JP2020167308A - 基板処理装置、および基板処理方法 - Google Patents
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- 238000012545 processing Methods 0.000 title claims abstract description 152
- 239000000758 substrate Substances 0.000 title claims abstract description 128
- 238000003672 processing method Methods 0.000 title claims description 9
- 238000002156 mixing Methods 0.000 claims abstract description 185
- 239000007788 liquid Substances 0.000 claims abstract description 167
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 166
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 83
- 239000000654 additive Substances 0.000 claims abstract description 27
- 230000000996 additive effect Effects 0.000 claims abstract description 25
- 239000002994 raw material Substances 0.000 claims abstract description 22
- 238000012937 correction Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 118
- 239000000377 silicon dioxide Substances 0.000 claims description 53
- 238000001556 precipitation Methods 0.000 claims description 49
- 239000003112 inhibitor Substances 0.000 claims description 47
- 239000011259 mixed solution Substances 0.000 claims description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 abstract description 15
- 238000012546 transfer Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 50
- 229910052710 silicon Inorganic materials 0.000 description 50
- 239000010703 silicon Substances 0.000 description 50
- 238000010586 diagram Methods 0.000 description 15
- 238000003860 storage Methods 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F31/00—Mixers with shaking, oscillating, or vibrating mechanisms
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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Abstract
Description
処理液の原料である第1リン酸と添加剤とを予め定めた混合比で混合し、混合液を調製する混合部と、
前記処理液の原料の混合比を補正する混合比補正部と、
前記処理液で基板を処理する処理部とを備え、
前記混合部は、前記混合液を溜める混合タンクと、前記混合タンクに対して前記第1リン酸を供給する第1リン酸供給部と、前記混合タンクに対して前記添加剤を供給する添加剤供給部とを含み、
前記混合比補正部は、前記混合部から前記処理部に前記混合液を送る送液ラインと、前記送液ラインの途中にて前記第2リン酸を供給する第2リン酸供給部とを備える。
2 基板
22 シリコン酸化膜
23 シリコン窒化膜
24 積層膜
25 開口部
27 パターン
3 処理液
5 混合部
51 混合タンク
52 第1リン酸供給部
53 第1添加剤供給部
54 循環ライン
6 混合比補正部
61 送液ライン
61a 上流ライン
61b 下流ライン(個別配管)
62 第2リン酸供給部
65 バッファタンク
66 循環ライン
7 処理部
9 制御部
Claims (17)
- 処理液の原料である第1リン酸と添加剤とを予め定めた混合比で混合し、混合液を調製する混合部と、
前記処理液の原料の混合比を補正する混合比補正部と、
前記処理液で基板を処理する処理部とを備え、
前記混合部は、前記混合液を溜める混合タンクと、前記混合タンクに対して前記第1リン酸を供給する第1リン酸供給部と、前記混合タンクに対して前記添加剤を供給する添加剤供給部とを含み、
前記混合比補正部は、前記混合部から前記処理部に前記混合液を送る送液ラインと、前記送液ラインの途中にて第2リン酸を供給する第2リン酸供給部とを備える、基板処理装置。 - 前記第1リン酸と前記添加剤との第1混合比と、前記混合液と前記第2リン酸との第2混合比とを制御する制御部を備える、請求項1に記載の基板処理装置。
- 前記制御部は、前記基板の処理条件に基づき、前記第1混合比および前記第2混合比のうちの少なくとも1つを変更する、請求項2に記載の基板処理装置。
- 前記基板の処理条件は、前記基板の前記処理液で処理されるパターンである、請求項3に記載の基板処理装置。
- 前記混合部は、前記混合タンクを複数有する、請求項2〜4のいずれか1項に記載の基板処理装置。
- 前記制御部は、一の前記混合タンクから調製済みの前記混合液を取り出し、前記処理部に向けて送る間に、他の一の前記混合タンクにて前記混合液を調製する、請求項5に記載の基板処理装置。
- 前記制御部は、複数の前記混合タンクの中で、前記処理部に向けて調製済みの前記混合液を送り出すものを、予め定めた順番で切り替える、請求項5または6に記載の基板処理装置。
- 前記処理部は、複数設けられ、
前記送液ラインは、複数の前記処理部に対して個別に前記混合液を送液する個別配管を含む、請求項1〜7のいずれか1項に記載の基板処理装置。 - 前記混合比補正部は、前記送液ラインの途中に、前記混合液と前記第2リン酸とを一時的に溜めるバッファタンクを含む、請求項1〜8のいずれか1項に記載の基板処理装置。
- 前記混合比補正部は、前記バッファタンクから取り出した前記処理液を、前記バッファタンクに戻す循環ラインを備える、請求項9に記載の基板処理装置。
- 処理液の原料である第1リン酸と添加剤とを予め定めた第1混合比で混合し、混合液を調製することと、
前記混合液と第2リン酸とを予め定めた第2混合比で混合し、前記処理液の原料の混合比を補正することと、
前記処理液で基板を処理することとを含む、基板処理方法。 - 前記基板の処理条件に基づき、前記第1混合比と、前記第2混合比とのうちの少なくとも1つを変更する、請求項11に記載の基板処理方法。
- 前記基板の処理条件は、前記基板の前記処理液で処理されるパターンである、請求項12に記載の基板処理方法。
- 一の混合タンクから調製済みの前記混合液を取り出し、前記基板を処理する処理部に向けて送る間に、他の一の混合タンクにて前記混合液を調製することを含む、請求項11〜13のいずれか1項に記載の基板処理方法。
- 複数の混合タンクの中で、前記基板を処理する処理部に向けて、調製済みの前記混合液を送り出すものを、予め定めた順番で切り替えることを含む、請求項11〜14のいずれか1項に記載の基板処理方法。
- 前記基板は、シリコン酸化膜とシリコン窒化膜とを交互に含む積層膜を含み、
前記積層膜は、前記積層膜を厚さ方向に貫通する開口部を有し、
前記処理液は、前記シリコン酸化膜と前記シリコン窒化膜のうちの、前記シリコン窒化膜を選択的にエッチングする、請求項11〜15のいずれか1項に記載の基板処理方法。 - 前記添加剤は、シリカの析出を抑制するシリカ析出抑制剤である、請求項16に記載の基板処理方法。
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KR1020200036968A KR20200115316A (ko) | 2019-03-29 | 2020-03-26 | 기판 처리 장치, 및 기판 처리 방법 |
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WO2023026828A1 (ja) * | 2021-08-27 | 2023-03-02 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
WO2023223908A1 (ja) * | 2022-05-17 | 2023-11-23 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
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KR102583556B1 (ko) | 2021-01-07 | 2023-10-10 | 세메스 주식회사 | 처리액 공급 장치 및 처리액 공급 장치의 고형 제거 방법 |
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US20200312682A1 (en) | 2020-10-01 |
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