JP2020529739A5 - - Google Patents
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- Publication number
- JP2020529739A5 JP2020529739A5 JP2020505880A JP2020505880A JP2020529739A5 JP 2020529739 A5 JP2020529739 A5 JP 2020529739A5 JP 2020505880 A JP2020505880 A JP 2020505880A JP 2020505880 A JP2020505880 A JP 2020505880A JP 2020529739 A5 JP2020529739 A5 JP 2020529739A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- etching
- precursor
- alp
- feature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 107
- 238000005530 etching Methods 0.000 claims description 83
- 238000002161 passivation Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 48
- 239000002243 precursor Substances 0.000 claims description 45
- 239000007789 gas Substances 0.000 claims description 34
- 239000007788 liquid Substances 0.000 claims description 22
- 238000001020 plasma etching Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000012705 liquid precursor Substances 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- 238000010926 purge Methods 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 21
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 230000005496 eutectics Effects 0.000 claims 3
- 239000002356 single layer Substances 0.000 claims 2
- 206010015535 Euphoric mood Diseases 0.000 description 2
- 230000002743 euphoric effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 208000036762 Acute promyelocytic leukaemia Diseases 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/669,871 | 2017-08-04 | ||
| US15/669,871 US10950454B2 (en) | 2017-08-04 | 2017-08-04 | Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method |
| PCT/US2018/042560 WO2019027672A1 (en) | 2017-08-04 | 2018-07-17 | INTEGRATED ATOMIC LAYER PASSIVATION IN TCP ETCHING CHAMBER AND ALP IN SITU ETCHING METHOD |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020529739A JP2020529739A (ja) | 2020-10-08 |
| JP2020529739A5 true JP2020529739A5 (https=) | 2021-09-30 |
| JP7391830B2 JP7391830B2 (ja) | 2023-12-05 |
Family
ID=65229945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020505880A Active JP7391830B2 (ja) | 2017-08-04 | 2018-07-17 | Ｔｃｐエッチングチャンバ内での統合原子層パッシベーションおよびインサイチュエッチング－ａｌｐ方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10950454B2 (https=) |
| JP (1) | JP7391830B2 (https=) |
| KR (2) | KR102842309B1 (https=) |
| CN (1) | CN110998805B (https=) |
| TW (1) | TWI759516B (https=) |
| WO (1) | WO2019027672A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7472114B2 (ja) | 2018-09-28 | 2024-04-22 | ラム リサーチ コーポレーション | 堆積副生成物の蓄積からの真空ポンプの保護 |
| TWI910974B (zh) | 2019-06-26 | 2026-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| JP7330078B2 (ja) * | 2019-11-25 | 2023-08-21 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| TWI714366B (zh) * | 2019-11-26 | 2020-12-21 | 聚昌科技股份有限公司 | 線圈垂直位置可動態調整之蝕刻機結構 |
| US20210381107A1 (en) * | 2020-06-03 | 2021-12-09 | Micron Technology, Inc. | Material deposition systems, and related methods and microelectronic devices |
| CN111584411A (zh) * | 2020-06-11 | 2020-08-25 | 中国科学院微电子研究所 | 半导体加工设备、沉积钝化层方法及pram制作方法 |
| US12609283B2 (en) * | 2020-06-15 | 2026-04-21 | Lam Research Corporation | Control of pulsing frequencies and duty cycles of parameters of RF signals |
| US12577466B2 (en) | 2020-12-08 | 2026-03-17 | Lam Research Corporation | Photoresist development with organic vapor |
| TW202407797A (zh) * | 2022-03-01 | 2024-02-16 | 日商東京威力科創股份有限公司 | 電漿處理方法及電漿處理裝置 |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| WO2024196643A1 (en) | 2023-03-17 | 2024-09-26 | Lam Research Corporation | Integration of dry development and etch processes for euv patterning in a single process chamber |
| KR20250034920A (ko) | 2023-07-27 | 2025-03-11 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
