TW201607655A - 雷射退火裝置及雷射退火方法 - Google Patents
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Abstract
本發明提供一種雷射退火裝置以及雷射退火方法,其在短時間內有效地進行確認雷射退火處理是否適當地進行之步驟。雷射退火裝置(1)具備:雷射光源(2);雷射光照射光學系統(3),其將從雷射光源(2)出射之雷射光照射於處理對象基板(W)的處理區域(Sn);照明光源(4),其出射可見光區域的照明光;照明光學系統(5),其將從照明光源(4)出射之光照射於處理區域(Sn);分光檢測部(6),其檢測在用雷射光進行退火處理之處理區域(Sn)反射之可見光區域的光,並輸出其分光特性。
Description
本發明係有關一種對基板上的特定區域照射雷射光而進行退火處理之雷射退火裝置、以及使用了該雷射退火裝置之雷射退火方法。
雷射退火係藉由基於雷射光的照射產生之熱作用來引起半導體或金屬晶格的轉移之處理技術,具有僅對必要的部份進行局部處理,並且能夠藉由在較高的能量密度下進行之退火而縮短處理時間等優點。該種雷射退火適用於各種用途,在推進高速化及大型化之液晶顯示器的製造步驟中成為必不可少之處理技術。當前作為主流的薄膜電晶體(TFT)方式液晶顯示器的高精細面板中,低溫多晶矽(LTPS)TFT被廣泛使用,但是雷射退火在對TFT形成區域的非晶矽膜局部照射雷射光而進行多晶矽化之處理中而被使用(例如,參閱下述專利文獻1)。
專利文獻1:日本專利公開2010-283073號公報
伴隨著雷射退火處理之製造步驟中,在處理之後確認是否正規進行該處理,這在穩定地供給合格產品方面是必要的。尤其,在液晶顯示器或者有機EL顯示器的TFT基板製造步驟中,在基板上存在複數個之所有的TFT形成區域,要求結晶性高的多晶矽均一地生成,藉由
該均一性,液晶顯示器或有機EL顯示器的操作性能受到較大的影響,因此在各TFT形成區域確認是否適當地進行雷射退火處理之步驟,在進行所製造之液晶顯示器或有機EL顯示器的品質管理方面,成為重要的步驟。
以往,該種雷射退火處理後的確認步驟係藉由測定薄膜電晶體的電氣特性而進行的,但是為了作為薄膜電晶體而動作,需要在雷射退火處理之後進行複數個步驟。從而,在經過複數個步驟之後檢測雷射退火處理的不合格產品,存在產生多餘的時間或材料等的損失之問題。
本發明係將解決該種問題作為課題的一例者。亦即,本發明的目的為,無需等待最終步驟便能夠當場確認是否適當地進行雷射退火處理之步驟,藉此有效地進行TFT基板的製造等。
為了實現該種目的,本發明之雷射退火裝置及雷射退火方法係具備以下構成者。
一種雷射退火裝置,其具備:雷射光源;雷射光照射光學系統,其將從前述雷射光源出射之雷射光照射於處理對象基板的處理區域;照明光源,其出射可見光區域的照明光;照明光學系統,其將從前述照明光源出射之光照射於前述處理區域;分光檢測部,其檢測在用前述雷射光進行退火處理之前述處理區域反射之可見光區域的光,並輸出其分光特性。
一種雷射退火方法,其具有:處理步驟,對處理對象基板的處理區域照射雷射光而實施退火處理;及確認步驟,對前述處理區域照射可見光區域的照明光,在前述退火處理之後,立刻檢測在前述處理區域反射之可見光區域的光,並輸出其分光特性,藉由其分光特性來
確認是否適當地進行前述處理區域的退火處理。
依具有該種特徴之雷射退火裝置及雷射退火方法,在對處理區域進行退火處理之後,能夠立刻藉由在處理區域反射之可見光區域的光的分光特性來確認是否適當地進行退火處理。藉此,能夠一邊推進對整個處理對象基板進行雷射退火處理,一邊確認是否適當地同時進行雷射退火處理,並能夠在短時間內有效地進行該確認步驟。並且,藉由利用該種雷射退火裝置及雷射退火方法來製造TFT基板,能夠謀求TFT基板的生產率的提高。
1、1A‧‧‧雷射退火裝置
2‧‧‧雷射光源
2A、2B‧‧‧脈衝雷射光源
3‧‧‧雷射光照射光學系統
4‧‧‧照明光源(白色光源)
5‧‧‧照明光學系統
6‧‧‧分光檢測部
6A‧‧‧分光器
