CN106463497B - 晶片打标方法 - Google Patents

晶片打标方法 Download PDF

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CN106463497B
CN106463497B CN201480079450.2A CN201480079450A CN106463497B CN 106463497 B CN106463497 B CN 106463497B CN 201480079450 A CN201480079450 A CN 201480079450A CN 106463497 B CN106463497 B CN 106463497B
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具春会
金秀永
郑成钒
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Abstract

本发明公开了一种利用激光对附着有加工用带的晶片进行打标的方法。所公开的激光打标方法包括：使波长为532nm的激光束透过被附着在所述晶片的一面上的所述加工用带的步骤；以及使所述波长为532nm的激光束以预定速度移动，以在所述晶片的一面上执行打标操作的步骤，其中，所述波长为532nm的激光束具有8kHz至40kHz的频率和0.8W至2W的输出功率。

Description

晶片打标方法
技术领域
本发明涉及晶片打标方法，具体地涉及使激光束透过被附着在晶片的一面上的加工用带以对晶片的一面执行激光打标操作的方法。
背景技术
当对厚度薄的晶片或者发生翘曲(warpage)的晶片进行激光打标操作时，晶片很可能发生损坏。因此，作为用于完善其的方法，目前使用以利用加工用带在晶片的一面附着加工用带的状态来执行激光加工操作的方法。在该情况下，为了对附着有加工用带的晶片进行打标操作，需要激光束透过加工用带而到达晶片的表面。通常，附着到晶片的加工用带可以由各种材料制成，根据该加工用带的材料，激光束透过加工用带的透射率会有所不同。根据该加工用带的透射率，在晶片表面实现的激光打标的质量也会有所不同。
发明内容
技术问题
根据本发明的一实施例，提供一种使波长为532nm的激光束透过被附着在晶片的一面上的加工用带以对晶片的一面执行激光打标操作的方法。
有益效果
根据本发明的实施例，在对附着有加工用带的晶片进行打标时，可以通过使波长为532nm的激光束透过被附着在晶片的一面的所述加工用带而进行晶片打标操作。其中，可以通过根据加工用带的透射率对激光束的频率、输出功率和移动速度进行优化来提高激光打标的质量。
附图说明
图1示意性地示出根据本发明的实施例的激光打标系统。
图2放大示出在图1中示出的晶片和附着在晶片的上面的加工用带。
具体实施方式
以下参照附图详细说明本发明的实施例。下面例示的实施例不用于限制本发明的范围，这些实施例是为了向本领域的普通技术人员说明本发明而提供的。附图中相同的附图标记指示相同的组成部分，为了说明的清楚起见可以夸大各组成部分的大小或厚度。此外，当描述预定的材料层存在于基板或其它层上时，该材料层可以直接接触基板或其它层，也可以在其之间存在其它的第三层。此外，在下面的实施例中，形成各层的材料为示例性的，因此也可以使用这些材料之外的其他材料。
图1示意性地示出根据本发明的实施例的激光打标系统。而且，图2放大示出在图1中示出的晶片W和附着在晶片W的表面的加工用带150。
参照图1和图2，根据本发明的激光打标系统可以包括：激光光源110，该激光光源110发射激光束L；扫描仪(scanner)120，从所述激光光源110发射的激光束L入射至该扫描仪120，该扫描仪120通过旋转使所入射的激光束L以预定速度在晶片W的表面上移动，以执行打标操作；以及聚焦透镜(focusing lens)130，该聚焦透镜130使从所述扫描仪120发射出的激光束L聚集在晶片W的表面上。此外，尽管图中未示出，但在所述激光束L的光路上还设置有至少一个光学单元。
作为打标操作的加工对象的所述晶片W例如可以利用硅晶片或者蓝宝石晶片等，但不限于此，也可以使用除此之外的其他各种材料的晶片。另外，在所述晶片W的表面(图1中的上表面)上附着有加工用带150。该加工用带150可以包括使从激光光源110射出的激光束L透过的材料。例如，所述加工用带150可以由聚氯乙烯(PVC)、聚烯烃(PO)或聚乙烯(PET)等制成。在这些材料中，针对激光束的透射率最高的材料可以是PVC，透射率最低的材料可以为PO。然而，不限于以上这些材料，所述加工用带150可以包括除这些材料以外的其他各种材料。此外，所述加工用带150例如可以为透明色、蓝色和灰色。其中，针对激光束L的透射率最高的颜色可以是透明色，透射率最低的颜色可以为灰色。然而，不限于以上这些颜色，并且所述加工用带150可以包括除这些颜色以外的其他各种颜色。
从所述激光光源110发射出用于执行打标操作的激光束L。在本实施例中，从所述激光光源110发射出的激光束L可以为波长为532nm的绿色激光束(green laser beam)。从所述激光光源110发射出的波长为532nm的激光束L入射至扫描仪120，所述扫描仪120使波长为532nm的激光束L朝向聚焦透镜130反射。其中，所述扫描仪120可以通过旋转使所入射的激光束L移动，因此，通过所述扫描仪120的旋转可以调节入射至晶片W的表面的激光束L的移动速度。
从所述扫描仪120发射出的波长为532nm的激光束L经由聚焦透镜130透过加工用带150，然后聚集在晶片W的表面。其中，通过扫描仪120使入射至晶片W的表面的激光束L以预定速度移动，从而可以对晶片W的表面执行打标操作。
在本实施例中，从所述激光光源110发射出的波长为532nm的激光束L可以具有约8kHz至40kHz的频率和0.8W至2W的输出功率。其中，可以通过根据加工用带150的透射率对所述波长为532nm的激光束L的频率、输出功率和移动速度进行调节，控制所述晶片W的打标质量。例如，在所述加工用带150的透射率高的情况下，即使利用具有相对小的输出功率的、波长为532nm的激光束L也可以获得好的打标质量；在所述加工用带150的透射率低的情况下，需要利用具有相对大的输出功率的、波长为532nm的激光束L才能够获得好的打标质量。
更具体地，在针对波长为532nm的激光束L的加工用带150的透射率比较高时，所述波长为532nm的激光束L可以具有约20kHz至40kHz的频率和0.8W至1.5W的输出功率。在该情况下，在波长为532nm的激光束L的移动速度为300mm/s以上时，可以获得优异的打标质量。
此外，在针对波长为532nm的激光束L的加工用带150的透射率比较低时，所述波长为532nm的激光束L可以具有约8kHz至20kHz的频率和1W至2W的输出功率。在该情况下，在波长为532nm的激光束L的移动速度为200mm/s至300mm/s时，可以获得优异的打标质量。
如上所述，在根据本发明的实施例的激光打标方法中，可以通过根据加工用带150的透射率对波长为532nm的激光束L的频率、输出功率和移动速度进行调节，获得优异的打标质量。
虽然在上文描述了本发明的实施例，但是这些实施例仅为示例性的，本领域的普通技术人员可以理解，可以从这些实施例形成各种变型和等同的其他实施例。
实施方式
在本发明的一方面中，
提供一种晶片打标方法，所述晶片打标方法对附着有加工用带的晶片进行打标，所述晶片打标方法包括：使波长为532nm的激光束透过被附着在所述晶片的一面的所述加工用带的步骤；以及
使所述波长为532nm的激光束以预定速度移动，以在所述晶片的一面上执行打标操作的步骤，
其中，所述波长为532nm的激光束具有8kHz至40kHz的频率和0.8W至2W的输出功率。
可以通过根据所述加工用带的透射率调节所述波长为532nm的激光束的频率、输出功率和移动速度，控制所述晶片的打标质量。
所述波长为532nm的激光束可具有20kHz至40kHz的频率和0.8W至1.5W的输出功率，且所述激光束的移动速度可以为300mm/s以上。此外，所述波长为532nm的激光束可具有8kHz至20kHz的频率和1W至2W的输出功率，且所述激光束的移动速度可以为200mm/s至300mm/s。
例如，所述加工用带可以包括聚氯乙烯(PVC)、聚烯烃(PO)或聚乙烯(PET)。所述加工用带可以为透明色、蓝色或灰色。

