TWI768130B - 用於沉積氧化鉬層之靶材料 - Google Patents

用於沉積氧化鉬層之靶材料 Download PDF

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TWI768130B
TWI768130B TW107134606A TW107134606A TWI768130B TW I768130 B TWI768130 B TW I768130B TW 107134606 A TW107134606 A TW 107134606A TW 107134606 A TW107134606 A TW 107134606A TW I768130 B TWI768130 B TW I768130B
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target material
phase
molybdenum oxide
substoichiometric
moo
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TW107134606A
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Chinese (zh)
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TW201915200A (zh
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安瑞克 法蘭斯格
哈瑞爾德 寇斯特恩寶兒
傑格 溫克勒
多明尼克 羅倫茲
托馬士 萊特
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奧地利商攀時歐洲公司
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    • H—ELECTRICITY
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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    • C—CHEMISTRY; METALLURGY
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    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
TW107134606A 2017-10-06 2018-10-01 用於沉積氧化鉬層之靶材料 TWI768130B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17001644.8 2017-10-06
EP17001644.8A EP3467140A1 (de) 2017-10-06 2017-10-06 Targetmaterial zur abscheidung von molybdänoxid-schichten
??17001644.8 2017-10-06

Publications (2)

Publication Number Publication Date
TW201915200A TW201915200A (zh) 2019-04-16
TWI768130B true TWI768130B (zh) 2022-06-21

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TW107134606A TWI768130B (zh) 2017-10-06 2018-10-01 用於沉積氧化鉬層之靶材料

Country Status (7)

Country Link
US (1) US11862444B2 (enExample)
EP (1) EP3467140A1 (enExample)
JP (1) JP7097437B2 (enExample)
KR (1) KR102753308B1 (enExample)
CN (1) CN111527234B (enExample)
TW (1) TWI768130B (enExample)
WO (1) WO2019068406A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022014783A (ja) * 2020-07-07 2022-01-20 三菱マテリアル株式会社 酸化モリブデンスパッタリングターゲット、および、酸化モリブデンスパッタリングターゲットの製造方法
CN112359336B (zh) * 2020-10-27 2023-05-26 金堆城钼业股份有限公司 一种高纯、高致密度三氧化钼靶材的制备方法
CN112359333B (zh) * 2020-10-27 2022-11-04 金堆城钼业股份有限公司 一种制备大尺寸、高纯度、高致密度三氧化钼靶材的方法
WO2022124460A1 (ko) * 2020-12-10 2022-06-16 엘티메탈 주식회사 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 소결체 및 이를 포함하는 스퍼터링 타겟{metal oxide sintered body containing molybdenum oxide as the main component and sputtering target comprising the same}
KR102315308B1 (ko) * 2020-12-10 2021-10-21 엘티메탈 주식회사 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 소결체 및 이를 포함하는 스퍼터링 타겟
KR102315283B1 (ko) * 2020-12-10 2021-10-21 엘티메탈 주식회사 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 박막 및 이러한 박막이 형성된 박막트랜지스터와 디스플레이 장치
JP7436409B2 (ja) * 2021-02-26 2024-02-21 Ｊｘ金属株式会社 酸化物スパッタリングターゲット及びその製造方法並びに酸化物薄膜
CN115196964B (zh) * 2021-04-14 2023-07-25 河南科技大学 一种含钠的氧化钼陶瓷溅射靶材制备方法
KR102646917B1 (ko) * 2021-09-16 2024-03-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
TWI839845B (zh) * 2021-10-06 2024-04-21 南韓商Ｌｔ金屬股份有限公司 氧化鉬基燒結體、濺鍍靶材、使用燒結體的氧化物薄膜、包含薄膜的薄膜電晶體及顯示裝置
WO2023059071A1 (ko) * 2021-10-06 2023-04-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
WO2023063774A1 (ko) * 2021-10-14 2023-04-20 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막
KR20230053774A (ko) 2021-10-14 2023-04-24 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막
CN118119575A (zh) 2021-10-14 2024-05-31 Lt金属株式会社 钼氧化物基烧结体、包含其的溅射靶材以及氧化物薄膜
KR20240152685A (ko) * 2023-04-13 2024-10-22 엘티메탈 주식회사 몰리브덴 산화물 소결체, 스퍼터링 타겟 및 산화물 박막
KR20240152686A (ko) 2023-04-13 2024-10-22 엘티메탈 주식회사 몰리브덴 산화물 소결체, 스퍼터링 타겟 및 산화물 박막
CN116813342A (zh) * 2023-06-30 2023-09-29 宁波江丰电子材料股份有限公司 一种高致密度氧化钼钽靶材的制备方法
CN117125982B (zh) * 2023-09-04 2025-10-31 郑州大学 钼氧比可控的非化学计量氧化钼靶材的制备方法
KR20250091830A (ko) * 2023-12-14 2025-06-23 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
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