6B‧‧‧檢測器
7‧‧‧檢測光學系統
8‧‧‧處理區域掃描部
30、33‧‧‧反射鏡
31‧‧‧分色鏡
32‧‧‧光束均勻器
34‧‧‧遮罩
34a‧‧‧開口
35‧‧‧微透鏡陣列
35a‧‧‧微透鏡
50、51‧‧‧半反射鏡
70‧‧‧成像光學系統
71‧‧‧選擇光透過部(盲區)
W‧‧‧處理對象基板
Sn‧‧‧處理區域
λ1‧‧‧波長
λ2‧‧‧波長
第1圖係說明本發明的實施形態之雷射退火裝置及雷射退火方法的動作原理之說明圖。
第2圖係表示本發明的實施形態之雷射退火裝置的一例之說明圖。
第3圖係表示本發明的實施形態之雷射退火裝置中之雷射光源的輸出例之說明圖。
第4圖係本發明的實施形態之雷射退火裝置的另一例之說明圖。
以下,對本發明的實施形態進行說明。本發明的實施形態之雷射退火裝置及雷射退火方法係,具備在進行雷射退火處理之後立刻確認其處理區域是否被適當地進行處理之系統或者步驟者,該系統或者步驟係依據如下見解,亦即藉由已處理之處理區域中之觀察圖像的色調能夠判斷是否適當地進行處理之見解而想出者。
例如,藉由在成膜於基板上之非晶矽膜的處理區域照射雷射光,而局部生成結晶性高的多晶矽之退火處理中,若在可見光區域的光源(例如白色光源)下觀察退火處理後的區域,則能夠藉由色調的
差異來確認結晶性的程度。
並且,若利用可見光區域的光來照明退火處理後的區域,並測量其反射光的分光特性,則如第1圖所示,在結晶性高且進行適當的退火處理之情況下,如圖示A所示,可獲得特定波長域且顯示出較高的光譜強度之分光特性。與此相對,在結晶性低且未進行適當的退火處理之情況下,如圖示B所示,無法獲得特定的波長域且顯示出較高的光譜強度之分光特性。本發明的實施形態之雷射退火裝置及雷射退火方法係利用了該分光特性的差異者,藉由獲得用可見光區域的光來照明處理區域之反射光的分光特性資料,進行確認是否進行適當的退火處理。
並且,本發明的實施形態之雷射退火方法中之退火處理的對象,只要係藉由基於雷射退火處理而產生之結晶化使白色光的反射光顯示出特定的波長域、且較高的光譜強度之材料即可,能夠舉例藉由真空成膜或塗佈而形成之半導體膜(例如,藉由氣相生長法而形成之非晶矽、藉由濺射法而形成之金屬氧化物半導體、藉由塗佈而形成之包含矽微粒子之薄膜、藉由塗佈而形成之包含金屬氧化物之薄膜等)等(這裡的塗佈包括將粒子分散於溶劑之溶液的塗佈。)。
第2圖表示本發明的實施形態之雷射退火裝置的一個構成例。雷射退火裝置1具備雷射光源2、雷射光照射光學系統3、照明光源4、照明光學系統5、分光檢測部6。雷射光源2係出射進行雷射退火處理之雷射光之光源,在此,具備波長λ1(=532nm)的脈衝雷射光源2A和波長λ2(=1064nm)的脈衝雷射光源2B。雷射光源2的輸出,在對TFT基板的TFT形成區域中之非晶矽膜進行退火處理之情況下,利用如第3圖所示之脈衝間隔及強度同時輸出2個脈衝雷射光源。該例子中,當對一個處理區域進行1次退火處理時,將波長λ1的脈衝雷射光源2A的輸出以比較短的脈衝間隔(20ns)且以比較高的強度進行輸
出,對波長λ2的脈衝雷射光源2B的輸出以比較長的脈衝間隔(80~1300ns)並將強度降低得較低來進行輸出。該雷射光源2亦可以係準分子雷射,其以一定的重複週期發射波長為308nm或353nm的雷射光。
雷射光照射光學系統3將從雷射光源2出射之雷射光照射於處理對象基板(例如、TFT基板)W的處理區域(例如、TFT形成區域)Sn。圖示的例中,利用由反射鏡30和分色鏡31所構成之合成光學系統來合成從2個脈衝雷射光源2A、2B出射之雷射光,並使其入射於光束均勻器32,從而獲得直徑變大且空間上具有均一強度之雷射光,使該雷射光在反射鏡33偏轉,並經由遮罩34和微透鏡陣列35照射於處理對象基板W。這裡的遮罩34和微透鏡陣列35,與在處理對象基板W上呈點陣形狀排列之複數個處理區域Sn對應地排列有開口34a和微透鏡35a,透過開口34a和微透鏡35a之雷射光同時且個別地在處理對象基板W上的複數個處理區域Sn聚光。在此,遮罩34的開口34a和處理區域Sn具有共軛關係(物體和像的關係)為較佳。