Claims (5)

1.一种晶片打标方法，所述晶片打标方法利用激光对附着有加工用带的晶片进行打标，所述晶片打标方法包括：
使波长为532nm的激光束透过被附着在所述晶片的一面上的所述加工用带的步骤；以及
使所述波长为532nm的激光束以预定速度移动，以在所述晶片的一面上执行打标操作的步骤，
其中，所述波长为532nm的激光束具有8kHz至40kHz的频率和0.8W至2W的输出功率，
其中，通过根据所述加工用带的透射率调节所述波长为532nm的激光束的频率、输出功率和移动速度，控制所述晶片的打标质量。
2.根据权利要求1所述的晶片打标方法，其中，所述波长为532nm的激光束具有20kHz至40kHz的频率和0.8W至1.5W的输出功率，所述激光束的移动速度为300mm/s以上。
3.根据权利要求1所述的晶片打标方法，其中，所述波长为532nm的激光束具有8kHz至20kHz的频率和1W至2W的输出功率，所述激光束的移动速度为200mm/s至300mm/s。
4.根据权利要求1所述的晶片打标方法，其中，所述加工用带包括聚氯乙烯(PVC)、聚烯烃(PO)或聚乙烯(PET)。
5.根据权利要求1所述的晶片打标方法，其中，所述加工用带为透明色、蓝色或灰色。
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