TW201230149A - Semiconductor device and its fabricating method - Google Patents

Abstract

Provided are a semiconductor device and its fabricating method which can grow island GaN-based semiconductor layer made of high quality semiconductor crystal on a substrate of a different kind from GaN-based semiconductor while suppressing bending of the substrate, suppressing generation of cracks, etc. although the GaN-based semiconductor layer is very thick, thereby realizing large area semiconductor device easily. The semiconductor device comprises a substrate 11 made of substances different from GaN-based semiconductor, a growth mask 12 having one or more striped opening(s) 12a and one or more island GaN-based semiconductor layer(s) 13 grown on the substrate 11 in (0001)-plane orientation using the growth mask 12. Striped opening 12a of the growth mask 12 lies in a direction pararell to <1-100> direction of the GaN-based semiconductor layer(s) 13.

Description

201230149 VI. Description of the Invention: [Technical Field] The present invention relates to a semi-conductor; &amp; n 4 body 70 and a method of manufacturing the same, and particularly to a semiconductor device using a gallium nitride (GaN) semiconductor . [Prior Art] Right, high-value, high-value-added semiconductors can be obtained on a low-profile heterogeneous substrate, and the industrial value is very high. Therefore, in order to realize this, research and development have been carried out since the past. In particular, the growth of a gallium (GaAs) semiconductor film on a substrate of Shi Xi (8)), or the growth of a semiconductor thin film on a sapphire substrate, and a relatively good semiconductor film by a so-called buffer layer technique have been put into practical use. However, since the conventional buffer layer technology has a large number of defects or penetrations on the grown semiconductor thin film, it is limited to a limited number of components such as a light-emitting diode (LED). The new technology that breaks this situation is the Seiective Area Growth (SAG) technology. For example, AUsu^ uses a well-known buffer layer technology to form a substrate on which a (3) layer is grown on a sapphire substrate as a base substrate 'on which an insulating film made of cerium oxide (Si〇2) is used as a growth mask. The cover is arranged in a stripe shape, and the GaN layer is selectively grown on a portion (window) where the insulating film is not present. Then, the GaN layer is laterally grown on the insulating film, and the penetration difference in the GaN layer is rapidly reduced (Non-Patent Literature) 1} This technique was attempted on the growth of GaAs on a Si substrate in 1982 (Non-Patent Document 2). This technique uses an insulating film to block the propagation of the transmission difference from the basal layer, since the purpose is By grading the GaN layer laterally toward the insulating film, the penetration difference is reduced sharply, and the lateral growth is emphasized, so that the multi-201230149 refers to the method as EL〇(Epitaxial Latei*al CWer^ovnh). Also in the thin AlGaN layer The selective growth of GaN on the substrate in the intermediate layer has been reported by γ Kawaguchi et al. in 1988. According to this report, substantially ELO is feasible, giving the orientation of GaN and the orientation of the substrate of the substrate. Non-patent document 3 The growth mask used in the case of growing a GaN-based semiconductor by the ELO method is generally composed of a stripe-shaped mask portion having a width of 3 to 1 μm and a stripe-like window having the same width as that of the mask portion. a GaN layer that grows from the window toward the lateral direction on the growth mask and from the adjacent window toward the lateral direction

The long GaN layer collides and merges to cover the growth mask to form an integrated GaN layer. The GaN layer thus obtained, in terms of the window region, may not be used as an active region of the element due to the growth of the difference in the penetration from the bottom surface and the fact that many of the bonded portions are caused by the lattice mismatch. A stripe-shaped active area is not formed in a limited area on the stripe. Although this method has been applied to the manufacture of semiconductor lasers with narrow stripes, it has not yet reached practical use. [Prior Art Document] [Non-Patent Document] [Non-Patent Document 1] A· Usui, H. Sunakawa, A. Sasaki, and A. Yamaguchi: Jpn. J. Appl. Phys., 36, L899 (1997) [Non Patent Document 2] BY. Ysauer et. al.: Appl. Phys. Lett., 41, 347 (1982) [Non-Patent Document 3] Y. Kawaguchi et. al., Jpn. J. Appl. Phys., 37 ( 1998) p. L966 [Summary of the Invention] 201230149 [Problems to be Solved by the Invention] Generally, since the base substrate and the semiconductor layer are different materials, the coefficients of thermal expansion are different, and when the semiconductor layer is grown and the substrate temperature is returned to room temperature, it is in the upper portion. The semiconductor layer generates compressive or tensile stress to make the substrate as a whole

Bending greatly. For example, in the case where the GaN layer is grown by the ELO method on the sapphire substrate, the substrate is convex upward. On the other hand, when the GaN layer is grown by an EL germanium method on a Si substrate or a tantalum carbide (SiC) substrate or the like, the substrate is convex downward. If the semiconductor layer becomes thick, the bending of the substrate becomes very remarkable, and in a serious case, cracks (cracks) may occur in the semiconductor layer. Moreover, the bending of the substrate, even if it does not cause cracks in the semiconductor layer, still causes significant difficulties in the lithography steps for forming the components. Further, in the prior art, the portion of the GaN layer that penetrates the insulating film having a small difference in the GaN layer is limited to a narrow region of a few μπι &amp; right, so that only a plurality of stripes of a semiconductor laser or the like can be manufactured. element. SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems of the prior art. In other words, the present invention has been made to provide a semiconductor device and a method for fabricating the same, which can suppress the bending of a substrate on a dissimilar substrate, and grow an island-shaped GaN-based semiconductor layer composed of a high-quality semiconductor crystal, and even GaN The semiconductor layer is extremely thick, and cracks and the like can be suppressed, and a semiconductor element having a large area can be easily realized. [Means for Solving the Problem] In order to solve the above problems, a semiconductor device of the present invention is characterized in that: a substrate having a substance different from a GaN-based semiconductor is directly or indirectly provided on the substrate and has - or money a stripe-shaped 201230149 opening growth mask, layered toward the (0001) plane; 'and a stripe-shaped GaN-based semiconductor long mask that is grown on the substrate using the growth mask described above - or a plurality of island-shaped GaN-based semiconductor long masks The opening extends in a direction parallel to the above (10): the direction of the conductor layer. In the 二F two-t conductor element, the 'growth mask is directly connected to the substrate of the GaN-based semiconductor, which is directly connected to the intermediate layer of the semiconductor. Examples of the substrate composed of the material f of the G-based semiconductor include a sapphire: tt or an S1 substrate, but are not limited thereto, as long as the GaN-based body layer can be (00(H) In the case of the surface azimuth growth, any substrate is acceptable. In this case, the side of the island-shaped GaN-based semiconductor layer is typically 1-1 (the α is an arbitrary integer). (1), the surface α is a center, a positive number, or a crystallographically equivalent surface or island: the side surface of the GaN-based semiconductor layer is included. · ι〇α) The surface is arbitrary,) The growth mask is formed, for example, by an insulating film such as a SiCh film or a SiN film. The growth mask is preferably a first direction parallel to the GaN-based: conductor layer and a second direction parallel to the 1-1 〇〇&gt; direction of the GaN-based half layer. The direction is periodically arranged in the Wth phase and the second cycle, and a plurality of stripe-shaped 1' extending in the second direction and a stripe-shaped opening adjacent to each other in the first direction are adjacent to each other. The end portion of the bisector line that is opposite to the stripe-shaped opening that is adjacent to each other in the second direction is an auxiliary stripe-shaped opening that is provided to overlap the predetermined distance, and may be required No auxiliary striped openings are provided. The other example of the growth mask is 201230149. The first example is periodically arranged in the first direction parallel to the &lt; ιι 〇&gt; direction of the GaN-based semiconductor layer, and is &lt; 1 parallel to the GaN-based semiconductor layer. a plurality of stripe-shaped openings extending in the second direction of the -100&gt;direction; the first direction is arranged in a period of the same period as the stripe-shaped opening, and the stripe-shaped openings are periodically arranged in a half cycle and the second direction is made The end portion of the stripe-shaped opening overlaps a predetermined distance and has a plurality of stripe-shaped openings extending in the second direction. The GaN-based semiconductor layer is suitably formed in accordance with a semiconductor element, and is generally composed of two or more layers including at least one of an n-type layer, an undoped layer, and a p-type layer. Specifically, a layer constituting the GaN-based semiconductor layer is, for example, a GaN layer, an A1GaN layer, an AlGalnN layer, an InGaN layer, or the like. When the semiconductor element has a plurality of GaN-based semiconductor layers, the distance between the island-shaped GaN-based semiconductor layers adjacent to each other is generally 30 μm or less, preferably! 〇μιη below, but not limited by this. In the semiconductor element, the number of electrodes corresponding to the type of the semiconductor element is placed at the position of the semiconductor. The conductor elements are, for example, Schottky diodes, light-emitting diodes, semiconductor lasers, photodiodes, transistors, etc., but are not limited by these. Further, the method for producing a semiconductor device of the present invention includes: a step of forming a growth mask having a plurality of stripe-shaped openings directly or indirectly on a substrate made of a substance different from the GaN-based semiconductor; and ~&lt; Using the above-mentioned substrate grown on the layer toward the (000 1) plane orientation, and making the &lt;1-100&gt; direction of the upper Ga Ν糸 semiconductor in parallel with the above-described growth mask The step of extending the direction of the stripe-shaped opening. 201230149 In the invention of the method for manufacturing a semiconductor device described above, the description relating to the invention of the above semiconductor element is established as long as it does not deviate from the property. The method of manufacturing the semiconductor device further includes: after the GaN-based semiconductor layer is grown on the substrate, the second support substrate is attached to the upper surface side of the GaN-based semiconductor layer, and the first support substrate and the GaN-based semiconductor layer are The step of peeling off the substrate; and further, the step of forming the first support substrate and the GaN-based semiconductor layer from the substrate, and forming a plurality of electrodes on the surface on which the GaN-based semiconductor layer is exposed. In the method of manufacturing the semiconductor device, the GaN-based semiconductor layer is grown on the substrate, and the first support substrate is placed on the upper surface of the GaN-based semiconductor layer before the first support substrate is placed on the upper surface of the GaN-based semiconductor layer. The step of forming one or more electrodes, or the step of growing at least a portion of the mask, preferably substantially all, preferably all, or two steps. Further, it is necessary to form a conductor film or a conductor line on the main surface of the first support substrate on the side of the GaN-based semiconductor layer. In the method of manufacturing the semiconductor device, the first support substrate and the GaN-based semiconductor layer are peeled off from the substrate, and then the second support substrate is placed on the surface side on which the GaN-based semiconductor layer is exposed. The first support substrate and the second support substrate are made of an elemental semiconductor, a compound semiconductor, a metal, an alloy, a nitride-based ceramic, an oxide ceramic, diamond, carbon, plastic, or the like, and may be composed of such materials. The single layer construction can also be a multilayer construction. The adhesion between the second support substrate and the second support substrate can be selected by using a metal or an organic adhesive such as solder paste or the like as needed. 201230149 Further, the method for producing a semiconductor device according to the present invention is characterized in that the step of forming a growth mask having a plurality of stripe-shaped openings directly or indirectly on a substrate made of a substance different from the GaN-based semiconductor is used in the above growth. The mask has a plurality of island-shaped GaN-based semiconductor layers oriented on the substrate in a (〇〇〇1) plane orientation, and the &lt;1-100&gt; direction of the GaN-based semiconductor mill is parallel to the growth mask described above a step of extending the growth direction of the stripe-shaped opening; forming one or a plurality of first electrodes on the upper surface of the GaN-based semiconductor layer; and removing at least a part of the growth mask after forming the first electrode; After removing at least a part of the growth mask, the above-mentioned (four)-type semiconductor layer is formed in the above-mentioned first! a step of adhering the first support substrate via the organic via layer to the upper surface side of the electrode; a step of separating the first support substrate and the GaN-based semiconductor layer from the substrate; and a first support substrate of the substrate The above is called the step of removing the GaN-based conductors, and the plurality of second electrodes; and the surface of the layer is formed with a word or the first electrode and the second portion; the U J · conductor layer is The above (10) of the second...the second half 1 supports the step of peeling off the substrate. Typically, 'the whole part is formed, and the most "takes a long mask." It is easy to remove the first branch. -10- 201230149

The GaN-based semiconductor layer is peeled off from the substrate. The organic underlayer may be formed on one main surface of the first support substrate, or may be formed on the upper surface side of the first electrode on which the GaN-based semiconductor layer is formed. Typically, after attaching the second supporting substrate to the second electrode side, the GaN-based semiconductor layer forming the first electrode and the second electrode is peeled off from the first supporting substrate. The first support substrate is composed of an elemental semiconductor compound semiconductor, a metal, an alloy, a nitride-based ceramic, an oxide-based ceramic, diamond, carbon, plastic, or the like, and may have a single layer structure composed of such a material or a plurality of layers. structure. In the case of the second support substrate, a dicing tape or an extension tape is typically used, but it is not limited thereto. Further, if necessary, the step of forming a metal layer on the entire surface including the second electrode before the GaN-based semiconductor layer forming the second electrode and the second electrode is formed from the first support substrate is formed. This metal layer can be used as a pad electrode. Further, if necessary, after the metal layer is formed, a groove is formed in the metal layer for each of the plurality of GaN-based semiconductor layers before the 〇-based semiconductor layer on which the first electrode and the second electrode are formed are separated from the first support substrate. The steps. Other descriptions relating to the above-described semiconductor element and method for manufacturing a semiconductor element are established as long as they do not violate the nature. Further, the method for producing a semiconductor device of the present invention is characterized in that it has a step of forming a growth mask having a plurality of stripe-shaped openings directly or indirectly on a substrate made of a substance different from a GaN-based semiconductor; The mask has a plurality of island-shaped GaN-based semiconductor layers facing the (0001) plane on the substrate, and the &lt;1 100&gt; direction of the GaN-based semiconductor-11 - 201230149 layer is parallel to the growth mask a step of extending the growth direction of the stripe-shaped opening; forming a plurality of ith electrodes on the upper surface of the GaN-based semiconductor layer; and removing at least a portion of the growth mask after forming the first electrode; After removing at least a part of the growth mask, the GaN-based I conductor layer forming the first electrode is peeled off from the substrate; and after the GaN-based semiconductor layer forming the first electrode is peeled off from the substrate, The first electrode side of the (four)-type semiconductor layer on which the ith electrode is formed is formed on the first surface of one main surface of the first support substrate a step of pressing the next layer of the device; forming a sidewall spacer formed of an insulator on a side surface of the GaN-based semiconductor layer; and forming the GaN-based semiconductor layer having the sidewall spacer on the side surface by vacuum adsorption from the above After the second support layer is formed on the first main surface of the second support substrate, a plurality of the GaN-based semiconductor layers are next to each other with the sidewall spacers interposed therebetween; a step of forming one or a plurality of second electrodes on a surface of the plurality of second organic-based adhesion layers on the second support substrate, and forming a plurality of second electrodes; and forming the ith electrode and the second electrode The step of peeling off the GaN-based semiconductor layer of the electrode from the second support substrate. -12- 201230149 Typically, after forming the second electrode, substantially all of the growth mask is removed, preferably all, and the GaN-based semiconductor layer on which the second electrode is formed is easily peeled off from the substrate. The method of peeling the GaN-based semiconductor layer in which the first electrode is formed from the substrate is not particularly limited. For example, the first electrode side of the GaN-based semiconductor layer in which the first electrode is formed is adsorbed by force, and the force is applied in a direction separating from the substrate. Peel off. The second support substrate and the second support substrate are made of an elemental semiconductor, a compound semiconductor, a metal, an alloy, a nitride ceramic, an oxide ceramic, diamond, carbon, or plastic, and may be a single material. The layer structure can also be a multilayer structure. Further, if necessary, the step of forming a metal layer on the entire surface including the second electrode before the GaN-based semiconductor layer on which the first electrode and the second electrode are formed is peeled off from the second support substrate is formed. This metal layer can be used as a pad electrode. Further, if necessary, after forming the metal layer, the GaN-based semiconductor layer forming the second electrode and the second electrode is formed in the metal layer for each of the plurality of GaN-based semiconductor layers before being peeled off from the second support substrate. The step of the ditch. Furthermore, after the groove is formed in the metal layer, the surface of the metal layer side may be attached to the dicing tape or the extension tape, and the dicing tape or the extension tape may be extended after the second support substrate is peeled off, thereby increasing A GaN-based semiconductor layer in which the first electrode and the second electrode are formed is interposed between the GaN-based semiconductor layers. Other explanations relating to the invention of the above-described semiconductor element and semiconductor element manufacturing method are established as long as they do not violate the nature. [Effect of the Invention] According to the present invention, the stripe-shaped opening of the growth mask is grown and covered 201230149

