JP2019536260A5 - - Google Patents
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- JP2019536260A5 JP2019536260A5 JP2019519417A JP2019519417A JP2019536260A5 JP 2019536260 A5 JP2019536260 A5 JP 2019536260A5 JP 2019519417 A JP2019519417 A JP 2019519417A JP 2019519417 A JP2019519417 A JP 2019519417A JP 2019536260 A5 JP2019536260 A5 JP 2019536260A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- handle substrate
- epitaxial layer
- semiconductor handle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 94
- 239000013078 crystal Substances 0.000 claims 92
- 239000000758 substrate Substances 0.000 claims 86
- 238000000034 method Methods 0.000 claims 40
- 239000002019 doping agent Substances 0.000 claims 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 15
- 229910052710 silicon Inorganic materials 0.000 claims 15
- 239000010703 silicon Substances 0.000 claims 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 14
- 229910052799 carbon Inorganic materials 0.000 claims 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 8
- 230000002093 peripheral effect Effects 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 229910052787 antimony Inorganic materials 0.000 claims 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 4
- 229910052785 arsenic Inorganic materials 0.000 claims 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims 4
- 229910052796 boron Inorganic materials 0.000 claims 4
- 238000003776 cleavage reaction Methods 0.000 claims 4
- 229910052733 gallium Inorganic materials 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 4
- 229910052698 phosphorus Inorganic materials 0.000 claims 4
- 239000011574 phosphorus Substances 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 230000007017 scission Effects 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 238000000407 epitaxy Methods 0.000 claims 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020153957A JP6980071B2 (ja) | 2016-10-26 | 2020-09-14 | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
| JP2021186229A JP2022028803A (ja) | 2016-10-26 | 2021-11-16 | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662412937P | 2016-10-26 | 2016-10-26 | |
| US62/412,937 | 2016-10-26 | ||
| PCT/US2017/055722 WO2018080772A1 (en) | 2016-10-26 | 2017-10-09 | High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020153957A Division JP6980071B2 (ja) | 2016-10-26 | 2020-09-14 | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019536260A JP2019536260A (ja) | 2019-12-12 |
| JP2019536260A5 true JP2019536260A5 (enExample) | 2020-11-05 |
| JP6831911B2 JP6831911B2 (ja) | 2021-02-17 |
Family
ID=60162290
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019519417A Active JP6831911B2 (ja) | 2016-10-26 | 2017-10-09 | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
| JP2020153957A Active JP6980071B2 (ja) | 2016-10-26 | 2020-09-14 | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
| JP2021186229A Pending JP2022028803A (ja) | 2016-10-26 | 2021-11-16 | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020153957A Active JP6980071B2 (ja) | 2016-10-26 | 2020-09-14 | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
| JP2021186229A Pending JP2022028803A (ja) | 2016-10-26 | 2021-11-16 | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US10546771B2 (enExample) |
| EP (4) | EP4456146A3 (enExample) |
| JP (3) | JP6831911B2 (enExample) |
| CN (2) | CN115763496A (enExample) |
| SG (2) | SG10201913373WA (enExample) |
| TW (3) | TWI747512B (enExample) |
| WO (1) | WO2018080772A1 (enExample) |
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| JP6447439B2 (ja) * | 2015-09-28 | 2019-01-09 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| WO2017142849A1 (en) * | 2016-02-19 | 2017-08-24 | Sunedison Semiconductor Limited | Semiconductor on insulator structure comprising a buried high resistivity layer |
| JP6831911B2 (ja) * | 2016-10-26 | 2021-02-17 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
| FR3066858B1 (fr) * | 2017-05-23 | 2019-06-21 | Soitec | Procede pour minimiser une distorsion d'un signal dans un circuit radiofrequence |
| EP3432360A1 (en) * | 2017-07-17 | 2019-01-23 | Murata Manufacturing Co., Ltd. | Distributed rc termination |
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| US9768056B2 (en) | 2013-10-31 | 2017-09-19 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition |
| KR102294812B1 (ko) * | 2014-01-23 | 2021-08-31 | 글로벌웨이퍼스 씨오., 엘티디. | 고 비저항 soi 웨이퍼 및 그 제조 방법 |
| US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
| EP3221885B1 (en) | 2014-11-18 | 2019-10-23 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
| US10381260B2 (en) * | 2014-11-18 | 2019-08-13 | GlobalWafers Co., Inc. | Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers |
| US10304722B2 (en) * | 2015-06-01 | 2019-05-28 | Globalwafers Co., Ltd. | Method of manufacturing semiconductor-on-insulator |
| FR3049763B1 (fr) * | 2016-03-31 | 2018-03-16 | Soitec | Substrat semi-conducteur sur isolant pour applications rf |
| JP6831911B2 (ja) * | 2016-10-26 | 2021-02-17 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
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2017
- 2017-10-09 JP JP2019519417A patent/JP6831911B2/ja active Active
- 2017-10-09 US US15/727,723 patent/US10546771B2/en active Active
- 2017-10-09 EP EP24199429.2A patent/EP4456146A3/en active Pending
- 2017-10-09 EP EP17788038.2A patent/EP3533081B1/en active Active
- 2017-10-09 WO PCT/US2017/055722 patent/WO2018080772A1/en not_active Ceased
- 2017-10-09 SG SG10201913373WA patent/SG10201913373WA/en unknown
- 2017-10-09 CN CN202211496480.6A patent/CN115763496A/zh active Pending
- 2017-10-09 EP EP20204396.4A patent/EP3792965B1/en active Active
- 2017-10-09 EP EP22170810.0A patent/EP4057326B1/en active Active
- 2017-10-09 CN CN201780066835.9A patent/CN110178211B/zh active Active
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- 2017-10-23 TW TW109132617A patent/TWI747512B/zh active
- 2017-10-23 TW TW110138200A patent/TWI774584B/zh active
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