JP2020505736A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020505736A5 JP2020505736A5 JP2019539927A JP2019539927A JP2020505736A5 JP 2020505736 A5 JP2020505736 A5 JP 2020505736A5 JP 2019539927 A JP2019539927 A JP 2019539927A JP 2019539927 A JP2019539927 A JP 2019539927A JP 2020505736 A5 JP2020505736 A5 JP 2020505736A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- layer
- barrier layer
- substrate
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims description 128
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 33
- 239000011888 foil Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000011787 zinc oxide Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 230000005693 optoelectronics Effects 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 13
- 229910003437 indium oxide Inorganic materials 0.000 claims description 12
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 10
- 229910001887 tin oxide Inorganic materials 0.000 claims description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 10
- -1 polyethylene terephthalate Polymers 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 4
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 238000011282 treatment Methods 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001017 electron-beam sputter deposition Methods 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 238000003851 corona treatment Methods 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000002114 nanocomposite Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical group 0.000 claims 2
- 150000003377 silicon compounds Chemical class 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 238000002834 transmittance Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- UVLYPUPIDJLUCM-UHFFFAOYSA-N indium;hydrate Chemical compound O.[In] UVLYPUPIDJLUCM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL420300A PL233211B1 (pl) | 2017-01-25 | 2017-01-25 | Folia optoelektroniczna oraz sposób wytwarzania folii optoelektronicznej |
| PLP.420300 | 2017-01-25 | ||
| PCT/PL2018/000008 WO2018139945A1 (en) | 2017-01-25 | 2018-01-24 | Optoelectronic foil and manufacturing method of optoelectronic foil |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020505736A JP2020505736A (ja) | 2020-02-20 |
| JP2020505736A5 true JP2020505736A5 (enExample) | 2021-03-04 |
| JP7206559B2 JP7206559B2 (ja) | 2023-01-18 |
Family
ID=61683865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019539927A Active JP7206559B2 (ja) | 2017-01-25 | 2018-01-24 | オプトエレクトロニクス箔およびオプトエレクトロニクス箔の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20190348621A1 (enExample) |
| EP (1) | EP3574528B1 (enExample) |
| JP (1) | JP7206559B2 (enExample) |
| CN (1) | CN110291647B (enExample) |
| ES (1) | ES2975275T3 (enExample) |
| FI (1) | FI3574528T3 (enExample) |
| PL (1) | PL233211B1 (enExample) |
| WO (1) | WO2018139945A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL425218A1 (pl) * | 2018-04-13 | 2019-10-21 | Centrum Badań I Rozwoju Technologii Dla Przemysłu Spółka Akcyjna | Krzemowe ogniwo fotowoltaiczne i sposób wytwarzania krzemowych ogniw fotowoltaicznych |
| CN109979977A (zh) | 2019-03-28 | 2019-07-05 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板及其制备方法 |
| WO2021157373A1 (ja) * | 2020-02-04 | 2021-08-12 | 三井金属鉱業株式会社 | キャリア付金属箔 |
| CN111638610A (zh) * | 2020-07-20 | 2020-09-08 | 宁波材料所杭州湾研究院 | 一种兼具可见光高透过和隔热的柔性智能调光膜及其制备方法 |
| EP4209341A4 (en) * | 2020-09-04 | 2024-10-23 | Dexerials Corporation | CONDUCTIVE LAMINATED PRODUCT, OPTICAL DEVICE USING SAME, AND MANUFACTURING METHOD FOR CONDUCTIVE LAMINATED PRODUCT |
| JP7230131B2 (ja) * | 2020-09-04 | 2023-02-28 | デクセリアルズ株式会社 | 導電性積層体及びこれを用いた光学装置、導電性積層体の製造方法 |
| ES2980711T3 (es) | 2021-03-23 | 2024-10-02 | Saule S A | Una estructura multicapa transmisora de luz para dispositivos optoelectrónicos |
| US11545453B2 (en) * | 2021-04-19 | 2023-01-03 | Nanya Technology Corporation | Semiconductor device with barrier layer and method for fabricating the same |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5667853A (en) * | 1995-03-22 | 1997-09-16 | Toppan Printing Co., Ltd. | Multilayered conductive film, and transparent electrode substrate and liquid crystal device using the same |
