JP2020536174A5 - - Google Patents
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- Publication number
- JP2020536174A5 JP2020536174A5 JP2020519381A JP2020519381A JP2020536174A5 JP 2020536174 A5 JP2020536174 A5 JP 2020536174A5 JP 2020519381 A JP2020519381 A JP 2020519381A JP 2020519381 A JP2020519381 A JP 2020519381A JP 2020536174 A5 JP2020536174 A5 JP 2020536174A5
- Authority
- JP
- Japan
- Prior art keywords
- target material
- phase
- material according
- sputtering
- molybdenum oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000013077 target material Substances 0.000 description 26
- 239000012071 phase Substances 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 10
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP17001644.8 | 2017-10-06 | ||
| EP17001644.8A EP3467140A1 (de) | 2017-10-06 | 2017-10-06 | Targetmaterial zur abscheidung von molybdänoxid-schichten |
| PCT/EP2018/073811 WO2019068406A1 (de) | 2017-10-06 | 2018-09-05 | Targetmaterial zur abscheidung von molybdänoxidschichten |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020536174A JP2020536174A (ja) | 2020-12-10 |
| JP2020536174A5 true JP2020536174A5 (enExample) | 2021-07-26 |
| JP7097437B2 JP7097437B2 (ja) | 2022-07-07 |
Family
ID=60042936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020519381A Active JP7097437B2 (ja) | 2017-10-06 | 2018-09-05 | 酸化モリブデン層を堆積させるためのターゲット材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11862444B2 (enExample) |
| EP (1) | EP3467140A1 (enExample) |
| JP (1) | JP7097437B2 (enExample) |
| KR (1) | KR102753308B1 (enExample) |
| CN (1) | CN111527234B (enExample) |
| TW (1) | TWI768130B (enExample) |
| WO (1) | WO2019068406A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022014783A (ja) * | 2020-07-07 | 2022-01-20 | 三菱マテリアル株式会社 | 酸化モリブデンスパッタリングターゲット、および、酸化モリブデンスパッタリングターゲットの製造方法 |
| CN112359336B (zh) * | 2020-10-27 | 2023-05-26 | 金堆城钼业股份有限公司 | 一种高纯、高致密度三氧化钼靶材的制备方法 |
| CN112359333B (zh) * | 2020-10-27 | 2022-11-04 | 金堆城钼业股份有限公司 | 一种制备大尺寸、高纯度、高致密度三氧化钼靶材的方法 |
| WO2022124460A1 (ko) * | 2020-12-10 | 2022-06-16 | 엘티메탈 주식회사 | 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 소결체 및 이를 포함하는 스퍼터링 타겟{metal oxide sintered body containing molybdenum oxide as the main component and sputtering target comprising the same} |
| KR102315308B1 (ko) * | 2020-12-10 | 2021-10-21 | 엘티메탈 주식회사 | 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 소결체 및 이를 포함하는 스퍼터링 타겟 |
| KR102315283B1 (ko) * | 2020-12-10 | 2021-10-21 | 엘티메탈 주식회사 | 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 박막 및 이러한 박막이 형성된 박막트랜지스터와 디스플레이 장치 |
| JP7436409B2 (ja) * | 2021-02-26 | 2024-02-21 | Ｊｘ金属株式会社 | 酸化物スパッタリングターゲット及びその製造方法並びに酸化物薄膜 |
| CN115196964B (zh) * | 2021-04-14 | 2023-07-25 | 河南科技大学 | 一种含钠的氧化钼陶瓷溅射靶材制备方法 |
| KR102646917B1 (ko) * | 2021-09-16 | 2024-03-13 | 엘티메탈 주식회사 | 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치 |
| TWI839845B (zh) * | 2021-10-06 | 2024-04-21 | 南韓商Ｌｔ金屬股份有限公司 | 氧化鉬基燒結體、濺鍍靶材、使用燒結體的氧化物薄膜、包含薄膜的薄膜電晶體及顯示裝置 |
| WO2023059071A1 (ko) * | 2021-10-06 | 2023-04-13 | 엘티메탈 주식회사 | 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치 |
