JP2020027888A - キャリア板の除去方法 - Google Patents
キャリア板の除去方法 Download PDFInfo
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- JP2020027888A JP2020027888A JP2018152308A JP2018152308A JP2020027888A JP 2020027888 A JP2020027888 A JP 2020027888A JP 2018152308 A JP2018152308 A JP 2018152308A JP 2018152308 A JP2018152308 A JP 2018152308A JP 2020027888 A JP2020027888 A JP 2020027888A
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- 239000005388 borosilicate glass Substances 0.000 description 2
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
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- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
- Treatment Of Liquids With Adsorbents In General (AREA)
Abstract
Description
3 キャリア板
3a 第1面(表面)
3b 第2面(裏面)
3c 段差部
3d,3e,3f,3g 角
5 仮接着層
7 ワーク
7a 第1面(表面)
2 切削装置
4 チャックテーブル(第1保持手段、第1保持ユニット)
6 枠体
6a 流路
8 保持板
8a 保持面
10 バルブ
12 吸引源
14 切削ユニット
16 スピンドル
18 切削ブレード
22 除去装置
24 チャックテーブル(第2保持手段、第2保持ユニット)
26 枠体
26a 流路
28 保持板
28a 保持面
30 バルブ
32 吸引源
34 除去アーム(除去手段、除去ユニット)
34a 流路
Claims (2)
- キャリア板の表面に仮接着層を介して設けられたワークから該キャリア板を除去するキャリア板の除去方法であって、
該キャリア板を第1保持手段で保持して該ワークを露出させる第1保持ステップと、
該第1保持ステップを実施した後、該ワーク側から該キャリア板の外周縁に沿って該キャリア板を加工し、該キャリア板の外周縁に裏面側が表面側より外向きに突出した段差部を形成する段差部形成ステップと、
該段差部形成ステップを実施した後、該ワークを第2保持手段で保持して該キャリア板を露出させる第2保持ステップと、
該第2保持ステップを実施した後、除去手段で該段差部に力を加えて該キャリア板を該ワークから離れる方向に移動させることで該ワークから該キャリア板を除去するキャリア板除去ステップと、を備えたことを特徴とするキャリア板の除去方法。 - 該キャリア板除去ステップでは、除去手段で該段差部に力を加えながら該ワークと該キャリア板との間に流体を吹き付けることを特徴とする請求項1に記載のキャリア板の除去方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018152308A JP7187112B2 (ja) | 2018-08-13 | 2018-08-13 | キャリア板の除去方法 |
CN201910659183.0A CN110828362B (zh) | 2018-08-13 | 2019-07-22 | 载板的去除方法 |
SG10201906894XA SG10201906894XA (en) | 2018-08-13 | 2019-07-25 | Carrier plate removing method |
KR1020190093083A KR20200019086A (ko) | 2018-08-13 | 2019-07-31 | 캐리어판의 제거 방법 |
TW108128059A TWI790395B (zh) | 2018-08-13 | 2019-08-07 | 載板的去除方法 |
US16/535,413 US10804131B2 (en) | 2018-08-13 | 2019-08-08 | Carrier plate removing method |
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JP7511979B2 (ja) | 2020-07-20 | 2024-07-08 | 株式会社ディスコ | キャリア板の除去方法 |
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JP7262903B2 (ja) * | 2019-08-26 | 2023-04-24 | 株式会社ディスコ | キャリア板の除去方法 |
JP7511980B2 (ja) * | 2020-07-21 | 2024-07-08 | 株式会社ディスコ | キャリア板の除去方法 |
JP2022164271A (ja) * | 2021-04-16 | 2022-10-27 | 株式会社ディスコ | 積層デバイスチップの製造方法 |
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JP7187112B2 (ja) | 2022-12-12 |
TWI790395B (zh) | 2023-01-21 |
DE102019212100A1 (de) | 2020-02-13 |
CN110828362B (zh) | 2024-02-20 |
US20200051847A1 (en) | 2020-02-13 |
KR20200019086A (ko) | 2020-02-21 |
SG10201906894XA (en) | 2020-03-30 |
TW202010058A (zh) | 2020-03-01 |
CN110828362A (zh) | 2020-02-21 |
DE102019212100B4 (de) | 2022-12-29 |
US10804131B2 (en) | 2020-10-13 |
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