照明光源4係出射可見光區域的照明光之光源,例如能夠利用鹵素燈等白色光源。照明光學系統5將從照明光源4出射之光照射於被照射雷射光之處理區域Sn。在此,照明光學系統5由相對於從照明光源4出射之光的光軸傾斜配置之半反射鏡50,和相對於照射於處理區域Sn之雷射光的光軸傾斜配置之半反射鏡51構成。
分光檢測部6具備分光器6A和檢測器6B,其檢測在用雷射光進行退火處理之處理區域Sn反射之可見光區域的光,並輸出其分光特性。相對於照射於處理區域Sn之雷射光的光軸而傾斜配置之半反射鏡51兼作將反射光引導至分光檢測部6之檢測光學系統7。
具備該種構成之雷射退火裝置1,經由雷射光照射光學系統3,將從雷射光源2出射之雷射光照射於處理對象基板W的處理區域Sn,
藉此,對處理區域Sn實施雷射退火的處理。如圖所示,若雷射光照射光學系統3係具備光束均勻器32、遮罩34、微透鏡陣列35者,則雷射光同時且個別地照射於處理對象基板W的複數個處理區域Sn,且在各個處理區域Sn進行雷射退火處理。
與此相對,在被照射雷射光之處理區域Sn,經由照明光學系統5照射從照明光源4出射之照明光。並且,在雷射光照射於處理區域Sn而進行雷射退火處理之後,在其處理區域Sn反射之可見光區域的光立刻經由檢測光學系統7在分光檢測部6被檢測出來。如圖所示,若雷射光照射光學系統3係具備微透鏡陣列35者,則在經由微透鏡陣列35被照射雷射光之所有的處理區域Sn反射之可見光區域的光在分光檢測部6被檢測出來。
依利用該種雷射退火裝置1之雷射退火方法,在雷射光照射於處理對象基板W的處理區域Sn而實施退火處理之處理步驟之後,能夠立刻在分光檢測部6檢測在其處理區域Sn反射之可見光區域的光,並輸出其反射光的分光特性。藉此,在將雷射光照射於處理區域Sn而實施退火處理之處理步驟之後,能夠立刻實施藉由反射光的分光特性來確認是否適當地進行其處理區域Sn的退火處理之確認步驟。
並且,在雷射光照射光學系統3和檢測光學系統7中共用遮罩34和微透鏡陣列35,藉此成為確認步驟的對象之區域與雷射光的處理區域Sn相同,因此來自未照射雷射光(未結晶化)之區域的反射光不會入射於分光檢測部。從而,即使在分光檢測部不進行特別的處理,亦能夠防止干擾混入於分光特性,並能夠簡化裝置的構成。另外,藉由退火裝置和檢査裝置的一體化,能夠謀求省空間化。
第2圖所示之例子中,在經由微透鏡陣列35對複數個處理區域Sn同時且個別地進行退火處理之情況下,對複數個處理區域Sn統一進行退火處理之後,能夠立刻用分光檢測部6的輸出來統一確認在該複數
個處理區域Sn是否適當地進行處理。此時的分光檢測部6的輸出係統一進行退火處理之複數個處理區域Sn整體的分光特性,而並非係對其中各個處理區域Sn進行確認者。
雷射退火裝置1具備掃描處理對象基板W上的處理區域Sn的位置之處理區域掃描部8。圖示的例中,處理區域掃描部8使處理對象基板W在與照射於處理區域Sn之雷射光的光軸交差之2維平面內移動,但並不限定於此,亦可以固定處理對象基板W,而使雷射光照射光學系統3及照明光學系統5移動,並使照射於處理區域Sn之雷射光及照明光對處理對象基板W進行掃描者。並且,處理區域掃描部8的掃描可以係連續的掃描,亦可以係每進行一次退火處理,使處理對象基板W上的處理區域Sn的位置位移之間斷的掃描。藉由處理區域掃描部8的掃描,配置於整個處理對象基板W之處理區域Sn随時被進行退火處理。
第4圖表示本發明的另一實施形態之雷射退火裝置。與第2圖所示之例相同的部位標註相同的符號,並省略重複說明。該實施形態之雷射退火裝置1A在檢測光學系統7中具備成像光學系統70和選擇光透過部(盲區)71。成像光學系統70與微透鏡陣列35配合,在配置有選擇光透過部71之分光檢測部6的前方位置,將處理對象基板W的處理區域Sn成像。並且,選擇光透過部71藉由設置開口部而選擇性地使反射光透過,該開口部在該位置成像之複數個處理區域Sn的像中僅對應於特定的處理區域Sn的像。
