JP7045983B2 - 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示装置 - Google Patents

薄膜トランジスタの製造方法、薄膜トランジスタ及び表示装置 Download PDF

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JP7045983B2
JP7045983B2 JP2018504672A JP2018504672A JP7045983B2 JP 7045983 B2 JP7045983 B2 JP 7045983B2 JP 2018504672 A JP2018504672 A JP 2018504672A JP 2018504672 A JP2018504672 A JP 2018504672A JP 7045983 B2 JP7045983 B2 JP 7045983B2
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layer
gate insulating
insulating layer
base substrate
channel region
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JP2019536255A (ja
JP2019536255A5 (enExample
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ゼン・ソン
ウェイ・リ
グオイン・ワン
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BOE Technology Group Co Ltd
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2018504672A 2016-11-30 2017-06-30 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示装置 Active JP7045983B2 (ja)

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CN201611082799.9A CN108122759B (zh) 2016-11-30 2016-11-30 薄膜晶体管及其制作方法、阵列基板及显示装置
CN201611082799.9 2016-11-30
PCT/CN2017/091081 WO2018099066A1 (en) 2016-11-30 2017-06-30 Method of fabricating thin film transistor, thin film transistor, and display apparatus

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Publication number Priority date Publication date Assignee Title
CN109860107B (zh) * 2019-01-31 2021-03-16 武汉华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN110265303B (zh) * 2019-06-12 2021-04-02 深圳市华星光电半导体显示技术有限公司 一种显示面板的制作方法
CN110299322B (zh) * 2019-07-03 2022-03-08 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN113972236B (zh) * 2020-07-23 2024-12-10 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置

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JP2010186861A (ja) 2009-02-12 2010-08-26 Fujifilm Corp 薄膜トランジスタ及びその製造方法
JP2011216603A (ja) 2010-03-31 2011-10-27 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法
JP2012160679A (ja) 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器
US20140191331A1 (en) 2011-06-27 2014-07-10 Pragmatic Printing Ltd Transistor and Its Method of Manufacture
JP2015195384A (ja) 2011-07-08 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
JP2015228014A (ja) 2014-04-18 2015-12-17 株式会社半導体エネルギー研究所 表示装置および、その動作方法

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Publication number Priority date Publication date Assignee Title
JP2010186861A (ja) 2009-02-12 2010-08-26 Fujifilm Corp 薄膜トランジスタ及びその製造方法
JP2011216603A (ja) 2010-03-31 2011-10-27 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法
JP2012160679A (ja) 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器
US20140191331A1 (en) 2011-06-27 2014-07-10 Pragmatic Printing Ltd Transistor and Its Method of Manufacture
JP2015195384A (ja) 2011-07-08 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
JP2015228014A (ja) 2014-04-18 2015-12-17 株式会社半導体エネルギー研究所 表示装置および、その動作方法

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JP2019536255A (ja) 2019-12-12
EP3549157A1 (en) 2019-10-09
WO2018099066A1 (en) 2018-06-07
US20190081159A1 (en) 2019-03-14
US10431668B2 (en) 2019-10-01
EP3549157A4 (en) 2020-06-24
CN108122759B (zh) 2021-01-26
KR20180086405A (ko) 2018-07-31
CN108122759A (zh) 2018-06-05

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