The lateral direction of the cover &gt; A food &lt; The island-shaped GaN-based semiconductor layer has extremely high crystallinity, and a GaN-based semiconductor layer composed of a high-quality i, a &lt; gate α σ-type + conductor crystal can be obtained. 1 * When a plurality of island-shaped QaN-based semiconductor layers are grown, the states in which the systems are separated from each other are formed in isolation, and the tensile stress or compressive stress generated in each GaN-based semiconductor layer is limited to the The influence of these tensile stresses or compressive stresses in the conductor layer is less than that of the GaN-based semiconductor layer. Further, since the growth mask and the GaN-based semiconductor layer are not chemically bonded, the stress in the GaN-based semiconductor layer can be alleviated by the sliding caused by the interface between the growth mask and the GaN-based semiconductor layer, and the island-shaped GaN system There is a gap between the semiconductor layers, and the entire substrate in which a plurality of island-shaped GaN-based semiconductor layers are grown is soft and can be easily deformed and deflected when applied by an external force. Therefore, even if the substrate is slightly warped, bent, deformed, or the like, it can be easily corrected with a small external force, and the substrate can be easily transported by a vacuum chuck to carry out the process of the semiconductor element. According to the above, the curvature of the substrate can be suppressed, and the island-shaped GaN-based semiconductor layer composed of the high-quality semiconductor crystal can be grown, and even if the GaN-based semiconductor layer is extremely thick, the occurrence of cracks or the like can be suppressed, and a large area can be easily realized. Semiconductor component. Further, a semiconductor element in which an electrode is formed on both surfaces of a GaN-based semiconductor layer can be easily produced. [Embodiment] [Embodiment of the Invention] Hereinafter, a mode for carrying out the invention (hereinafter referred to as an embodiment) will be described. [First Embodiment] -14 - 201230149 A GaN-based semiconductor device according to the first embodiment and a method of manufacturing the same will be described. In the first embodiment, as shown in Fig. 1A, first, an opening (hereinafter referred to as a stripe window) 12a having a plurality of stripe shapes is formed on the base substrate 11. A, a growth mask 12 of a plurality of auxiliary stripe-shaped openings (hereinafter referred to as auxiliary stripe windows) to be described later is added. In the base substrate 11, a substrate made of a material different from the GaN-based semiconductor can be grown, for example, on a c-plane sapphire substrate or a (in) plane orientation, for example, a GaN layer or the like in a (0001) plane orientation. As the GaN-based semiconductor layer, a C-plane sapphire substrate as it is can be used. in. The thickness of the GaN-based semiconductor layer such as a GaN layer grown on a surface sapphire substrate or a (111) plane-oriented Si substrate is, for example, i 2 μm, but is not limited thereto. The growth mask 12 is formed, for example, on the base substrate u by, for example, a plasma chemical vapor deposition (CVD) method, for example, after forming a Si 2 film, by photolithography and etching using a prescribed mask. The Si〇2 film is patterned to form. The thickness of the far Si 2 film is, for example, 〇 3 μm, but is not limited thereto. The shape and arrangement of the stripe window i 2a and the auxiliary stripe window of the growth mask 1 2 will be described later. Next, as shown in Fig. 1B, the GaN-based semiconductor layer 13 is grown in an island shape in a (0001) plane by a vapor deposition method such as metal organic chemical vapor deposition (M〇CVD) using a growth mask 12. In this case, first, the GaN-based semiconductor is selectively grown on the surface of the base substrate 21 on which the stripe window 12a is exposed, and the GaN-based semiconductor layer 13 is grown on the growth mask 12 by continuing to grow laterally on the growth mask 12. During this growth period, the island-shaped GaN-based semiconductor layer 13 stops growing until it collides with the adjacent island-shaped GaN-based semiconductor layer -15-201230149. Can be marinated

It is necessary to determine that an island-shaped GaN-based semiconductor layer 13 grows from a few fluffy % Ύ and 1 ^ 12a. Although FIG. 1B illustrates a case where an island-shaped GaN-based semiconductor layer 13 is grown from one stripe window 12a, it is also possible to make an island-rich GaN-based semiconductor layer 13 from two or more stripe windows. 12a grows. QαΧΤ &lt; , ^ The QaN-based semiconductor layer 13 is composed of two or more layers including at least one of an n-type layer, an undoped layer, and a Ρ-type layer in accordance with the GaN-based semiconductor element to be manufactured. It is necessary to process the island-shaped GaN-based semiconductor layers 13 thus grown on the growth mask 12, and to form necessary electrodes (not shown). Then, the base substrate i i having the above-described element-formed structure is wafer-formed for the purpose of, for example, a wafer-containing GaN-based semiconductor layer 13 as a GaN-based semiconductor element. The growth cover 12 will be described in detail. Two examples of the growth mask 12 are shown in Figs. 2 and 3. The growth mask 12 shown in FIG. 2 has a working direction in the direction of the GaN-based semiconductor layer parallel to the (〇〇〇ι) plane direction and a second direction parallel to the direction of the GaN-based semiconductor layer. The plurality of stripe windows 12a are periodically arranged in the second direction by the periods P1 and Pa, respectively. The growth mask 12 further has a bisector on a region between the stripe windows 12a adjacent to each other in the i-th direction, and a pair of stripe windows 12a adjacent to each other in the second direction. The auxiliary end strips 1 2b which are disposed only in the same manner as the length q are used to prevent the ridges of the GaN-based semiconductor layer 3 in the Μ-100> direction from being raised as will be described later. The stripe window 12a has a length a, 201230149 has a width b', and the auxiliary stripe window 12b has a length c and a width d. The portion other than the stripe window 12a and the auxiliary stripe window 12b in the growth mask 12 is the mask portion 1 2 c. The length a of the stripe window 1 2 a is, for example, 2 0 〇 2 2 〇〇〇 μ m, the wide yield 匕 is, for example, 2 to 2 0 μηι, and the period p of the stripe window 12 2a is, for example, 6 to i 2 〇, period P2 For example, 505~1 050μηι, the length c of the auxiliary stripe window i2b is approximate ((Pa-ahCprb-cO + tanSO.)), for example, α = 800μηι, b = 5pm, ί! = 5μπι, and ρ2 = 810μιη is 80 〜90μπι. The width d is, for example, the same as the width b. The width of the mask portion 12c is, for example, pi_b, and thus is 5〇μηι 'the auxiliary stripe window 12b and the stripe window i2a are mutually different in length q because it is (Pi_b-d) + Tan30o + 2 ' is 35 to 40 μm in the above setting. 0 The growth mask 12 shown in Fig. 3 has the &lt;11-20&gt; direction of the GaN-based semiconductor layer 13 parallel to the (〇〇〇1) plane orientation. The first direction is a plurality of stripe window 丨 2a extending in the second direction parallel to the &lt; 1 -100&gt; The cover 12 further has a ridge in the first direction in order to prevent the GaN-based semiconductor layer 13 from rising at both ends of the <1 - 10 0 &gt; The stripe window 12a has the same period Pi, and the stripe window 12a is periodically arranged in a half-period P1/2. The stripe window 12a in the second direction overlaps the end portion of the stripe window 12a in the second direction by a plurality of stripe windows extending in the second direction. 12a. The length a of the stripe window 12a is, for example, 200 to 2000 μm, the width b is, for example, 2 to 20 μm, and the period ρ 1 of the stripe window 12 2 a is, for example, 6 to 1 2 〇μηι, and the width of the mask portion 1 2c is, for example, When prb' is, for example, P丨=55 μm, and b= is 50 μm. The length r at which the end portions of the stripe window 12a overlap each other is (Pi-bd) + tan30° + 2 ', for example, ρι = 55μηι, b = 5 pm, d = 5 pm, -17 - 201230149 is 3 5 to 40 μm. When the GaN-based semiconductor layer 13 is grown by using the growth mask 1 2 shown in Fig. 2 or Fig. 3, the effect can be obtained. The "000 1" plane growth of the GaN-based semiconductor will be described in detail later, and the lateral growth rate in the direction parallel to the plane is &lt;11 _2〇&gt; the direction is the largest, and the &lt;1-100&gt; direction is the smallest. Or in the growth mask 12 shown in Fig. 3, because the longitudinal direction of the stripe window 12a is the &lt;1 -1 〇〇&gt; direction, Both ends of the stripe window 12a have a small growth rate of the GaN-based semiconductor, and the island-shaped GaN-based semiconductor layers 13 opposed to each other in the &lt;ii〇〇&gt; direction are not aligned with each other, and the island-shaped GaN-based semiconductor layers 13 can be mutually connected. Separation. At this time, the size of the island-shaped GaN-based semiconductor layer 13 in the &lt;1-1〇〇&gt; direction is substantially equal to the length a of the stripe window 12a. On the other hand, since the lateral growth rate from the stripe window 12a toward the &lt;11-20&gt; direction is very large, it is necessary to make the island of the &lt;η_2〇&gt;

The GaN-based semiconductor layers 3 do not conform to each other. Therefore, the first method is to design the interval between the stripe window 12a and the stripe window 12a in the &lt;11-20&gt; direction, that is, the width (pi b) of the mask portion i2c in the &lt;11-20&gt; direction. Up

The width of the GaN-based semiconductor layer 13 in the &lt;112〇&gt; direction is also large. In this method, the side surface in the direction orthogonal to the &lt;11-20&gt; direction of the GaN-based semiconductor layer 13 is a (1 L20) plane or an inclined (11_2p) plane (β is an arbitrary integer). In the second method, as shown in FIG. 4, the growth mask is formed on the growth mask 1 2 at the inner side of the both ends of the GaN-based semiconductor layer 13 in the &lt;1 1-20&gt; direction. The smallest &lt;1-100&gt; direction of the equilateral direction of the zigzag-shaped stripe window 12a. Thereby, the lateral growth rate of the GaN-based -18-201230149 semiconductor layer 13 in the &lt;1 1-20&gt; direction can be greatly reduced, and the island-shaped GaN-based semiconductor layers 13 in the &lt;11-20&gt; direction can be prevented from being combined with each other. In this method, the side faces ' of the both ends of the GaN-based semiconductor layer 13 in the <11-20> direction are Z-shaped (1-100) planes or inclined (1-1 0α) planes (α is Ren Si's integer). In the third method, as shown in FIG. 5, the stripe window 12a is formed on the growth mask 丄2 of the portion on the inner side of the both ends of the GaN-based semiconductor layer 13 in the &lt;1 1-20&gt; direction. The stripe window 12a has a stepped shape in which the straight portions of the &lt;1-1〇〇&gt; direction parallel to the growth rate and the straight line portion parallel to the &lt;11-20&gt; direction are parallel to each other on both sides of the mask portion 12c The side. In this case, when the GaN-based semiconductor layer 13 is grown, as shown in FIG. 6, the sides of the mask portion 1 2 c of the stripe window 1 2 a are parallel to the direction of &lt; 1 -1 〇〇&gt; In the straight portion, the GaN-based semiconductor layer 13 continues to grow in the &lt;11-20&gt; direction, but cannot be in a straight line parallel to the &lt;1-100&gt; direction and a line parallel to the &lt;1 1-20&gt; The result of the (1-1 〇α) plane (α is an arbitrary integer) in which the growth angle of the gradation of the GaN-based semiconductor layer 13 is increased in the direction of the 交叉-direction of the GaN-based semiconductor layer 13 The side faces at both ends are Z-shaped (1-100) faces. In Fig. 5, the concavities and convexities of the sides of the stripe window 12a on both sides of the mask portion i2c are shifted by half a period in the direction, but the amount of the offset is not particularly limited. For example, it may be in &lt; The 1-1〇〇&gt; directions are shifted by one cycle. In the third method, a' is shown in Fig. 7 in the growth mask 12, and the direction of the stripe window 12a extending in the &lt;1-100&gt; direction. The ruts are equally spaced and separated from each other to form a plurality of sides parallel to the &lt;1-1〇〇&gt; direction and sides parallel to the &lt;11-20&gt; direction:: 19- 201230149 square or A rectangular dot-shaped opening (hereinafter referred to as a dot window) 12 d. In the present case, when the GaN-based semiconductor layer 13 is grown, the growth of the GaN-based semiconductor layer 13 is hindered at the position of the point window i 2d, and as a result, the growth retardation (l-ΙΟα) plane (α) Is an arbitrary integer). However, 'in the island-shaped GaN-based semiconductor layer 13 surrounded by the surface including the surface having a small growth rate, the distance between the GaN-based semiconductor layer 13 and the GaN-based semiconductor layer 13 where the surfaces having a small growth rate face each other When it is large, the following problems will occur. In other words, in the mask portion 1 2c of the growth mask 12 in the region between the GaN-based semiconductor layer i 3 and the GaN-based semiconductor layer 13, since the source gas is not consumed there, the gas concentration rises. A concentration gradient occurs in the direction in which the GaN-based semiconductor layer 丨3 and the GaN-based semiconductor layer 13 are connected, and is diffused by the concentration gradient, and a large amount of material gas is supplied to the edge portion of the semiconductor layer 13. As a result, the thickness of the edge portion of the GaN-based semiconductor layer 3 is larger than that of the other portions, and it has a raised shape. More specifically, the mask portion l2c of the growth mask 12 in the region between the GaN-based semiconductor layer 13 and the GaN-based semiconductor layer 13 having the smallest growth rate in the &lt;1-100&gt; direction is due to the material gas: This portion is not consumed, the gas concentration is increased, and the 'think gradient' is diffused in the <1-100> direction due to the concentration gradient, and the edge portion of the 1 100&gt; direction of the GaN-based semiconductor germanium is supplied with more raw materials. gas. As a result, the thickness of the edge portion of the core direction of the GaN-based semiconductor layer (10) is larger than that of the other portions, and it has a raised shape. The specific ridges of the edge portion of the bismuth-based semiconductor layer 13 not only cause structural defects in the semiconductor structure, but also cause an obstacle in the process after photolithography or the like. -20- 201230149 To prevent island-like damage due to the specific bulging of the above edge parts

GaN-based semiconductor layer! The thickness unevenness of 3 must be such that the semiconductor layer and the GaN-based semiconductor layer 13 are in close proximity to each other. In the initial stage of growth, no in-plane unevenness of the material gas is generated. For this reason, in the growth mask 12 shown in Fig. 2, in the &lt;ιι_2〇&gt; direction adjacent to one another, the bisector of the region between the stripe windows 12a, and the &lt;11〇〇 &gt; The opposite end portions of the stripe window i 2a adjacent to each other in the direction are overlapped by the length q, respectively, in other words, the auxiliary stripe window is formed at the center portion of the region where the four end portions of the four stripe windows 12a are close to each other. 2b, by island