| JPH1024520A (ja) * | 1996-07-11 | 1998-01-27 | Mitsui Petrochem Ind Ltd | 透明導電性積層体 |
| US6379509B2 (en) * | 1998-01-20 | 2002-04-30 | 3M Innovative Properties Company | Process for forming electrodes |
| EP1921491A1 (en) * | 1998-11-30 | 2008-05-14 | Teijin Limited | Liquid crystal device and transparent conductive substrate suitable for the same |
| JP3862466B2 (ja) * | 2000-02-29 | 2006-12-27 | 三井化学株式会社 | 透明電極 |
| US20040229051A1 (en) * | 2003-05-15 | 2004-11-18 | General Electric Company | Multilayer coating package on flexible substrates for electro-optical devices |
| JP4742584B2 (ja) * | 2004-03-23 | 2011-08-10 | 株式会社豊田中央研究所 | 電極 |
| CN102714228A (zh) * | 2010-01-18 | 2012-10-03 | 应用材料公司 | 制造具有高转换效率的薄膜太阳能电池 |
| JP5077407B2 (ja) * | 2010-09-03 | 2012-11-21 | 大日本印刷株式会社 | 太陽電池および太陽電池モジュール |
| FR2973946B1 (fr) * | 2011-04-08 | 2013-03-22 | Saint Gobain | Dispositif électronique a couches |
| EP2720276A4 (en) * | 2011-06-10 | 2014-12-24 | Posco | SOLAR CELL SUBSTRATE, MANUFACTURING METHOD AND SOLAR CELL THEREFOR |
| US9018715B2 (en) * | 2012-11-30 | 2015-04-28 | Silicon Laboratories Inc. | Gas-diffusion barriers for MEMS encapsulation |
| TWI495404B (zh) * | 2013-06-21 | 2015-08-01 | Chi Mei Corp | 軟性基板用組成物及軟性基板 |
| EP3016162B1 (en) * | 2013-09-30 | 2020-07-22 | LG Chem, Ltd. | Substrate for organic electronic devices and production method therefor |
| EP2871681A1 (en) * | 2013-11-07 | 2015-05-13 | Saint-Gobain Glass France | Back contact substrate for a photovoltaic cell or module |
| JP2016103443A (ja) * | 2014-11-28 | 2016-06-02 | パイオニア株式会社 | 発光装置 |
| JP5994884B2 (ja) * | 2015-03-03 | 2016-09-21 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子および照明装置 |
| CN106158901B (zh) * | 2015-03-24 | 2020-06-23 | 上海和辉光电有限公司 | 一种混合型薄膜及其制备方法、以及柔性oled显示器 |
| US10573856B2 (en) * | 2015-05-14 | 2020-02-25 | GM Global Technology Operations LLC | Barrier layer coatings for battery pouch cell seal |
| WO2016190283A1 (ja) * | 2015-05-26 | 2016-12-01 | 東レ株式会社 | ピロメテンホウ素錯体、色変換組成物、色変換フィルムならびにそれを含む光源ユニット、ディスプレイおよび照明 |
-
2017
- 2017-01-25 PL PL420300A patent/PL233211B1/pl unknown
-
2018
- 2018-01-24 CN CN201880008575.4A patent/CN110291647B/zh active Active
- 2018-01-24 ES ES18711714T patent/ES2975275T3/es active Active
- 2018-01-24 JP JP2019539927A patent/JP7206559B2/ja active Active
- 2018-01-24 EP EP18711714.8A patent/EP3574528B1/en active Active
- 2018-01-24 FI FIEP18711714.8T patent/FI3574528T3/fi active
- 2018-01-24 WO PCT/PL2018/000008 patent/WO2018139945A1/en not_active Ceased
-
2019
- 2019-07-25 US US16/521,645 patent/US20190348621A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2020505736A5 (enExample) | ||
| JP7206559B2 (ja) | オプトエレクトロニクス箔およびオプトエレクトロニクス箔の製造方法 | |
| KR101680928B1 (ko) | 투명 전도성 산화물, 금속 및 산화물의 조합에 기초한 투명 전극 | |
| CN103608872B (zh) | 导电性层叠体、带图案布线的透明导电性层叠体、以及光学器件 | |
| US8766280B2 (en) | Protective substrate for a device that collects or emits radiation | |
| KR102194500B1 (ko) | 도전 필름 및 도전 필름을 갖는 전자 디바이스 | |
| JP2013510397A (ja) | 光電子デバイス用多層金属電極 | |
| WO2011029787A1 (en) | Layered element for encapsulating a sensitive element | |
| CN110033879A (zh) | 透明导电性薄膜及其制造方法 | |
| KR101809296B1 (ko) | 투명전극 및 이를 포함하는 전자 소자 | |
| Kim et al. | Design of a MoOx/Au/MoOx transparent electrode for high-performance OLEDs | |
| CN203589031U (zh) | 一种用于amoled聚合物衬底的抗激光损伤薄膜结构 | |
| JP6059575B2 (ja) | 透明電極付き基板の製造方法、および積層体 | |
| JP2018516431A5 (enExample) | ||
| CN105932172A (zh) | 一种可定量调节功函数的透明叠层电极及其制备工艺 | |
| JP2016536682A5 (enExample) | ||
| CN108388382A (zh) | 触控面板及其触控显示装置 | |
| KR20140090876A (ko) | 다층 구조의 투명 전극 | |
| Han et al. | Indium-free Cu/fluorine doped ZnO composite transparent conductive electrodes with stretchable and flexible performance on poly (ethylene terephthalate) substrate | |
| CN106165025A (zh) | 层叠体、导电性层叠体及电子设备 | |
| JP2024512522A (ja) | オプトエレクトロニクスデバイスのための光透過性多層構造 | |
| JP2014130825A (ja) | 導電性積層体、パターン配線付き透明導電性積層体、および光学デバイス。 | |
| TW201118889A (en) | Multi-layer transparent conductive film and method of manufacturing the same |