JP2019532494A5 - - Google Patents
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- JP2019532494A5 JP2019532494A5 JP2019510894A JP2019510894A JP2019532494A5 JP 2019532494 A5 JP2019532494 A5 JP 2019532494A5 JP 2019510894 A JP2019510894 A JP 2019510894A JP 2019510894 A JP2019510894 A JP 2019510894A JP 2019532494 A5 JP2019532494 A5 JP 2019532494A5
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- JP
- Japan
- Prior art keywords
- semiconductor material
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 claims 51
- 239000004065 semiconductor Substances 0.000 claims 51
- 238000000034 method Methods 0.000 claims 25
- 238000000137 annealing Methods 0.000 claims 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- 239000011787 zinc oxide Substances 0.000 claims 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- 229910003437 indium oxide Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 238000010276 construction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1614342.2 | 2016-08-22 | ||
| GBGB1614342.2A GB201614342D0 (en) | 2016-08-22 | 2016-08-22 | An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display |
| GB1700800.4 | 2017-01-17 | ||
| GB1700800.4A GB2553162B (en) | 2016-08-22 | 2017-01-17 | An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display |
| PCT/GB2017/052423 WO2018037211A1 (en) | 2016-08-22 | 2017-08-16 | An apparatus for annealing a layer of semiconductor material, a method of annealing a layer of semiconductor material, and a flat panel display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019532494A JP2019532494A (ja) | 2019-11-07 |
| JP2019532494A5 true JP2019532494A5 (enExample) | 2020-09-03 |
Family
ID=57045609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019510894A Withdrawn JP2019532494A (ja) | 2016-08-22 | 2017-08-16 | 半導体材料の層をアニール処理するための装置、半導体材料の層をアニール処理する方法およびフラットパネルディスプレイ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20190181009A1 (enExample) |
| EP (1) | EP3501034A1 (enExample) |
| JP (1) | JP2019532494A (enExample) |
| KR (1) | KR20190040036A (enExample) |
| CN (1) | CN109643644A (enExample) |
| GB (2) | GB201614342D0 (enExample) |
| TW (1) | TWI765905B (enExample) |
| WO (1) | WO2018037211A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11384425B2 (en) * | 2017-07-13 | 2022-07-12 | Purdue Research Foundation | Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom |
| JPWO2019021820A1 (ja) * | 2017-07-26 | 2020-08-06 | エンゼルプレイングカード株式会社 | 遊技用代用貨幣、遊技用代用貨幣の製造方法、及び検査システム |
| CN116635978A (zh) | 2021-10-30 | 2023-08-22 | 长江存储科技有限责任公司 | 用于半导体器件中的半导体层的热处理的方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3477969B2 (ja) * | 1996-01-12 | 2003-12-10 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法及び液晶表示装置 |
| JP2000111950A (ja) * | 1998-10-06 | 2000-04-21 | Toshiba Corp | 多結晶シリコンの製造方法 |
| US6451631B1 (en) * | 2000-08-10 | 2002-09-17 | Hitachi America, Ltd. | Thin film crystal growth by laser annealing |
| JP3903761B2 (ja) * | 2001-10-10 | 2007-04-11 | 株式会社日立製作所 | レ−ザアニ−ル方法およびレ−ザアニ−ル装置 |
| EP1478970A1 (en) * | 2002-02-25 | 2004-11-24 | Orbotech Ltd. | Method for manufacturing flat panel display substrates |
| JP2005191173A (ja) * | 2003-12-25 | 2005-07-14 | Hitachi Ltd | 表示装置及びその製造方法 |
| JP4838982B2 (ja) * | 2004-01-30 | 2011-12-14 | 株式会社 日立ディスプレイズ | レーザアニール方法およびレーザアニール装置 |
| US7199397B2 (en) * | 2004-05-05 | 2007-04-03 | Au Optronics Corporation | AMOLED circuit layout |
| JP2006135192A (ja) * | 2004-11-08 | 2006-05-25 | Sharp Corp | 半導体デバイスの製造方法と製造装置 |
| JP2007214527A (ja) * | 2006-01-13 | 2007-08-23 | Ihi Corp | レーザアニール方法およびレーザアニール装置 |
| JP5030524B2 (ja) * | 2006-10-05 | 2012-09-19 | 株式会社半導体エネルギー研究所 | レーザアニール方法及びレーザアニール装置 |
| DE102008045533B4 (de) * | 2008-09-03 | 2016-03-03 | Innovavent Gmbh | Verfahren und Vorrichtung zum Ändern der Struktur einer Halbleiterschicht |
| US7964453B2 (en) * | 2009-05-15 | 2011-06-21 | Potomac Photonics, Inc. | Method and system for spatially selective crystallization of amorphous silicon |
| JP5471046B2 (ja) * | 2009-06-03 | 2014-04-16 | 株式会社ブイ・テクノロジー | レーザアニール方法及びレーザアニール装置 |
| WO2013172965A1 (en) * | 2012-05-14 | 2013-11-21 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
| JP5918118B2 (ja) * | 2012-12-18 | 2016-05-18 | 株式会社日本製鋼所 | 結晶半導体膜の製造方法 |
| CN104956466B (zh) * | 2012-12-31 | 2018-03-02 | 恩耐公司 | 用于低温多晶硅结晶的短脉冲光纤激光器 |
| EP2966671B1 (en) * | 2013-03-07 | 2022-08-31 | Mitsubishi Electric Corporation | Laser annealing device, and method of producing semiconductor device |
| WO2015127031A1 (en) * | 2014-02-19 | 2015-08-27 | The Trustees Of Columbia University In The City Of New York | Sequential laser firing for thin film processing |
-
2016
- 2016-08-22 GB GBGB1614342.2A patent/GB201614342D0/en not_active Ceased
-
2017
- 2017-01-17 GB GB1700800.4A patent/GB2553162B/en active Active
- 2017-08-16 US US16/327,186 patent/US20190181009A1/en not_active Abandoned
- 2017-08-16 EP EP17795003.7A patent/EP3501034A1/en not_active Withdrawn
- 2017-08-16 WO PCT/GB2017/052423 patent/WO2018037211A1/en not_active Ceased
- 2017-08-16 JP JP2019510894A patent/JP2019532494A/ja not_active Withdrawn
- 2017-08-16 CN CN201780051126.3A patent/CN109643644A/zh active Pending
- 2017-08-16 KR KR1020197007934A patent/KR20190040036A/ko not_active Withdrawn
- 2017-08-22 TW TW106128360A patent/TWI765905B/zh active
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