JP6378974B2 - レーザアニール装置及びレーザアニール方法 - Google Patents
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- B23K2103/00—Materials to be soldered, welded or cut
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Description
2:レーザ光源,2A,2B:パルスレーザ光源,
3:レーザ光照射光学系,
30,33:ミラー,31:ダイクロイックミラー,
32:ビームホモジナイザー,34:マスク,35:マイクロレンズアレイ,
4:照明光源(白色光源),
5:照明光学系,50,51:ハーフミラー,
6:分光検出部,6A:分光器,6B:検出器,
7:検出光学系,70:結像光学系,71:選択光透過部(ブラインド),
8:処理領域走査部,
W:処理対象基板,Sn:処理領域
Claims (11)
- レーザ光源と、
前記レーザ光源から出射されたレーザ光を処理対象基板の処理領域に照射するレーザ光照射光学系と、
可視光域の照明光を出射する照明光源と、
前記照明光源から出射した光を前記処理領域に照射する照明光学系と、
前記レーザ光でアニール処理がなされた前記処理領域で反射した可視光域の光を検出してその分光特性を出力する分光検出部と、
前記処理領域で反射した可視光域の光を前記分光検出部に導く検出光学系とを備え、
前記レーザ光照射光学系は、複数の前記処理領域に同時且つ個別に前記レーザー光を集光するマイクロレンズアレイと、前記マイクロレンズアレイの各マイクロレンズに個別に光を入射させる開口を有するマスクとを備え、
前記検出光学系は、前記マイクロレンズアレイと前記マスクを介して前記処理領域で反射した可視光域の光を前記分光検出部に導くことを特徴とするレーザアニール装置。 - 前記分光検出部は、前記マイクロレンズアレイを介して前記レーザ光が照射される全ての前記処理領域で反射した可視光域の光から特定の処理領域で反射した光を選択的に検出することを特徴とする請求項1記載のレーザアニール装置。
- 前記分光検出部の前方には、前記分光検出部の前方位置に前記処理領域の像を結像する結像光学系と、前記前方位置で前記特定の処理領域で反射した光のみを透過させる選択光透過部を設けたことを特徴とする請求項2記載のレーザアニール装置。
- 前記処理対象基板上の前記処理領域の位置を走査する処理領域走査部を備えることを特徴とする請求項1〜3のいずれか1項記載のレーザアニール装置。
- 処理対象基板の処理領域にレーザ光を照射してアニール処理を施す処理工程と、
前記処理領域に可視光域の照明光を照射し、前記アニール処理直後に前記処理領域で反射した可視光域の光を検出してその分光特性を出力し、前記処理領域のアニール処理が適正になされているか否かをその分光特性によって確認する確認工程とを有し、
前記処理工程では、マイクロレンズアレイと前記マイクロレンズアレイの各マイクロレンズに個別に光を入射させる開口を有するマスクを介して、複数の前記処理領域に同時且つ個別に前記レーザー光を集光し、
前記確認工程では、前記マイクロレンズアレイと前記マスクを介して、前記処理領域で反射した可視光域の光を検出することを特徴とするレーザアニール方法。 - アニール処理の対象が真空成膜により形成された半導体膜であることを特徴とする請求項5のレーザアニール方法。
- 前記半導体膜が気相成長法で形成されたアモルファスシリコンであることを特徴とする請求項6のレーザアニール方法。
- 前記半導体膜がスパッタリング法で形成された金属酸化物半導体であることを特徴とする請求項6のレーザアニール方法。
- アニール処理の対象が塗布により形成された半導体膜であることを特徴とする請求項5のレーザアニール方法。
- レーザアニールの対象が塗布により形成されたシリコン微粒子からなる薄膜であることを特徴とする請求項9のレーザアニール方法。
- レーザアニールの対象が塗布により形成された金属酸化物からなる薄膜であることを特徴とする請求項9のレーザアニール方法。
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JP2014167980A JP6378974B2 (ja) | 2014-08-20 | 2014-08-20 | レーザアニール装置及びレーザアニール方法 |
TW104126624A TWI651144B (zh) | 2014-08-20 | 2015-08-14 | 雷射退火裝置及雷射退火方法 |
US15/500,436 US9905427B2 (en) | 2014-08-20 | 2015-08-19 | Laser annealing device and laser annealing method |
KR1020167035145A KR20170044062A (ko) | 2014-08-20 | 2015-08-19 | 레이저 어닐링 장치 및 레이저 어닐링 방법 |
CN201580044475.3A CN106663611B (zh) | 2014-08-20 | 2015-08-19 | 激光退火装置及激光退火方法 |
PCT/JP2015/073200 WO2016027821A1 (ja) | 2014-08-20 | 2015-08-19 | レーザアニール装置及びレーザアニール方法 |
