JP6821607B2 - 側壁ポアの封止とビアの清浄性のための配線集積化 - Google Patents

側壁ポアの封止とビアの清浄性のための配線集積化 Download PDF

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JP6821607B2
JP6821607B2 JP2017567077A JP2017567077A JP6821607B2 JP 6821607 B2 JP6821607 B2 JP 6821607B2 JP 2017567077 A JP2017567077 A JP 2017567077A JP 2017567077 A JP2017567077 A JP 2017567077A JP 6821607 B2 JP6821607 B2 JP 6821607B2
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pore
dielectric constant
substrate
layer
low dielectric
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JP2018520518A (ja
JP2018520518A5 (enExample
Inventor
ホー レン，
ホー レン，
メフル ビー． ナイク，
メフル ビー． ナイク，
ディーネッシュ パディ，
ディーネッシュ パディ，
プリヤンカー ダッシュ，
プリヤンカー ダッシュ，
バスカー クマール，
バスカー クマール，
アレクサンドロス ティー． デモス，
アレクサンドロス ティー． デモス，
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
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    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Health & Medical Sciences (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2017567077A 2015-06-25 2016-05-26 側壁ポアの封止とビアの清浄性のための配線集積化 Expired - Fee Related JP6821607B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/750,778 2015-06-25
US14/750,778 US9793108B2 (en) 2015-06-25 2015-06-25 Interconnect integration for sidewall pore seal and via cleanliness
PCT/US2016/034434 WO2016209539A1 (en) 2015-06-25 2016-05-26 Interconnect integration for sidewall pore seal and via cleanliness

Publications (3)

Publication Number Publication Date
JP2018520518A JP2018520518A (ja) 2018-07-26
JP2018520518A5 JP2018520518A5 (enExample) 2019-07-04
JP6821607B2 true JP6821607B2 (ja) 2021-01-27

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US (1) US9793108B2 (enExample)
JP (1) JP6821607B2 (enExample)
KR (1) KR102565172B1 (enExample)
CN (1) CN107743651B (enExample)
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US9793108B2 (en) 2017-10-17
TWI700389B (zh) 2020-08-01
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CN107743651A (zh) 2018-02-27
JP2018520518A (ja) 2018-07-26
WO2016209539A1 (en) 2016-12-29
US20160379819A1 (en) 2016-12-29
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