JP2016072265A5 - - Google Patents

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Publication number
JP2016072265A5
JP2016072265A5 JP2014196498A JP2014196498A JP2016072265A5 JP 2016072265 A5 JP2016072265 A5 JP 2016072265A5 JP 2014196498 A JP2014196498 A JP 2014196498A JP 2014196498 A JP2014196498 A JP 2014196498A JP 2016072265 A5 JP2016072265 A5 JP 2016072265A5
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JP
Japan
Prior art keywords
insulating layer
electrode
source electrode
forming
manufacturer
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JP2014196498A
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English (en)
Japanese (ja)
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JP2016072265A (ja
JP6194869B2 (ja
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Priority to JP2014196498A priority Critical patent/JP6194869B2/ja
Priority claimed from JP2014196498A external-priority patent/JP6194869B2/ja
Priority to US14/853,867 priority patent/US9831311B2/en
Priority to CN201510612562.6A priority patent/CN105470304B/zh
Publication of JP2016072265A publication Critical patent/JP2016072265A/ja
Publication of JP2016072265A5 publication Critical patent/JP2016072265A5/ja
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JP2014196498A 2014-09-26 2014-09-26 半導体装置およびその製造方法 Active JP6194869B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014196498A JP6194869B2 (ja) 2014-09-26 2014-09-26 半導体装置およびその製造方法
US14/853,867 US9831311B2 (en) 2014-09-26 2015-09-14 Semiconductor device and method of manufacturing the same
CN201510612562.6A CN105470304B (zh) 2014-09-26 2015-09-23 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014196498A JP6194869B2 (ja) 2014-09-26 2014-09-26 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2016072265A JP2016072265A (ja) 2016-05-09
JP2016072265A5 true JP2016072265A5 (enExample) 2017-01-12
JP6194869B2 JP6194869B2 (ja) 2017-09-13

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ID=55585341

Family Applications (1)

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JP2014196498A Active JP6194869B2 (ja) 2014-09-26 2014-09-26 半導体装置およびその製造方法

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US (1) US9831311B2 (enExample)
JP (1) JP6194869B2 (enExample)
CN (1) CN105470304B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6791083B2 (ja) * 2017-09-28 2020-11-25 豊田合成株式会社 半導体装置の製造方法
JP6927116B2 (ja) * 2018-03-28 2021-08-25 豊田合成株式会社 半導体装置
CN114008767B (zh) * 2019-08-21 2025-03-28 株式会社村田制作所 半导体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2103419A (en) * 1981-08-04 1983-02-16 Siliconix Inc Field effect transistor with metal source
JPS6237965A (ja) * 1985-08-13 1987-02-18 Tdk Corp 縦形半導体装置およびその製造方法
JPH023980A (ja) * 1988-06-22 1990-01-09 Nissan Motor Co Ltd 縦型電界効果トランジスタ
JPH06120356A (ja) * 1992-10-01 1994-04-28 Fujitsu Ltd 半導体装置及びその製造方法
JP3154364B2 (ja) 1994-01-28 2001-04-09 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
DE69425186T3 (de) 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
JP2637937B2 (ja) * 1995-01-30 1997-08-06 関西日本電気株式会社 電界効果トランジスタの製造方法
JP5420157B2 (ja) * 2007-06-08 2014-02-19 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US9099433B2 (en) * 2012-04-23 2015-08-04 Freescale Semiconductor, Inc. High speed gallium nitride transistor devices
JP6007769B2 (ja) * 2012-12-14 2016-10-12 豊田合成株式会社 半導体装置
US9685345B2 (en) * 2013-11-19 2017-06-20 Nxp Usa, Inc. Semiconductor devices with integrated Schottky diodes and methods of fabrication

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