The GaN-based semiconductor layer 13 can also consume the material gas guided by the growth of the auxiliary stripe window i 2b to obtain in-plane uniformity of gas concentration. Further, in the growth mask 12 shown in Fig. 3, the stripe window 123 is arranged in the &lt;112〇&gt; direction by a half period P i /2, and the stripe of the &lt; 丨 _ i 〇〇 &gt; The end portions of the window 12a overlap each other only by the length r, in other words, the stripe windows i2a arranged in the &lt;11-20&gt; direction by the half period Pi/2 are overlapped with each other only in the &lt;1-100&gt; direction. The in-plane uniformity of the gas concentration is obtained. The GaN-based semiconductor layer 13 which was grown into an island shape by the MOCVD method using the growth mask 12 shown in Fig. 2 is shown in Fig. 8 as a scanning electron microscope image (SEM image) of the surface of the 〇aN layer. However, as the base substrate U', a GaN layer having a thickness of 2 μm is grown on the C-plane sapphire substrate, and the growth mask 12 is formed by the Si〇2 film which is formed by the thickness (1), and the length a of the stripe window l2a is 800 μm. The width b is 5 μm, and the period P1 of the stripe window 12a is 55 μm, period? 2 is 810 μm, the width of the mask portion 12c is 5 〇μϊη, the length c of the auxiliary stripe window 12b is 80 μm, the width d is 5 μm, &lt;1-1〇〇&gt; square-21 · 201230149 is the stripe window 12a and The interval between the stripe windows 12a is 1 μm, and the length 9 at which the end portions of the stripe window i2a and the auxiliary stripe window 12b overlap each other is 35 μm. The length of the auxiliary stripe window 12b is c 〇 [xm, and the width of the mask portion 12c is 50 μm divided by tan 30. Asked for. The thickness of the GaN layer grown into an island shape is 5 μm. The growth of the GaN layer is performed at a temperature of 丨1 〇〇 β (:, pressure of 3 〇 kpa. When the GaN layer is grown, trimethylgallium (TMG) and ammonia (Nh3) are used as source gases, and hydrogen is used ( HQ and nitrogen (NO is used as a carrier gas. As shown in FIG. 8 , the GaN-based semiconductor layer 13 is formed into a hexagonal island shape of t length around the stripe window i2a, and the GaN-based semiconductor layer 13 is provided with each auxiliary stripe window 12b. The GaN-based semiconductor layer 13 having an elongated hexagonal shape is suppressed in the edge portion of the &lt;11〇〇&gt; direction. The arrow symbol in Fig. 8 indicates the direction. The growth mask 12 of the auxiliary stripe window 12b is not provided, and the SEM image of the surface of the island-shaped GaN-based semiconductor layer 13 is shown in Fig. 9. The elongated hexagonal island-shaped GaN-based semiconductor layer 丨3 &lt;Kl00&gt; The edge portions of both ends of the direction are raised. When one side surface of the lanthanide semiconductor layer i 3 is formed by the surface in the direction orthogonal to the direction, the side surface is stopped as it is, and the adjacent GaN system is The edge of the GaN-based semiconductor layer 13 in the direction of the semiconductor layer 13 is in the There is an obstacle in the photolithography step. It is necessary to reduce the adjacent GaN-based semiconductor layer as much as possible. The interval between the two is less than 20 μm, preferably less than 1 μmη. It is for humans, for GaN-based semiconductors ( 0001) In the face growth, the lateral growth rate in the direction of the flat-to-four faces is the smallest in the direction of the <u_20&gt; direction ^-22- 201230149 &lt; 1 -100&gt; The minimum direction is used as the base substrate. A GaN layer having a thickness of 2 μm was grown by a MOCVD method on a surface sapphire substrate. Next, a SiO 2 film having a thickness of 0.3 μm was formed on the base substrate by a plasma CVD method. Next, as shown in FIG. 10, photolithography was performed. And the etching method is to form a stripe window i2a having a length of 800 μm and a width of 20 μm in a fan shape at an angle of ι. The horizontal axis direction of Fig. 1 is an angle 〇. The angle 〇 is oriented in the longitudinal direction of the stripe window 12a. The direction of the direction of the &lt;11-20&gt; is also the direction in which the GaN grows from the stripe window 12a in the &lt;1-100&gt; direction. The fan-shaped stripe window 12a thus formed on the base substrate is introduced into the MOCVD apparatus. MOCVD method makes Ga The N layer was selected and grown from the stripe window i2a, and the lateral growth amount (length) of the GaN layer on the growth mask 12 was measured. The growth of the GaN layer was performed at a temperature of 1100 ° C and a pressure of 30 kP a. Using TMG and NH3 as raw material gases, I and N2 were used as carrier gases. The results are shown in Fig. 11. The horizontal axis of Fig. 11 indicates the longitudinal direction of the stripe window 12a and the angle GaN&lt;ll-20&gt; The axis represents the amount of lateral growth on the growth mask 12. As shown in Fig. 11, the angle formed in the longitudinal direction of the stripe window 1 2 a and the &lt;11-20&gt; direction is 3 〇. And 90. In other words, in the case where the longitudinal direction of the stripe window 12a is the &lt;1-100&gt; direction, the lateral growth amount of the GaN layer on the growth mask 12 of the &lt;1 1-20&gt; direction is about 14 μm. Oppositely, the angle formed by the longitudinal direction of the stripe window i 2a and the &lt; 1 1 -2 〇&gt; direction is 〇 ° and 60. In other words, in the case where the longitudinal direction of the stripe window 1 2 a is the &lt;n-2〇&gt; direction, the lateral growth amount on the growth mask 12 in the &lt;1-1〇〇&gt; direction is about extremely small. 3μπι. Therefore, it can be said that the GaN layer does not substantially grow in the &lt;1-1〇〇&gt; direction. In addition, the &lt;1-1〇〇&gt; direction -23- 201230149

The side of the GaN layer has a tendency to be inclined and is a (1_1 〇 α) plane, and α is between _2 and 2 ' α = 〇 is a vertical plane. Therefore, when the island-shaped GaN-based semiconductor layer is grown, the (1 - 1 〇〇) plane can be used for the division. According to the first embodiment, the GaN-based semiconductor layer 13 which is grown on the growth mask yoke 2 from the plurality of stripe windows 12a of the growth mask 2 is extremely excellent in gentleman's b. In addition, since a plurality of island-shaped GaN-based semiconductor layers i 3 are formed in a state of being separated from each other, the tensile stress or compressive stress generated in each GaN-based semiconductor layer 13 is limited to the growth time and the room temperature. In the GaN-based semiconductor layer 13, the other (the ja-based semiconductor layer 13 is not affected by such tensile stress or compressive stress. Further, since the growth mask 12 and the GaN-based semiconductor layer 13 do not form a chemical bond, the GaN system The stress in the semiconductor layer 13 can be alleviated by the sliding caused by the interface between the growth mask 12 and the GaN-based semiconductor layer 13. Further, since the island-shaped GaN-based semiconductor layer 13 has a gap therebetween, the GaN-based semiconductor is grown. The base substrate 1 1 of the layer 13 has flexibility as a whole. When the external force is applied, it can be easily deformed and flexed. Therefore, even if the base substrate 11 is slightly curved, curved, and opened, it is still small. In the external force, the base substrate 11 or the like can be transported by a vacuum chuck, and the process of the GaN-based semiconductor element can be easily performed. Thereby, the bending of the base substrate 丨丨 can be suppressed, and the high-quality semiconductor can be crystallized. The island-shaped GaN-based semiconductor layer 13 is grown, and even if the GaN-based semiconductor layer 13 is extremely thick, the occurrence of cracks or the like can be suppressed, and a large-area GaN-based semiconductor device can be easily realized. [Second embodiment] The GaN-based Schottky diode of the second embodiment and the method of manufacturing the same are described in Japanese Patent Application No. 201230149. First, as in the first embodiment, as shown in FIG. 2, a growth mask 22 is formed on the base substrate 21. As the base substrate 21, a GaN layer having a thickness of 2 μϊ is grown on a C-plane sapphire substrate. The growth mask 22 has a stripe window 22a and an auxiliary stripe window as in the growth mask 12 shown in Fig. 2 (not shown). The stripe window 22a' of the growth mask 22 of the portion on the inner side of the both ends of the GaN-based semiconductor layer in the design of the &lt;1 1_2〇&gt; direction has a &lt;〗 〇()&gt; The z-shape of the side in the direction of the equivalent direction. For example, the 'growth mask 22 is formed by a SiO 2 film having a thickness of 0.3 μm. The length a of the stripe window 22a is 8 μm and the width b is 5 μm. The period of the stripe window 22a is ρ^55μπι, and the period ?2 is 81 (^111, the mask portion The width of the auxiliary stripe window is 8 μm, the width d is 5 μm, and the spacing between the stripe window 22 & and the stripe window 22a is 5 μm, the end portion of the stripe window 22a and the auxiliary stripe The length q of the window 22b coincident with each other is 3 5 μη. Next, as shown in FIG. 12A, the growth mask 22 is used to dope the 11+ type as the type 11 impurity by the MOCVD method (3 is in the layer 2 3 (0 001) The surface orientation grows in an island shape. The thickness of the n + -type GaN layer 23 is, for example, 8 μπι ', and the impurity concentration is, for example, 5 × 10 018 cn T3. The interval between the n + -type GaN layer 23 and the n + -type GaN layer 23 is, for example, approximately ιομπ!. The growth of the η + -type GaN layer 23 is carried out, for example, at a temperature of i 100 ° C and a pressure of 30 kPa. When the n+ plastic GaN layer 23 is grown, for example, TMG and NH3 are used as a material gas, and I and N2 are used as a carrier gas, and nitrogen-diluted decane (SiH4) is used as an n-type dopant. In this case, an island-shaped n + -type GaN layer 23 grows from the five-striped window 22a. Further, these five stripe windows 22a have two stripe windows 12a on both sides of the &lt;1 1-20&gt; direction in -25-201230149. The z-shaped shape as shown in Fig. 4 serves as the n+ type. The GaN layer 23 stops the task of lateral growth in the &lt;11-20&gt; direction. Next, in order to promote the growth in the vertical direction and increase the growth pressure to, for example, 80 kPa, the crystal growth conditions are adjusted, and the n-type GaN layer 24 is grown on the n + -type GaN layer 23 by the m〇CVD method. The thickness of the n-type GaN layer 24 is, for example, 5 μm, and the impurity concentration is, for example, 1 x i 〇 16 cm-3. The interval of the &lt;1 1 - 2 〇 &gt; direction of the entire n + -type GaN layer 23 and the n-type GaN layer 24 after the n-type GaN layer 24 is grown is, for example, about 5 μm. As shown in FIG. 1 2B, the n + -type GaN layer 23 and the n-type GaN layer 24 are formed in a portion where the upper portion of the stripe window 22a and the n + -type GaN layer 23 laterally grown from the adjacent stripe window 22a meet each other. There is a penetration difference of 25. Next, as shown in FIG. 13A, for example, an insulating film is formed entirely by a plasma CVD method, for example, a SiO 2 film 26 having a thickness of Ιμπι is formed, and then the SiO 2 film 26 is patterned into a predetermined shape by photolithography and etching. The n-type GaN layer 24 is partially exposed. Next, the Si〇2 film 26 thus patterned into a predetermined shape is used as a mask, and the n-type GaN layer 24 is subjected to inductively coupled plasma (ICP)-reactive ion etching (RIE) using, for example, a gas-based etching gas. The etching is removed to expose the n + -type GaN layer 23 . Next, as shown in FIG. 13B, for example, after the ohmic metal film is completely formed by the vacuum evaporation bonding method, the ohmic metal film is patterned into a predetermined shape by photolithography and etching, and the exposed n + type is formed. An ohmic electrode 27 is formed on the GaN layer 23. Thereafter, RTA (Rapid Thermal Annealing) of, for example, 800 ° C for 30 seconds is performed to bring the ohmic electrode 27 and the n + -type GaN layer 23 into ohmic contact. As the ohmic metal film, for example, a multilayer film -26-201230149 in which titanium (Ti)/aluminum (A1)/titanium (Ti)/gold (Au) is sequentially used is set as follows: The Ti film of one layer was l〇nm, the A1 film was 300 nm, the Ti film of the third layer was 3 〇 nm, and the Au film was 500 nm. Next, the Si〇2 film 26 is patterned into a predetermined shape by photolithography and etching, and the n-type GaN layer 24 of the portion other than the diffusion row 25 is partially exposed. Then, a resist pattern (not shown) formed by photolithography is maintained in a state of remaining as it is, for example, by a vacuum deposition method, and a metal film for forming a Schottky electrode is formed. Thereafter, the resist pattern is removed (without separation) together with the metal film for forming the Schottky electrode formed thereon. Thus, the Schottky electrode 28 is formed in a state of being in contact with the n-type GaN layer 24. As the metal film for forming the Schottky electrode, for example, a two-layer film of nickel (U) or gold (Au) is used. The thickness of each film is, for example, 5 nm for the Ni film and 100 nm for the Au film. The Schottky electrode 28 is prevented from directly contacting the penetrating row 25 by the 〇2 film 26, so that the current leakage along the penetrating row 25 can be prevented. Secondly, as shown in FIG. 14, on the ohmic electrode 27 A pad electrode 29 made of Au is formed, and a neodymium electrode 30 made of AU is formed on the Schottky electrode 28. Then, the base substrate 2 having the diode structure as described above is wafer-formed, for example, in which one wafer includes an island-shaped n + -type GaN layer 23 and an n-type GaN layer 24, and the GaN-based Schottky diode of the purpose is manufactured. . According to the second embodiment, the GaN-based Schottky diode can obtain the same advantages as those of the first embodiment. [Third Embodiment] A GaN-based Schottky diode of the third embodiment and a method of manufacturing the same will be described. -27-201230149 First, as in the first embodiment, as shown in Fig. 5A, a growth mask 32 is formed on the base substrate 31. As the base substrate 31, a GaN layer having a thickness of 2 μm is grown on a C-plane sapphire substrate. Similarly to the growth mask 12, the growth mask 32 has a stripe window 32a and an auxiliary stripe window (not shown). For example, the growth mask 32 is formed by a Si〇2 film having a thickness of 〇邛111. The length a of the stripe window 32a is ι〇〇〇μηη, the width b is ΙΟμπι, and the period of the stripe window 32a is ρΑ9〇μηη, period? 2 is 1〇1 (^111, the width of the mask portion is 80 μm, the length of the auxiliary stripe window (: 12〇μιη, width d is ΙΟμπι, <丨-丨(9)> direction of the stripe window 32M〇 stripe window 32& The interval is ΙΟμηι, and the length q at which the end portion of the stripe window 32a and the auxiliary stripe window 32b overlap each other is 55 μm. The η+-type GaN layer 33 doped with Si as an n-type impurity is grown by the MOCVD method using the growth mask 32. The (0001) plane orientation is grown in an island shape. The thickness of the n + -type GaN layer 33 is, for example, 10 μm, and the impurity concentration is, for example, 5×10 18 cm·3. The interval between the n + -type GaN layer 33 and the n + -type 33 is, for example, about ΙΟμηι. The growth of the η + -type GaN layer 33 is performed, for example, at a temperature of 丨i 〇〇 t &gt; c and a pressure of 30 kPa. When the GaN layer 33 is grown, for example, TMG and NH 3 are used as source gases, and as a carrier gas, 'Sit diluted with nitrogen is used as the n-type dopant. In this case, an island-shaped n + -type GaN layer 33 is grown from one stripe window 32a. Secondly, the crystal growth condition is adjusted and promoted in order to promote the growth in the longitudinal direction. The MOCVD method grows an 11-type layer M on the n + -type GaN layer 33. The thickness of the 11-type GaN layer 34 is, for example, 5 μm, and the impurity concentration is, for example, 1×1016cnT3. The n+ type germanium after the n-type GaN layer 34 is grown is separated by a layer 33, for example, about the entire n-type GaN layer 34. 11-20&gt; between directions -28 - 201230149 5μπι ° in the n + -type GaN layer 33 and the n-type GaN layer 34, a gap is formed in the upper portion of the stripe window 32a, the illustration is omitted. The insulating film is formed entirely by the plasma CVD method to form, for example, a "(1) film having a thickness of 丨^, and the Si〇2 film 35 is patterned into a predetermined shape by photolithography and etching so that the n-type GaN layer 34 is formed. Partially exposed. Next, the Si〇2 film 35 thus patterned into a mask is used as a mask, and the n-type GaN layer 34 is removed by ICP-RIE using, for example, a chlorine-based gas, as shown in FIG. 15B. As shown, the n + -type GaN layer 33 is exposed. Next, for example, after the ohmic metal film is entirely formed by vacuum evaporation, the ohmic metal film is patterned into a predetermined shape by photolithography and etching, and is exposed. An ohmic electrode 36 is formed on the n + -type GaN layer 33. Thereafter, For example, 8 〇〇t:, 3 sec of rta, the ohmic electrode 36 and the n-type GaN layer are 3 ohmically contacted. As the ohmic metal film, for example, Ti/A1/Ti/Au is used in order from the bottom. For the multilayer film, the thickness of each film is, for example, the Ti film of the first layer is iOnm, the film of A1 is 300 nm, the film of the third layer is 3 〇 nrn, and the film of Au is 500 nm. A resist pattern formed by photolithography (not shown, for example, a metal film that is fully formed by vacuum evaporation). Thereafter, the resist pattern is followed, and the Si〇2 film 35 is photolithographically and etched. The pattern is patterned into a predetermined shape, and the GaN layer 34 is partially exposed. Secondly, it is retained in the original state.