依該種雷射退火裝置1A,與第2圖所示之例相同地,將從雷射光源2出射之雷射光照射於處理對象基板W的處理區域Sn,藉此對處理區域Sn實施雷射退火處理,並對其處理區域Sn照射從照明光源4出射之照明光而進行雷射退火處理之後,立刻在分光檢測部6檢測在其處理區域Sn反射之可見光區域的光,從而進行確認是否適當地進行退火處理。
此時,第4圖所示之雷射退火裝置1A中,分光檢測部6從經由微透鏡陣列35被照射雷射光之所有的處理區域Sn反射之可見光區域的光中,選擇性地檢測在特定的處理區域Sn反射之光。藉此,即使在經由微透鏡陣列35對複數個處理區域Sn統一進行退火處理之情況下,亦能夠個別地確認是否適當地進行各個處理區域Sn的退火處理。
如以上說明,依本發明的實施形態之雷射退火裝置1、1A及雷射退火方法,在對處理區域Sn進行退火處理之後,能夠立刻藉由在處理區域Sn反射之可見光區域的光的分光特性來確認是否適當地進行退火處理。藉此,能夠一邊推進對整個處理對象基板W進行雷射退火處理,一邊確認是否適當地同時進行雷射退火處理,並且在短時間內有效地進行該確認步驟。並且,利用該種雷射退火裝置1、1A及雷射退火方法來製造TFT基板,藉此能夠謀求TFT基板的生產率的提高。
以上,參閱圖式進行詳述關於本發明的實施形態,但是具體的構成並不限定於該等實施形態者,即使有不脫離本發明宗旨的範圍的設計上的變更等亦屬於本發明。並且,上述各實施形態只要其目的及構成等中無特別的矛盾或問題,則能夠沿用並組合彼此的技術。
1‧‧‧雷射退火裝置
2‧‧‧雷射光源
2A‧‧‧脈衝雷射光源
2B‧‧‧脈衝雷射光源
3‧‧‧雷射光照射光學系統
4‧‧‧照明光源
5‧‧‧照明光學系統
6‧‧‧分光檢測部
6A‧‧‧分光器
6B‧‧‧檢測器
7‧‧‧檢測光學系統
8‧‧‧處理區域掃描部
30‧‧‧反射鏡
31‧‧‧分色鏡
32‧‧‧光束均勻器
33‧‧‧反射鏡
34‧‧‧遮罩
34a‧‧‧開口
35‧‧‧微透鏡陣列
35a‧‧‧微透鏡
50‧‧‧半反射鏡
51‧‧‧半反射鏡
Sn‧‧‧處理區域
W‧‧‧處理對象基板
λ1‧‧‧波長
λ2‧‧‧波長
Claims (13)
- 一種雷射退火裝置,其特徵在於具備:雷射光源;雷射光照射光學系統,其將從前述雷射光源出射之雷射光照射於處理對象基板的處理區域;照明光源,其出射可見光區域的照明光;照明光學系統,其將從前述照明光源出射之光照射於前述處理區域;及分光檢測部,其檢測在以前述雷射光進行退火處理之前述處理區域反射之可見光區域的光,並輸出其分光特性。
- 如請求項1之雷射退火裝置,其中前述雷射光照射光學系統具備微透鏡陣列,該微透鏡陣列使前述雷射光同時且個別地於複數個前述處理區域聚光。
- 如請求項2之雷射退火裝置,其中前述分光檢測部檢測在經由前述微透鏡陣列被照射前述雷射光之所有的前述處理區域反射之可見光區域的光。
- 如請求項2之雷射退火裝置,其中前述分光檢測部從經由前述微透鏡陣列被照射前述雷射光之所有的前述處理區域反射之可見光區域的光中,選擇性地檢測在特定的處理區域反射之光。
- 如請求項4之雷射退火裝置,其中在前述分光檢測部的前方設置有:成像光學系統,其在前述分光檢測部的前方位置將前述處理區域的像成像;及選擇光透過部,其僅使在前述前方位置且在前述特定的處理區域反射之光透過。
- 如請求項1至5中任一項之雷射退火裝置,其中具備掃描前述處理對象基板上的前述處理區域的位置之處理區域掃描部。
- 一種雷射退火方法,其特徵在於具有:處理步驟,對處理對象基板的處理區域照射雷射光而實施退火處理;及確認步驟,對前述處理區域照射可見光區域的照明光,且在前述退火處理之後立刻檢測在前述處理區域反射之可見光區域的光,並輸出其分光特性,藉由其分光特性而確認是否適當地進行前述處理區域的退火處理。
- 如請求項7之雷射退火方法,其中退火處理的對象為藉由真空成膜而形成之半導體膜。
- 如請求項8之雷射退火方法,其中前述半導體膜為藉由氣相生長法而形成之非晶矽。
- 如請求項8之雷射退火方法,其中前述半導體膜為藉由濺射法而形成之金屬氧化物半導體。
- 如請求項7之雷射退火方法,其中退火處理的對象為藉由塗佈而形成之半導體膜。
- 如請求項11之雷射退火方法,其中雷射退火的對象為藉由塗佈而形成之包含矽微粒子之薄膜。
