TWI607545B - 使用雷射標示晶圓的方法 - Google Patents

使用雷射標示晶圓的方法 Download PDF

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TWI607545B
TWI607545B TW104117877A TW104117877A TWI607545B TW I607545 B TWI607545 B TW I607545B TW 104117877 A TW104117877 A TW 104117877A TW 104117877 A TW104117877 A TW 104117877A TW I607545 B TWI607545 B TW I607545B
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具春會
金秀永
鄭成釩
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Eo科技股份有限公司
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Description

使用雷射標示晶圓的方法
本發明的一個或多個實施例是有關於一種標示晶圓的方法，且特別是有關於一種藉由透過附接於所述晶圓的表面上的處理捲帶以對所述晶圓的表面照射雷射光束所執行關於晶圓的表面的雷射標示操作的方法。
當對於薄型晶圓或具有翹曲(warpage)的晶圓執行雷射標示操作時，則可能會對晶圓造成傷害。因此，為了避免傷害晶圓，曾經使用於處理捲帶附接於晶圓的表面的狀態下執行的一種雷射處理操作的方法。在此情況下，為了對處理捲帶附接於其上的晶圓執行雷射標示操作，則需要照射雷射光束穿透處理捲帶以達到晶圓的表面。一般而言，附接於所述晶圓的處理捲帶可由多種材料形成，也因此，雷射光束穿透處理捲帶的透射率會因處理捲帶的材料而改變。對於晶圓的表面的雷射標示操作的品質是基於處理捲帶的透射率。
本發明的一個或多個實施例包括藉由透過附接於所述晶圓的表面的處理捲帶以具有波長為532nm的雷射光束照射晶圓的表面所執行的關於晶圓的表面的雷射標示操作的方法。
根據本發明的一個或多個實施例提出一種使用雷射標示晶圓的方法，一處理捲帶附接於所述晶圓，所述方法包括：經由附接於所述晶圓的表面上的處理捲帶傳送具有波長為532奈米(nm)的雷射光束至所述晶圓的所述表面上；以及藉由以預設速度掃描具有波長為532nm的所述雷射光束以於所述晶圓的表面執行標示操作，其中具有波長為532nm的所述雷射光束具有大約8千赫茲(kHz)至40kHz的頻率以及大約0.8瓦(W)至2W的輸出功率。
所述晶圓的標示品質是根據所述處理捲帶的透射率調整具有波長為532nm的所述雷射的頻率、輸出功率以及速度來決定。
所述具有波長為532nm的所述雷射光束具有20kHz至40kHz的頻率、0.8W至1.5W的輸出功率以及300毫米/秒(mm/s)或以上的雷射光束的速度。
所述具有波長為532nm的所述雷射光束具有8kHz至20kHz的頻率、1W至2W的輸出功率以及200mm/s至300mm/s的雷射光束的速度。
所述處理捲帶可包括聚氯乙烯(PVC)、聚烯族烴(PO)或聚乙烯(PET)。
所述處理捲帶可為透明、藍色或灰色。
110‧‧‧雷射光源
120‧‧‧掃描器
130‧‧‧聚焦鏡片
150‧‧‧處理捲帶
L‧‧‧雷射光束
W‧‧‧晶圓
圖1是依照本發明的一實施例的一種雷射標示系統的示意圖。
圖2是圖1中所示附接於晶圓的上表面的處理捲帶以及晶圓的放大圖。
下文中，本發明將更全面地參照附圖進行描述，其中本發明的示範性實施例示於附圖中。本發明可以許多不同的形式來實現且不應被解釋為限於本文所闡述的示例性實施例。此外，提供這些實施例使得本公開將是徹底且完整的，並且將充分地傳達本發明的範圍至本領域具有通常知識者。附圖中相同的參考標號表示相同的元件，並且為了清楚起見放大層的厚度以及區域。應理解的是，當組件，例如是層、膜、區域或是板，被提及於另一個組件“上”時，則所述組件可以是直接在另一個元件上或其中可以存在其他組件。此外，形成層的材料為範例，亦可使用其他的材料。
圖1是依照本發明的一實施例的一種雷射標示系統的示意圖，及圖2是圖1中所示附接於晶圓W的上表面的處理捲帶150以及晶圓W的放大圖。
請參照圖1以及圖2，根據本實例中的雷射標示系統包括發射雷射光束L的雷射光源110、掃描器120，其中雷射光束L由雷射光源110入射至掃描器120上，藉由以一預設速度掃描入射的雷射光束L於晶圓W的表面上以執行標示操作，以及將從掃描器120射出的雷射光束L聚焦於晶圓W的表面上的聚焦鏡片130。雖然並未繪示於圖式中，但更可配置至少一光學元件於雷射光束L的光學路徑上。
為標示操作的物件的所述晶圓W可以是矽晶圓或是藍寶石(sapphire)晶圓，但不以此為限。也就是說，各種用於晶圓的材料可用以製作晶圓W)。此外，處理捲帶150為附接於晶圓W的表面(圖1中的上表面。處理捲帶150可包括一種傳送由雷射光源110所發射的雷射光束L的材料。處理捲帶150可由，例如是聚氯乙烯(PVC)、聚烯族烴(PO)或聚乙烯(PET)，所形成。在PVC、PO以及PET中，PVC對於雷射光束L具有最高的透射率，而PO對於雷射光束L具有最低的透射率。然而，本發明不以上述材料為限，而所述處理捲帶150可以由其他不同的材料所形成。此外，處理捲帶150可以例如是透明、藍色或灰色。當處理捲帶150為透明色時，處理捲帶150對於雷射光束L具有最高的透射率；而當處理捲帶150為灰色時，處理捲帶150對於雷射光束L具有最低的透射率。然而，但本發明的實施例不以此為限，而所述處理捲帶150可具有其他不同的顏色。
用以執行標示操作的雷射光束L是由雷射光源110所發 射。在本實施例中，由雷射光源110所發射的雷射光束L可以是具有波長為532nm的綠色雷射光。由雷射光源110所發射具有波長為532nm的雷射光束L入射至掃描器120，且所述掃描器120反射波長為532nm的雷射光束L朝向至聚焦鏡片130。在此情況下，掃描器120可透過旋轉掃描入射雷射光束L，也因此，入射於晶圓W的表面上的雷射光束L的速度可根據掃描器120的旋轉作調整。
具有波長為532nm的雷射光束L由掃描器120發射經由聚焦鏡片130穿過處理捲帶150，而後，聚焦於晶圓W的表面。接著，入射於晶圓W的表面的雷射光束L被掃描器120以預設速度移動，以致於對於晶圓W的表面上可執行標示操作。
在本實施例中，由雷射光源110發射且具有波長為532nm的雷射光束L可具有範圍從8千赫茲(kHz)至40kHz的頻率，以及0.8瓦(W)至2W的輸出功率。在此情況下，於晶圓W上的標示品質可根據處理捲帶的透射率藉由調整具有波長為532nm的雷射光束L的頻率、輸出功率以及掃描速度來決定。舉例而言，假若處理捲帶150的透射率相對高時，則可藉由使用波長為532nm的雷射光束L以相對小的輸出功率得到相對完美的標示品質。此外，假若處理捲帶150的透射率低時，則可藉由僅使用波長為532nm的雷射光束L以相對高的輸出功率得到高的標示品質。
特別的是，假若處理捲帶150的透射率對於具有波長為532nm的雷射光束L是相對高時，則波長為532nm的雷射光束L 可具有20kHz至40kHz的頻率與0.8W至1.5W的輸出功率。在此情況下，假若波長為532nm的雷射光束L的速度被設定為300毫米/秒(mm/s)或更快時，則可得到完美的標示品質。
此外，假若對於具有波長為532nm的雷射光束L的處理捲帶150的透射率為相對低時，則波長為532nm的雷射光束L可具有8kHz至20kHz的頻率與1W至2W的輸出功率。在此情況下，假若具有波長為532nm的雷射光束L的速度被設定範圍從200mm/s至300mm/s時，則可得到完美的標示品質。如上所述，根據本實施例的雷射標示方法，可根據處理捲帶150的透射率藉由調整具有波長為532nm的雷射光束L的頻率、輸出功率以及速度得到完美的標示品質。
根據本發明，當執行關於處理捲帶附接於其上的晶圓的標示操作時，可藉由照射具有波長為532nm的雷射光束通過附接於晶圓的表面的處理捲帶來執行晶圓標示。在此情況下，可根據處理捲帶的透射率藉由優化雷射光束的頻率、輸出功率以及速度來改善雷射標示品質。雖然本發明的一個或多個實施例已參照附圖被描述，對於本領域具有通常知識者應可了解，在形式和細節上的各種改變且不脫離的精神和範圍的情況下，則本發明的範圍由以下申請專利範圍所限定。
110‧‧‧雷射光源
120‧‧‧掃描器
130‧‧‧聚焦鏡片
150‧‧‧處理捲帶
L‧‧‧雷射光束
W‧‧‧晶圓

