JP7229033B2 - 基板処理方法及び基板処理装置 - Google Patents

基板処理方法及び基板処理装置 Download PDF

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Publication number
JP7229033B2
JP7229033B2 JP2019017380A JP2019017380A JP7229033B2 JP 7229033 B2 JP7229033 B2 JP 7229033B2 JP 2019017380 A JP2019017380 A JP 2019017380A JP 2019017380 A JP2019017380 A JP 2019017380A JP 7229033 B2 JP7229033 B2 JP 7229033B2
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region
flow rate
substrate
sulfur
containing gas
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Japanese (ja)
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JP2020126899A (ja
JP2020126899A5 (https=
Inventor
秀樹 水野
敬紀 鈴木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2019017380A priority Critical patent/JP7229033B2/ja
Priority to KR1020200009876A priority patent/KR102931166B1/ko
Priority to US16/776,774 priority patent/US11139161B2/en
Priority to CN202010078704.6A priority patent/CN111524807A/zh
Publication of JP2020126899A publication Critical patent/JP2020126899A/ja
Publication of JP2020126899A5 publication Critical patent/JP2020126899A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2019017380A 2019-02-01 2019-02-01 基板処理方法及び基板処理装置 Active JP7229033B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019017380A JP7229033B2 (ja) 2019-02-01 2019-02-01 基板処理方法及び基板処理装置
KR1020200009876A KR102931166B1 (ko) 2019-02-01 2020-01-28 기판 처리 방법 및 기판 처리 장치
US16/776,774 US11139161B2 (en) 2019-02-01 2020-01-30 Method of processing substrates and substrate processing apparatus
CN202010078704.6A CN111524807A (zh) 2019-02-01 2020-02-03 基板处理方法和基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019017380A JP7229033B2 (ja) 2019-02-01 2019-02-01 基板処理方法及び基板処理装置

Publications (3)

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JP2020126899A JP2020126899A (ja) 2020-08-20
JP2020126899A5 JP2020126899A5 (https=) 2022-01-21
JP7229033B2 true JP7229033B2 (ja) 2023-02-27

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JP2019017380A Active JP7229033B2 (ja) 2019-02-01 2019-02-01 基板処理方法及び基板処理装置

Country Status (4)

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US (1) US11139161B2 (https=)
JP (1) JP7229033B2 (https=)
KR (1) KR102931166B1 (https=)
CN (1) CN111524807A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102670179B1 (ko) * 2020-09-09 2024-05-28 가부시키가이샤 스크린 홀딩스 기판 처리 방법, 및 기판 처리 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011134896A (ja) 2009-12-24 2011-07-07 Tokyo Electron Ltd エッチング方法及びエッチング処理装置
JP2016051750A (ja) 2014-08-29 2016-04-11 東京エレクトロン株式会社 エッチング方法
JP2017118091A (ja) 2015-12-18 2017-06-29 東京エレクトロン株式会社 エッチング方法
JP2017228690A (ja) 2016-06-23 2017-12-28 東京エレクトロン株式会社 エッチング処理方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2979563B2 (ja) * 1990-01-13 1999-11-15 ソニー株式会社 半導体装置の製造方法
JPH03231426A (ja) * 1990-02-07 1991-10-15 Fujitsu Ltd 半導体装置の製造方法
JPH0722398A (ja) * 1993-06-23 1995-01-24 Yamaha Corp ドライエッチング方法
JP5530088B2 (ja) * 2008-10-20 2014-06-25 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN103107085B (zh) * 2013-01-31 2016-02-10 电子科技大学 一种NiCr薄膜的干法刻蚀工艺
JP6423643B2 (ja) * 2014-08-08 2018-11-14 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6498022B2 (ja) * 2015-04-22 2019-04-10 東京エレクトロン株式会社 エッチング処理方法
US9613824B2 (en) * 2015-05-14 2017-04-04 Tokyo Electron Limited Etching method
US10658194B2 (en) * 2016-08-23 2020-05-19 Lam Research Corporation Silicon-based deposition for semiconductor processing
KR102356741B1 (ko) 2017-05-31 2022-01-28 삼성전자주식회사 절연층들을 갖는 반도체 소자 및 그 제조 방법
US10811267B2 (en) * 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011134896A (ja) 2009-12-24 2011-07-07 Tokyo Electron Ltd エッチング方法及びエッチング処理装置
JP2016051750A (ja) 2014-08-29 2016-04-11 東京エレクトロン株式会社 エッチング方法
JP2017118091A (ja) 2015-12-18 2017-06-29 東京エレクトロン株式会社 エッチング方法
JP2017228690A (ja) 2016-06-23 2017-12-28 東京エレクトロン株式会社 エッチング処理方法

Also Published As

Publication number Publication date
CN111524807A (zh) 2020-08-11
JP2020126899A (ja) 2020-08-20
US11139161B2 (en) 2021-10-05
KR20200096142A (ko) 2020-08-11
KR102931166B1 (ko) 2026-02-25
US20200251329A1 (en) 2020-08-06

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