KR102718206B1 - 이미지 센서 장치 - Google Patents

이미지 센서 장치 Download PDF

Info

Publication number
KR102718206B1
KR102718206B1 KR1020190117504A KR20190117504A KR102718206B1 KR 102718206 B1 KR102718206 B1 KR 102718206B1 KR 1020190117504 A KR1020190117504 A KR 1020190117504A KR 20190117504 A KR20190117504 A KR 20190117504A KR 102718206 B1 KR102718206 B1 KR 102718206B1
Authority
KR
South Korea
Prior art keywords
memory cells
photodetector
digital
region
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190117504A
Other languages
English (en)
Korean (ko)
Other versions
KR20210035950A (ko
Inventor
김석산
서민웅
추명래
이종연
최민준
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020190117504A priority Critical patent/KR102718206B1/ko
Priority to US16/882,597 priority patent/US11756968B2/en
Priority to CN202010964195.7A priority patent/CN112637524B/zh
Priority to EP20196076.2A priority patent/EP3799425B1/en
Priority to EP21203454.0A priority patent/EP3975550A1/en
Priority to JP2020157536A priority patent/JP7760234B2/ja
Publication of KR20210035950A publication Critical patent/KR20210035950A/ko
Priority to US18/228,959 priority patent/US12342639B2/en
Application granted granted Critical
Publication of KR102718206B1 publication Critical patent/KR102718206B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H01L27/14636—
    • H01L27/14609—
    • H01L27/14641—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
KR1020190117504A 2019-09-24 2019-09-24 이미지 센서 장치 Active KR102718206B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020190117504A KR102718206B1 (ko) 2019-09-24 2019-09-24 이미지 센서 장치
US16/882,597 US11756968B2 (en) 2019-09-24 2020-05-25 Image sensor device
EP20196076.2A EP3799425B1 (en) 2019-09-24 2020-09-14 Image sensor device
EP21203454.0A EP3975550A1 (en) 2019-09-24 2020-09-14 Image sensor device
CN202010964195.7A CN112637524B (zh) 2019-09-24 2020-09-14 图像传感器设备
JP2020157536A JP7760234B2 (ja) 2019-09-24 2020-09-18 イメージセンサー装置
US18/228,959 US12342639B2 (en) 2019-09-24 2023-08-01 Image sensor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190117504A KR102718206B1 (ko) 2019-09-24 2019-09-24 이미지 센서 장치

Publications (2)

Publication Number Publication Date
KR20210035950A KR20210035950A (ko) 2021-04-02
KR102718206B1 true KR102718206B1 (ko) 2024-10-18

Family

ID=72517128

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190117504A Active KR102718206B1 (ko) 2019-09-24 2019-09-24 이미지 센서 장치

Country Status (5)

