CN108122759B - 薄膜晶体管及其制作方法、阵列基板及显示装置 - Google Patents

薄膜晶体管及其制作方法、阵列基板及显示装置 Download PDF

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CN108122759B
CN108122759B CN201611082799.9A CN201611082799A CN108122759B CN 108122759 B CN108122759 B CN 108122759B CN 201611082799 A CN201611082799 A CN 201611082799A CN 108122759 B CN108122759 B CN 108122759B
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gate insulating
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CN108122759A (zh
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宋振
李伟
王国英
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BOE Technology Group Co Ltd
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Priority to CN201611082799.9A priority Critical patent/CN108122759B/zh
Priority to JP2018504672A priority patent/JP7045983B2/ja
Priority to US15/741,741 priority patent/US10431668B2/en
Priority to KR1020187002481A priority patent/KR102103428B1/ko
Priority to PCT/CN2017/091081 priority patent/WO2018099066A1/en
Priority to EP17828831.2A priority patent/EP3549157A4/en
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D30/67—Thin-film transistors [TFT]
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201611082799.9A 2016-11-30 2016-11-30 薄膜晶体管及其制作方法、阵列基板及显示装置 Expired - Fee Related CN108122759B (zh)

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Application Number Priority Date Filing Date Title
CN201611082799.9A CN108122759B (zh) 2016-11-30 2016-11-30 薄膜晶体管及其制作方法、阵列基板及显示装置
JP2018504672A JP7045983B2 (ja) 2016-11-30 2017-06-30 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示装置
US15/741,741 US10431668B2 (en) 2016-11-30 2017-06-30 Method of fabricating thin film transistor, thin film transistor, and display apparatus
KR1020187002481A KR102103428B1 (ko) 2016-11-30 2017-06-30 박막 트랜지스터를 제조하는 방법, 박막 트랜지스터 및 디스플레이 장치
PCT/CN2017/091081 WO2018099066A1 (en) 2016-11-30 2017-06-30 Method of fabricating thin film transistor, thin film transistor, and display apparatus
EP17828831.2A EP3549157A4 (en) 2016-11-30 2017-06-30 METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND DISPLAY APPARATUS

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CN108122759B true CN108122759B (zh) 2021-01-26

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Publication number Priority date Publication date Assignee Title
CN109860107B (zh) * 2019-01-31 2021-03-16 武汉华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN110265303B (zh) * 2019-06-12 2021-04-02 深圳市华星光电半导体显示技术有限公司 一种显示面板的制作方法
CN110299322B (zh) * 2019-07-03 2022-03-08 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN113972236B (zh) * 2020-07-23 2024-12-10 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167372A (ja) * 1984-02-09 1985-08-30 Seiko Epson Corp 薄膜トランジスタの製造方法
KR970006254B1 (ko) * 1994-03-18 1997-04-25 엘지전자 주식회사 박막트랜지스터의 제조방법
JPH0888363A (ja) * 1994-09-16 1996-04-02 Fujitsu Ltd 半導体装置及びその製造方法
US6278130B1 (en) * 1998-05-08 2001-08-21 Seung-Ki Joo Liquid crystal display and fabricating method thereof
KR20060000508A (ko) * 2004-06-29 2006-01-06 네오폴리((주)) 보호막을 이용한 금속유도측면 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법
JP5127183B2 (ja) * 2006-08-23 2013-01-23 キヤノン株式会社 アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法
JP5512144B2 (ja) * 2009-02-12 2014-06-04 富士フイルム株式会社 薄膜トランジスタ及びその製造方法
JP5604938B2 (ja) * 2010-03-31 2014-10-15 凸版印刷株式会社 薄膜トランジスタ及びその製造方法
TWI475615B (zh) 2010-07-21 2015-03-01 Univ Nat Chiao Tung 自我對準之頂閘極薄膜電晶體及其製法
JP2012160679A (ja) * 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器
GB2489682B (en) * 2011-03-30 2015-11-04 Pragmatic Printing Ltd Electronic device and its method of manufacture
GB2492442B (en) 2011-06-27 2015-11-04 Pragmatic Printing Ltd Transistor and its method of manufacture
US8952377B2 (en) * 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8569121B2 (en) * 2011-11-01 2013-10-29 International Business Machines Corporation Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
TW201322341A (zh) * 2011-11-21 2013-06-01 Ind Tech Res Inst 半導體元件以及其製造方法
CN102522337B (zh) * 2011-12-16 2014-07-02 北京大学 一种顶栅氧化锌薄膜晶体管的制备方法
JP6168795B2 (ja) * 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103346089B (zh) 2013-06-13 2016-10-26 北京大学深圳研究生院 一种自对准双层沟道金属氧化物薄膜晶体管及其制作方法
CN103730514B (zh) 2014-01-23 2019-07-19 苏州大学 薄膜晶体管
KR102511325B1 (ko) * 2014-04-18 2023-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 동작 방법
KR102424445B1 (ko) * 2016-05-03 2022-07-22 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN106024608B (zh) 2016-05-26 2019-04-02 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、衬底基板及显示装置
CN106128963B (zh) * 2016-09-23 2019-07-23 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板

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KR102103428B1 (ko) 2020-04-23
JP2019536255A (ja) 2019-12-12
JP7045983B2 (ja) 2022-04-01
EP3549157A1 (en) 2019-10-09
WO2018099066A1 (en) 2018-06-07
US20190081159A1 (en) 2019-03-14
US10431668B2 (en) 2019-10-01
EP3549157A4 (en) 2020-06-24
KR20180086405A (ko) 2018-07-31
CN108122759A (zh) 2018-06-05

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Granted publication date: 20210126