JP2019536255A5 - - Google Patents

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Publication number
JP2019536255A5
JP2019536255A5 JP2018504672A JP2018504672A JP2019536255A5 JP 2019536255 A5 JP2019536255 A5 JP 2019536255A5 JP 2018504672 A JP2018504672 A JP 2018504672A JP 2018504672 A JP2018504672 A JP 2018504672A JP 2019536255 A5 JP2019536255 A5 JP 2019536255A5
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JP
Japan
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gate insulating
insulating layer
channel region
projection
layer
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JP2018504672A
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Japanese (ja)
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JP2019536255A (ja
JP7045983B2 (ja
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Priority claimed from CN201611082799.9A external-priority patent/CN108122759B/zh
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JP2018504672A 2016-11-30 2017-06-30 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示装置 Active JP7045983B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201611082799.9A CN108122759B (zh) 2016-11-30 2016-11-30 薄膜晶体管及其制作方法、阵列基板及显示装置
CN201611082799.9 2016-11-30
PCT/CN2017/091081 WO2018099066A1 (en) 2016-11-30 2017-06-30 Method of fabricating thin film transistor, thin film transistor, and display apparatus

Publications (3)

Publication Number Publication Date
JP2019536255A JP2019536255A (ja) 2019-12-12
JP2019536255A5 true JP2019536255A5 (enExample) 2020-06-18
JP7045983B2 JP7045983B2 (ja) 2022-04-01

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JP2018504672A Active JP7045983B2 (ja) 2016-11-30 2017-06-30 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示装置

Country Status (6)

Country Link
US (1) US10431668B2 (enExample)
EP (1) EP3549157A4 (enExample)
JP (1) JP7045983B2 (enExample)
KR (1) KR102103428B1 (enExample)
CN (1) CN108122759B (enExample)
WO (1) WO2018099066A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109860107B (zh) * 2019-01-31 2021-03-16 武汉华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN110265303B (zh) * 2019-06-12 2021-04-02 深圳市华星光电半导体显示技术有限公司 一种显示面板的制作方法
CN110299322B (zh) * 2019-07-03 2022-03-08 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN113972236B (zh) * 2020-07-23 2024-12-10 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167372A (ja) * 1984-02-09 1985-08-30 Seiko Epson Corp 薄膜トランジスタの製造方法
KR970006254B1 (ko) * 1994-03-18 1997-04-25 엘지전자 주식회사 박막트랜지스터의 제조방법
JPH0888363A (ja) * 1994-09-16 1996-04-02 Fujitsu Ltd 半導体装置及びその製造方法
US6278130B1 (en) * 1998-05-08 2001-08-21 Seung-Ki Joo Liquid crystal display and fabricating method thereof
KR20060000508A (ko) * 2004-06-29 2006-01-06 네오폴리((주)) 보호막을 이용한 금속유도측면 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법
JP5127183B2 (ja) * 2006-08-23 2013-01-23 キヤノン株式会社 アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法
JP5512144B2 (ja) * 2009-02-12 2014-06-04 富士フイルム株式会社 薄膜トランジスタ及びその製造方法
JP5604938B2 (ja) * 2010-03-31 2014-10-15 凸版印刷株式会社 薄膜トランジスタ及びその製造方法
TWI475615B (zh) 2010-07-21 2015-03-01 Univ Nat Chiao Tung 自我對準之頂閘極薄膜電晶體及其製法
JP2012160679A (ja) * 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器
GB2489682B (en) * 2011-03-30 2015-11-04 Pragmatic Printing Ltd Electronic device and its method of manufacture
GB2492442B (en) 2011-06-27 2015-11-04 Pragmatic Printing Ltd Transistor and its method of manufacture
US8952377B2 (en) * 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8569121B2 (en) * 2011-11-01 2013-10-29 International Business Machines Corporation Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
TW201322341A (zh) * 2011-11-21 2013-06-01 Ind Tech Res Inst 半導體元件以及其製造方法
CN102522337B (zh) * 2011-12-16 2014-07-02 北京大学 一种顶栅氧化锌薄膜晶体管的制备方法
JP6168795B2 (ja) * 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103346089B (zh) 2013-06-13 2016-10-26 北京大学深圳研究生院 一种自对准双层沟道金属氧化物薄膜晶体管及其制作方法
CN103730514B (zh) 2014-01-23 2019-07-19 苏州大学 薄膜晶体管
KR102511325B1 (ko) * 2014-04-18 2023-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 동작 방법
KR102424445B1 (ko) * 2016-05-03 2022-07-22 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN106024608B (zh) 2016-05-26 2019-04-02 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、衬底基板及显示装置
CN106128963B (zh) * 2016-09-23 2019-07-23 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板

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