JP2021044429A - 磁気記憶装置 - Google Patents

磁気記憶装置 Download PDF

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Publication number
JP2021044429A
JP2021044429A JP2019166174A JP2019166174A JP2021044429A JP 2021044429 A JP2021044429 A JP 2021044429A JP 2019166174 A JP2019166174 A JP 2019166174A JP 2019166174 A JP2019166174 A JP 2019166174A JP 2021044429 A JP2021044429 A JP 2021044429A
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JP
Japan
Prior art keywords
magnetic material
magnetoresistive element
magnetic
ferromagnet
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019166174A
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English (en)
Japanese (ja)
Inventor
澤田　和也
Kazuya Sawada
和也 澤田
永ミン 李
Youngmin Eeh
永ミン 李
英二 北川
Eiji Kitagawa
英二 北川
大河 磯田
Taiga Isoda
大河 磯田
及川　忠昭
Tadaaki Oikawa
忠昭 及川
吉野　健一
Kenichi Yoshino
健一 吉野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Kioxia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kioxia Corp filed Critical Kioxia Corp
Priority to JP2019166174A priority Critical patent/JP2021044429A/ja
Priority to CN202010120714.1A priority patent/CN112490262A/zh
Priority to TW109106232A priority patent/TWI750599B/zh
Priority to US16/816,961 priority patent/US11329215B2/en
Publication of JP2021044429A publication Critical patent/JP2021044429A/ja
Priority to US17/717,518 priority patent/US11832528B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2019166174A 2019-09-12 2019-09-12 磁気記憶装置 Pending JP2021044429A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019166174A JP2021044429A (ja) 2019-09-12 2019-09-12 磁気記憶装置
CN202010120714.1A CN112490262A (zh) 2019-09-12 2020-02-26 磁性存储装置
TW109106232A TWI750599B (zh) 2019-09-12 2020-02-26 磁性記憶裝置
US16/816,961 US11329215B2 (en) 2019-09-12 2020-03-12 Magnetic memory device
US17/717,518 US11832528B2 (en) 2019-09-12 2022-04-11 Magnetic memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019166174A JP2021044429A (ja) 2019-09-12 2019-09-12 磁気記憶装置

Publications (1)

Publication Number Publication Date
JP2021044429A true JP2021044429A (ja) 2021-03-18

Family

ID=74864347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019166174A Pending JP2021044429A (ja) 2019-09-12 2019-09-12 磁気記憶装置

Country Status (4)

Country Link
US (2) US11329215B2 (zh)
JP (1) JP2021044429A (zh)
CN (1) CN112490262A (zh)
TW (1) TWI750599B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11145347B1 (en) * 2020-05-21 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and memory circuit

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JPH04130746A (ja) * 1990-09-21 1992-05-01 Hitachi Ltd ウエハ温度測定用の放射温度計およびウエハ温度測定方法
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JP2005158270A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 被加熱物載置用ヒータ部材及び加熱処理装置
JP2005203443A (ja) * 2004-01-13 2005-07-28 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
WO2007119708A1 (ja) * 2006-04-11 2007-10-25 Nec Corporation 磁気ランダムアクセスメモリ
JP2012015513A (ja) * 2010-06-29 2012-01-19 Headway Technologies Inc Ｔｍｒデバイスおよびその製造方法
US20120086067A1 (en) * 2010-10-11 2012-04-12 Monolithic 3D Inc. Semiconductor device and structure
JP2016207993A (ja) * 2015-04-16 2016-12-08 友美恵 山口 熱移送テープ。
US20180335486A1 (en) * 2017-05-19 2018-11-22 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
WO2019018051A1 (en) * 2017-07-21 2019-01-24 Applied Materials, Inc. MAGNETIC TUNNEL JUNCTIONS SUITABLE FOR HEAT TREATMENT AT HIGH TEMPERATURE
US20190140022A1 (en) * 2017-11-09 2019-05-09 Samsung Electronics Co., Ltd. Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structures
US20190206932A1 (en) * 2017-12-29 2019-07-04 Spin Memory, Inc. Method of making a three dimensional perpendicular magnetic tunnel junction with thin-film transistor