| US20250253192A1 (en) * | 2024-02-06 | 2025-08-07 | Applied Materials, Inc. | Barrier and liner treatment using dual radio frequency capacitive couple plasma for metal interconnects |
| WO2025216970A1 (en) * | 2024-04-10 | 2025-10-16 | Lam Research Corporation | Dielectric etch with reduced distortion |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6140208A (en) * | 1999-02-05 | 2000-10-31 | International Business Machines Corporation | Shallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applications |
| JP2004327606A (ja) * | 2003-04-23 | 2004-11-18 | Denso Corp | ドライエッチング方法 |
| JP2009512206A (ja) * | 2005-10-11 | 2009-03-19 | アビザ テクノロジー リミティド | 容積式ポンプ・チャンバー |
| JP5108489B2 (ja) * | 2007-01-16 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| WO2008153674A1 (en) * | 2007-06-09 | 2008-12-18 | Boris Kobrin | Method and apparatus for anisotropic etching |
| US20100062149A1 (en) * | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
| EP2362411A1 (en) * | 2010-02-26 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus and method for reactive ion etching |
| US8562785B2 (en) * | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
| US9230825B2 (en) * | 2012-10-29 | 2016-01-05 | Lam Research Corporation | Method of tungsten etching |
| US9378971B1 (en) * | 2014-12-04 | 2016-06-28 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US10937634B2 (en) * | 2013-10-04 | 2021-03-02 | Lam Research Corporation | Tunable upper plasma-exclusion-zone ring for a bevel etcher |
| CA2943028A1 (en) * | 2014-03-21 | 2015-09-24 | Brookhaven Science Associates, Llc | Hole blocking, electron transporting and window layer for optimized cuin(1-x)ga(x)se2 solar cells |
| US9704973B2 (en) | 2014-04-01 | 2017-07-11 | Globalfoundries Inc. | Methods of forming fins for FinFET semiconductor devices and the selective removal of such fins |
| US9711365B2 (en) * | 2014-05-02 | 2017-07-18 | International Business Machines Corporation | Etch rate enhancement for a silicon etch process through etch chamber pretreatment |
| US9431297B2 (en) | 2014-10-01 | 2016-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming an interconnect structure for a semiconductor device |
| GB201420366D0 (en) * | 2014-11-17 | 2014-12-31 | Univ Liverpool | Dielectric barrier layer |
| US10170324B2 (en) * | 2014-12-04 | 2019-01-01 | Lam Research Corporation | Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch |
| US9997373B2 (en) | 2014-12-04 | 2018-06-12 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US9576811B2 (en) * | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9934956B2 (en) | 2015-07-27 | 2018-04-03 | Lam Research Corporation | Time multiplexed chemical delivery system |
| US9543148B1 (en) * | 2015-09-01 | 2017-01-10 | Lam Research Corporation | Mask shrink layer for high aspect ratio dielectric etch |
| US10283348B2 (en) * | 2016-01-20 | 2019-05-07 | Versum Materials Us, Llc | High temperature atomic layer deposition of silicon-containing films |
| US10074543B2 (en) * | 2016-08-31 | 2018-09-11 | Lam Research Corporation | High dry etch rate materials for semiconductor patterning applications |
-
2017
- 2017-08-04 US US15/669,871 patent/US10950454B2/en active Active
-
2018
- 2018-07-17 KR KR1020247021435A patent/KR102842309B1/ko active Active
- 2018-07-17 KR KR1020207006349A patent/KR20200028489A/ko not_active Ceased
- 2018-07-17 JP JP2020505880A patent/JP7391830B2/ja active Active
- 2018-07-17 CN CN201880050870.6A patent/CN110998805B/zh active Active
- 2018-07-17 WO PCT/US2018/042560 patent/WO2019027672A1/en not_active Ceased
- 2018-07-31 TW TW107126412A patent/TWI759516B/zh active
-
2021
- 2021-03-12 US US17/200,526 patent/US20210287909A1/en not_active Abandoned
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