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JP2019047058A (ja) * | 2017-09-06 | 2019-03-22 | 株式会社ブイ・テクノロジー | 結晶化モニタ方法、レーザアニール装置、およびレーザアニール方法 |
US11285563B2 (en) | 2017-10-20 | 2022-03-29 | Branson Ultrasonics Corporation | Fiber feedback |
US20190118295A1 (en) * | 2017-10-20 | 2019-04-25 | Branson Ultrasonics Corporation | Glowing Part And Tooling In Simultaneous Laser Plastics Welding |
CN108227376A (zh) * | 2018-01-03 | 2018-06-29 | 京东方科技集团股份有限公司 | 一种微结构的制备方法、压印模版、显示基板 |
GB2571997B (en) | 2018-03-16 | 2021-10-27 | X Fab Texas Inc | Use of wafer brightness to monitor laser anneal process and laser anneal tool |
CN110767542B (zh) * | 2018-07-26 | 2020-12-08 | 中国计量科学研究院 | 二维材料电学性能调控系统及其调控方法 |
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JP3580079B2 (ja) * | 1997-04-09 | 2004-10-20 | セイコーエプソン株式会社 | レーザアニール装置、レーザアニール方法 |
JP2002176009A (ja) * | 2000-12-06 | 2002-06-21 | Hitachi Ltd | レーザアニール結晶化in−situ解析装置 |
JP2002176007A (ja) * | 2000-12-08 | 2002-06-21 | Mitsubishi Electric Corp | レーザ処理装置のレーザパワーの測定方法と測定装置 |
US8101018B2 (en) * | 2004-03-04 | 2012-01-24 | Sharp Kabushiki Kaisha | Method for fabricating a semiconductor device and apparatus for inspecting a semiconductor |
GB0510497D0 (en) * | 2004-08-04 | 2005-06-29 | Horiba Ltd | Substrate examining device |
US20100084744A1 (en) * | 2008-10-06 | 2010-04-08 | Zafiropoulo Arthur W | Thermal processing of substrates with pre- and post-spike temperature control |
JP2010118409A (ja) * | 2008-11-11 | 2010-05-27 | Ulvac Japan Ltd | レーザアニール装置及びレーザアニール方法 |
JP5471046B2 (ja) * | 2009-06-03 | 2014-04-16 | 株式会社ブイ・テクノロジー | レーザアニール方法及びレーザアニール装置 |
US20130341310A1 (en) * | 2012-06-22 | 2013-12-26 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for excimer laser annealing process |
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2014
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- 2015-08-19 KR KR1020167035145A patent/KR20170044062A/ko not_active Application Discontinuation
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US20170229307A1 (en) | 2017-08-10 |
CN106663611A (zh) | 2017-05-10 |
CN106663611B (zh) | 2019-05-28 |
TW201607655A (zh) | 2016-03-01 |
US9905427B2 (en) | 2018-02-27 |
WO2016027821A1 (ja) | 2016-02-25 |
KR20170044062A (ko) | 2017-04-24 |
TWI651144B (zh) | 2019-02-21 |
JP2016046330A (ja) | 2016-04-04 |
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