JP2020520116A5 - - Google Patents
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- Publication number
- JP2020520116A5 JP2020520116A5 JP2019562370A JP2019562370A JP2020520116A5 JP 2020520116 A5 JP2020520116 A5 JP 2020520116A5 JP 2019562370 A JP2019562370 A JP 2019562370A JP 2019562370 A JP2019562370 A JP 2019562370A JP 2020520116 A5 JP2020520116 A5 JP 2020520116A5
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- layer
- time interval
- forming
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 12
- 239000007789 gas Substances 0.000 claims 12
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 7
- 229910000077 silane Inorganic materials 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 229910052721 tungsten Inorganic materials 0.000 claims 7
- 239000010937 tungsten Substances 0.000 claims 7
- 229910052786 argon Inorganic materials 0.000 claims 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 6
- 239000001307 helium Substances 0.000 claims 4
- 229910052734 helium Inorganic materials 0.000 claims 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 4
- 235000011194 food seasoning agent Nutrition 0.000 claims 3
- 150000003961 organosilicon compounds Chemical class 0.000 claims 3
- JEEHQNXCPARQJS-UHFFFAOYSA-N boranylidynetungsten Chemical compound [W]#B JEEHQNXCPARQJS-UHFFFAOYSA-N 0.000 claims 2
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 150000003377 silicon compounds Chemical class 0.000 claims 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims 2
- 229910052580 B4C Inorganic materials 0.000 claims 1
- 229910052582 BN Inorganic materials 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- GNKTZDSRQHMHLZ-UHFFFAOYSA-N [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] Chemical compound [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] GNKTZDSRQHMHLZ-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- -1 tungsten nitride Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023014399A JP7664300B2 (ja) | 2017-05-12 | 2023-02-02 | 基板及びチャンバ部品上への金属ケイ素化合物層の堆積 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762505672P | 2017-05-12 | 2017-05-12 | |
| US62/505,672 | 2017-05-12 | ||
| PCT/US2018/032267 WO2018209200A2 (en) | 2017-05-12 | 2018-05-11 | Deposition of metal silicide layers on substrates and chamber components |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023014399A Division JP7664300B2 (ja) | 2017-05-12 | 2023-02-02 | 基板及びチャンバ部品上への金属ケイ素化合物層の堆積 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020520116A JP2020520116A (ja) | 2020-07-02 |
| JP2020520116A5 true JP2020520116A5 (enExample) | 2021-07-26 |
| JP7221879B2 JP7221879B2 (ja) | 2023-02-14 |
Family
ID=64096189
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019562370A Active JP7221879B2 (ja) | 2017-05-12 | 2018-05-11 | 基板及びチャンバ部品上への金属ケイ素化合物層の堆積 |
| JP2023014399A Active JP7664300B2 (ja) | 2017-05-12 | 2023-02-02 | 基板及びチャンバ部品上への金属ケイ素化合物層の堆積 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023014399A Active JP7664300B2 (ja) | 2017-05-12 | 2023-02-02 | 基板及びチャンバ部品上への金属ケイ素化合物層の堆積 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10734232B2 (enExample) |
| JP (2) | JP7221879B2 (enExample) |
| KR (2) | KR102735182B1 (enExample) |
| CN (2) | CN110622282B (enExample) |
| WO (1) | WO2018209200A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11152221B2 (en) * | 2019-02-20 | 2021-10-19 | Applied Materials, Inc. | Methods and apparatus for metal silicide deposition |
| JP2022533834A (ja) * | 2019-05-22 | 2022-07-26 | ラム リサーチ コーポレーション | 核生成のないタングステン堆積 |
| US11773484B2 (en) * | 2020-06-26 | 2023-10-03 | Tokyo Electron Limited | Hard mask deposition using direct current superimposed radio frequency plasma |
| JP7374058B2 (ja) | 2020-09-18 | 2023-11-06 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US11521856B2 (en) * | 2020-09-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor patterning and resulting structures |
| US11862475B2 (en) | 2020-10-15 | 2024-01-02 | Applied Materials, Inc. | Gas mixer to enable RPS purging |
| JP7641170B2 (ja) * | 2021-05-07 | 2025-03-06 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US12104243B2 (en) * | 2021-06-16 | 2024-10-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| DE102021116587B3 (de) * | 2021-06-28 | 2022-07-07 | Jenoptik Optical Systems Gmbh | Verfahren zum Herstellen einer Ätzmaske, Verfahren zum Ätzen einer Struktur in ein Substrat, Verwendung einer Tetrelschicht |
