JP2020126899A5 - - Google Patents
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- JP2020126899A5 JP2020126899A5 JP2019017380A JP2019017380A JP2020126899A5 JP 2020126899 A5 JP2020126899 A5 JP 2020126899A5 JP 2019017380 A JP2019017380 A JP 2019017380A JP 2019017380 A JP2019017380 A JP 2019017380A JP 2020126899 A5 JP2020126899 A5 JP 2020126899A5
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- 239000000758 substrate Substances 0.000 claims description 36
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 24
- 229910052717 sulfur Inorganic materials 0.000 claims description 24
- 239000011593 sulfur Substances 0.000 claims description 24
- 238000003672 processing method Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019017380A JP7229033B2 (ja) | 2019-02-01 | 2019-02-01 | 基板処理方法及び基板処理装置 |
| KR1020200009876A KR102931166B1 (ko) | 2019-02-01 | 2020-01-28 | 기판 처리 방법 및 기판 처리 장치 |
| US16/776,774 US11139161B2 (en) | 2019-02-01 | 2020-01-30 | Method of processing substrates and substrate processing apparatus |
| CN202010078704.6A CN111524807A (zh) | 2019-02-01 | 2020-02-03 | 基板处理方法和基板处理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019017380A JP7229033B2 (ja) | 2019-02-01 | 2019-02-01 | 基板処理方法及び基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020126899A JP2020126899A (ja) | 2020-08-20 |
| JP2020126899A5 true JP2020126899A5 (https=) | 2022-01-21 |
| JP7229033B2 JP7229033B2 (ja) | 2023-02-27 |
Family
ID=71835753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019017380A Active JP7229033B2 (ja) | 2019-02-01 | 2019-02-01 | 基板処理方法及び基板処理装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11139161B2 (https=) |
| JP (1) | JP7229033B2 (https=) |
| KR (1) | KR102931166B1 (https=) |
| CN (1) | CN111524807A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102670179B1 (ko) * | 2020-09-09 | 2024-05-28 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법, 및 기판 처리 장치 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2979563B2 (ja) * | 1990-01-13 | 1999-11-15 | ソニー株式会社 | 半導体装置の製造方法 |
| JPH03231426A (ja) * | 1990-02-07 | 1991-10-15 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0722398A (ja) * | 1993-06-23 | 1995-01-24 | Yamaha Corp | ドライエッチング方法 |
| JP5530088B2 (ja) * | 2008-10-20 | 2014-06-25 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| JP5606060B2 (ja) * | 2009-12-24 | 2014-10-15 | 東京エレクトロン株式会社 | エッチング方法及びエッチング処理装置 |
| JP5968130B2 (ja) * | 2012-07-10 | 2016-08-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN103107085B (zh) * | 2013-01-31 | 2016-02-10 | 电子科技大学 | 一种NiCr薄膜的干法刻蚀工艺 |
| JP6423643B2 (ja) * | 2014-08-08 | 2018-11-14 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
| JP6328524B2 (ja) * | 2014-08-29 | 2018-05-23 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6498022B2 (ja) * | 2015-04-22 | 2019-04-10 | 東京エレクトロン株式会社 | エッチング処理方法 |
| US9613824B2 (en) * | 2015-05-14 | 2017-04-04 | Tokyo Electron Limited | Etching method |
| JP6498152B2 (ja) * | 2015-12-18 | 2019-04-10 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6604911B2 (ja) * | 2016-06-23 | 2019-11-13 | 東京エレクトロン株式会社 | エッチング処理方法 |
| US10658194B2 (en) * | 2016-08-23 | 2020-05-19 | Lam Research Corporation | Silicon-based deposition for semiconductor processing |
| KR102356741B1 (ko) | 2017-05-31 | 2022-01-28 | 삼성전자주식회사 | 절연층들을 갖는 반도체 소자 및 그 제조 방법 |
| US10811267B2 (en) * | 2017-12-21 | 2020-10-20 | Micron Technology, Inc. | Methods of processing semiconductor device structures and related systems |
-
2019
- 2019-02-01 JP JP2019017380A patent/JP7229033B2/ja active Active
-
2020
- 2020-01-28 KR KR1020200009876A patent/KR102931166B1/ko active Active
- 2020-01-30 US US16/776,774 patent/US11139161B2/en active Active
- 2020-02-03 CN CN202010078704.6A patent/CN111524807A/zh active Pending
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