JP2020505736A - オプトエレクトロニクス箔およびオプトエレクトロニクス箔の製造方法 - Google Patents
オプトエレクトロニクス箔およびオプトエレクトロニクス箔の製造方法 Download PDFInfo
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- JP2020505736A JP2020505736A JP2019539927A JP2019539927A JP2020505736A JP 2020505736 A JP2020505736 A JP 2020505736A JP 2019539927 A JP2019539927 A JP 2019539927A JP 2019539927 A JP2019539927 A JP 2019539927A JP 2020505736 A JP2020505736 A JP 2020505736A
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- Prior art keywords
- oxide
- layer
- layers
- foil
- optoelectronic
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- 239000011888 foil Substances 0.000 title claims abstract description 73
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000004888 barrier function Effects 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 43
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229920000052 poly(p-xylylene) Polymers 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 8
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 7
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 283
- 238000000034 method Methods 0.000 claims description 44
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 26
- 239000002356 single layer Substances 0.000 claims description 22
- 238000000231 atomic layer deposition Methods 0.000 claims description 14
- -1 polyethylene terephthalate Polymers 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 239000011651 chromium Substances 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 11
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 10
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 10
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910003437 indium oxide Inorganic materials 0.000 claims description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229920003023 plastic Polymers 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229920000573 polyethylene Polymers 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 229920001155 polypropylene Polymers 0.000 claims description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000001017 electron-beam sputter deposition Methods 0.000 claims description 5
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000003851 corona treatment Methods 0.000 claims description 3
- 239000002114 nanocomposite Substances 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical group 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium dioxide Chemical compound O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 abstract 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 2
- 229910017105 AlOxNy Inorganic materials 0.000 abstract 1
- 229910004205 SiNX Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910000424 chromium(II) oxide Inorganic materials 0.000 abstract 1
- ZWPVWTIRZYDPKW-UHFFFAOYSA-N chromium(VI) oxide peroxide Inorganic materials [O-2].[O-][Cr]([O-])(=O)=O ZWPVWTIRZYDPKW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 230000008569 process Effects 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000001429 visible spectrum Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002938 p-xylenes Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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Abstract
Description
−プラズマ励起化学気相成長法(PECVD)は、無機および無機のバリアまたは有機および有機のバリアを、通常、窒化ケイ素または二酸化ケイ素を用いるプロセスで処理することを含む。この技術の利点は、低温プロセス(600℃未満)、および非平衡相の堆積の可能性、ならびに得られるコーティングの純度が比較的高いことにある。
−原子層堆積技術(ALD)、これはバリア膜を堆積することを含む。この技術は、堆積用に酸化アルミニウムおよび窒化アルミニウムを使用している。この方法の利点は、比較的良好な気密性を特徴とするコーティングを得ることが可能になることである。
