JP2018520518A5 - - Google Patents
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- Publication number
- JP2018520518A5 JP2018520518A5 JP2017567077A JP2017567077A JP2018520518A5 JP 2018520518 A5 JP2018520518 A5 JP 2018520518A5 JP 2017567077 A JP2017567077 A JP 2017567077A JP 2017567077 A JP2017567077 A JP 2017567077A JP 2018520518 A5 JP2018520518 A5 JP 2018520518A5
- Authority
- JP
- Japan
- Prior art keywords
- pore sealing
- exposing
- substrate
- sealing layer
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/750,778 | 2015-06-25 | ||
| US14/750,778 US9793108B2 (en) | 2015-06-25 | 2015-06-25 | Interconnect integration for sidewall pore seal and via cleanliness |
| PCT/US2016/034434 WO2016209539A1 (en) | 2015-06-25 | 2016-05-26 | Interconnect integration for sidewall pore seal and via cleanliness |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018520518A JP2018520518A (ja) | 2018-07-26 |
| JP2018520518A5 true JP2018520518A5 (enExample) | 2019-07-04 |
| JP6821607B2 JP6821607B2 (ja) | 2021-01-27 |
Family
ID=57585549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017567077A Expired - Fee Related JP6821607B2 (ja) | 2015-06-25 | 2016-05-26 | 側壁ポアの封止とビアの清浄性のための配線集積化 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9793108B2 (enExample) |
| JP (1) | JP6821607B2 (enExample) |
| KR (1) | KR102565172B1 (enExample) |
| CN (1) | CN107743651B (enExample) |
| TW (1) | TWI700389B (enExample) |
| WO (1) | WO2016209539A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3000602B1 (fr) * | 2012-12-28 | 2016-06-24 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Procede de gravure d'un materiau dielectrique poreux |
| US12057310B2 (en) | 2018-05-22 | 2024-08-06 | Versum Materials Us, Llc | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films |
| US11177127B2 (en) | 2017-05-24 | 2021-11-16 | Versum Materials Us, Llc | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films |
| US11837618B1 (en) | 2020-08-21 | 2023-12-05 | Samsung Electronics Co., Ltd. | Image sensor including a protective layer |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07107190B2 (ja) * | 1984-03-30 | 1995-11-15 | キヤノン株式会社 | 光化学気相成長方法 |
| US6440289B1 (en) * | 1999-04-02 | 2002-08-27 | Advanced Micro Devices, Inc. | Method for improving seed layer electroplating for semiconductor |
| US6759325B2 (en) * | 2000-05-15 | 2004-07-06 | Asm Microchemistry Oy | Sealing porous structures |
| US6482733B2 (en) | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
| US7276441B1 (en) | 2003-04-15 | 2007-10-02 | Lsi Logic Corporation | Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures |
| JP2005167081A (ja) * | 2003-12-04 | 2005-06-23 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US7309658B2 (en) | 2004-11-22 | 2007-12-18 | Intermolecular, Inc. | Molecular self-assembly in substrate processing |
| US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
| US20070278682A1 (en) | 2006-05-31 | 2007-12-06 | Chung-Chi Ko | Self-assembled mono-layer liner for cu/porous low-k interconnections |
| US20080032064A1 (en) * | 2006-07-10 | 2008-02-07 | President And Fellows Of Harvard College | Selective sealing of porous dielectric materials |
| JP5548332B2 (ja) * | 2006-08-24 | 2014-07-16 | 富士通セミコンダクター株式会社 | 半導体デバイスの製造方法 |
| US10037905B2 (en) * | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
| JP2008263097A (ja) * | 2007-04-13 | 2008-10-30 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
| US7781332B2 (en) * | 2007-09-19 | 2010-08-24 | International Business Machines Corporation | Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer |
| KR101357181B1 (ko) * | 2008-10-14 | 2014-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마-강화 화학적 기상 증착(ｐｅｃｖｄ)에 의해 등각성 비정질 탄소막을 증착하기 위한 방법 |
| US8492170B2 (en) * | 2011-04-25 | 2013-07-23 | Applied Materials, Inc. | UV assisted silylation for recovery and pore sealing of damaged low K films |
| US8216861B1 (en) * | 2011-06-28 | 2012-07-10 | Applied Materials, Inc. | Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition |
| US8657961B2 (en) * | 2012-04-25 | 2014-02-25 | Applied Materials, Inc. | Method for UV based silylation chamber clean |
| US20140162194A1 (en) * | 2012-05-25 | 2014-06-12 | Applied Materials, Inc. | Conformal sacrificial film by low temperature chemical vapor deposition technique |
| US9058980B1 (en) * | 2013-12-05 | 2015-06-16 | Applied Materials, Inc. | UV-assisted photochemical vapor deposition for damaged low K films pore sealing |
| US10049921B2 (en) * | 2014-08-20 | 2018-08-14 | Lam Research Corporation | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor |
-
2015
- 2015-06-25 US US14/750,778 patent/US9793108B2/en active Active
-
2016
- 2016-05-26 JP JP2017567077A patent/JP6821607B2/ja not_active Expired - Fee Related
- 2016-05-26 WO PCT/US2016/034434 patent/WO2016209539A1/en not_active Ceased
- 2016-05-26 CN CN201680034165.8A patent/CN107743651B/zh active Active
- 2016-05-26 KR KR1020187002487A patent/KR102565172B1/ko active Active
- 2016-06-23 TW TW105119681A patent/TWI700389B/zh active
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