JP2020526030A5 - - Google Patents

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Publication number
JP2020526030A5
JP2020526030A5 JP2019572152A JP2019572152A JP2020526030A5 JP 2020526030 A5 JP2020526030 A5 JP 2020526030A5 JP 2019572152 A JP2019572152 A JP 2019572152A JP 2019572152 A JP2019572152 A JP 2019572152A JP 2020526030 A5 JP2020526030 A5 JP 2020526030A5
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JP
Japan
Prior art keywords
light emitting
source
substrate
target substrate
target
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Pending
Application number
JP2019572152A
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English (en)
Japanese (ja)
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JP2020526030A (ja
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Priority claimed from PCT/US2018/039533 external-priority patent/WO2019005818A1/en
Publication of JP2020526030A publication Critical patent/JP2020526030A/ja
Publication of JP2020526030A5 publication Critical patent/JP2020526030A5/ja
Pending legal-status Critical Current

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JP2019572152A 2017-06-26 2018-06-26 発光ダイオード（ｌｅｄ）のマストランスファー装置および製造方法 Pending JP2020526030A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762525105P 2017-06-26 2017-06-26
US62/525,105 2017-06-26
PCT/US2018/039533 WO2019005818A1 (en) 2017-06-26 2018-06-26 LIGHT EMITTING DIODE (LED) MASS TRANSFER APPARATUS AND METHOD FOR MANUFACTURING THE SAME

Publications (2)

Publication Number Publication Date
JP2020526030A JP2020526030A (ja) 2020-08-27
JP2020526030A5 true JP2020526030A5 (enExample) 2021-07-26

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ID=64693505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019572152A Pending JP2020526030A (ja) 2017-06-26 2018-06-26 発光ダイオード（ｌｅｄ）のマストランスファー装置および製造方法

Country Status (7)

Country Link
US (1) US10978429B2 (enExample)
EP (1) EP3646384A4 (enExample)
JP (1) JP2020526030A (enExample)
KR (1) KR20200013068A (enExample)
CN (1) CN111052386A (enExample)
TW (1) TW201917811A (enExample)
WO (1) WO2019005818A1 (enExample)

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TWI752595B (zh) * 2020-08-18 2022-01-11 東捷科技股份有限公司 自發光畫素裝置
CN112768572B (zh) * 2021-01-07 2022-10-11 武汉理工大学 基于高速扫描激光转印的微型led巨量转移方法及装置
CN116190257A (zh) * 2021-11-26 2023-05-30 群创光电股份有限公司 电子装置的制造方法
TWI807544B (zh) * 2021-12-17 2023-07-01 友達光電股份有限公司 顯示面板及其製造方法
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