CN111527234B - 用于沉积氧化钼层的靶材料 - Google Patents

用于沉积氧化钼层的靶材料 Download PDF

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CN111527234B
CN111527234B CN201880064791.0A CN201880064791A CN111527234B CN 111527234 B CN111527234 B CN 111527234B CN 201880064791 A CN201880064791 A CN 201880064791A CN 111527234 B CN111527234 B CN 111527234B
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molybdenum oxide
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CN111527234A (zh
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恩里科·弗兰兹克
哈拉尔德·考斯滕鲍尔
乔格·温克勒
多米尼克·洛伦兹
托马斯·莱特
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Plansee SE
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    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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CN201880064791.0A 2017-10-06 2018-09-05 用于沉积氧化钼层的靶材料 Active CN111527234B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17001644.8A EP3467140A1 (de) 2017-10-06 2017-10-06 Targetmaterial zur abscheidung von molybdänoxid-schichten
EP17001644.8 2017-10-06
PCT/EP2018/073811 WO2019068406A1 (de) 2017-10-06 2018-09-05 Targetmaterial zur abscheidung von molybdänoxidschichten

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CN111527234A CN111527234A (zh) 2020-08-11
CN111527234B true CN111527234B (zh) 2022-10-14

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US (1) US11862444B2 (enExample)
EP (1) EP3467140A1 (enExample)
JP (1) JP7097437B2 (enExample)
KR (1) KR102753308B1 (enExample)
CN (1) CN111527234B (enExample)
TW (1) TWI768130B (enExample)
WO (1) WO2019068406A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022014783A (ja) * 2020-07-07 2022-01-20 三菱マテリアル株式会社 酸化モリブデンスパッタリングターゲット、および、酸化モリブデンスパッタリングターゲットの製造方法
CN112359336B (zh) * 2020-10-27 2023-05-26 金堆城钼业股份有限公司 一种高纯、高致密度三氧化钼靶材的制备方法
CN112359333B (zh) * 2020-10-27 2022-11-04 金堆城钼业股份有限公司 一种制备大尺寸、高纯度、高致密度三氧化钼靶材的方法
KR102315283B1 (ko) * 2020-12-10 2021-10-21 엘티메탈 주식회사 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 박막 및 이러한 박막이 형성된 박막트랜지스터와 디스플레이 장치
WO2022124460A1 (ko) * 2020-12-10 2022-06-16 엘티메탈 주식회사 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 소결체 및 이를 포함하는 스퍼터링 타겟{metal oxide sintered body containing molybdenum oxide as the main component and sputtering target comprising the same}
KR102315308B1 (ko) * 2020-12-10 2021-10-21 엘티메탈 주식회사 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 소결체 및 이를 포함하는 스퍼터링 타겟
JP7436409B2 (ja) * 2021-02-26 2024-02-21 Ｊｘ金属株式会社 酸化物スパッタリングターゲット及びその製造方法並びに酸化物薄膜
CN115196964B (zh) * 2021-04-14 2023-07-25 河南科技大学 一种含钠的氧化钼陶瓷溅射靶材制备方法
KR102646917B1 (ko) * 2021-09-16 2024-03-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
WO2023059071A1 (ko) * 2021-10-06 2023-04-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
TWI839845B (zh) * 2021-10-06 2024-04-21 南韓商Ｌｔ金屬股份有限公司 氧化鉬基燒結體、濺鍍靶材、使用燒結體的氧化物薄膜、包含薄膜的薄膜電晶體及顯示裝置
KR102879420B1 (ko) * 2021-10-14 2025-11-03 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막
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KR20250091830A (ko) * 2023-12-14 2025-06-23 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
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