| JP7829298B2 (ja) * | 2021-10-15 | 2026-03-13 | 東京エレクトロン株式会社 | パーティクル抑制方法 |
| JP2024126187A (ja) * | 2023-03-07 | 2024-09-20 | 東京エレクトロン株式会社 | 基板処理方法 |
| WO2024233527A1 (en) * | 2023-05-10 | 2024-11-14 | Applied Materials, Inc. | Recursive flow gas mixer |
| WO2025226635A1 (en) * | 2024-04-25 | 2025-10-30 | Applied Materials, Inc. | Methods for depositing a tungsten-containing layer |
| KR20260054548A (ko) * | 2024-10-15 | 2026-04-22 | 주식회사 원익아이피에스 | 기판 처리 방법 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366585A (en) | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
| JPH07172809A (ja) * | 1993-10-14 | 1995-07-11 | Applied Materials Inc | 基板上への珪化タングステンコーティングの堆積操作の事前に堆積チャンバのアルミニウムを有する表面を処理する予備処理プロセス |
| US6037265A (en) | 1998-02-12 | 2000-03-14 | Applied Materials, Inc. | Etchant gas and a method for etching transistor gates |
| US7541283B2 (en) * | 2002-08-30 | 2009-06-02 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| TWI335615B (en) * | 2002-12-27 | 2011-01-01 | Hynix Semiconductor Inc | Method for fabricating semiconductor device using arf photolithography capable of protecting tapered profile of hard mask |
| KR20050013817A (ko) * | 2003-07-29 | 2005-02-05 | 삼성전자주식회사 | 선택적 실리사이드 형성방법을 이용한 반도체 소자의제조방법 |
| TWI319204B (en) * | 2004-10-12 | 2010-01-01 | Hynix Semiconductor Inc | Method for fabricating semiconductor device using tungsten as sacrificial hard mask |
| KR100605500B1 (ko) * | 2005-03-03 | 2006-07-28 | 삼성전자주식회사 | 라인형 활성영역을 갖는 반도체소자들 및 그 제조방법들 |
| JP2006339523A (ja) | 2005-06-03 | 2006-12-14 | Taiyo Nippon Sanso Corp | 半導体処理装置のクリーニング方法および高誘電率酸化膜のエッチング方法 |
| JP2007123783A (ja) | 2005-10-31 | 2007-05-17 | Toshiba Corp | 半導体装置の製造方法 |
| JP4684866B2 (ja) | 2005-11-17 | 2011-05-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7918938B2 (en) | 2006-01-19 | 2011-04-05 | Asm America, Inc. | High temperature ALD inlet manifold |
| TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| JP2009024252A (ja) * | 2007-05-15 | 2009-02-05 | Applied Materials Inc | タングステン材料の原子層堆積法 |
| US8481417B2 (en) | 2007-08-03 | 2013-07-09 | Micron Technology, Inc. | Semiconductor structures including tight pitch contacts and methods to form same |
| KR100965011B1 (ko) | 2007-09-03 | 2010-06-21 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성방법 |
| US7659184B2 (en) * | 2008-02-25 | 2010-02-09 | Applied Materials, Inc. | Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking |
| US8647989B2 (en) | 2011-04-15 | 2014-02-11 | United Microelectronics Corp. | Method of forming opening on semiconductor substrate |
| US9318598B2 (en) * | 2014-05-30 | 2016-04-19 | Texas Instruments Incorporated | Trench MOSFET having reduced gate charge |
| KR102171265B1 (ko) * | 2014-07-08 | 2020-10-28 | 삼성전자 주식회사 | 금속 마스크를 이용한 패터닝 방법 및 그 패터닝 방법을 포함한 반도체 소자 제조방법 |
| US10407771B2 (en) | 2014-10-06 | 2019-09-10 | Applied Materials, Inc. | Atomic layer deposition chamber with thermal lid |
| US9951421B2 (en) * | 2014-12-10 | 2018-04-24 | Lam Research Corporation | Inlet for effective mixing and purging |
| US9875890B2 (en) | 2015-03-24 | 2018-01-23 | Lam Research Corporation | Deposition of metal dielectric film for hardmasks |
| TWI720106B (zh) * | 2016-01-16 | 2021-03-01 | 美商應用材料股份有限公司 | Pecvd含鎢硬遮罩膜及製造方法 |
| US10312137B2 (en) * | 2016-06-07 | 2019-06-04 | Applied Materials, Inc. | Hardmask layer for 3D NAND staircase structure in semiconductor applications |
-
2018
- 2018-05-11 KR KR1020237028384A patent/KR102735182B1/ko active Active
- 2018-05-11 CN CN201880031496.5A patent/CN110622282B/zh active Active
- 2018-05-11 CN CN202310953875.2A patent/CN116978782A/zh active Pending
- 2018-05-11 JP JP2019562370A patent/JP7221879B2/ja active Active
- 2018-05-11 KR KR1020197036223A patent/KR102601706B1/ko active Active
- 2018-05-11 WO PCT/US2018/032267 patent/WO2018209200A2/en not_active Ceased
- 2018-05-11 US US15/977,388 patent/US10734232B2/en active Active
-
2020
- 2020-07-29 US US16/942,171 patent/US10950445B2/en active Active
-
2023
- 2023-02-02 JP JP2023014399A patent/JP7664300B2/ja active Active
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