Claims (6)

  1. 一種使用雷射標示晶圓的方法，一處理捲帶附接於該晶圓，所述方法包括： 經由附接於該晶圓的表面上的該處理捲帶傳送具有波長為532奈米的雷射光束至該晶圓的該表面上；以及 藉由以預設速度掃描具有波長為532奈米的該雷射光束以於該晶圓的表面執行標示操作， 其中具有波長為532奈米的該雷射光束具有大約8千赫茲至40千赫茲的頻率以及大約0.8瓦至2瓦的輸出功率。
  2. 如申請專利範圍第1項所述的方法，其中該晶圓的標示品質是根據該處理捲帶的透射率藉由調整具有波長為532奈米的該雷射的頻率、輸出功率以及速度來決定。
  3. 如申請專利範圍第2項所述的方法，其中具有波長為532奈米的該雷射光束具有20千赫茲至40千赫茲的頻率、0.8瓦至1.5瓦的輸出功率，以及雷射光束的速度為300毫米/秒或以上。
  4. 如申請專利範圍第2項所述的方法，其中具有波長為532奈米的該雷射光束具有8千赫茲至20千赫茲的頻率、1瓦至2瓦的輸出功率，以及雷射光束的速度為200毫米/秒至300毫米/秒的。
  5. 如申請專利範圍第1項所述的方法，其中該處理捲帶包括聚氯乙烯(PVC)、聚烯族烴(PO)或聚乙烯(PET)。
  6. 如申請專利範圍第1項所述的方法，其中該處理捲帶為透明、藍色或灰色。
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