Claims (15)
- 基板と、少なくとも1つの金属層を有する導電層とを備えるオプトエレクトロニクス箔であって、
前記導電層と前記基板との間に、前記オプトエレクトロニクス箔は、酸化ケイ素(SiOx)、酸化アルミニウム(Al2O3、AlOxNy)、酸化チタン(TiOx)、酸窒化ケイ素(SiON)、窒化ケイ素(Si3N4、SiNx)、有機ケイ素化合物(SiCxHy)、酸化ジルコニウム(ZrO2)、酸化ハフニウム(HfO2)、酸化クロム(CrO、Cr2O3、CrO2、CrO3、CrO5)、およびパリレンからなる群から選択される少なくとも1つの材料を含むバリア層を有し、
前記導電層はさらに、少なくとも2つの隣接する酸化物層を有し、前記少なくとも1つの金属層は、2つの隣接する酸化物層の間に配置された単層の金属であり、
各酸化物層は、ZnO、AZO(酸化アルミニウム亜鉛)、SnO2、IZO(酸化亜鉛インジウム)、FTO(フッ素ドープ酸化錫)、ZTO(酸化亜鉛錫)、ITO(酸化インジウム錫)、GZO(酸化ガリウム亜鉛)、GIO(酸化ガリウムインジウム)、In2O3、Sb:SnO2、IO:H(水素ドープ酸化インジウム)、CdO、Zn2SnO4、ZnSnO3、Zn2In2O5、NiOx、NiOx:Li、TiOx、ZnS、ZnSe、Te2O3、MoOx、V2O5、およびWO3からなる群から選択される少なくとも1つの酸化物で作られ、
前記2つの隣接する酸化物層のうちの少なくとも1つは、
・単層構造、または、
・前記酸化物層内で互いに重ねて積層された少なくとも2つの副層からなる多層構造
のいずれかであり、前記少なくとも2つの副層のうちの1つは、別の副層とは異なる材料で作られる、オプトエレクトロニクス箔。 - 前記バリア層は単層構造である、請求項1に記載のオプトエレクトロニクス箔。
- 前記バリア層は、前記バリア層内に互いに重ねて積層された少なくとも2つの副層からなる多層構造であり、前記少なくとも2つの副層のうちの1つは別の副層とは異なる材料で作られる、請求項1に記載のオプトエレクトロニクス箔。
- 前記基板は、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレン(PEN)、ポリエチレン(PE)、ポリプロピレン(PP)、ポリエーテルスルホン(PES)、ポリイミド(PI)、ポリスチレン(PS)、エチレン/テトラフルオロエチレン(ETFE)およびパリレンからなる群から選択される少なくとも1つのプラスチックで作られる、請求項1から3のいずれか一項に記載のオプトエレクトロニクス箔。
- 前記基板は無機ナノ複合材料でドープされている、請求項4に記載のオプトエレクトロニクス箔。
- 前記金属層は、Al、Ti、Ni、Cr、Au、Mg、Ta、Ge、Ag、Cu、Zr、Pt、およびWからなる群から選択される1つの材料で作られる、請求項1から5のいずれか一項に記載のオプトエレクトロニクス箔。
- 前記導電層は、隣接する酸化物層の間に交互に配置されたn個の酸化物層と(n−1)個の金属層とを有する、請求項1から6のいずれか一項に記載のオプトエレクトロニクス箔。
- オプトエレクトロニクス箔の製造方法であって、
バリア層が堆積される基板の選択表面を洗浄して活性化する段階と、
洗浄され活性化された前記基板上に前記バリア層を形成する段階と、
前記バリア層を形成した後に、少なくとも1つの金属層の堆積を含む導電層を形成する段階とを備え、
前記バリア層を形成する前記段階は、酸化ケイ素(SiOx)、酸化アルミニウム(Al2O3、AlOxNy)、酸化チタン(TiOx)、酸窒化ケイ素(SiON)、窒化ケイ素(Si3N4、SiNx)、有機ケイ素化合物(SiCxHy)、酸化ジルコニウム(ZrO2)、酸化ハフニウム(HfO2)、酸化クロム(CrO、Cr2O3、CrO2、CrO3、CrO5)、およびパリレンからなる群から選択される少なくとも1つの材料を堆積する段階を有し、
前記導電層を形成する前記段階はさらに、少なくとも2つの隣接する金属酸化物層を堆積する段階を有し、前記少なくとも2つの隣接する金属酸化物層はそれぞれ、ZnO、AZO(酸化アルミニウム亜鉛)、SnO2、IZO(酸化亜鉛インジウム)、FTO(フッ素ドープ酸化錫)、ZTO(酸化亜鉛錫)、ITO(酸化インジウム錫)、GZO(酸化ガリウム亜鉛)、GIO(酸化ガリウムインジウム)、In2O3、Sb:SnO2、IO:H(水素ドープ酸化インジウム)、CdO、Zn2SnO4、ZnSnO3、Zn2In2O5、NiOx、NiOx:Li、TiOx、ZnS、ZnSe、Te2O3、MoOx、V2O5、およびWO3からなる群から選択される少なくとも1つの酸化物を含み、前記少なくとも1つの金属層を堆積する段階は、Al、Ti、Ni、Cr、Au、Mg、Ta、Ge、Ag、Cu、Zr、Pt、およびWからなる群から選択される金属の単層を堆積する段階を有し、
前記導電層を形成する段階は、第1の酸化物層、金属層、および第2の酸化物層を連続的に前記バリア層上に形成する段階を有する、方法。 - 前記バリア層は、単層構造を有するバリア層を形成するために、前記基板上に1つの層の材料を堆積することによって形成される、請求項8に記載の方法。
- 前記バリア層は、多層構造を有する前記バリア層を形成するために、前記基板上に異なる材料の少なくとも2つの副層を堆積することによって形成される、請求項8または9に記載の方法。
- 前記バリア層上に、酸化物層と金属層との交互配置で、n個の酸化物層と(n−1)個の金属層とが互いに重ねて個別に形成されるように前記導電層が形成され、nは自然数である、請求項8から10のいずれか一項に記載の方法。
- 少なくとも1つの酸化物層が、単層構造を有する酸化物層を形成するために、1つの層の酸化物材料を堆積することによって形成される、請求項8から11のいずれか一項に記載の方法。
- 少なくとも1つの酸化物層が、多層構造を有する酸化物層を形成するために、異なる材料の少なくとも2つの酸化物副層を堆積することによって形成される、請求項8から11のいずれか一項に記載の方法。
- 前記基板は、プラズマ処理、コロナ放電処理、二酸化炭素処理、紫外線照射およびオゾン処理、ならびにアセトン、イソプロパノール、水、アセトンと水の混合液、およびイソプロパノールと水の混合液からなる群から選択される溶媒を用いた洗浄、からなる群から選択される少なくとも1つの技術を用いて洗浄され活性化される、請求項8から13のいずれか一項に記載の方法。
- 前記バリア層および前記導電層は、原子層堆積(ALD)、マグネトロンスパッタリング、電子ビームスパッタリング法、および熱蒸着法からなる群から選択される少なくとも1つの技術を用いて、前記基板上に別個に堆積される、請求項8から14のいずれか一項に記載の方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022050045A1 (ja) * | 2020-09-04 | 2022-03-10 | デクセリアルズ株式会社 | 導電性積層体及びこれを用いた光学装置、導電性積層体の製造方法 |
JP2022043998A (ja) * | 2020-09-04 | 2022-03-16 | デクセリアルズ株式会社 | 導電性積層体及びこれを用いた光学装置、導電性積層体の製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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PL425218A1 (pl) * | 2018-04-13 | 2019-10-21 | Centrum Badań I Rozwoju Technologii Dla Przemysłu Spółka Akcyjna | Krzemowe ogniwo fotowoltaiczne i sposób wytwarzania krzemowych ogniw fotowoltaicznych |
