JP2020521324A - アレイ基板及びその作製方法、タブレットディテクタ及び映像装置 - Google Patents
アレイ基板及びその作製方法、タブレットディテクタ及び映像装置 Download PDFInfo
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- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 10
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Abstract
Description
本開示は、出願番号が201710362644.9であり、名称が「アレイ基板及びその作製方法、タブレットディテクタ及び映像装置」である出願を基礎とする優先権を主張する。
02 検出ユニット
10 アレイ基板
11 非可視光(例えばX線)変換層
12 パッシベーション層
13 ゲート絶縁層
14 電極
15 樹脂層
16 バッファ層
21 フォトレジスト
22 透明電極層
101 光電変換器
120 ソース
121 ドレイン
122 ゲート
123 活性層
200 ポリシリコンフィルム
201 第1ビアホール
202 第2ビアホール
1201 第1導電層
1202 第2導電層
1231 高ドープ領域
1232 軽ドープ領域
1233 チャネル領域
1202 第2導電層
本開示は、国際出願番号がPCT/CN2017/116523であり、国際出願日が2017年12月15日である国際出願の国家段階に入る出願であり、2017年5月19日に出願された出願番号が201710362644.9であり、名称が「アレイ基板及びその作製方法、タブレットディテクタ及び映像装置」である出願を基礎とする優先権を主張する。
02 検出ユニット
10 アレイ基板
11 非可視光(例えばX線)変換層
12 パッシベーション層
13 ゲート絶縁層
14 電極
15 樹脂層
16 バッファ層
17 パッシベーション層
21 フォトレジスト
22 透明電極層
101 光電変換器
120 ソース
121 ドレイン
122 ゲート
123 活性層
200 ポリシリコンフィルムパターン
201 第1ビアホール
202 第2ビアホール
1201 第1導電層
1202 第2導電層
1231 高ドープ領域
1232 軽ドープ領域
1233 チャネル領域
1202 第2導電層
Claims (17)
- 下地基板と、前記下地基板上に設けられたフィルムトランジスタと、フィルムトランジスタの第1電極に接続された光電変換器と、を含むアレイ基板であって、
前記第1電極は第1導電層を含み、
前記光電変換器は、前記第1導電層の前記下地基板から離れる側に設けられ、
前記第1導電層は、前記光電変換器の形成工程においてエッチング耐性を有する材料を含み、
前記第1電極は、前記フィルムトランジスタのソースまたはドレインである、
ことを特徴とするアレイ基板。 - 第1導電層の材料は、インジウムスズ酸化物、インジウム亜鉛酸化物、インジウムガリウム亜鉛酸化物、インジウムスズ亜鉛酸化物、インジウムガリウムスズ酸化物、酸化亜鉛、カドミウム酸化物、酸化アルミニウムのうち少なくとも1種を含む、
ことを特徴とする請求項1に記載のアレイ基板。 - 前記光電変換器は、該光電変換器の第1の側とは反対の第2の側に位置する第2導電層をさらに含み、
前記第2導電層は、金属材料を含む、
ことを特徴とする請求項1に記載のアレイ基板。 - 前記フィルムトランジスタの活性層の両端は、それぞれ前記フィルムトランジスタのソース及びドレインに接続され、
前記フィルムトランジスタの活性層の下地基板への正投影は、前記活性層の両端間の長さを延長するように蛇行した形状を有する、
ことを特徴とする請求項1から3のいずれか一項に記載のアレイ基板。 - 前記フィルムトランジスタの活性層の下地基板への正射影は、U型形状を有し、
前記フィルムトランジスタのソース及びドレインは前記活性層の両端にそれぞれ接続されている、
ことを特徴とする請求項4に記載のアレイ基板。 - 前記フィルムトランジスタは、トップゲート型のフィルムトランジスタであり、
前記アレイ基板は、前記光電変換器の前記下地基板から離れる側の表面に設けられた透明電極層に接続された第2電極をさらに含み、
前記第2電極の前記下地基板への正投影と前記フィルムトランジスタの活性層の前記下地基板への正投影とは、互いに離間している
ことを特徴とする請求項1に記載のアレイ基板。 - 前記アレイ基板は、前記フィルムトランジスタの活性層と前記下地基板との間に設けられたバッファ層をさらに含む、
ことを特徴とする請求項6に記載のアレイ基板。 - 前記光電変換器は、フォトダイオードである、
ことを特徴とする請求項1に記載のアレイ基板。 - 前記フィルムトランジスタは、低温ポリシリコンフィルムトランジスタである、
ことを特徴とする請求項1に記載のアレイ基板。 - 請求項1〜9のいずれか一項に記載のアレイ基板と、
前記アレイ基板を覆う非可視光変換層と、を含み、
前記非可視光変換層は、非可視光を可視光に変換するために構成されており、
前記光電変換器は、前記可視光を電気信号に変換する、
ことを特徴とするタブレットディテクタ。 - 請求項10に記載のタブレットディテクタを含む、
ことを特徴とする映像装置。 - 下地基板を提供する工程と、
前記下地基板上に設けられたフィルムトランジスタを形成する工程と、を含み、
フィルムトランジスタを形成する工程とは、第1導電材料層を形成し、1回パターニングプロセスにより前記第1導電材層からフィルムトランジスタ第1電極を形成する工程と、を含み、
前記フィルムトランジスタの第1電極に接続された光電変換器を形成する工程を備えており、
前記第1電極は第1導電層を含み、前記光電変換器が前記第1導電層の前記下地基板から離れる側に設けられ、前記第1導電層は、前記光電変換器を形成する工程においてエッチング耐性を有する材料を含む、
ことを特徴とするアレイ基板を作製する方法。 - 前記第1導電層の材料は、インジウムスズ酸化物、インジウム亜鉛酸化物、インジウムガリウム亜鉛酸化物、インジウムスズ亜鉛酸化物、インジウムガリウムスズ酸化物、酸化亜鉛、カドミウム酸化物、酸化アルミニウムのうちの少なくとも1種を含む、
ことを特徴とする請求項12に記載の方法。 - 第1導電材料層を形成する前に、第1金属材料層を形成する工程をさらに含み、
前記第1導電材料層は、前記第1金属材料層を覆い、
フィルムトランジスタのソース及びドレインは、前記第1金属材料及び前記第1導電材料層によって1回のパターニングプロセスで形成される、
ことを特徴とする請求項12に記載の方法。 - ソースおよびドレインが形成される前に、
前記下地基板上にポリシリコン材料層を形成し、1回のパターニングプロセスにより、U型の活性層を形成する工程と、
ゲート絶縁層及び第2金属材料層を形成し、前記第2金属材料層に1回のパターニングプロセスを行うことにより、ゲートを形成する工程と、をさらに含み、
ゲートの下地基板への正投影とU型の活性層の下地基板への正投影とは、重なる領域を有する、
ことを特徴とする請求項12に記載の方法。 - 前記光電変換器が形成された後、さらに、
第3金属材料層を形成し、前記光電変換器の前記下地基板から離れる側の表面に設けられた透明電極層に接続された第2電極をパターニングプロセスにより形成する工程を含み、
前記第2電極の前記下地基板への正射影と、前記フィルムトランジスタの活性層の前記下地基板への正射影とは、互いに離間している、
ことを特徴とする請求項12に記載の方法。 - 前記活性層が形成される前に、
前記下地基板上に前記下地基板を覆うバッファ層が形成される工程をさらに含む、
ことを特徴とする請求項15に記載の方法。
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