-29- 201230149 The thickness of the film is set to, for example, a Ni film of 5 〇ηηη and an au film of 500 nm. A pad electrode 39 is formed on the ohmic electrode 36 by forming a fresh ruthenium electrode 38' on the Schottky electrode 37 which is larger than the Schottky electrode 37. Then, the base substrate 3 having the above-described diode structure is formed into a wafer-like n + -type GaN layer 33 and an n-type GaN layer 34, for example, and the GaN-based Schottky is produced. Diode. According to the third embodiment, the GaN Schottky diode can obtain the same advantages as the first embodiment. [Fourth embodiment] A GaN-based Schottky diode of the fourth embodiment and a method for producing the same will be described. First, as shown in FIG. 16A, an AlN/GaN multilayer film 41b having a thickness of about 1 μm, for example, is alternately laminated on the (1 1 1) plane-oriented si substrate 41a, for example, an A1N film having a thickness of 5 nm and a GaN film having a thickness of 20 nm. The base substrate 41' is formed into a growth mask 42 similar to that of the first embodiment. The growth mask 42 has a stripe window 42a and an auxiliary stripe window (not shown) similarly to the growth mask 12. For example, the growth mask 42 is formed by a Si〇2 film having a thickness of 0.3 μm. The length a of the stripe window 42a is looopm, the width b is ΙΟμπι, and the period 卩1 of the stripe window 42a is 9〇0111, and the period p2 is 1〇. 1〇μιη, the width of the mask portion is 80 μm, the length c of the auxiliary stripe window is ΐ2〇μηη, the width d is ΙΟμηι '<布100>, the interval between the stripe window 42a and the stripe window 42a is ΙΟμηι, and the stripe window 42a The length q at which the tip end portion and the auxiliary stripe window 42b overlap each other is 55 μm. Next, the n + -type GaN layer 43 doped with Si as an n-type impurity is grown in an island shape by the MOCVD method using the growth mask 42 in the (〇〇〇1) plane orientation -30 - 201230149 . The n-type GaN layer 43 has a thickness of, for example, 8 μm and an impurity concentration of, for example, 5 χ 10 cm 3 . The interval between the n + -type GaN layer 43 and the n + -type GaN layer 43 is, for example, about ΙΟμηι. The growth of the n + -type GaN layer 43 is performed, for example, at a temperature of 丨ioot and a pressure of 30 kPa. In the case of the n + type (for the growth of the layer 43 , for example, TMG and NH 3 are used as the material gases, and a and a are used as the carrier gas, and SiH 4 diluted with nitrogen is used as the n-type dopant. In this case, an island-like The η + -type GaN layer 43 is grown from one stripe window 42 a. Next, in order to promote the growth in the longitudinal direction, the growth pressure is increased to, for example, 8 kPa, the crystal growth condition is adjusted, and the n-type GaN layer 44 is grown by the M CVD method. On the n + -type GaN layer 43 , the thickness of the n-type GaN layer 44 is, for example, 5 μm, and the impurity concentration is, for example, lx10i6 cm-, and the entire n+-type GaN layer 43 and the n-type GaN layer 44 after the I^GaN layer 44 is grown. The interval of the &lt;n_2〇&gt; direction is, for example, about 5 μm. As shown in Fig. 16A, in the n + -type GaN layer 43 and the n-type GaN layer 44, a penetration difference row 45 is formed in the upper portion of the stripe window 42a. Next, as shown in FIG. 16B, for example, an organic s〇G (Spin on glass) liquid (not shown) is applied and a gap between the n+ type GaN layer 43 and the GaN layer 44 is filled to planarize the surface, for example, After the insulating film is integrally formed by the plasma CVD method to form, for example, a Si 〇 2 film 46 having a thickness of 1, a 3 〇 Si 〇 2 film 46 is formed. By patterning and etching, it is patterned into a predetermined shape of the Si〇2 film 46 which is only partially penetrated through the difference row 45. Next, a metal film for forming a Schottky electrode is integrally formed by, for example, vacuum deposition. The upper electrode 47 is formed as a Schottky electrode. As the metal film for forming the Schottky electrode, for example, a two-layer film of Ni/Au is used, and the thickness of each film is set to, for example, a Ni film of 50 nm and an Au film. -31 - 201230149 500 nm. Next, the back surface of the Si substrate 4 1 a of the base substrate 4 1 is thinned to a thickness of 50 to ΙΟΟ μηι by polishing or the like, and then a portion of the Si substrate corresponding to the stripe window 42 a of the growth mask 42 is formed. On the 4 1 a, a stripe-shaped via hole 4 8 having a width of about 20 μm or so is formed, and the AlN/GaN multilayer film 41b at the bottom of the via hole 48 is exposed. Next, 'AlN/GaN is passed through the via hole 48. The multilayer film 41b is removed by, for example, a plasma button using a chlorine-based gas, and then the growth mask 42 is removed by contact with the via hole 48 to expose the n + -type GaN layer 43. Next, 'from the Si substrate 4 1 The back side of a forms a Europe by, for example, vacuum evaporation The metal film is formed into a lower electrode 49. As the ohmic metal film, for example, a Ti/Al/NiAu multilayer film is used. Thereafter, the base substrate 4 having the above-described diode structure is formed such that one wafer contains an island-shaped n + type. The GaN layer 43 and the n-type GaN layer 44 are wafer-formed into a GaN-based Schottky diode for manufacturing purposes. Further, if necessary, the inside of the through hole 48 may be completely filled with, for example, Au, Cu, or the like, and the surface of the back surface side of the Si substrate 41a may be flattened to form the lower electrode 49. By filling the inside of the through hole 48 with Au, Cu or the like, the thermal conductivity can be improved, and the temperature rise due to heat generation during the operation of the GaN Schottky diode can be suppressed. According to the fourth embodiment, the GaN-based Schottky diode can obtain the same advantages as those of the first embodiment. [Fifth Embodiment] A GaN-based MIS (Metal-Insulator-Semiconductor) field effect transistor (FET) and a method of manufacturing the same according to the fifth embodiment will be described. -32- 201230149 First, as shown in FIG. 17A, an AlN/GaN having a thickness of about Ιμηι is grown on the substrate 51a of the (111) plane orientation, for example, an A1N film having a thickness of 5 nm and a GaN film having a thickness of 20 nm. A growth mask 52 is formed on the base substrate 51 of the layer film 51b in the same manner as in the first embodiment. The growth mask 52 has a stripe window 52a and an auxiliary stripe window (not shown) similarly to the growth mask 12. For example, the growth mask 52 is formed by a Si〇2 film having a thickness of 0·3 μm. The length of the stripe window 52a is 1 〇〇〇, the width b is ΙΟμηι, and the period of the stripe window 52a is? 1 is 9〇μιη, cycle? 2 is 1010μπ1 'the width of the mask portion is 80μιη' The length of the auxiliary stripe window is Ι20μπι, the width d is ΙΟμιη, and the interval between the stripe window 52a and the stripe window 52a in the &lt;1-1〇〇&gt; direction is ΙΟμηι' stripe The length q at which the end portion of the window 52a and the auxiliary stripe window 52b coincide with each other is 55 μm. Then, the n + -type GaN layer 53 doped with Si as an n-type impurity is grown in an island shape in the (0001) plane direction by the MOCVD method using the growth mask 52. The thickness of the n + -type GaN layer 53 is, for example, 8 μm, and the impurity concentration is, for example, 5 × l 〇 18 cm -3 . The interval between the n + -type GaN layer 53 and the n + -type GaN layer 53 is, for example, about 1 μm, and the growth of the n + -type GaN layer 53 is, for example, 丨1〇〇. 〇, 30kPa. When the n + -type GaN layer 53 is grown, for example, TMG and NH 3 are used as a material gas, and ruthenium and n 2 are used as a carrier gas. As a n-type dopant, nitrogen-diluted SiHU is used. In this case, the island-shaped η + -type GaN layer 53 grows from one stripe window 52a. Then, the n-type GaN layer 54 is grown on the n-type GaN layer 53 by MOCVD by increasing the growth pressure to, for example, 80 kPa '5 cycles of crystal growth conditions. The thickness of the n-type GaN layer 504 is, for example, an impurity wave degree of, for example, 1×10 16 cm·3. The n-type GaN layer 54 is such that the interval of the &lt;11-20&gt; direction of the entire n+-type GaN layer 53 and the n-type GaN layer 54 after growth is, for example, about 5 μm. Next, as shown in Fig. 17A, the growth of the n-type GaN layer 54 is followed.