CN109979977A (zh) | 2019-03-28 | 2019-07-05 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板及其制备方法 |
US20230072120A1 (en) * | 2020-02-04 | 2023-03-09 | Mitsui Mining & Smelting Co., Ltd. | Metal foil with carrier |
CN111638610A (zh) * | 2020-07-20 | 2020-09-08 | 宁波材料所杭州湾研究院 | 一种兼具可见光高透过和隔热的柔性智能调光膜及其制备方法 |
EP4064378B1 (en) | 2021-03-23 | 2024-03-06 | Saule S.A. | A light-transmissive multilayer structure for optoelectronic devices |
US11545453B2 (en) * | 2021-04-19 | 2023-01-03 | Nanya Technology Corporation | Semiconductor device with barrier layer and method for fabricating the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1024520A (ja) * | 1996-07-11 | 1998-01-27 | Mitsui Petrochem Ind Ltd | 透明導電性積層体 |
JP2001243840A (ja) * | 2000-02-29 | 2001-09-07 | Mitsui Chemicals Inc | 透明電極 |
JP2005310745A (ja) * | 2004-03-23 | 2005-11-04 | Toyota Central Res & Dev Lab Inc | 電極 |
JP2014516455A (ja) * | 2011-04-08 | 2014-07-10 | サン−ゴバン グラス フランス | 多層電子デバイス |
JP2015099804A (ja) * | 2015-03-03 | 2015-05-28 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子および照明装置 |
JP2016103443A (ja) * | 2014-11-28 | 2016-06-02 | パイオニア株式会社 | 発光装置 |
CN106158901A (zh) * | 2015-03-24 | 2016-11-23 | 上海和辉光电有限公司 | 一种混合型薄膜及其制备方法、以及柔性oled显示器 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011087878A2 (en) * | 2010-01-18 | 2011-07-21 | Applied Materials, Inc. | Manufacture of thin film solar cells with high conversion efficiency |
JP5077407B2 (ja) * | 2010-09-03 | 2012-11-21 | 大日本印刷株式会社 | 太陽電池および太陽電池モジュール |
WO2012169845A2 (ko) * | 2011-06-10 | 2012-12-13 | 주식회사 포스코 | 태양전지 기판과 그 제조방법 및 이를 이용한 태양전지 |
KR101642589B1 (ko) * | 2013-09-30 | 2016-07-29 | 주식회사 엘지화학 | 유기전자소자용 기판 및 이의 제조방법 |
EP2871681A1 (en) * | 2013-11-07 | 2015-05-13 | Saint-Gobain Glass France | Back contact substrate for a photovoltaic cell or module |
US10573856B2 (en) * | 2015-05-14 | 2020-02-25 | GM Global Technology Operations LLC | Barrier layer coatings for battery pouch cell seal |
SG11201709751SA (en) * | 2015-05-26 | 2017-12-28 | Toray Industries | Pyrromethene-boron complex, color-changing composition, color-changing film, light source unit including same, display, and lighting |
-
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- 2017-01-25 PL PL420300A patent/PL233211B1/pl unknown
-
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-
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- 2019-07-25 US US16/521,645 patent/US20190348621A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1024520A (ja) * | 1996-07-11 | 1998-01-27 | Mitsui Petrochem Ind Ltd | 透明導電性積層体 |
JP2001243840A (ja) * | 2000-02-29 | 2001-09-07 | Mitsui Chemicals Inc | 透明電極 |
JP2005310745A (ja) * | 2004-03-23 | 2005-11-04 | Toyota Central Res & Dev Lab Inc | 電極 |
JP2014516455A (ja) * | 2011-04-08 | 2014-07-10 | サン−ゴバン グラス フランス | 多層電子デバイス |
JP2016103443A (ja) * | 2014-11-28 | 2016-06-02 | パイオニア株式会社 | 発光装置 |
JP2015099804A (ja) * | 2015-03-03 | 2015-05-28 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子および照明装置 |
CN106158901A (zh) * | 2015-03-24 | 2016-11-23 | 上海和辉光电有限公司 | 一种混合型薄膜及其制备方法、以及柔性oled显示器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022050045A1 (ja) * | 2020-09-04 | 2022-03-10 | デクセリアルズ株式会社 | 導電性積層体及びこれを用いた光学装置、導電性積層体の製造方法 |
JP2022043998A (ja) * | 2020-09-04 | 2022-03-16 | デクセリアルズ株式会社 | 導電性積層体及びこれを用いた光学装置、導電性積層体の製造方法 |
JP7230131B2 (ja) | 2020-09-04 | 2023-02-28 | デクセリアルズ株式会社 | 導電性積層体及びこれを用いた光学装置、導電性積層体の製造方法 |
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