- 如請求項11之雷射退火方法,其中雷射退火的對象為藉由塗佈而形成之包含金屬氧化物之薄膜。
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CN110767542B (zh) * | 2018-07-26 | 2020-12-08 | 中国计量科学研究院 | 二维材料电学性能调控系统及其调控方法 |
KR20210057248A (ko) * | 2019-11-11 | 2021-05-21 | 삼성디스플레이 주식회사 | 레이저 조사 장치 및 레이저 조사 방법 |
JP2022030175A (ja) * | 2020-08-06 | 2022-02-18 | パナソニックIpマネジメント株式会社 | レーザ加工ヘッド及びレーザ加工装置 |
JP7411914B2 (ja) * | 2020-08-06 | 2024-01-12 | パナソニックIpマネジメント株式会社 | レーザ加工装置及びレーザ加工ヘッド |
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JP3580079B2 (ja) * | 1997-04-09 | 2004-10-20 | セイコーエプソン株式会社 | レーザアニール装置、レーザアニール方法 |
JP2002176009A (ja) * | 2000-12-06 | 2002-06-21 | Hitachi Ltd | レーザアニール結晶化in−situ解析装置 |
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US8101018B2 (en) * | 2004-03-04 | 2012-01-24 | Sharp Kabushiki Kaisha | Method for fabricating a semiconductor device and apparatus for inspecting a semiconductor |
GB0510497D0 (en) * | 2004-08-04 | 2005-06-29 | Horiba Ltd | Substrate examining device |
US20100084744A1 (en) * | 2008-10-06 | 2010-04-08 | Zafiropoulo Arthur W | Thermal processing of substrates with pre- and post-spike temperature control |
JP2010118409A (ja) * | 2008-11-11 | 2010-05-27 | Ulvac Japan Ltd | レーザアニール装置及びレーザアニール方法 |
JP5471046B2 (ja) * | 2009-06-03 | 2014-04-16 | 株式会社ブイ・テクノロジー | レーザアニール方法及びレーザアニール装置 |
US20130341310A1 (en) * | 2012-06-22 | 2013-12-26 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for excimer laser annealing process |
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US9905427B2 (en) | 2018-02-27 |
WO2016027821A1 (ja) | 2016-02-25 |
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JP2016046330A (ja) | 2016-04-04 |
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