After the 〆-type GaN layer 56 doped with magnesium (Mg) as a p-type impurity is entirely grown, for example, the p + -type GaN layer 56 is patterned into a predetermined shape by photolithography and etching. The thickness of the p + -type GaN layer 56 is set to, for example, about 500 nm, and the impurity concentration is set to, for example, 5×10 μm 9 cm − the growth of the p-type GaN layer 56 is performed, for example, at a temperature of 〇〇〇1〇〇〇c and a pressure of 3〇kPa. . When the p + -type GaN layer 56 is grown, for example, TMG and NH 3 are used as source gases, and n and n 2 are used as carrier gases, and bis(cyclopentadienyl)magnesium (CpaMg) is used as a p-type dopant. The p+ type 〇 is formed by the ICp_RIE using a gas-based etching gas, for example, by using an ICp_RIE using a gas-based etching gas, for example, by MOCVD, covering the p+-type GaN layer 56 which is patterned into a predetermined shape, and is fully grown. The n-type GaN layer 57' of Si mixed with an n-type impurity is grown in the same manner as the n-type GaN layer 58 doped with Si as an n-type impurity. The thickness of the n-type GaN layer 57 is set to, for example, 100 nm. The impurity concentration is set to, for example, lxl0i7 cm-3, the thickness of the n+ type germanium layer 58 is set to, for example, 100 nm, and the impurity concentration is set to, for example, 5 x 10 〇 18 cm -3 . Next, the n-type GaN layer 57 and the n + -type GaN layer 58 are patterned into a predetermined shape by photolithography and button etching, and a part of the n + -type GaN layer 58 is removed by photolithography and patterning. This etching is performed, for example, by ICP-RIE using a chlorine-based gas. Next, for example, an insulating film such as a §2 film or a SiN film is integrally formed by a plasma CVD method, and then the insulating film is patterned into a prescribed shape by photolithography and a surname -34-201230149. A gate insulating film 59 is formed on the GaN layer 57. The thickness of the polarity insulating film 59 is, for example, about 5 〇ηηη. Next, for example, after the Ni film is completely formed by vacuum evaporation, t' is formed into a prescribed shape by, for example, photolithography and etching, and a gate electrode 6 is formed on the gate insulating film 59. 0. Next, 'for example, after the Ti/A1/Au multilayer film is integrally formed by vacuum evaporation, 'by patterning the Ti/Al/Au multilayer film into a prescribed shape by, for example, photolithography and etching, in the n + type The source electrode 61 is formed on the layer 58. Then, the thickness of the portion corresponding to the stripe window 5 2 a of the growth mask 5 2 is thinned by, for example, polishing the Si substrate 51 a of the base substrate 51 from the back surface side to a thickness of, for example, about 5 〇 to 1 μm. On the i substrate 5 1 a, for example, a stripe-shaped through hole 62 having a width of about 20 μm is formed, and the AlN/GaN multilayer film 51b is exposed at the bottom of the through hole 62. Then, the AlN/GaN multilayer film 51b is removed by plasma etching using, for example, a chlorine-based etching gas through the via hole 62, and then the growth mask 52 is removed by the via hole 62 to expose the n + -type GaN layer 53. Next, the ohmic metal film is formed by, for example, vacuum evaporation from the back side of the base substrate 51, and the gate electrode 63 is formed. As the ohmic metal film, for example, a Ti/Al/NiAu multilayer film is used. From the above, a GaN-based MISFET for the purpose is manufactured. Further, the n + -type GaN layer 58 can be replaced with, for example, an n-type AlGaN layer or an undoped A1 GaN layer, as needed. In addition, it is also possible to completely fill the inside of the through hole 6 2 by, for example, plating Au, Cu, etc., and flatten the surface of the back side of the base substrate 5 - -35 - 201230149 to form a bungee. Electrode 63. By filling the inside of the via hole 6 2 with Au, Cu or the like, the thermal conductivity can be improved, and the temperature rise due to the heat generated during the operation of the GaN-based MISFET can be suppressed. The operation of this GaN-based MISFET will be described. In the GaN-based MISFET, the n + -type GaN layer 58 serves as a source region, the n-type GaN layer 53 becomes a drain region, and the n-type GaN layers 54 and 57 serve as a channel £ region. A P + -type GaN layer 56 having a high impurity concentration is provided under the n-type GaN layer 57 as a channel region. Since the n + -type GaN layer 5 is not formed directly under the end portion of the gate electrode 60 on the source electrode 61 side, the n-type GaN layer 57 as the channel region is enlarged by the p + -type GaN layer 56. Therefore, the GaN-based MISFET is a normally-off structure. By applying a positive (+) bias voltage to the gate electrode 6A, electrons are induced in the n-type GaN layer 57 near the interface of the gate insulating film 59 directly under the gate electrode 60, and the result is ' Since a channel is formed between the source electrode 161 and the drain electrode 63, the GaN-based MISFET is turned on, and a current flows between the source electrode 6A and the drain electrode 63. In the GaN-based MISFET, a high barrier voltage of the p+ type GaN layer 56 can be obtained, and a high threshold withstand voltage can be obtained. Further, since the n + -type GaN layer 58 having a high impurity concentration forms a source region, the source resistance can be reduced. Further, although the thickness of the n-type GaN layer 54 under the p + -type GaN layer 56 is as thin as about 5 μm, since the breakdown voltage of GaN is considerably large, 3 〇〇 ν / μη, a high threshold withstand voltage can be obtained. According to the fifth embodiment, the GaN-based MISFET can obtain the same advantages as those of the first embodiment. [Embodiment 6] In the sixth embodiment, the method of manufacturing a GaN-based Schottky-36-201230149 diode of the third embodiment is particularly directed to the use of a c-plane sapphire substrate as the base substrate 3 1 . ί brother to explain. First, as shown in Fig. 5, a growth mask 32 is directly formed on the C-plane sapphire substrate of the base substrate 31 as in the third embodiment. Next, the C-plane sapphire substrate on which the growth mask 32 is formed is introduced into the MOCVD apparatus, for example, by surface retention at 1 l00 〇 c for 5 minutes in a carrier gas composed of 混合2 and a mixed gas. Next, for example, after the temperature is lowered to 55 〇〇C, NH3 and TMG are supplied, and the amorphous GaN layer is grown to a thickness of about 30 nm. Next, while circulating NH3, the temperature is raised to i150 ° C, and after holding at 5 Hz / m for 10 minutes, TMG and SiH 4 are supplied at a temperature of, for example, 1 〇 5 0 to 1 1 ° C. The n + -type GaN layer 33 and the n-type GaN layer 34 grow. Thereby, the island-shaped n + -type GaN layer 33 and the n-type GaN layer 34 can be grown. The subsequent steps are the same as in the third embodiment. According to the sixth embodiment, in addition to the advantages similar to those of the third embodiment, since a C-plane sapphire substrate can be used as the base substrate 31, it is not necessary to grow a GaN layer on the C-plane sapphire substrate, and light can be simplified. In the manufacturing process of the Schottky diode, the advantage of reducing the manufacturing cost of the GaN Schottky diode can be obtained. [Seventh embodiment] A method of manufacturing a GaN-based semiconductor device according to the seventh embodiment will be described. In the seventh embodiment, as shown in Fig. 18A, as shown in Fig. 18A, the GaN-based semiconductor layer 13 is placed on the base substrate 11 using the growth mask 12 shown in Fig. 3, -37-201230149. After the surface orientation is grown in an island shape, a necessary first electrode 14 is formed on the upper surface of the GaN-based semiconductor layer 13 (hereinafter referred to as "the first surface"). The material of the first electrode 14 and the ith electrode are The formation method is selected as needed. The material of the second electrode 14 is based on the first electrode 14 being an ohmic electrode or a Schottky electrode, or the uppermost layer of the GaN-based semiconductor layer 13 to which the working electrode 14 is in contact. Conductive type I and specifically s, the first electrode 丨4 is, for example, a multilayer film sequentially Ni/Au/Ni, and the thickness of each film is, for example, a Ni film of the first layer. 5 nm, the Au film is 5 〇〇 nm, and the film of the second layer is 100 nm. Further, the ith electrode M is formed by comprehensively forming the second electrode 14 by, for example, a vacuum deposition method or a sputtering method. After the metal film is alloyed, the metal film or alloy film is patterned by photolithography and etching. In Fig. 8a, the second electrode is formed in a portion other than the peripheral portion of the first surface 13a of the GaN-based semiconductor layer 13, for example, a portion spaced apart from the edge portion by 6 μm or more, but may be formed in GaN. The entire first surface 133 of the semiconductor layer 13 is formed. Next, as shown in Fig. 18B, the growth mask 12 is removed by a wet etching method or the like. For example, the growth mask 12 is composed of a Si 2 film. In this case, it is removed by wet etching using buffered hydrofluoric acid. The removal of the growth mask 12 is not essential, but is effective in improving the yield of the separation of the bucket conductor layer 13 to be described later. As shown in FIG. 19, the first support substrate 16 on which the metal b is formed on the main surface is prepared, and the metal 15 for the second support substrate 16 and the first GaN-based semiconductor layer η formed on the base substrate η are prepared. The i-th electrode 14 on the surface 13a is opposed to each other. As the subsequent metal 15, a solder-38 - 201230149 paste can be used, and more specifically, for example, an Au/Sn solder paste film is used. Further, as the first support substrate 16, for example, , can use elemental semiconductors such as Si, sic For compounds such as GaAs, GaP, AIN 'GaN, ZnO, etc., various metals, alloys, nitride-based ceramics, oxide-based ceramics, diamond, carbon, plastics, etc., it is necessary to choose. A typical example of the support substrate 16 is a Si substrate. Next, as shown in Fig. 20, the succeeding metal 15 of the first support substrate 丨6 and the GaN-based semiconductor layer 13 formed on the base substrate n are provided. The first electrode 14 is brought into contact with each other, and is heated in this state so as to be subsequently melted by the metal 15 to be welded to the first electrode 14. In this manner, the second support substrate 16 is next to the first surface 13 &amp; top = the first electrode 14 of the GaN-based semiconductor layer 13 formed on the base substrate 11. For example, when the Au-sn solder paste film is used as the adhesive metal 15 and the first electrode 14 is composed of the Ni film described above and the Ni film and the Ni film formed thereon, The i-support substrate 16 is heated by the metal 15 and the first electrode 14 in contact with each other, and then heated by the metal 15 to be soldered to the i-th electrode 14, and the first support substrate 16 is followed by the first Electrode 1 4. Next, as shown in FIG. 21, the base substrate 11 and the first support substrate 16 which are integrated by the above are peeled off between the base substrate 1H GaN system and the conductive layer 13 as described above. For example, by ultrasonically stimulating the soil substrate 1 1 and the first support substrate 16 which are formed, the soil is separated between the two soil plates 1 1 and the GaN semiconductor layer i 3 . The end faces of the base substrate 11 and the first support substrate 16 are mechanically stimulated, and are peeled off between the base substrate 11 and the GaN-based semiconductor 13 so as to be formed on the base substrate. - the system-39-201230149 The surface of the GaN-based semiconductor layer 13 in which the semiconductor layer 13 is peeled off and exposed is referred to as a second surface 1 3 b » Next, as shown in FIG. 22, in the GaN-based semiconductor layer 13 The necessary second electrode 17 is formed on the two faces 13b. The material of the second electrode 17 and the method of forming the second electrode 17 are selected as needed. The material of the second electrode i 7 is adapted to the second electrode. 17 is an ohmic electrode or a Schottky electrode or a conductive type of the uppermost layer of the GaN-based semiconductor layer 13 in contact with the second electrode 17 Specifically, the second electrode 17 is, for example, a multilayer film in which Ti/Al/Au is sequentially used, and the thickness of each film is, for example, the Ti film is 5 nm, the A1 film is 45 nm, and the Au film is In addition, the second electrode 17 is formed by forming a metal film or an alloy film for forming the second electrode 17 in a comprehensive manner by, for example, a vacuum deposition method or a sputtering method. The alloy film is formed by patterning by photolithography and lithography into a predetermined shape. In FIG. 22, the second electrode 17 is formed on the entire second surface 13b of the GaN-based semiconductor layer 13, but may be formed in addition to the GaN system. A portion other than the peripheral portion of the second surface 1 3 b of the semiconductor layer 13 is, for example, a portion spaced apart from the edge portion by 6 μm or more. When the second electrode 17 is an ohmic electrode, the GaN-based semiconductor layer 13 is required. After the second electrode 17 is formed on the second surface 13b, the laser beam is irradiated to the second electrode 17 by laser annealing, whereby the second electrode 17 can be made lower in electrical resistance than the GaN-based semiconductor layer 13 Ohmic contact. For example, the second electrode 17 is a total thickness composed of the above Ti film, A1 film, and Au film. In the case of a 50 nm multilayer metal film, by using laser light having a wavelength of 266 nm, the light transmittance of the multilayer metal film is about 2020% and the laser light is sufficiently absorbed, so the GaN system can be used. The interface 40 - 201230149 of the semiconductor layer 13 and the second electrode 17 is sufficiently heated to perform sufficient laser annealing. Next, as shown in Fig. 23, 'the preparation of a main surface is followed by the formation of a metal (not shown). The supporting substrate 18 is in contact with the second electrode 17 on the second surface 13b of the GaN-based semiconductor layer 13 formed on the first supporting substrate 16 by the bonding metal of the second supporting substrate 18, and is in this state. Heating is followed by welding with the second electrode 17 by metal melting. In this manner, the second support substrate 18 is next to the second electrode 17 of the second surface 13b of the GaN-based semiconductor layer 13 formed on the first support substrate 16. For example, in the case where the Au/Sn fresh paste film is used as the metal crucible, and the second electrode 14 is composed of the above-described Ni film, the Au film, and the Ni film formed thereon, 2, the support substrate 18 is heated to about 250 ° C in a state where the metal and the second electrode 17 are in contact with each other, and then the metal is melted to be soldered to the second electrode 17. The second support substrate 18 is attached to the second electrode. 17. As the metal paste, the solder paste can be used. More specifically, for example, an Au/sn solder paste film is used. In the same manner as the first support substrate 16, the elemental semiconductor such as Si, a compound semiconductor such as Sic GaAs, GaP, AIN, GaN or ZnO, or various metals and alloys can be used. The nitride ceramic, the oxide ceramic, the diamond, the carbon, the plastic, and the like may be selected as needed, but it is preferable to use a metal or alloy such as Cu which is rich in heat release property. A typical example of the second support substrate 18 is, for example, a plate (a thickness of, for example, i-plated Au and an Au/Sn solder paste film, or an A1N ceramic substrate on which a metal line is formed.) The two-terminal GaN-based semiconductor device in which the first electrode 14 is formed on the first surface 13a of the GaN-based semiconductor layer 3 and the second electrode 13b is formed on the second surface 13b is specifically formed by -41 to 201230149. The GaN-based two-pole system is formed between the first support substrate 16 and the second support substrate 18. The first electrode 14 and the second electrode 17 are an anode or a cathode. The GaN-based diode system pn In the pn junction diode, the first electrode 14 and the second electrode 17 are ohmic electrodes, and the first electrode 14 and the second electrode 17 in the Schottky diode are connected to the diode or the Schottky diode. One of them is a Schottky electrode, and the other is an ohmic electrode. The interval between the first support substrate 16 and the second support substrate 18 is, for example, about 20 μm. The first support substrate 丨6 after the base substrate 11 is peeled off An example of the SEM image of the surface on the side of the GaN-based semiconductor layer 13 is shown in Fig. 24. As the base substrate 11, A GaN layer having a thickness of 2 μm is grown on a C-plane sapphire substrate. The GaN layer is grown as a GaN-based semiconductor layer 13. As the growth mask 12, the same pattern as that shown in Fig. 3 is used. The growth mask 12 is borrowed. The length a of the stripe window 1 2a formed by the Si 〇 2 film having a thickness of μ 3 μm formed by the plasma CVD method is 12 pm, the width b is 5 μm, and the period of the stripe window 12a is ρ 85 μm, and the mask portion The width of i2c is 80 μm. The length 1 of the end portions of the stripe window 12a overlapping each other is 6 5 μm. As the first supporting substrate 16, a Si substrate is used, and an Au/Sn solder paste as a bonding metal 15 is formed thereon. When the GaN layer is grown, first, a low-temperature GaN buffer layer (not shown) is grown on the base substrate η on which the growth mask 12 is formed by a conventional technique. Specifically, TMG is used by the MOCVD method. NH3 is used as a material gas, and % and N2 are used as carrier gases, and at a temperature of 53 (rc does not grow a low-temperature GaN buffer layer having a thickness of 3 〇 nm. Thereafter, the supply of TMG is stopped, for example, the temperature is raised to 115 (re-supply after TC) TMG 'under pressure 3 kPa Conducted -42- 201230149

