KR102842309B1 - TCP 에칭 챔버에서 통합된 ALP (Atomic Layer Passivation : 원자 층 패시베이션) 및 인-시츄 에칭-ALP 방법 - Google Patents

TCP 에칭 챔버에서 통합된 ALP (Atomic Layer Passivation : 원자 층 패시베이션) 및 인-시츄 에칭-ALP 방법

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Publication number
KR102842309B1
KR102842309B1 KR1020247021435A KR20247021435A KR102842309B1 KR 102842309 B1 KR102842309 B1 KR 102842309B1 KR 1020247021435 A KR1020247021435 A KR 1020247021435A KR 20247021435 A KR20247021435 A KR 20247021435A KR 102842309 B1 KR102842309 B1 KR 102842309B1
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South Korea
Prior art keywords
etching
plasma
precursor
chamber
passivation film
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Korean (ko)
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KR20240104224A (ko
Inventor
시앙 조우
톰 에이. 캠프
요시에 기무라
두밍 장
첸 슈
존 드류
알렉스 패터슨
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H01L21/30655—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01L21/67069—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020247021435A 2017-08-04 2018-07-17 TCP 에칭 챔버에서 통합된 ALP (Atomic Layer Passivation : 원자 층 패시베이션) 및 인-시츄 에칭-ALP 방법 Active KR102842309B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/669,871 2017-08-04
US15/669,871 US10950454B2 (en) 2017-08-04 2017-08-04 Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method
KR1020207006349A KR20200028489A (ko) 2017-08-04 2018-07-17 TCP 에칭 챔버에서 통합된 ALP (Atomic Layer Passivation : 원자 층 패시베이션) 및 인-시츄 에칭-ALP 방법
PCT/US2018/042560 WO2019027672A1 (en) 2017-08-04 2018-07-17 INTEGRATED ATOMIC LAYER PASSIVATION IN TCP ETCHING CHAMBER AND ALP IN SITU ETCHING METHOD

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020207006349A Division KR20200028489A (ko) 2017-08-04 2018-07-17 TCP 에칭 챔버에서 통합된 ALP (Atomic Layer Passivation : 원자 층 패시베이션) 및 인-시츄 에칭-ALP 방법

Publications (2)

Publication Number Publication Date
KR20240104224A KR20240104224A (ko) 2024-07-04
KR102842309B1 true KR102842309B1 (ko) 2025-08-04

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Application Number Title Priority Date Filing Date
KR1020247021435A Active KR102842309B1 (ko) 2017-08-04 2018-07-17 TCP 에칭 챔버에서 통합된 ALP (Atomic Layer Passivation : 원자 층 패시베이션) 및 인-시츄 에칭-ALP 방법
KR1020207006349A Ceased KR20200028489A (ko) 2017-08-04 2018-07-17 TCP 에칭 챔버에서 통합된 ALP (Atomic Layer Passivation : 원자 층 패시베이션) 및 인-시츄 에칭-ALP 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020207006349A Ceased KR20200028489A (ko) 2017-08-04 2018-07-17 TCP 에칭 챔버에서 통합된 ALP (Atomic Layer Passivation : 원자 층 패시베이션) 및 인-시츄 에칭-ALP 방법

Country Status (6)

Country Link
US (2) US10950454B2 (https=)
JP (1) JP7391830B2 (https=)
KR (2) KR102842309B1 (https=)
CN (1) CN110998805B (https=)
TW (1) TWI759516B (https=)
WO (1) WO2019027672A1 (https=)

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TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
JP7330078B2 (ja) * 2019-11-25 2023-08-21 東京エレクトロン株式会社 エッチング方法およびエッチング装置
TWI714366B (zh) * 2019-11-26 2020-12-21 聚昌科技股份有限公司 線圈垂直位置可動態調整之蝕刻機結構
US20210381107A1 (en) * 2020-06-03 2021-12-09 Micron Technology, Inc. Material deposition systems, and related methods and microelectronic devices
CN111584411A (zh) * 2020-06-11 2020-08-25 中国科学院微电子研究所 半导体加工设备、沉积钝化层方法及pram制作方法
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
TW202407797A (zh) * 2022-03-01 2024-02-16 日商東京威力科創股份有限公司 電漿處理方法及電漿處理裝置
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
WO2024196643A1 (en) 2023-03-17 2024-09-26 Lam Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상
US20250253192A1 (en) * 2024-02-06 2025-08-07 Applied Materials, Inc. Barrier and liner treatment using dual radio frequency capacitive couple plasma for metal interconnects
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US20170178920A1 (en) * 2014-12-04 2017-06-22 Lam Research Corporation Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch

Also Published As

Publication number Publication date
WO2019027672A1 (en) 2019-02-07
TWI759516B (zh) 2022-04-01
JP7391830B2 (ja) 2023-12-05
CN110998805A (zh) 2020-04-10
US20210287909A1 (en) 2021-09-16
US10950454B2 (en) 2021-03-16
KR20240104224A (ko) 2024-07-04
US20190043728A1 (en) 2019-02-07
CN110998805B (zh) 2024-06-14
JP2020529739A (ja) 2020-10-08
TW201920733A (zh) 2019-06-01
KR20200028489A (ko) 2020-03-16

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