3799425B1 (en) 2023-11-29
US12342639B2 (en) 2025-06-24

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