The growth of GaN. Thus, the GaN layer grows in an island shape. The GaN layer has a thickness of 15 μm. As shown in Fig. 24, a group of striped island-shaped GaN layers which are observed by peeling can be seen. An enlarged view of the end portion of the stripe-shaped island-shaped GaN layer of Fig. 24 is shown in Fig. 25A, and an enlarged view of the central portion of the island-shaped GaN layer is shown in Fig. 25B. The result of varying the width b of the stripe window 12a of the growth mask 12 shown in Fig. 3 and the width of the mask portion 12c, and examining the extent to which the GaN-based semiconductor layer 13 is peeled off from the base substrate 11 will be described. The growth mask 12 is formed of a SiO 2 film having a thickness of 〇3 μm formed by a plasma CVD method. The base substrate 丨丨 and the GaN-based semiconductor layer 丨3, the growth conditions of the GaN-based semiconductor layer 13, the first support substrate 16 and the subsequent metal 15 are the same as those of the sample shown in Fig. 24 . A multilayer film of Ni/Au/Ni as the first electrode 丨4 is formed on the λ surface 13a of the GaN layer as the 〇aN-based semiconductor layer 13 (the thickness of each film is 5 nm of the first layer of Ni, Au) The film was 500 nm, and the first layer of Ν1 film was i〇〇nm). The interval between the stripe-shaped GaN layer of the GaN-based semiconductor layer 13 and the stripe-shaped GaN layer adjacent thereto is approximately 5 to 8 μm. When the period is ι〇μηι or less, the adjacent GaN layers are easily combined with each other, and in order to prevent this, a portion as shown in Fig. 5 is formed in the growth mask. The width b of the stripe window 12a is changed in stages of Ιμηι, 3μιη, 5μπι, 1〇μιη, 20μη^5, and the width of the mask portion Uc is 3 μm 5 μιη, 1 Mm, 5 0 μηι, 80 μπι, 1 〇〇μηι 6 Stage changes. The number of stripe-shaped GaN layers peeled off from the sapphire substrate as the base substrate was counted, and the ratio with respect to the total number of strips was measured. The results are shown in Table 1. In addition, the portion of the oblique line of Table 1 was not tested. -43- 201230149 [Table i] Window width mask width 1 μτη 3// m 5jU m 10jU m 20 μ m 3jU mm 5% / / / 5ju m 100% / 1% 10jU m 100% 95% 20% 1% 0% 50//m / 100% 100% 60% 3% 80jt / m / 100% 100% 60% 3% 100 / / m / 100% 60% / 200m / z 100% 95% As shown in Table 1, in When the width b of the stripe window 12a is 2 μm, the GaN layer is hardly peeled off. The reason for this is that the sapphire substrate and the GaN layer in the stripe window 12a of the Ni/Au/Ni multilayer film as the first electrode 14 and the stripe window 12a having the width b of 20 μm are compared with respect to the first surface 13a of the GaN layer. At the next strength, the latter is stronger than the former. Since the width of the stripe-shaped GaN layer is practically 300 μm or less, it can be said that the width b of the stripe window 12a is preferably 20 or less. Further, as is clear from Table 1, when the width of the mask portion 12c is smaller than the width b of the stripe window 12a, the GaN layer cannot be peeled off. Accordingly, it can be said that the growth mask 12 (the width b of the stripe window 12a/the width of the mask portion 12c) S1 is preferable. According to the seventh embodiment, in addition to the advantages similar to those of the first embodiment, the following various advantages can be obtained. In other words, after the first support substrate 16 of the GaN-based semiconductor layer 13 grown on the base substrate 11 is separated from the base substrate 11 by the first support substrate 166, the first support substrate 16 and the GaN-based semiconductor layer 丨3 are separated from the base substrate 11 On the second surface 13b of the GaN-based semiconductor layer 13, the second support substrate 18 is followed. For this reason, the use of a high thermal conductivity substrate as the second support substrate 18' can significantly increase the 2-terminal GaN-based semiconductor sandwiched between the first -44-201230149 support substrate 16 and the second support substrate 18. The exothermicity of τ's can realize a highly exothermic 2-terminal GaN-based semiconductor device. Further, according to the seventh embodiment, since the GaN-based semiconductor layer is grown on the sapphire substrate, it is not necessary to use the laser separation technique used in the past as a method of peeling off the sapphire substrate, so that the laser separation technique is not used. Various problems. That is, in the laser separation technique, the laser light having a wavelength of 266 nm oscillated by a pulse high output laser is irradiated from the side of the sapphire substrate, and the depth from the interface between the sapphire substrate and the semiconductor layer is increased to a depth of (7). The absorption of the GaN-based semiconductor layer causes the temperature of the portion to rise to a high temperature and thermally decomposes, and the sapphire substrate is peeled off at the interface between the sapphire substrate and the (tetra)-based semiconductor layer by the generated nitrogen (N2) gas. Although the laser separation technique can effectively peel off the sapphire substrate locally, it is difficult to control the pressure of the generated nitrogen gas. When the sapphire substrate is peeled off, the pressure of the peeling becomes uneven in the surface of the sapphire substrate. ―, due to the uneven pressure-induced push-up effect, cracks may occur in the conductor layer and cause damage. Therefore, it is difficult to peel off the blue f-stone substrate having a full irradiation area over which the laser light is spread without damaging the GaN-based semiconductor layer. According to the seventh embodiment, the base layer u such as a sapphire substrate can be easily peeled off from the (10)-based semiconductor layer B in a manner that the (four)-based semiconductor layer is not damaged. Further, it is necessary to use a pulsed high-output laser with respect to the laser detachment technique. According to the seventh embodiment, since the pulse high-output laser is not required, the manufacturing cost of the GaN-based semiconductor device is low. </ RTI> </ br> - 45 - 201230149 [Embodiment 8] A method of manufacturing a vertical conduction type GaN Schottky diode according to the eighth embodiment will be described. First, as shown in Fig. 26, a growth mask 32 similar to that of the growth mask 12 shown in Fig. 3 is formed on the base substrate 31. Next, the n + -type GaN layer 33 doped with Si as an n-type impurity is grown in an island shape by the MOCVD method using the growth mask 32 in the (〇〇〇1) plane orientation. In this case, an island-shaped n + -type GaN layer 33 grows from one stripe window 32a. The interval between the n + -type GaN layer 33 and the n + -type GaN layer 33 is, for example, about ΙΟμπι. The growth of the n + -type GaN layer 33 is performed, for example, at a temperature of 11 〇, and the pressure is performed at 30 kPa mainly in a lateral growth mode. When the n + -type GaN layer 33 is grown, for example, TMG and NH 3 are used as a material gas, and I and & as a carrier gas are used, and nitrogen-diluted SiH 4 is used as an n-type dopant. By the control of the material gas supply conditions (for example, the ratio of the supply amount of TMG and the supply amount of NH3), for example, the thickness of the n + -type GaN layer 33 is about μ5 μm with respect to the width of the n + -type GaN layer 33 of 70 μm. The impurity concentration of the η + . type GaN layer 33 is, for example, 1×10 〇18 cm·3. Then, the supply amount of S i Η 4 is reduced, and then the growth pressure is, for example, 60 kPa', and the TMG supply amount is increased by, for example, twice, and the growth condition is mainly grown in the longitudinal direction, and the n-type GaN layer 34 is grown to n by MOCVD. + * Type ΘάΝ layer 33. The thickness of the n-type GaN layer 34 is, for example, 5 μm, and the impurity concentration is, for example, 3 x 1016 cm-3. The protruding distance from the side surface of the n + -type GaN layer 33 thus grown in the n-type GaN layer 34 toward the lateral n-type GaN layer 34 is about 4 μm on one side. In the n + -type GaN layer 3 3 and the n-type GaN layer 34, a penetration row is formed in the upper portion of the stripe window 32a. 201230149 Next, for example, an insulating film is integrally formed by a plasma CVD method to form, for example, a SiCh film 35 having a thickness of Ιμπι, and then the 〇2 film 35 is patterned into a predetermined shape by photolithography and surname, and The side surface of the 1!-type core layer 34 on the layer 34 is spaced apart from the peripheral portion of the range of about 5 μm and the portion of the stripe window 32a having a width of 8 μm, forming a stripe-shaped SiO 2 film 35. The 3 丨 02 film 35 is provided to serve as a field plate (fieid pUte) for mitigating the concentration of electric field in the end portion of the Schottky electrode 37 to be described later. Next, for example, a metal film for forming a Schottky electrode is integrally formed by a vacuum deposition method, and then the metal film is patterned into a predetermined shape by photolithography and etching. As the metal film, a multilayer film of Ni/Au/Ni/Au is formed (the thickness of each film is such that the Ni film of the first layer is 2 〇 nm, the Au film of the first layer is 10 〇〇 nm, and the second layer The Ni film was 20 nm, and the second layer of Αι film was 500 nm). In this manner, the Schottky electrode 37 is formed in a state where the opening of the Si〇2 film 35 is in contact with the n-type GaN layer 34. Here, the Ni film of the second layer in the Ni/Au/Ni/Au multilayer film is provided as a barrier layer for preventing diffusion of Sn from the Au/Sn solder paste film, and the Au/Sn solder film is used as The main surface formed on one main surface of the crucible 1 support substrate 16 is used by the metal 15. In the same manner as in the seventh embodiment, the first supporting substrate 16 for forming the bonding metal 15 is subsequently formed, the base substrate 31 is peeled off, and the second supporting substrate 18 for forming the metal is formed. GaN-based Schottky diode. In the GaN-based Schottky diode manufactured in this manner, the Schottky electrode 37' is formed on one surface of the n-type GaN layer 34, and the ohmic electrode is formed on one surface of the n+-type GaN layer 33. Therefore, in the GaN-based Schottky diode of -47-201230149, the lamination direction of the 11+-type GaN layer 33 and the n-type GaN layer 34 between the Schottky electrode 37 and the ohmic electrode, in other words, in the longitudinal direction Circulation. That is, the GaN Schottky diode is of a longitudinal conduction type. According to the eighth embodiment, the vertical conduction type GaN-based Schottky diode can obtain the same advantages as those of the seventh embodiment. [Ninth embodiment] A method of manufacturing a large-area power GaN Schottky diode of the ninth embodiment will be described. First, as shown in Fig. 27, a long mask 71 is formed on a base substrate (not shown). The growth mask 71 finally has a stripe window 7 1 a similar to the stripe window 1 2 a of the growth mask 12 shown in Fig. 2 in the rectangular wafer region 72' which becomes one element. On a wafer area 7.2, a plurality of stripe windows 7 i a, for example, 6 〇〇 strips, are included in the &lt; 1 1 -20&gt; direction. For example, the length a of the stripe window 71a is ΐ2〇〇μηη, the width b is ιμηι, the width of the mask portion 71c is 3#!11, and the period 1)1 of the stripe window 713 is 4b111. In this case, for example, the size of the wafer region 72 is 24 μm in the &lt;η·2〇&gt; direction and 1300 μηη in the &lt;1-100&gt; direction. In this case, in addition to the stripe window 71a, the growth mask 71 has an island-shaped GaN which grows from each of the stripe windows 7 along the side opposite to each other in the wafer region 72 adjacent to each other. The composite prevention window 71d in which the semiconductor layers 13 are not aligned with each other in the &lt;η·2〇&gt; direction. The combined prevention window 71d is formed by, for example, a pitch of two jaws on one side of the window having the same shape as the stripe window 71a, and has a direction parallel to the &lt;U_20&gt; direction and &lt;^00&gt; A rectangular window with a large edge*SlxS2 (for example, Sl=4_'S2=10_). -48-201230149 The interval between the combined prevention windows 71d formed along a pair of mutually opposing sides of the mutually adjacent wafer regions 72 is set, for example. Next, using the growth mask 71, the GaN layer 73 having the n-type impurity as the n-type impurity and the GaN layer 73 are grown in an island shape by the M0CVD method: the growth of the n-type GaN layer 73 is, for example, At a temperature of i 1 〇〇. . In the growth mode, the growth mode is 6纵向kpa in the vertical and horizontal directions. In this case, the H + -type GaN layers 73 grown from the respective stripe windows 71 & each of the wafer regions 72 are combined to each other, and a large 〇 + -type GaN layer 73 can be obtained as a whole. When the GaN layer 73 is grown, for example, butyl mg and yttrium are used as source gases, yttrium and A are used as carrier gases, and nitrogen-diluted SiH4 is used as n-type dopants. The impurity concentration of the n + -type GaN layer 73 is used. For example, it is set to lxl018cm·3. For example, when the thickness of the n + -type GaN layer 73 reaches ΙΟμπι, the supply amount of SiH4 is decreased, and the n-type (four) layer is grown to a thickness of about 8 μm. The impurity concentration of the n-type GaN layer is set to, for example, the reason why the sync window 71d of the ixl〇i6cm_3 hinders the growth of the &lt;11-20&gt; direction of the n+ type GaN layer 73, and the growth mask shown in Fig. 5 is used. The situation in 2 is essentially the same. In other words, the n + -type GaN layer 73 is formed with a {丨_丨00丨 plane whose growth rate is slow with the combined prevention window 7 1 d as a starting point. The {1-100} face and the {1 1-20} face are inclined by 30. Or 90. Since it has a triangular shape as shown in Fig. 27, the growth stops. As a result, as shown in Fig. 27, the n + -type GaN layer 7 3 and the n-type GaN layer between the wafer regions 72 adjacent to each other are separated from each other via the element separation strip portion. Then, in the same manner as in the seventh embodiment, the steps of forming the first supporting substrate 16 for the subsequent metal 15 and the peeling of the base substrate, and the subsequent step of forming the second supporting substrate 18 for forming the metal with -49-201230149 are performed. A large-area power GaN Schottky diode for manufacturing purposes. In the large-area power GaN Schottky diode thus manufactured, a Schottky electrode is formed on one surface of the n-type GaN layer 74, and an ohmic electrode is formed on one surface of the n + -type GaN layer 73. Therefore, in the large-area power GaN-based Schottky diode, the current flows in the lamination direction of the n + -type GaN layer 73 and the n-type GaN layer between the Schottky electrode and the ohmic electrode, in other words, in the longitudinal direction. That is, the large-area power GaN Schottky diode is a longitudinal conduction type. According to the ninth embodiment, the longitudinal conduction type large-area power 〇aN-based Schottky diode can obtain the same advantages as the seventh embodiment. [Tenth embodiment] A method for producing a GaN-based Schottky diode of the tenth embodiment will be described. First, 'ain film having a thickness of 30 nm and a GaN film having a thickness of 20 nm are formed on the si substrate 41a having the same (1 1 1) plane orientation as in the fourth embodiment, for example, by the MOCVD method, for example, 1 i 〇〇 °c The temperature is sequentially increased, and a growth mask 42 is formed on the base substrate thus obtained in the same manner as in the first embodiment. The growth mask 42 has a stripe window 42a and an auxiliary stripe window (not shown) similarly to the growth mask 1 of the Jth embodiment. For example, the 'growth mask 42 is formed by a Si〇2 film having a thickness of a claw, and the length a of the stripe window 42a is ΙΟΟΟμΓη, the width ^1 is 1〇μ〇1, and the period of the stripe window 42a is 90 μm, period p2 1〇1〇μΓη, the width of the mask portion is 8〇μιη 'the length of the auxiliary stripe window c is κομίη, the width d is ΐ〇μιη, &lt;1-100&gt; direction of the stripe window 42&amp; and the stripe window 42&amp; The interval is ι〇μιη, the length of the end portion of the stripe window 42a and the auxiliary stripe window 42b coincide with each other -50 - 201230149 q is 5 5 μηη, and secondly, the growth mask 42 is used to make the doping as the n-type by MOCVD. The Si n + -type GaN layer 43 of the impurity grows in an island shape in the (0001) plane orientation. The thickness of the s-type n-type GaN layer 43 is, for example, 8 μm, and the impurity concentration is, for example, 5 × 10 18 cm·3. The η + -type GaN layer 43 and the n + -type GaN layer 43 are separated by, for example, about 1 μm. The growth of the n + -type GaN layer 43 is carried out, for example, at a temperature of 1,100 ° C and a pressure of 30 kPa. When the n + -type GaN layer 43 is grown, for example, Mn 2 and n Η 3 are used as the material gas ‘ η 2 and n 2 are used as the carrier gas, and nitrogen-diluted SiH 4 is used as the n-type dopant. In this case, an island-shaped η + -type GaN layer 43 grows from one stripe window 42a. Then, the growth pressure is increased to, for example, 80 kPa in the longitudinal direction, and the crystal growth conditions are adjusted, and the n-type GaN layer 44 is grown on the n + -type GaN layer 43 by the m〇CVD method. That! The thickness of the GaN layer 44 is, for example, s history of 5 μm. The impurity concentration is, for example, ixi〇i6crn-3. The interval of the &lt;1 1-20&gt; direction of the n-type GaN layer 43 and the n-type GaN layer 44 after the growth of the ^-type GaN layer 44 is, for example, about 5 (im. As shown in Fig. 6A, in the γ type The GaN layer 43 and the n-type GaN layer 44 form a diffusion gap 45 in the upper portion of the stripe window 42a. Thereafter, a Schottky electrode (not shown) is formed on the n-type GaN layer 44, and then '7' In the same manner, the GaN-based Schottky, which is used for the purpose of forming the first support substrate 16 followed by the metal crucible 5, the separation of the base substrate, and the subsequent formation of the second support substrate for the metal, is performed. According to the tenth embodiment, the GaN-based Schottky diode can obtain the same advantages as the seventh embodiment. -51 - 201230149 [Eleventh Embodiment] The GaN-based light-emitting diode according to the eleventh embodiment First, in the same manner as in the first embodiment, as shown in Fig. 28, a growth mask 82 is formed on the base substrate 81. The base substrate 81 is grown on a C-plane sapphire substrate. a GaN layer having a thickness of 2 μm. The growth mask 82 is the same as the growth mask 12 The stripe window 82a and the auxiliary stripe window (not shown). For example, the growth mask 82 is formed by a SiO 2 film having a thickness of 33 μm, and the length a of the stripe window 82a is ΙΟΟΟμιπ, the width b is 1 〇μm, and the stripe The period of the window 82a is ρΑ90μπι, the period p2 is ΐΟίΟμηη, the width of the mask portion is 80 μm, the length c of the auxiliary stripe window is ΐ2〇μπι, the width d is ΙΟμιη, and the stripe window 32a of the &lt;1-1〇〇&gt; direction is The interval between the stripe windows 32a is 10 μm, and the length q at which the end portions of the stripe window 32a and the auxiliary stripe window 32b overlap each other is 55 μm. Next, the growth of the Si is used as the n-type impurity by the MOCVD method using the growth mask 82. The +-type GaN layer 83 grows in an island shape in the (〇〇〇1) plane orientation. The thickness of the n + -type GaN layer 83 is, for example, ι〇μηη, and the impurity concentration is, for example, a 5×10 cm 3 . The n-type GaN layer 83 and The interval of the η + -type GaN layer 83 is, for example, approximately ΙΟ μηη. The growth of the n + -type GaN layer 83 is performed, for example, at a temperature of 1100 ° C and a pressure of 30 kPa. When the n + -type GaN layer 83 is grown, TMG and NH 3 are used as a material gas. 'Use I and N2 as carrier gases, using nitrogen Diluted SiH4 is used as the n-type dopant ◊ In this case, an island-shaped η + -type GaN layer 83 is grown from one stripe window 32a. Secondly, the crystal growth condition is adjusted to promote the growth in the longitudinal direction and MOCVD is used. The n-type GaN layer 84 is grown on the n+ type core layer 83. The type 11-52-201230149