| WO2023063774A1 (ko) * | 2021-10-14 | 2023-04-20 | 엘티메탈 주식회사 | 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막 |
| KR20230053774A (ko) | 2021-10-14 | 2023-04-24 | 엘티메탈 주식회사 | 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막 |
| CN118119575A (zh) | 2021-10-14 | 2024-05-31 | Lt金属株式会社 | 钼氧化物基烧结体、包含其的溅射靶材以及氧化物薄膜 |
| KR20240152685A (ko) * | 2023-04-13 | 2024-10-22 | 엘티메탈 주식회사 | 몰리브덴 산화물 소결체, 스퍼터링 타겟 및 산화물 박막 |
| KR20240152686A (ko) | 2023-04-13 | 2024-10-22 | 엘티메탈 주식회사 | 몰리브덴 산화물 소결체, 스퍼터링 타겟 및 산화물 박막 |
| CN116813342A (zh) * | 2023-06-30 | 2023-09-29 | 宁波江丰电子材料股份有限公司 | 一种高致密度氧化钼钽靶材的制备方法 |
| CN117125982B (zh) * | 2023-09-04 | 2025-10-31 | 郑州大学 | 钼氧比可控的非化学计量氧化钼靶材的制备方法 |
| KR20250091830A (ko) * | 2023-12-14 | 2025-06-23 | 엘티메탈 주식회사 | 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치 |
| CN119615063B (zh) * | 2024-12-27 | 2025-12-09 | 北京科技大学 | 一种实现稳定化学计量比的金属氧化物薄膜制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1452622A3 (en) | 1995-08-23 | 2004-09-29 | Asahi Glass Ceramics Co., Ltd. | Target and process for its production, and method for forming a film having a high refractive index |
| CN1826290A (zh) * | 2003-07-22 | 2006-08-30 | H.C.施塔克公司 | 制备MoO2 粉末的方法、由MoO2粉末制备的产品、MoO2薄膜的沉积以及使用这种材料的方法 |
| UA67135A (en) * | 2003-07-25 | 2004-06-15 | Subsidiary Entpr With Foreign | Method for producing lithium battery |
| US7754185B2 (en) | 2004-06-29 | 2010-07-13 | H.C. Starck Inc. | Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials |
| JP2013020347A (ja) | 2011-07-08 | 2013-01-31 | Toppan Printing Co Ltd | タッチパネルおよびタッチパネルの製造方法 |
| EP2584062A1 (de) * | 2011-10-19 | 2013-04-24 | Heraeus Materials Technology GmbH & Co. KG | Sputtertarget und seine Verwendung |
| DE102012010803A1 (de) * | 2012-06-01 | 2013-12-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Licht absorbierende Schichtstruktur |
| DE102012112739A1 (de) * | 2012-10-23 | 2014-04-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Licht absorbierendes Schichtsystem und dessen Herstellung sowie dafür geeignetes Sputtertarget |
| DE102013103679A1 (de) * | 2013-04-11 | 2014-10-30 | Heraeus Materials Technology Gmbh & Co. Kg | Licht absorbierende Schicht und die Schicht enthaltendes Schichtsystem, Verfahren zur dessen Herstellung und dafür geeignetes Sputtertarget |
| DE102014111935A1 (de) | 2014-08-20 | 2016-02-25 | Heraeus Deutschland GmbH & Co. KG | Zweilagiges Schichtsystem mit teilabsorbierender Schicht sowie Verfahren und Sputtertarget zur Herstellung dieser Schicht |
| CN107162057B (zh) * | 2017-04-25 | 2018-08-24 | 北京交通大学 | 一种具有优异可见光吸收性能的非化学计量钼氧化物材料及其制备方法和应用 |
-
2017
- 2017-10-06 EP EP17001644.8A patent/EP3467140A1/de active Pending
-
2018
- 2018-09-05 WO PCT/EP2018/073811 patent/WO2019068406A1/de not_active Ceased
- 2018-09-05 KR KR1020207012119A patent/KR102753308B1/ko active Active
- 2018-09-05 CN CN201880064791.0A patent/CN111527234B/zh active Active
- 2018-09-05 US US16/753,898 patent/US11862444B2/en active Active
- 2018-09-05 JP JP2020519381A patent/JP7097437B2/ja active Active
- 2018-10-01 TW TW107134606A patent/TWI768130B/zh active
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