CN111524807A - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

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Publication number
CN111524807A
CN111524807A CN202010078704.6A CN202010078704A CN111524807A CN 111524807 A CN111524807 A CN 111524807A CN 202010078704 A CN202010078704 A CN 202010078704A CN 111524807 A CN111524807 A CN 111524807A
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China
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region
substrate
flow rate
sulfur
containing gas
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Pending
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CN202010078704.6A
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English (en)
Chinese (zh)
Inventor
水野秀树
铃木敬纪
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN111524807A publication Critical patent/CN111524807A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN202010078704.6A 2019-02-01 2020-02-03 基板处理方法和基板处理装置 Pending CN111524807A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-017380 2019-02-01
JP2019017380A JP7229033B2 (ja) 2019-02-01 2019-02-01 基板処理方法及び基板処理装置

Publications (1)

Publication Number Publication Date
CN111524807A true CN111524807A (zh) 2020-08-11

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ID=71835753

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010078704.6A Pending CN111524807A (zh) 2019-02-01 2020-02-03 基板处理方法和基板处理装置

Country Status (4)

Country Link
US (1) US11139161B2 (https=)
JP (1) JP7229033B2 (https=)
KR (1) KR102931166B1 (https=)
CN (1) CN111524807A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114242614A (zh) * 2020-09-09 2022-03-25 株式会社斯库林集团 基板处理方法以及基板处理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03211728A (ja) * 1990-01-13 1991-09-17 Sony Corp 半導体装置の製造方法
JPH03231426A (ja) * 1990-02-07 1991-10-15 Fujitsu Ltd 半導体装置の製造方法
JPH0722398A (ja) * 1993-06-23 1995-01-24 Yamaha Corp ドライエッチング方法
CN102187439A (zh) * 2008-10-20 2011-09-14 东京毅力科创株式会社 等离子体蚀刻方法及等离子体蚀刻装置
CN103107085A (zh) * 2013-01-31 2013-05-15 电子科技大学 一种NiCr薄膜的干法刻蚀工艺
US20160314986A1 (en) * 2015-04-22 2016-10-27 Tokyo Electron Limited Etching method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5606060B2 (ja) * 2009-12-24 2014-10-15 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6423643B2 (ja) * 2014-08-08 2018-11-14 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6328524B2 (ja) * 2014-08-29 2018-05-23 東京エレクトロン株式会社 エッチング方法
US9613824B2 (en) * 2015-05-14 2017-04-04 Tokyo Electron Limited Etching method
JP6498152B2 (ja) * 2015-12-18 2019-04-10 東京エレクトロン株式会社 エッチング方法
JP6604911B2 (ja) * 2016-06-23 2019-11-13 東京エレクトロン株式会社 エッチング処理方法
US10658194B2 (en) * 2016-08-23 2020-05-19 Lam Research Corporation Silicon-based deposition for semiconductor processing
KR102356741B1 (ko) 2017-05-31 2022-01-28 삼성전자주식회사 절연층들을 갖는 반도체 소자 및 그 제조 방법
US10811267B2 (en) * 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03211728A (ja) * 1990-01-13 1991-09-17 Sony Corp 半導体装置の製造方法
JPH03231426A (ja) * 1990-02-07 1991-10-15 Fujitsu Ltd 半導体装置の製造方法
JPH0722398A (ja) * 1993-06-23 1995-01-24 Yamaha Corp ドライエッチング方法
CN102187439A (zh) * 2008-10-20 2011-09-14 东京毅力科创株式会社 等离子体蚀刻方法及等离子体蚀刻装置
CN103107085A (zh) * 2013-01-31 2013-05-15 电子科技大学 一种NiCr薄膜的干法刻蚀工艺
US20160314986A1 (en) * 2015-04-22 2016-10-27 Tokyo Electron Limited Etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114242614A (zh) * 2020-09-09 2022-03-25 株式会社斯库林集团 基板处理方法以及基板处理装置

Also Published As

Publication number Publication date
JP7229033B2 (ja) 2023-02-27
JP2020126899A (ja) 2020-08-20
US11139161B2 (en) 2021-10-05
KR20200096142A (ko) 2020-08-11
KR102931166B1 (ko) 2026-02-25
US20200251329A1 (en) 2020-08-06

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