The thickness of the GaN layer 84 is, for example, 5 μm. The impurity concentration is, for example, 1×10 cm. The interval of the &lt;11 _2 〇&gt; direction of the entire Δ layer 8 3 and the n-type GaN layer 84 after the GaN layer 84 is grown is, for example, about It is 5μηη. In the n + -type GaN layer 83 and the n-type GaN layer 84, a penetration row is formed in the upper portion of the stripe window 82a, and the illustration thereof is omitted. Next, a light-emitting layer 85 having an InGaN/GaN multiple quantum well structure (MQW) and a p + -type GaN layer 86 are grown on the n-type GaN layer 84 by MOCVD. The thickness of the light-emitting layer 85 is generally 50 nm or less, and the thickness of the p + -type GaN layer 86 is, for example, about 10 μm, because the light-emitting layer 85 and the p + -type GaN layer 86 grow toward the side of the n-type GaN layer 84 because they are very thin. Almost negligible. Next, for example, an insulating film such as a Si〇2 film 35 having a thickness of Ιμηη is integrally formed by a plasma CVD method, and then the Si〇2 film 87 is patterned into a predetermined shape by photolithography and etching to form a p+ type GaN layer. 86 is partially exposed. Next, after the ohmic metal film is completely formed by, for example, vacuum evaporation, the metal film is patterned into a predetermined shape by photolithography and etching. Thus, the electrode δ8 is formed in a state of being in contact with the P + -type GaN layer 86. As the ohmic metal film, for example, a two-layer film of Ni/Au is used, and the thickness of each film is, for example, 50 nm for the Ni film and 5 〇〇 nm for the Au film. Then, similarly to the seventh embodiment, the second support substrate 16 on which the metal 15 is subsequently formed is removed, and the base substrate 81 is peeled off. Next, on the surface of the n + -type GaN layer 83 exposed by the peeling of the base substrate 81, for example, a Zn ruthenium film is formed as a transparent ohmic electrode. According to the above, a GaN-based light-emitting diode of interest can be manufactured. -53-201230149 According to the first embodiment, the GaN-based light-emitting diode can be obtained in the same manner as in the first and seventh embodiments. [Twelfth Embodiment] A method of manufacturing a two-terminal, three-terminal GaN-based composite semiconductor device according to the second embodiment will be described. First, as in the first embodiment, as shown in Fig. 29, a growth mask 92 is formed on the base substrate 91. As the base substrate 91, for example, a GaN layer having a thickness of 2 μm grown on a C-plane sapphire substrate is used. The growth mask 92 has a stripe window 92a and an auxiliary strip window (not shown) similarly to the growth mask 12. For example, the growth mask 92 is formed by a Si〇2 film having a thickness of 0.3 μm, and the length a of the stripe window 92a is ΙΟΟΟμηη, the width b is 5 μm, the period P1 of the stripe window 92a is 90 μm, and the period p2 is 1〇1〇. Μιη, the width of the mask portion is 80 μm, the length c of the auxiliary stripe window is 1 2 〇 pm, and the width d is ΙΟμπι ' &lt;1-100&gt; the direction of the stripe window 92a and the stripe window 92a is 1 Ομηι 'stripe window The length q at which the end portion of 92a and the auxiliary stripe window 92b coincide with each other is 55 μm. Next, the η + -type GaN layer 93 doped with Si as an n-type impurity is grown in an island shape in the (0001) plane by the MOCVD method using the growth mask 92. The thickness of the n + -type GaN layer 93 is, for example, ι 5 μm, and the impurity concentration is, for example, lxl017 cm-3. The η + -type GaN layer 93 and the n + -type GaN layer 93 are, for example, about 5 ΙΟ μπι. The growth of the n + -type GaN layer 93 is carried out, for example, at a temperature of 1,100 ° C and a pressure of 30 kPa. When the n + -type Ga &gt; 93 grows, for example, TMG and ruthenium are used as source gases, and % and % are used as carrier gases, and nitrogen-diluted SiH4 is used as the 11-type dopant. In this case, an island-shaped n + -type GaN layer 93 is elongated from a stripe window 92 & -54 - 201230149. Next, the crystal growth condition is adjusted to promote the growth in the vertical direction, and the n-type GaN layer 94 is grown on the n + -type GaN layer 93 by the MOCVD method. The thickness of the n-type GaN layer 94 is, for example, 4 μm, and the impurity concentration is, for example, 1×10 16 cm 3 . The interval of the &lt;ιΐ-2〇&gt; direction of the entire n + -type GaN layer 93 and the n-type GaN layer 94 after the n-type GaN layer 94 is grown is, for example, about 5 μm. In the n + -type GaN layer 93 and the n-type GaN layer 94, a penetration row is formed in the upper portion of the stripe window 92a, and the illustration thereof is omitted. Next, the p + -type GaN layer 95 is grown on the n-type GaN layer 94 by MOCVD. The thickness of the ρ + -type GaN layer 95 is, for example, about 500 nm, and the impurity concentration is, for example, 1×10 19 cm −3 . Then, a portion of the p+ type GaN layer 95 which is a gate of a three-terminal element (transistor) to be described later is removed by etching. Next, the n-type GaN layer 96 and the AlGaN layer 97 are sequentially grown by the MOCVD method in a comprehensive manner. The thickness of the n-type GaN layer 96 is, for example, about 800 nm, and the impurity concentration is, for example, i&gt;&lt;i〇i7cm-3e The thickness of the AiGaN layer 97 is, for example, 30 nm, and the A1 composition is, for example, 0.25. Next, in order to form the three-terminal element (transistor) in an enhancement mode, the AlGaN layer 97 of the gate portion is removed by dry etching. Although a secondary electron gas is generated in the vicinity of the interface between the AlGaN layer 97 and the n-type GaN layer 96, but by removing the AlGaN layer 97 of the gate portion, the primary electron gas is not present in the gate portion, and by The energy band raising effect by the p + -type GaN layer 95 causes the n-type GaN layer 96 under the gate to be depleted. Next, after the insulating film, for example, a SiCh film having a thickness of 20 nm, is formed entirely by, for example, a plasma CVD method, the Si 2 film is patterned into a predetermined shape by photolithography and surname. Thus, an inter-electrode insulating film 98 composed of a S1 〇 2 film is formed on the -55 - 201230149 n-type (10) layer 96 of the gate portion. Next, the metal film is patterned into a predetermined shape by photolithography and etching, for example, by using a direct space basis: ", and then recording a metal film for forming a Schottky electrode." The film, for example, forms a Ni/Au two-layer film (the thickness of each film is 5 〇 nm for the first layer and 5 〇〇 nm for the first layer). Thus, the idle insulating film (10) The gate electrode 9 is formed thereon. Next, the n-type GaN layer 96 is patterned into a predetermined shape by photolithography and dry etching, so that the {) + type (5 layer 95 is partially exposed. Next, the growth mask is formed) The p + -type GaN layer 95 of the upper portion of the stripe window 92a of 92 is etched away. This is to separate the elements between the 2-terminal element and the 3-terminal element. Secondly, it is formed entirely by, for example, vacuum evaporation. After the ohmic metal film, the metal film is patterned into a regular shape by photolithography and etching. As the metal film, for example, a Ni/Au two-layer film is formed (the thickness of each film is, for example, the first layer The Ni film is 50 nm, the first layer of Au film 疋 5 〇〇 nm). In the 2-terminal element portion, an anode electrode 1 is formed on the p + -type GaN layer 95, and in the 3-terminal element portion, an ohmic electrode 1 is formed in a state where the p + -type GaN layer 95 is connected to the n-type GaN layer 96. Next, 'the metal film is patterned into a regular shape by photolithography and etching after the ohmic metal film is completely formed by, for example, vacuum evaporation. As the metal film, for example, a multilayer of Ti/Al/Au is formed. The film (the thickness of each film is 'for example, the Ti film is 5 nm, the A1 film is 45 nm, and the Au film is 1 〇 nm). Thus, in the 3-terminal element portion, the source is formed on the ohmic electrode 1 and the A1GaN layer 97. Electrode 102. The 3-terminal element is a vertical-type -56-201230149 趱Enhanced Insulated Gate FET. The '2-terminal element is pn-bonded. The 2-terminal and 3-terminal GaN-based composite semiconductor device 〇'^ The electrical failure is shown in Fig. 30. As shown in Fig. 30, on the circuit, the enhanced silver secret μ, the drain of the bar edge gate pg and the anode of the pn junction diode are connected together. The source electrode 102 of the gate FET and the contact portion of the p + -type GaN layer 95 become a diode. After that, in the same manner as in the seventh embodiment, the first support substrate 16 of the subordinate 15 is formed, followed by the peeling of the base substrate 91 and the subsequent formation of the metal second support substrate 18. For example, an A1N substrate is used for the substrate 16. On the main surface of the A1N substrate, in addition to the gate electrode 99 and the source electrode 102, a line in contact with the anode electrode 100 of the pn junction=polar body is formed, and a line is formed thereon. 1j - Au/Sri solder paste having a thickness of the left and right sides. As the second support substrate 18, for example, an N-type GaN layer 93 is exposed by peeling off the base 11 by using an Au-plated copper plate. Face. The above elements are formed into 2-terminal and 3-terminal GaN-based composite semiconductor elements. Further, the source electrode 丨02 and the anode electrode 一体 are integrally formed on the main surface of the A1N substrate which is the support substrate 16 of the first substrate. In this case, a representative unit circuit of the power circuit can be constructed by the 端2-terminal j·3 terminal GaN-based composite semiconductor element. According to the twelfth embodiment, the two-terminal, three-terminal GaN-based composite semiconductor π can be obtained in the same manner as in the seventh and seventh embodiments. [Third Embodiment] The method for producing a GaN-based semiconductor device according to the third embodiment is described in -57 to 201230149. In the first embodiment of the first embodiment, the same steps as in the seventh embodiment are carried out until the steps shown in Fig. 18B are performed. Next, as shown in FIG. 31, the first supporting substrate 16 on which the organic bonding layer 111 is formed on one main surface is prepared, and the organic bonding layer 111' of the first supporting substrate 16 is formed on the base substrate U. The first electrode 14 on the first surface 13a of the GaN-based semiconductor layer 13 is opposed to each other. As the organic based layer 111', for example, a thermoplastic resin can be used. Further, as the first support substrate 16, for example, an elemental semiconductor such as Si, a compound semiconductor such as SiC, GaAs, GaP, AIN, GaN, or ZnO, or various metals, alloys, nitride-based ceramics, or an oxide system can be used. Ceramics, diamonds, carbon, plastics, etc., should be selected according to needs. A typical example of the first support substrate 16 which can be mentioned is a Si substrate. Then, as shown in FIG. 31, the organic back layer 111 of the first support substrate 16 is pressed toward the first electrode 14 side of the GaN-based semiconductor layer 13 formed on the base substrate 11, so that the organic-based adhesive layer 111 is pressed. A gap is formed between the GaN-based semiconductor layers 13 . For example, in the case of using the organic binder layer 11 formed of a thermoplastic resin, the organic binder layer 111 can be wetted between the GaN-based semiconductor layers 13 by raising the temperature to the vicinity of the softening point of the resin. gap. As described above, as shown in Fig. 32, the first support substrate 16 is next to the first electrode 14 side formed on the first surface 13a of the GaN-based semiconductor layer 13 on the base substrate 11. Then, as shown in Fig. 3 3A, the base substrate 11 and the first support substrate 16 which are subsequently formed as described above are peeled off between the base substrate 11 and the GaN-based semiconductor layer 13. Specifically, for example, by ultrasonically stimulating the base substrate 1 1 and the first support substrate 16 which are one -58 to 201230149, the base substrate 11 and the GaN-based semiconductor layer 13 are peeled off. Alternatively, a mechanical force stimulus may be applied to a part of the end faces of the base substrate 11 and the first support substrate 16 which are integrated, and the base substrate 丨丨 and the QaN-based semiconductor layer 13 may be peeled off. Next, as shown in Fig. 33B, a necessary second electrode 17 is formed on the second surface 13b of the GaN-based semiconductor layer 13. The material of the second electrode 17 and the method of forming the second electrode 17 are selected as needed. The material of the second electrode 17 is appropriately selected depending on whether the second electrode 17 is an ohmic electrode or a Schottky electrode or a conductive type of the uppermost layer of the GaN-based semiconductor layer 13 to which the second electrode 17 is in contact. Specifically, the second electrode 17 is, for example, a multilayer film in which Ti/Al/Au is sequentially used, and the thickness of each film is, for example, a Ti film of 5 nm, an A1 film of 45 nm, and an Au film of l. 〇nm. In addition, the δ 第 second electrode 17 is formed by using a metal film or an alloy film for forming the second electrode 17 in a comprehensive manner by, for example, a vacuum distillation method or a sputtering method, and then using the metal film or the alloy film. Photolithography and etching are formed by patterning into a predetermined shape. In this case, since the organic back layer 111 is formed in the gap between the 〇aN-based semiconductor layers 13 , it is preferable that the metal film or the alloy film is not formed on the side surface of the semiconductor layer 13 , and the second electrode 17 is formed. Before the formation of the metal film or the alloy film, in order to clean the second surface 13b of the semiconductor layer 13, and to reduce the on-resistance in the vertical direction, dry etching or the like may be performed from the side of the second surface 13b. The thickness of the GaN-based semiconductor layer 13 is reduced. In FIG. 33B, the second electrode 17 is formed on the entire second surface 13b of the GaN-based semiconductor layer 13, but may be formed in a portion other than the peripheral portion of the second surface 13b of the GaN-based semiconductor layer 13, for example, -59 - 201230149 Such as the inner part of the edge of 6 μηι or more. In the case where the second electrode 17 is an ohmic electrode, the second electrode 17 is formed on the second surface 1 3 b of the Ga a bis-based semiconductor layer 13 as needed, and then the second electrode 17 is irradiated with laser light. The laser annealing is performed, whereby the second electrode 17 can be made to be in ohmic contact with a lower resistance with respect to the GaN-based semiconductor layer 13. For example, the second electrode 丨7 is composed of a multilayer metal film having a total thickness of 5 〇 nm composed of the Ti film, the A1 film, and the Au film described above, and the light energy is higher than the energy gap of GaN by 3 65 nm. The following pulsed laser light is applied to the second electrode 丨7, and the second electrode 17 can be made lower with respect to the GaN-based semiconductor layer 藉3 by instantaneously heating the GaN-based semiconductor layer 13 in contact with the second electrode 17 The resistance is ohmic contact. As a pulsed laser light having a wavelength of 365 nm or less, specifically, 'e' can use a THG (one frequency multiplier) pulsed laser light having a wavelength of 355 nm generated by a yag laser or a QHD (quadruple frequency) pulsed laser light having a wavelength of 266 nm. . Next, as shown in Fig. 34A, the metal layer 112 is formed on the surface on the side of the second electrode 17 by a vacuum evaporation method or a plating (plating) method. The occupancy of the metal layer 1 1 2 is selected as needed, for example, 3 to 3 〇 μ m. As the material of the metal layer 112, for example, Au or Cu or the like can be used. This metal layer 1 1 2 is used as a pad electrode. Next, in order to enable the GaN-based semiconductor layers 13 to be easily separated from each other in the subsequent steps, the metal layer n 2 is cut to form the trenches 3. The groove 丨 3 is formed for each or a plurality of GaN-based semiconductor layers 13 as needed. In Fig. 34A, grooves 113 are formed for every three GaN-based semiconductor layers 13. Next, as shown in Fig. 34B, the first support substrate 丨6 is peeled off by attaching the extension tape 1 1 4 ' to the side of the metal layer Π2. For example, in the case where the organic-based adhesive layer 1 i-60-201230149 is made of a thermoplastic resin, the ith support substrate 16 is removed from the metal in a state where the organic-based adhesive layer 11 1 is softened by heating. The layer 1 12 side is pulled apart, and the first support substrate 16 can be peeled off. Alternatively, if the organic binder layer 11 1 is solvent-soluble, the organic binder layer 11 1 is dissolved by immersing in a solvent to peel off the i-th support substrate i 6 . Thereafter, the core semiconductor layer 13 on which the first electrode 14 and the second electrode 17 are formed is peeled off from the extension tape 144. According to the above, a GaN-based semiconductor device in which three GaN-based semiconductor layers 13 are integrated can be manufactured. This GaN-based semiconductor element is, for example, a diode. The GaN-based dipole system pn junction diode or Schottky diode, in the pn junction diode, the ith electrode 14 and the second electrode 17 are both ohmic electrodes, and in the Schottky diode One of the electrode 14 and the second electrode 17 is a Schottky electrode, and the other is an ohmic electrode. According to the thirteenth embodiment, the same advantages as those of the seventh embodiment can be obtained. [Fourteenth embodiment] A method of manufacturing a GaN-based semiconductor device according to the fourteenth embodiment will be described. In the fourteenth embodiment, the same steps as in the seventh embodiment are carried out until the steps shown in Fig. 18B are performed. Next, as shown in FIG. 35, vacuum suction is performed on the first electrode 14 side by a vacuum pen, and the vacuum pen 1 1 5 is pulled away from the base substrate 1 1 to borrow from the base substrate. The GaN-based semiconductor layer 13 and the first electrode 14 are peeled off. Secondly, as shown in Figure 36, vacuum suction by π 5 vacuum suction -61 - 201230149

The GaN-based semiconductor layer 13 and the first electrode 14 are delivered to the other straight-hand pen 1 1 6 〇, and as shown in FIG. 37, the GaN-based semiconductor layer 13 and the first vacuum are vacuum-adsorbed by the vacuum pen 1 16 The electrode 14 is transferred and then formed on the organic adhesive layer ill formed on one main surface of the first support substrate 16. The interval between the GaN-based semiconductor layers 13 is selected as needed, and is, for example, about several μm to several Ομπι. Then, as shown in FIG. 38A, an insulating film such as a Si〇2 film is formed by a CVD method or the like by covering the GaN-based semiconductor layer 13, and then the insulating film is opposed to the first supporting substrate 1 by, for example, RIE. The surface of the GaN-based semiconductor layer 13 is formed with a sidewall spacer 1 17 formed of an insulator. Then, as shown in FIG. 3B, the second surface 13b side of the GaN-based semiconductor layer 13 is vacuum-adsorbed and transferred by the vacuum pen 11 5, and then the organic system formed on one main surface of the second support substrate 18 is followed by The layer 11 8 is provided with a plurality of GaN-based semiconductor layers 13 . In this case, the GaN-based semiconductor layers 13 are disposed in close contact with each other via the sidewall spacers 1 1 7 formed on the side faces thereof. Next, as shown in Fig. 39A, a necessary second electrode 17 is formed on the second surface 13b of the GaN-based semiconductor layer 13. The material of the second electrode 177 and the method of forming the second electrode 17 are selected as needed. The material of the second electrode 17 is suitably selected depending on whether the second electrode 丨7 is an ohmic electrode or a Schottky electrode or a conductive type of the uppermost layer of the GaN-based semiconductor layer 13 to which the second electrode 17 is in contact. Specifically, the second electrode 17 is, for example, a multilayer film in which Ti/Al/Au is sequentially used, and the thickness of each film is -62 to 201230149. For example, the Τ1 film is 5 nm, and the A1 film is 45 nm. The Au film is i〇nm. In addition, the second electrode 17 is formed by using a metal film or an alloy film for forming the second electrode 17 in a comprehensive manner by, for example, a vacuum deposition method or a sputtering method, and then using the metal film or the alloy film. The lithography and the etching method are formed by patterning into a predetermined shape. In this case, the side wall spacer layer 17 is formed by the gap between the GaN-based semiconductor layers 13, and the metal film or the alloy film is not formed on the side surface of the GaN-based semiconductor layer 13. Preferably, before the formation of the metal ruthenium or alloy film for forming the second electrode 17, the second surface 13b of the GaN-based semiconductor layer 13 is cleaned, and the vertical on-resistance is further reduced. The thickness of the GaN-based semiconductor layer 13 is reduced by dry button etching on the two sides 1 3b side. In FIG. 39A, the second electrode 17 is formed on the entire second surface 13b of the GaN-based semiconductor layer 13, but may be formed in a portion other than the peripheral portion of the second surface 13b of the GaN-based semiconductor layer 13, for example, The part is separated from the inside by more than 6μηι. When the second electrode 17 is an ohmic electrode, the second electrode 17 is formed on the second surface nb of the GaN-based semiconductor layer 13 as needed, and the second electrode 17 is irradiated with laser light to perform laser annealing. The second electrode 17 is made to be in ohmic contact with a lower resistance with respect to the GaN-based semiconductor layer 丨3. For example, the second electrode 17 is composed of a multilayer metal crucible having a total thickness of 5 〇 nm composed of the Ti film, the A1 film, and the Au film described above, and has a light energy higher than a wavelength of GaN of GaN of 365 nm or less. The pulsed laser light is irradiated onto the second electrode 17, and the GaN-based semiconductor layer 丨3' which is in contact with the second electrode 17 is instantaneously heated, whereby the second electrode 丨7 can be made ohmic with a lower resistance with respect to the GaN-based semiconductor layer 13. contact. As the pulsed laser light having a wavelength of 365 nm or less, specifically, for example, a THG (triple frequency multiplier) pulse of a wavelength of 35 5 nm generated by a YAG laser can be used, or a QHD of a wavelength of 266 nm (four times Frequency) pulsed laser light. Next, as shown in Fig. 39B, the metal layer 112 is formed on the surface on the side of the second electrode 17 by a vacuum evaporation method or an electric ore (mineralization) method. The thickness of the metal layer 112 is selected as needed, and is, for example, 3 to 3 μm. As the material of the metal layer 112, for example, au or Cu or the like can be used. This metal layer 1 1 2 is used as a pad electrode. Next, as shown in Fig. 40A, in order to allow the GaN-based semiconductor layers 13 to be easily separated from each other in the subsequent step, the metal layer n 2 is cut to form the trenches 1 1 3 . The trenches 1 1 3 are formed for each or a plurality of GaN-based semiconductor layers 13 as needed. In Fig. 40A, a groove 11 3 is formed for each GaN-based semiconductor layer 13. As shown in Fig. 4B, the second support substrate 18 is peeled off by attaching the extension tape 1 1 4 ' to the metal layer 1 1 2 side. For example, in the case where the organic-based adhesive layer 1 18 is made of a thermoplastic resin, the second support substrate 8 is removed from the metal layer 112 in a state where the organic-based adhesive layer 1 18 is softened by heating. When the side is pulled apart, the second support substrate 18 can be peeled off. Alternatively, if the organic binder layer 1 18 is solvent-soluble, the organic binder layer 1 18 is dissolved by immersion in a solvent to peel off the second support substrate 8 . Thereafter, the GaN-based semiconductor layer 13 on which the first electrode 14 and the second electrode 17 are formed is peeled off from the extension tape 1 1 4 . A GaN-based semiconductor device using one GaN-based semiconductor layer 丨3 can be manufactured by the above. The GaN-based semiconductor device is, for example, a diode. The GaN-based dipole system pn junction diode or Schottky diode 'in the pn junction diode, the first electrode 丨4 and the second electrode 17 are both ohmic electrodes' in the Schottky diode 1 electrode 14 and second electrode π -64 - 201230149 One is a Schottky electrode, and the other is an ohmic electrode. According to the fourth embodiment, the same advantages as in the seventh embodiment can be obtained. ‘ Above, although P 4丄