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EP0685746A3 (en) * 1994-05-30 1996-12-04 Sony Corp Magnetoresistive effect device having improved thermal resistance.
JP3749649B2 (ja) 1999-04-16 2006-03-01 日本電産サンキョー株式会社 磁気抵抗素子
JP4482667B2 (ja) 2004-09-13 2010-06-16 独立行政法人産業技術総合研究所 冷却効果を持つ配線構造
JP4643617B2 (ja) * 2007-06-26 2011-03-02 株式会社東芝 不揮発性半導体記憶装置
KR101584099B1 (ko) * 2009-08-19 2016-01-13 삼성전자주식회사 자성층을 구비한 트랙 및 이를 포함하는 자성소자
US8445979B2 (en) * 2009-09-11 2013-05-21 Samsung Electronics Co., Ltd. Magnetic memory devices including magnetic layers separated by tunnel barriers
US8077559B1 (en) * 2010-06-25 2011-12-13 Tdk Corporation Thermally-assisted magnetic recording head including plasmon generator
US8379352B1 (en) * 2011-09-08 2013-02-19 HGST Netherlands B.V. Thermagnonic spin-torque oscillator(STO) and sensor utilizing same to detect shifts in the free layer magnetization oscillation frequency
JP5734800B2 (ja) * 2011-09-21 2015-06-17 株式会社東芝 磁気記憶素子及び不揮発性記憶装置
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EP3664094B1 (en) * 2018-12-06 2022-08-24 IMEC vzw A magnetic tunnel junction unit and a memory device
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EP3839955A1 (en) * 2019-12-18 2021-06-23 Imec VZW Dual stack sot
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411383A (en) * 1987-07-06 1989-01-13 Mitsubishi Electric Corp Metal vapor laser device
JPH04130746A (ja) * 1990-09-21 1992-05-01 Hitachi Ltd ウエハ温度測定用の放射温度計およびウエハ温度測定方法
JP2000258520A (ja) * 1999-03-10 2000-09-22 Sumitomo Electric Ind Ltd 超電導体の冷却装置
JP2003303928A (ja) * 2002-04-10 2003-10-24 Elpida Memory Inc 半導体装置実装用パッケージ
JP2004152893A (ja) * 2002-10-29 2004-05-27 Sony Corp 半導体装置及び半導体メモリ
JP2005108299A (ja) * 2003-09-29 2005-04-21 Sony Corp 磁気抵抗効果型磁気ヘッドの製造方法
JP2005158270A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 被加熱物載置用ヒータ部材及び加熱処理装置
JP2005203443A (ja) * 2004-01-13 2005-07-28 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
WO2007119708A1 (ja) * 2006-04-11 2007-10-25 Nec Corporation 磁気ランダムアクセスメモリ
JP2012015513A (ja) * 2010-06-29 2012-01-19 Headway Technologies Inc Ｔｍｒデバイスおよびその製造方法
US20120086067A1 (en) * 2010-10-11 2012-04-12 Monolithic 3D Inc. Semiconductor device and structure
JP2016207993A (ja) * 2015-04-16 2016-12-08 友美恵 山口 熱移送テープ。
US20180335486A1 (en) * 2017-05-19 2018-11-22 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
WO2019018051A1 (en) * 2017-07-21 2019-01-24 Applied Materials, Inc. MAGNETIC TUNNEL JUNCTIONS SUITABLE FOR HEAT TREATMENT AT HIGH TEMPERATURE
US20190140022A1 (en) * 2017-11-09 2019-05-09 Samsung Electronics Co., Ltd. Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structures
US20190206932A1 (en) * 2017-12-29 2019-07-04 Spin Memory, Inc. Method of making a three dimensional perpendicular magnetic tunnel junction with thin-film transistor

Also Published As

Publication number Publication date
TW202111709A (zh) 2021-03-16
TWI750599B (zh) 2021-12-21
US11832528B2 (en) 2023-11-28
US20210083170A1 (en) 2021-03-18
US11329215B2 (en) 2022-05-10
US20220238792A1 (en) 2022-07-28
CN112490262A (zh) 2021-03-12

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