Country Link
US (2) US11756968B2 (enExample)
EP (2) EP3799425B1 (enExample)
JP (1) JP7760234B2 (enExample)
KR (1) KR102718206B1 (enExample)
CN (1) CN112637524B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7280691B2 (ja) * 2018-11-27 2023-05-24 キヤノン株式会社 撮像素子およびその制御方法、及び撮像装置
KR102718206B1 (ko) 2019-09-24 2024-10-18 삼성전자주식회사 이미지 센서 장치
EP3930312B8 (en) * 2020-06-26 2023-10-25 Alpsentek GmbH Delta image sensor with digital pixel storage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016129327A (ja) 2015-01-05 2016-07-14 キヤノン株式会社 撮像素子及び撮像装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214559A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 半導体集積回路装置
US6922210B2 (en) 1999-07-30 2005-07-26 Pixim, Inc. Memory updating for digital pixel sensors
US6975355B1 (en) * 2000-02-22 2005-12-13 Pixim, Inc. Multiple sampling via a time-indexed method to achieve wide dynamic ranges
TW201101476A (en) 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
US7244918B2 (en) 2005-08-30 2007-07-17 Micron Technology, Inc. Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
US7697364B2 (en) 2005-12-01 2010-04-13 Broadcom Corporation Memory architecture having multiple partial wordline drivers and contacted and feed-through bitlines
US7924333B2 (en) 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8916947B2 (en) 2010-06-08 2014-12-23 Invisage Technologies, Inc. Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
US8729448B1 (en) 2010-06-16 2014-05-20 Drs Rsta, Inc. System and method for an enhanced small pitch digital pixel array
EP2437484B1 (en) 2010-10-01 2017-02-15 Sony Semiconductor Solutions Corporation Imaging device and camera system
JP5858695B2 (ja) 2011-09-08 2016-02-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
US8773562B1 (en) 2013-01-31 2014-07-08 Apple Inc. Vertically stacked image sensor
US9369648B2 (en) 2013-06-18 2016-06-14 Alexander Krymski Image sensors, methods, and pixels with tri-level biased transfer gates
CN105981370B (zh) 2014-02-07 2019-07-19 拉姆伯斯公司 馈通补偿图像传感器
CN103945144B (zh) 2014-04-14 2017-04-19 天津大学 采用多斜坡电压作参考电压的数字像素曝光方法
KR102326607B1 (ko) * 2014-07-14 2021-11-16 소니그룹주식회사 비교기, ａｄ 변환기, 고체 촬상 장치, 전자 기기, 및 비교기의 제어 방법
KR102270099B1 (ko) 2014-12-08 2021-06-29 삼성전자주식회사 더미 패턴을 갖는 반도체 소자 및 그 제조방법
KR102621752B1 (ko) 2017-01-13 2024-01-05 삼성전자주식회사 Mram을 포함한 씨모스 이미지 센서
JP2018117102A (ja) 2017-01-20 2018-07-26 ソニーセミコンダクタソリューションズ株式会社 半導体装置
US11004881B2 (en) * 2018-04-03 2021-05-11 Facebook Technologies, Llc Global shutter image sensor
KR102718206B1 (ko) 2019-09-24 2024-10-18 삼성전자주식회사 이미지 센서 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016129327A (ja) 2015-01-05 2016-07-14 キヤノン株式会社 撮像素子及び撮像装置

Also Published As

Publication number Publication date
EP3975550A1 (en) 2022-03-30
CN112637524B (zh) 2025-02-25
KR20210035950A (ko) 2021-04-02
JP2021052394A (ja) 2021-04-01
CN112637524A (zh) 2021-04-09
US20230378204A1 (en) 2023-11-23
US20210091129A1 (en) 2021-03-25
US11756968B2 (en) 2023-09-12
EP3799425A1 (en) 2021-03-31
EP3799425B1 (en) 2023-11-29
JP7760234B2 (ja) 2025-10-27
US12342639B2 (en) 2025-06-24

Similar Documents

Publication Publication Date Title
KR102695388B1 (ko) 디지털 픽셀을 포함하는 이미지 센서
JP7760234B2 (ja) イメージセンサー装置
US10355051B2 (en) Semiconductor device
US11552122B2 (en) Image sensor and operating method
KR102765858B1 (ko) 이미지 센서 장치
KR102414030B1 (ko) 이미지 센서
KR20200118723A (ko) 픽셀 그룹들을 포함하는 이미지 센서 및 이를 포함하는 전자 장치
CN112310130A (zh) 使用增压电容器和负偏置电压的图像传感器
JP2020162111A (ja) イメージ処理システム、イメージセンサ、イメージセンサの駆動方法
US9667895B2 (en) Stacked chip shared pixel architecture
KR102656526B1 (ko) 이미지 센서
KR102747643B1 (ko) 이미지 센서 및 이의 동작 방법
US12302024B2 (en) Image sensor device
KR102878684B1 (ko) 이미지 센서
US11451696B2 (en) Image sensor for camera device and for electronic device

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000