Although the embodiment of the present invention has been specifically described, the present invention is not subject to the eye I; the above embodiment can be variously modified based on the technical idea of the present invention.数值 数值 数值 数值 数值 数值 上述 数值 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Further, any two or more of the first to fourteenth embodiments may be combined as needed. Further, in the first embodiment, for example, the organic back layer in may be formed on the main surface of the first support substrate 16, and the step may be changed to the state shown in FIG. The surface of the first electrode 14 is coated with an organic back layer 11 1 by a spin coating method or the like. In this case, the first support substrate 16 is pressed against the organic adhesive layer 1 1 1 , and the organic adhesive layer 丨u is cured by ultraviolet irradiation curing (ultraviolet curing). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a method of manufacturing a GaN-based semiconductor device according to a first embodiment of the present invention. Fig. 2 is a plan view showing an example of a growth mask used in the method of manufacturing a GaN-based semiconductor device according to the first embodiment of the present invention. Fig. 3 is a plan view showing another example of the growth mask used in the method of manufacturing the GaN-based semiconductor device according to the first embodiment of the present invention. Fig. 4 is a schematic diagram showing a second method for preventing the GaN-based semiconductor layers from being combined with each other in the method of manufacturing a GaN-based semiconductor device according to the first embodiment of the present invention. Fig. 5 is a schematic diagram for explaining a third method for preventing a GaN-based semiconductor layer from being combined with each other in the method of manufacturing a GaN-based semiconductor device according to the first embodiment of the present invention. Fig. 6 is a schematic diagram for explaining a third method for preventing GaN-based semiconductor layers from being combined with each other in the method of manufacturing a GaN-based semiconductor device according to the first embodiment of the present invention. Figure 7 is a diagram for explaining the present invention! In the method of manufacturing a GaN-based semiconductor device of the embodiment, a schematic diagram of a fourth method for preventing the GaN-based semiconductor layers from being combined with each other is shown. Fig. 8 is a photograph showing a scanning electron microscope image of the surface of a GaN-based semiconductor layer grown using the growth mask shown in Fig. 2 in the method of manufacturing a GaN-based semiconductor device according to the first embodiment of the present invention. Fig. 9 is a photograph showing a scanning electron microscope image of the surface of a GaN-based semiconductor layer grown using a growth mask in which an auxiliary stripe window is not formed. Fig. 10 is a plan view showing a growth mask formed by measuring a change in the lateral growth amount of the angle formed by the longitudinal direction of the stripe window grown in the GaN (Ol) plane and the angle of the &lt;11-20&gt; direction. Fig. 1 is a schematic line diagram showing changes in the lateral growth amount at an angle formed by the longitudinal direction of the fringe window grown in the GaN (000 1) plane and the angle of the &lt;11-20&gt; direction. Fig. 1 is a cross-sectional view for explaining a method of manufacturing the 〇aN Schottky diode according to the second embodiment of the present invention. Fig. 13 is a cross-sectional view for explaining a method of manufacturing a GaN-based Schottky 201230149 base diode according to a second embodiment of the present invention. Fig. 14 is a plan view showing a method of manufacturing a GaN-based Schottky diode according to a second embodiment of the present invention. Fig. 15 is a cross-sectional view showing a method of manufacturing a GaN-based Schottky diode according to a third embodiment of the present invention. Fig. 16 is a cross-sectional view showing a method of manufacturing a GaN-based Schottky diode according to a fourth embodiment of the present invention. Fig. 17 is a cross-sectional view showing a method of manufacturing a GaN-based MISFET according to a fifth embodiment of the present invention. Fig. 18 is a cross-sectional view for explaining a method of manufacturing a GaN-based semiconductor device according to a seventh embodiment of the present invention. Fig. 19 is a cross-sectional view showing a method of manufacturing a GaN-based semiconductor device according to a seventh embodiment of the present invention. Fig. 2 is a cross-sectional view showing a method of manufacturing a GaN-based semiconductor device according to a seventh embodiment of the present invention. Fig. 2 is a plan view showing a method of manufacturing a GaN-based semiconductor device according to a seventh embodiment of the present invention. Figure 22 is a cross-sectional view showing a method of manufacturing a GaN-based semiconductor device according to a seventh embodiment of the present invention. Fig. 23 is a perspective view showing a method of manufacturing a GaN-based semiconductor device according to a seventh embodiment of the present invention. Fig. 24 is a photograph showing a scanning electron microscope image of the surface of the GaN-based semiconductor layer peeled off from the base substrate in the method for producing a GaN-based semiconductor device according to the seventh embodiment of the present invention. Fig. 25 is a photograph showing the substitution of the scanning type of the GaN-based semiconductor layer shown in Fig. 24 and the center portion of -67-201230149; Fig. 2 6 is a cross-sectional view showing the manufacturing method of the GaN-based Schottky-polar body of the singularity of the singularity of the singularity of the singer. Fig. 27 is a plan view showing a method of manufacturing a large-area power GaN Schottky diode according to a ninth embodiment of the present invention. Figure 28 is a cross-sectional view for explaining a method of manufacturing a light-emitting diode according to a second embodiment of the present invention. Figure 29 is a cross-sectional view showing a method of manufacturing a two-terminal, three-terminal GaN-based composite semiconductor device according to a twelfth embodiment of the present invention. Fig. 30 is a schematic diagram showing an equivalent circuit of a two-terminal and three-terminal GaN-based composite semiconductor element shown in Fig. 29. Figure 3 is a cross-sectional view for explaining a method of manufacturing a semiconductor device according to a third embodiment of the present invention. Figure 3 is a cross-sectional view for explaining a method of manufacturing a semiconductor device according to a third embodiment of the present invention. Figure 3 is a cross-sectional view for explaining a method of manufacturing a semiconductor device according to a third embodiment of the present invention. Figure 3 is a cross-sectional view for explaining a method of manufacturing a semiconductor device according to a third embodiment of the present invention. Fig. 3 is a cross-sectional view for explaining a method of manufacturing a semiconductor device according to a fourteenth embodiment of the present invention. Figure 3 is a cross-sectional view for explaining a method of manufacturing a semiconductor device according to a fourteenth embodiment of the present invention. Fig. 3 is a cross-sectional view for explaining a method of manufacturing a semiconductor device according to a fourteenth embodiment of the present invention. -68-201230149 Fig. 3 is a cross-sectional view for explaining a method of manufacturing a semiconductor device according to a fourteenth embodiment of the present invention. Fig. 3 is a cross-sectional view showing a method of manufacturing a semiconductor device according to a fourteenth embodiment of the present invention. Figure 40 is a cross-sectional view showing a method of manufacturing a semiconductor device according to a fourteenth embodiment of the present invention. [Description of main component symbols] 11, 21, 31, 41, 51, base substrate 81, 91 12, 22, 32, 42, 52, growth mask 71, 82' 92 12a, 22a, 32a, 42a, 52a, 71a '82a, 92a 12b 12c 13 14 15 16 17 18 111, 118 114 115, 116 Stripe window auxiliary stripe window mask GaN-based semiconductor layer first electrode followed by metal first support substrate second electrode second support substrate organic system Next layer extension tape vacuum pen side wall isolation layer -69- 117

Claims (1)

201230149 VII. Patent application scope: 1. A semiconductor device characterized in that: a substrate composed of a substance different from a GaN-based semiconductor is directly or indirectly provided on the substrate and has - or a plurality of stripe-shaped openings a growth mask and one or a plurality of island-shaped GaN-based semiconductor layers grown on the substrate in the azimuth direction of the substrate using the growth mask, wherein the stripe-shaped opening of the growth mask is It extends parallel to the direction of the &lt;ι_10〇&gt; direction of the GaN-based semiconductor layer. 2. The semiconductor element according to claim 1, wherein the side surface of the GaN-based semiconductor layer is a (1-Ι0α) plane (01 is an arbitrary integer) and a (11-2β) plane (β is Any of the integers) or the crystallographically equivalent surface, or the side surface of the (10)-based semiconductor layer (1-1) (€1 is an arbitrary integer). The semiconductor device of the second aspect of the invention, wherein the growth mask has an i-th direction parallel to the &lt;11-20&gt; direction of the GaN-based semiconductor layer and a &lt;1_100&gt; direction parallel to the GaN-based semiconductor layer The second direction is arranged in a periodic manner in the first period and the second period, and a plurality of stripe-shaped openings extending in the second direction; and a stripe shape adjacent to each other in the first direction The bisector of the region between the openings is overlapped with the stripe-shaped opening adjacent to the second direction, and the end portions of the strip-shaped openings are overlapped by a predetermined stripe Opening. -70- 201230149 4. The semiconductor device according to the second aspect of the invention, wherein the growth mask has a mean wavelength in the &lt;11-20&gt; direction of the GaN-based semiconductor layer, and is parallel to the GaN-based semiconductor layer. a plurality of stripe-shaped openings extending in the second direction of the direction; and the same period as the stripe-shaped opening in the first direction, and the stripe-shaped opening is shifted by a half period a plurality of stripe-shaped openings extending in the second direction in a predetermined distance from the end portion of the stripe-shaped opening in the second direction. 5. The semiconductor device according to claim 3 or 4, wherein the above The GaN-based semiconductor layer is composed of two or more layers including at least one of an n-type layer, an 'undoped layer, and a Ρ-type layer. 6. A method of manufacturing a semiconductor device, characterized in that: a step of forming a growth mask having a plurality of stripe-shaped openings directly or indirectly on a base of a substance of a GaN-based semiconductor; and using the growth mask to form a plurality of island-shaped _ series Semiconductor 2: the surface orientation of the substrate on the (. 01) plane, and the &lt;1-1 〇〇&gt; direction of the (4) body layer is parallel to ^u, . ^ ^, the stripe shape of the growth mask described above The method of manufacturing a semiconductor device according to the sixth aspect of the invention, wherein the growth mask has a thickness in a direction of &lt;11-20&gt; parallel to the GaN-based layer. The second direction of the direction of the GaN-based semiconductor layer is periodically arranged in the i-th cycle and the second -71 - 201230149 cycle, and is plural in the second direction. a stripe-shaped opening; and the stripe-shaped line on a bisector of a region between the stripe-shaped openings adjacent to each other in the first direction, and a pair of adjacent pairs in the second direction The end portions of the openings facing each other overlap the auxiliary stripe-shaped openings provided at a predetermined distance. 8. The method of manufacturing a semiconductor device according to claim 6, wherein the growth mask has a periodic arrangement in a direction parallel to the &lt;11-20&gt; direction of the GaN-based semiconductor layer and is parallel to a plurality of stripe-shaped openings extending in the second direction of the direction of the GaN-based semiconductor layer; and periodically arranging the stripe-shaped openings in a half cycle at the same period as the stripe-shaped openings in the second direction And a plurality of stripe-shaped openings extending in the second direction in a predetermined distance from the end portion of the stripe-shaped opening in the second direction. 9. The method of manufacturing a semiconductor device according to claim 6, further comprising: after the (10)-based semiconductor layer is grown on the substrate, the first support substrate is followed by the upper surface side of the GaN-based semiconductor layer. The step of peeling the first support substrate and the semiconductor layer from the substrate. 10. The method of manufacturing a semiconductor device according to claim 9, wherein the step of growing the GaN-based semiconductor layer on the substrate is performed after the j-th support substrate is on the upper surface side of the _-type semiconductor layer Previously, the step of growing at least a portion of the matte is removed. -72- 201230149 Please refer to the manufacturer of the semiconductor device of the sixth item of interest. After the board, the GaN-based semiconductor layer is grown on the base A moxibustion, and a plurality of brothers 1 are formed on the GaN-based semiconductor layer. a step of the electrode; a step of removing at least a portion of the upper seventh, e at least after the first electrode; and f removing the GaN-based semiconductor layer of the growth mask at least a portion of the growth mask a step of disposing the upper surface of the first electrode, a step of separating the organic bonding layer from the first supporting substrate, and a step of separating the first supporting substrate and the GaN-based substrate; a step of forming one or a plurality of second electrodes on a surface on which the GaN-based semiconductor layer is exposed from the first support substrate and the above-mentioned semiconductor layer of the above-mentioned one of the first support substrate and the semiconductor layer; and a first electrode and a half-guide The step of peeling off the first support substrate from the above-described "secondary conductor layer" of the second electrode. (2) A method for producing a semiconductor device, comprising: π: forming the GaN-based semiconductor layer on the substrate, and forming a plurality of first steps on the upper surface of the GaN-based semiconductor layer; The first! After the electrode, removing at least a portion of the growth mask; after removing at least a portion of the growth mask, the GaN-based semiconductor layer forming the first electrode is stripped from the substrate - 73 - 201230149; After the _-type semiconductor layer of the first electrode, the first electrode side of the upper germanium GaN-based semiconductor layer forming the first electrode is formed toward the first organic layer formed on one main surface of the second support substrate. a step of layer pressing and subsequent steps. a step of forming a sidewall spacer formed of an insulator on a side surface of the GaN-based semiconductor layer; and forming the GaN-based semiconductor layer on the side surface of the sidewall spacer by vacuum adsorption from the λ support substrate After the peeling, a plurality of the GaN-based conductors formed on one main surface of the second support substrate are in a state in which a plurality of the GaN-based conductors are adjacent to each other via the side separation layer; The second organic via layer of the second support substrate is followed by a plurality of surfaces exposing the GaN-based semiconductor layer to form one or a plurality of second electrodes And a step of separating the GaN-based semiconductor layer forming the first electrode and the second electrode from the second support substrate. '-74-